200407999 (1) 玖、發明說明 【發明所屬之技術領域】 本發明大致上關於基底製造技術，特別關於以電磁輻 射放射原地監視基底溫度之方法及裝置。 【先前技術】 在例如半導體晶圓或用於平面顯示器製造的玻璃面板 等基底的處理中，通常採用電漿。舉例而言，基底處理 鲁 (化學汽相沈積、電漿增強化學汽相沈積、物理汽相沈 積、等等）的一部份是基底會被分成多個晶片、或長方形 區，每一晶片會變成積體電路。接著，以一系列步驟處理 基底，其中，選擇性地移除（蝕刻）材料及依序沈積以於其 上形成電元件。 在舉例說明的電漿處理中，在蝕刻之前，將基底塗以 固化的乳膠薄膜（亦即，例如光阻掩罩）。然後，選擇性 地移除固化的乳膠區域，使得部份下層曝露。然後將基底 φ 置於基底支撐結構上的電漿處理室中，基底支撐結構包括 稱爲夾具之單極或雙極電極。適當的蝕刻氣體源（舉例而 言，C4F8、C4F6、CHF3、CH2F3、CF4、CH3F、C2F4、 N2、02、Ar、Xe、He、H2、NH3、SF6、BF3、Cl2 等 等）。會流入室內且被撞擊而形成電漿以蝕刻基底的曝露 區。 在可以被調整以使電漿處理最佳化的製程變數組中有 氣體成份、氣相、氣體流速、氣壓、RF功率密度、電 (2) 200407999 壓、磁場強度、及晶圓溫度。雖然理論上對每一處理步驟 使每一變數最佳化是有利的，但是，實際上難以達成。 舉例而言，由於基底溫度會因改變晶圓表面上例如聚 氟碳等聚合膜的沈積速率而影響電漿選擇性，所以，基底 溫度是重要的。小心監視可以使變化最小，對其它參數允 許更寬的製程窗，並改進製程控制。但是，實際上，難以 直接決定溫度而不會影響電漿處理。200407999 (1) 发明. Description of the invention [Technical field to which the invention belongs] The present invention relates generally to substrate manufacturing technology, and in particular, to a method and apparatus for monitoring substrate temperature in situ by electromagnetic radiation. [Prior Art] In the processing of a substrate such as a semiconductor wafer or a glass panel used for flat display manufacturing, a plasma is generally used. For example, part of the substrate processing (chemical vapor deposition, plasma enhanced chemical vapor deposition, physical vapor deposition, etc.) is that the substrate will be divided into multiple wafers, or rectangular regions, each wafer will It becomes an integrated circuit. Next, the substrate is processed in a series of steps, in which material is selectively removed (etched) and sequentially deposited to form an electrical component thereon. In the illustrated plasma treatment, the substrate is coated with a cured latex film (i.e., for example, a photoresist mask) prior to etching. Then, the cured latex area is selectively removed, leaving a portion of the underlying layer exposed. The substrate φ is then placed in a plasma processing chamber on a substrate support structure that includes a unipolar or bipolar electrode called a clamp. Appropriate etching gas source (for example, C4F8, C4F6, CHF3, CH2F3, CF4, CH3F, C2F4, N2, 02, Ar, Xe, He, H2, NH3, SF6, BF3, Cl2, etc.). It will flow into the room and be impacted to form a plasma to etch the exposed area of the substrate. Among the process variables that can be adjusted to optimize plasma processing are gas composition, gas phase, gas flow rate, air pressure, RF power density, electrical (2) 200407999 pressure, magnetic field strength, and wafer temperature. Although it is theoretically advantageous to optimize each variable for each processing step, it is actually difficult to achieve. For example, substrate temperature is important because substrate temperature can affect plasma selectivity by changing the deposition rate of polymer films such as polyfluorocarbons on the wafer surface. Careful monitoring can minimize changes, allow wider process windows for other parameters, and improve process control. However, in practice, it is difficult to directly determine the temperature without affecting the plasma treatment.
另一方面，舉例而言，有一技術係以溫度探針量測基 底溫度。現在參考圖1，其顯示電漿處理系統之簡化的剖 面視圖，其中，使用溫度探針以決定晶圓溫度。一般而 言，使適當的蝕刻氣體源組流入室1 0 0中並使其被撞擊以 形成電漿1 0 2，以便蝕刻例如半導體晶圓或玻璃面板等基On the other hand, for example, there is a technique for measuring the temperature of a substrate with a temperature probe. Reference is now made to Fig. 1, which shows a simplified cross-sectional view of a plasma processing system in which a temperature probe is used to determine wafer temperature. Generally, an appropriate source of etching gas is caused to flow into the chamber 100 and be struck to form a plasma 102 to etch a substrate such as a semiconductor wafer or a glass panel.
底104的曝露區。基底104通常設於夾具106上。由電漿 1 〇2產生的電磁輻射與電漿本身轉換的動能相結合造成基 底104吸收熱能。爲了決定基底溫度，探針1〇8會從基底 1〇4下方延伸至接觸基底。但是，探針1〇8也會使晶圓移 離夾具，因而損毀昂貴的晶圓。 另一技術係以習知的高溫計，量測來自基底的紅外線 (IR)幅射。一般而言，經過加熱的材料會發射RF區的電 磁輻射。此區通常會比較8至M从m的波長範圍，或是 4〇〇至4〇00 cm】的頻率範圍，其中⑽·1係波數（w波長） 並寺於頻率。量測到的IR輻射可以接著藉由使用蒲朗克 的黑體輻射之輻射定律以計算基底溫度。 現在參考圖]B ’其顯示電漿處理系統的簡化的剖面 (3) (3)200407999 視圖。如圖1 A所示，將適當的蝕刻氣體源流入室！ 00中 並使其受撞擊以形成電漿]0 2，而蝕刻基底1 〇 4的曝露 區。基底！ Ό 4 一般位於夾具1 〇 6上。電漿1 0 2也可以產生 電磁輻射光譜，有些通常是IR。此輻射（伴隨電漿本身 轉換的動能）會造成基底1 〇4吸收熱能。基底1 04接著也 會產生對應於其溫度之IR輻射。但是，由於基底1 04的 IR輻射通常實質上小於電漿的溫度，所以，高溫計可能 無法分辨此二者。因此，計算的溫度會似近背景電漿本身 的溫度而非基底的溫度。 仍然有其它技術使用干涉儀以量測導因於吸收的熱能 而造成的基底厚度變化。一般而言，干涉儀藉由感測二表 面之間反射的電磁波的相位差以量測物理位移。在電漿處 理系統中，電磁波會以可透射基底的頻率發射，且以一角 度定位於基底之下。第一部份電磁波接著於基底的底面上 反射，而其餘部份的電磁波會於基底的上表面上反射。 現在參考圖1 c，其顯示電漿處理系統的簡化的剖面 視圖’其中，干涉儀用以決定晶圓溫度。如同圖1A所示 般’將適當的蝕刻氣體源組流入室1 0 0中，並使其受撞擊 以形成電漿1 02，藉以蝕刻例如半導體晶圓或玻璃面板等 基底104的曝露區。基底103通常設於夾具106上。電榮 1 0 2產生電磁輻射，有些是IR。此輻射（伴隨電發本身轉 換的動態）使得基底1 04吸收熱能及以量1 1 8膨脹。例如 雷射等電磁波發射器108會發射頻率能透射基底1〇4的電 磁波1 1 2。接著，電磁波的一部份1 ] 4會在基底的底面上 (4) 200407999 之點I 2 4反射，而電磁波的其餘部份1 ] 6會在基底的上 面上的點]2 2反射。由於相同的電磁波Π 2會在二點1 及124反射，所以，所造成的光束1 14及1 1 6會相位 同’但是其它相同。干涉儀1 3 0接著量測相位移及決定 底厚度 Π 8。藉由連續量測，可以決定基底厚度的改變 但是’基底厚度的改變僅可以用以決定溫度的對應變化 而非特定溫度。此外，由於發射器也設於電漿處理系 中’所以，其會被電漿1 02損傷，也可以產生影響產能 污染。 由於這些困難，通常會從電漿處理系統的散熱率推 基底溫度。一般而言，電漿一旦被點燃，某些型式的冷 系統會耦合至夾具以取得熱平衡。亦即，雖然基底溫度 常穩定於一範圍內，但是，通常不知道其準確値。舉例 言’在產生用於製造特定基底之電漿處理步驟組時，會 立對應的製程參數組、或配方。由於不會直接量測基底 度’所以，難以使配方最佳化。冷卻系統本身通常包括 卻器，其會經由夾具中的孔穴抽送冷媒，並在夾具與晶 之間抽送氦氣。爲了移除產生的熱，氦氣也允許冷卻系 快速地校正散熱。亦即，接著增加氦氣壓力也會增加熱 移率。 現在參考圖1 D，其顯示點燃之後基底之溫度相對 時間的簡化圖。起初，基底處在周環境溫度4 0 6。當電 被點燃時，在穩定週期期間4 〇 8，基底會吸收熱能。在 段時間後，基底溫度穩定在4 1 0。由於穩定週期4 0 8的 表 22 不 基 〇 統 之 斷 卻 通 而 建 溫 冷 圓 統 轉 於 漿 持 (5) (5)200407999 續時間可以是整個電漿處理步驟的實質部份，所以降低穩 定週期4 0 8會直接增進產能。假使基底溫度可以在電漿處 理系統中被直接量測，則冷卻系統可以被最佳化以使穩定 週期4 0 8最小。 此外，取決於電漿處理活動力、其持續時間、或其相 對於其它步驟的次序，會產生及接著散失不同的熱量。由 於如同先前所述般，基底溫度會直接影響電漿處理，所 以，首先量測及接著調整基底溫度將會允許電漿處理步驟 φ 被較佳地最佳化。 此外，電漿處理室本身的實體結構可以改變。舉例而 言，可以在無基底時以電漿撞擊，以將污染物從電漿處理 系統淸除。但是，夾具不再由基底屏蔽，且接著被蝕刻。 當淸洗製程重覆時，基底的表面粗糙度會增加，改變其熱 轉移效率。最後，冷卻系統無法適當地補償，且配方的參 數會無效。由於決定何時達到此點通常是不實際的，所 以，通常在一定的操作時數之後，更換夾具，而此一定的 φ 操作時數通常僅爲其使用壽命的一部份。由於並非需要地 更換昂貴的夾具，所以，這會增加生產成本，且由於電漿 處理系統必須離線數小時以更換夾具，所以，會降低產 能。 再者，由於在不同時間安裝相同的製造設備，所以， 可能需要調整配方參數，或是使用程度不同，所以，其維 修週期與其它設備的維修週期無法配合。當移動製程至更 新的電漿處理系統時，或者，當製程轉換至處理較大的基 (6)200407999 底尺寸（舉例而 時，配方參數可 數（舉例而言， 晶圓溫度是被推 由嘗試錯誤而被 慮及上述， 置。 【發明內容】 本發明在一 系統之方法。方 底係配置成吸收 組電磁頻率轉換 方法包含將基底 結構包含夾具； 漿反應器；及撞 漿包括第一組電 以產生第二組電 將量値轉換成溫 在另一實施 統中的裝置。裝 置成吸收包括第 磁頻率轉換成熱 也包含基底支撐 言，2 0 0 m m至 3 0 0 m m )之電紫處理系統 能需要調整。理想上，維持相同的配方參 化學作用、f功率、及溫度）。但是，由於 論且並未被量測，所以，製程可能需要經 實質地調整，以取得類似的生產曲線。 需要改進的原地監視基底溫度之方法及裝 實施例中係關於決定基底溫度的電漿處理 法包含提供包括材料組之基底，其中，基 包括第一組電磁頻率之電磁輻射以將第一 成熱振動組，及傳送第二組電磁頻率。此 設置於基底支撐結構上，其中，基底支撐 使蝕刻氣體混合物流入電漿處理系統的電 擊蝕刻氣體混合物以產生電漿，其中，電 磁頻率。方法又包含以電漿處理基底，藉 磁頻率；計算第二組電磁頻率的量値；及 度値。 例中，本發明係關於用於決定電漿處理系 置包含包括材料組的基底，其中，基底配 一組電磁頻率的電磁輻射，以將第一組電 振盪組，以及發送第二組電磁頻率。裝置 結構，其中，基底支撐結構包含夾具，且Exposed area of the bottom 104. The substrate 104 is generally disposed on a jig 106. The combination of the electromagnetic radiation generated by the plasma 100 and the kinetic energy converted by the plasma itself causes the substrate 104 to absorb thermal energy. To determine the substrate temperature, the probe 108 extends from below the substrate 104 to contact the substrate. However, the probe 108 also moves the wafer away from the fixture, thereby damaging the expensive wafer. Another technique uses conventional pyrometers to measure infrared (IR) radiation from a substrate. Generally speaking, heated materials emit electromagnetic radiation in the RF region. This region usually compares the wavelength range from 8 to M from m, or the frequency range from 400 to 4,000 cm], where the ⑽ · 1 series wave number (w wavelength) is not equal to the frequency. The measured IR radiation can then be used to calculate the substrate temperature using the radiation law of Planck's blackbody radiation. Reference is now made to Figure B 'which shows a simplified cross-sectional view of a plasma processing system (3) (3) 200407999 view. As shown in Figure 1 A, a suitable source of etching gas is flowed into the chamber! And exposed to a plasma to form a plasma], while etching the exposed area of the substrate 104. Base! Ό 4 is generally located on the fixture 106. Plasma 1 0 2 can also generate electromagnetic radiation spectrum, some are usually IR. This radiation (the kinetic energy that accompanies the plasma itself) causes the substrate 104 to absorb thermal energy. The substrate 104 will then also generate IR radiation corresponding to its temperature. However, since the IR radiation of the substrate 104 is generally substantially less than the temperature of the plasma, the pyrometer may not be able to distinguish the two. Therefore, the calculated temperature will look like the temperature of the near-plasma itself rather than the temperature of the substrate. There are still other technologies that use interferometers to measure changes in substrate thickness due to absorbed thermal energy. Generally speaking, the interferometer measures the physical displacement by sensing the phase difference of the electromagnetic waves reflected between the two surfaces. In a plasma processing system, electromagnetic waves are emitted at a frequency that is transmissive to the substrate and are positioned below the substrate at an angle. The first part of the electromagnetic wave is then reflected on the bottom surface of the substrate, while the remaining part of the electromagnetic wave is reflected on the upper surface of the substrate. Reference is now made to Figure 1c, which shows a simplified cross-sectional view of a plasma processing system ', where an interferometer is used to determine the wafer temperature. As shown in Fig. 1A ', an appropriate source group of etching gas is flowed into the chamber 100 and subjected to impact to form a plasma 102, thereby etching the exposed area of the substrate 104 such as a semiconductor wafer or a glass panel. The substrate 103 is usually disposed on a jig 106. Electric Rong 1 0 2 produces electromagnetic radiation, some are IR. This radiation (with the dynamics of the conversion of the electric generator itself) causes the substrate 104 to absorb thermal energy and expand by an amount 1 1 8. An electromagnetic wave transmitter 108, such as a laser, emits electromagnetic waves 1 12 having a frequency that can transmit through the substrate 104. Then, a part 1] 4 of the electromagnetic wave will be reflected on the bottom surface of the substrate (4) 200407999 point I 2 4 while the remaining part 1] 6 of the electromagnetic wave will be reflected on the top surface of the substrate] 2 2. Since the same electromagnetic wave Π 2 will be reflected at two points 1 and 124, the resulting beams 1 14 and 1 1 6 will have the same phase, but the same. The interferometer 1 3 0 then measures the phase displacement and determines the base thickness Π 8. Through continuous measurement, the change in substrate thickness can be determined, but the change in substrate thickness can only be used to determine the corresponding change in temperature, not a specific temperature. In addition, because the transmitter is also installed in the plasma processing system, it will be damaged by the plasma 102, and it may also cause pollution that affects production capacity. Because of these difficulties, the substrate temperature is usually derived from the heat dissipation rate of the plasma processing system. Generally, once the plasma is ignited, some types of cooling systems are coupled to the fixture to achieve thermal equilibrium. That is, although the substrate temperature is often stable within a range, its accuracy is usually unknown. For example, 'When generating a set of plasma processing steps for manufacturing a specific substrate, a corresponding set of process parameters, or recipes, will be established. Since the degree of base is not directly measured, it is difficult to optimize the formulation. The cooling system itself usually includes a cooler that pumps refrigerant through the holes in the fixture and helium gas between the fixture and the crystal. To remove the heat generated, helium also allows the cooling system to quickly correct the heat dissipation. That is, subsequent increase in helium pressure will also increase heat transfer rate. Reference is now made to Fig. 1D, which shows a simplified graph of substrate temperature versus time after ignition. Initially, the substrate was at ambient ambient temperature of 4.06. When electricity is ignited, the substrate will absorb thermal energy during the stabilization period of 408. After some time, the substrate temperature stabilized at 4 1 0. Since Table 22 of the stable period 4 0 8 is not based on the system's interruption, it has been established that the warm and cold circle system is transferred to the plasma holding (5) (5) 200407999. The duration can be a substantial part of the entire plasma processing step, so the The stabilization period of 408 will directly increase production capacity. If the substrate temperature can be directly measured in the plasma processing system, the cooling system can be optimized to minimize the stabilization period 4 0 8. In addition, depending on the plasma treatment activity, its duration, or its order relative to other steps, different amounts of heat are generated and subsequently lost. Since the substrate temperature directly affects the plasma treatment, as described previously, measuring and then adjusting the substrate temperature will allow the plasma treatment step φ to be better optimized. In addition, the physical structure of the plasma processing chamber itself can be changed. For example, a plasma strike can be used to remove contaminants from a plasma treatment system when there is no substrate. However, the fixture is no longer shielded by the substrate and is then etched. When the rinsing process is repeated, the surface roughness of the substrate increases, which changes its heat transfer efficiency. Finally, the cooling system cannot compensate properly and the parameters of the formula become invalid. Because deciding when to reach this point is usually impractical, the fixture is usually replaced after a certain number of operating hours, and this certain φ operating hour is usually only a part of its service life. This can increase production costs because expensive fixtures are not required to be replaced, and because the plasma processing system must be offline for several hours to change fixtures, productivity is reduced. Furthermore, because the same manufacturing equipment is installed at different times, the formulation parameters may need to be adjusted, or the degree of use may be different, so its maintenance cycle cannot be matched with the maintenance cycle of other equipment. When moving the process to a newer plasma processing system, or when the process is switched to process a larger base (6) 200407999 base size (for example, the recipe parameters can be counted (for example, the wafer temperature is [Error Summary] The above is taken into account. [Summary of the Invention] The present invention provides a system method. The square base is configured to absorb the electromagnetic frequency conversion method of the group including a base structure including a jig; a slurry reactor; Group of electricity to generate a second group of electricity to convert the amount of heat into a device in another embodiment. The device to absorb includes the first magnetic frequency into heat and also includes the substrate support (200 mm to 300 mm) The electric violet treatment system can need to be adjusted. Ideally, the same formulation parameters (chemical effects, f power, and temperature) are maintained. However, because it is not measured, the process may need to be adjusted substantially to achieve a similar production curve. The method and apparatus for in-situ monitoring of substrate temperature in need of improved plasma processing methods for determining substrate temperature include providing a substrate including a material group, wherein the substrate includes a first set of electromagnetic frequencies of electromagnetic radiation to convert the first Thermal vibration group, and transmitting a second group of electromagnetic frequencies. This is disposed on a substrate supporting structure, wherein the substrate supports an electric shock etching gas mixture that causes the etching gas mixture to flow into the plasma processing system to generate a plasma, wherein the electromagnetic frequency. The method further includes treating the substrate with a plasma, borrowing the magnetic frequency; calculating the magnitude of the second set of electromagnetic frequencies; and degrees 値. In an example, the present invention relates to a substrate for determining a plasma processing system including a material group, wherein the substrate is provided with electromagnetic radiation of a group of electromagnetic frequencies to oscillate a first group of electromagnetic frequencies and send a second group of electromagnetic frequencies. . Device structure, wherein the base support structure includes a clamp, and
(7) (7)200407999 基底設於基底支撐結構上；輸送機構，將蝕刻氣體混合物 流入電漿處理系統的電漿反應器；及撞擊機構，撞擊蝕刻 氣體混合物以產生電漿，其中，電漿包括第一組電磁頻 率。裝置又包含處理機構，以電漿處理基底，藉以產生第 二組電磁頻率；計算機構，計算第二組電磁頻率的量値； 及轉換機構，將該量値轉換成溫度値。 在配合附圖之下述詳細說明中，將更詳細地說明本發 明的這些及其它特點。 φ 【實施方式】 將參考如圖式中所示之本發明的數個較佳實施例以說 明本發明。在下述說明中，揭示眾多具體細節以便完整地 瞭解本發明。但是，習於此技藝者將瞭解本發明在無這些 特定細節的一些或全部時，仍可實施。在其它情形下，尙 未詳細說明習知的製程步驟及/或結構以免模糊本發明。 不希望受限於理論，本發明人於此深信電漿處理系統 φ 中，聲子可以用於原地監視基底溫度。一般而言，聲子是 基底中的熱能振盪，其接著會產生電磁波。基底內分離的 接合材料，特別是存在於結晶結構內的特別材料，通常會 發射電磁輻射，該電磁輻射具有對該材料而言是獨特的頻 率，且具有與基底中吸收的熱能總量有關連的量値。以非 顯而易知的方式，藉由量測頻率爲基底材料的特徵但是通 常會在電漿處理系統中的任意處發現之輻射量値，可以以 實質上準確的方式計算基底的溫度。在一實施例中，使用 -10 - (8) (8)200407999 黑體輻射之蒲朗克輻射定律，但以基底的特定輻射率校 正，以完成計算。 可以使用某些頻率，較佳地在IR及遠Ϊ R區中。所選 取的頻率應實質上對應於基底材料具有強的吸收係數之光 譜區。可以使用大量的光譜區。大部份較受喜好的聲子是 在6 □ m與5 0 □ m的範圍之中。在一實施例中，對S i基 底而言，可由以1 6.4 // m之S i - S i振盪而產生可量測的輻 射。在另一實施例中，由9 · 1 μηι之S卜Ο - S i振盪產生受監 φ 視的聲子，其中間位氧參與原子運動。利用豐富的 Si-Si、Si-0、及 Si-C(替代碳）振動光譜，可以使用其它光 譜區。 現在參考圖.2 A，其係根據本發明的一實施例之製程 的簡化圖，其中，顯示聲子。在電漿處理系統中，電漿 2 0 1會被撞擊，產生橫越X光區至微波區之光譜。此輻射 的大部份2 02 a會通過基底而無影響。這是透射光。實施 例是X光、大部份的紅外線光譜。此輻射的第二部份 φ 202b會由基底206部份地吸收並部份地透射。實施例是 近紅外線中及適度紅外線中的光，基底對其頻率具有低的 吸收或消光係數。被吸收的部份實質上會被轉換成熱能。 其餘部份實質上整體被吸收並轉換成熱能。接著，聚集的 熱能會在基底的晶格結構內接合的材料中造成聲子2 1 0， 其接著造成輻射2 1 4以特定可量測的頻率產生。 現在參考圖2 B ’其顯示根據本發明的一實施例之製 程的簡化圖’其中，基底溫度被量測。如圖2A所示，電 -11 - (9) (9)200407999 漿2 0 1在電漿處理系中統被撞擊，產生電磁輻射2 0 2。被 吸收的電磁輻射之一部份實質上會被轉換成熱能。此熱能 接著會在基底的晶格結構內接合的材料中產生聲子2 1 0， 其接著會造成輻射2 1 4產生並接著由偵測器2 1 2量測。輻 射2 1 4與發射基底處於熱平衡。偵測器2〗2由i)能夠根 據發射的電磁輻射的頻率（或波長）以區別發射的電磁輻 射之裝置，及2)能夠量測在裝置1)所選取之頻率（波長）的 電磁輻射強度之裝置。在一實施例中，偵測器2 1 2可以具 有例如單色器之光學色散元件（舉例而言，多層介電干射 濾光器、稜鏡、光柵、Fabry-Perot干涉儀），其係被最 佳化以傳送對應於選取的材料之電磁頻譜帶的輻射強度。 在另一實施例中，使用適當頻帶的濾波器以選取有用的輻 射。在偵測器中可以使用任何能夠量測單色器所選取的輻 射強度之感光裝置。實施例是熱偵測器（熱電堆）、感光 的及光電伏打偵測器。 現在參考圖2C，其顯示根據本發明的一實施例之圖 2 B更詳細的圖形。如圖2 A所示般，在電發處理系統2 〇 〇 中電漿2 0 1會被撞擊，產生電磁輻射2 〇 2。被吸收之電磁 輻射的部份實質上會被轉換成熱能，接著會在基底2 0 6內 造成產生聲子。以偵測器2 2 0量測頻率對應於選取的材料 之輻射 214(亦即，Ι6·4μπι 之 Si-Si，9·1μηι 之 Si-0-Si、 等等），可以計算基底206的溫度。 電漿處理系統200又包含某種型式的冷卻系統，其奉禹 合至夾具以取得熱平衡。此冷卻系統通常包括冷卻器，其 (10) (10)200407999 會將冷媒抽送經過夾具內的孔穴，以及在夾具與晶圓之間 抽送氦氣。除了移除所產生的熱之外，氦氣也允許冷卻系 統快速地效正散熱。亦即，增加的氦氣壓力接著也會增加 熱轉換率。 與習知技藝相反，藉由調整冷卻器2 2 0的溫度設定及 氦氣2 2 0的壓力，可以以實質穩定的方式維持基底2 0 6的 溫度。特別地，由於在後續的電漿淸潔期間，夾具的熱轉 換效率會降低，所以，氦2；2 0的壓力會增加以補償，藉以 實質地維持基底溫度。這可以允許夾具具有實質上較長時 間的使用，減少夾具更換成本。此外，由於電漿處理系統 2 0 0在必須的維修之前可以操作較久，所以，可以維持或 增進產能。 此外，與對寬的基底溫度範圍次佳化相反，特定的電 漿處理步驟可以最佳化以用於窄的基底溫度範圍。此外， 由於來自先前步騾之餘留的製程熱量可以快速地衰減，所 以，製程步騾可以更容易地互換。 現在參考圖3 A -E ’其顯示根據本發明之一實施例之 E X e 1 a η Η P T電漿處理系統中的碁底聲子量測。雖然在本 實施例中，顯示Exelan Ηρτ電漿處理系統，但是，也可 以使用其它電漿處理系統。在下述製程條件下執行蝕刻處 理： 壓力：5 〇 M t 功率：18〇〇W(2MHz)/ 1 2 00W(2 7MHz) 電漿成份：A 】· ： 2 7 0 s c c m ; c 4 F 8 : 2 5 s c c m ; 〇 2 : ] 〇 (11) (11)200407999 see m 溫度：2 0 °C 持續時間：3 0 0 s e c 現在參考圖3 A，其顯示根據本發明的一實施例之電 漿處理系統內訊號強度相對於時間之簡化圖。在執行此測 試期間，無基底存在。一般而言，當電漿被撞擊時，室壁 會隨著時間3 1 6吸收熱能，產生聲子。在本實施例中，對 1 6.4 // m的 S i - S i量測造成的電磁輻射。在另一實施例 φ 中，由 S i - Ο - S i所產生的輻射也會產生實質上類似於在 9 . 1 μηι的圖。此圖形顯示隨著電漿室壁因電漿作用而變得 愈來愈熱，電磁輻射之強度會增加。當電漿在 3 20關閉 時，由於室壁關始冷卻，所以，對應的訊號強度也會降 低。此圖形顯示室壁發射的電磁輻射假使未被正確地處 理，將會干擾基底溫度量測。 現在參考圖 3 Β，顯示根據本發明的一實施例，電漿 處理系統內波數相對於吸收率之簡化圖。曲線 3 24顯示 φ 2 (TC.時的基底之基底吸收率。曲線 3 2 6顯示 7 0 °C時的基 底之基底吸收率。曲線3 2 8顯示 9 (TC時的基底之基底吸 收率。一般而言，基底溫度愈高，對應的吸收率變得愈 負。在電漿處理系統中產生的IR輻射之頻譜中，二吸收 峰値變得明顯，第一峰値 3 3 0在 1 6.4 // m，由 S i · S i產 生，第二峰値3 3 2在9.1 " m，由S i - 0 - S i產生。觀察到之 最大頻譜變化是在1 6.4 /i m及9 . 1 μηι之峰値。在這些波長 處，訊號強度對於基底溫度最靈敏。曲線3 2 4顯示在1 6 . -14 - (12) (12)200407999 β m及9 . 1 μηι爲正吸收，意指基底在這些波長處吸收的電 磁輻射比它發射的電磁輻射更多。曲線 3 2 6及 3 2 8在 16·4μηι及9.1μηι顯示負吸收，表示基底在這些波長發1射 的電磁輻射多於其吸收的電磁輻射。由基底發射的輻射及 由偵測器量測的輻射係在與基底熱平衡且與電漿發射及處 理室壁發射的輻射無關。 現在參考圖3 C，其係顯示根據本發明的一實施例之 電漿處理系統內，在二溫度範圍內，波長相對於吸收率之 φ 簡化圖。在20 °C的電漿處理系統中產生的IR輻射之頻譜 中’基底溫度係基底發射的輻射量類似於吸收量，因此， 無明顯的峰値。但是，在 9 0 °C的基底溫度，二吸收峰値 變得明顯，第一峰値在1 6.4 // m，由S i - S i產生，第二峰 値在9 . 1 // m，由S i - Ο - S i產生。 現在參考圖3 D，其顯示根據本發明的一實施例之電 漿處理系統內的訊號強度相對於溫度之簡化圖。曲線3 4 6 量測訊號強度3U相對於溫度3 0 7，而曲線3 4 8量測訊號 鲁 強度相對於溫度3 0 7。如圖3 B所示，基底溫度愈高，則 對應的訊號強度愈高。 現在參考圖3 E，其顯示根據本發明的一實施例之電 漿處理系統內二量測的波長之吸收率相對於溫度的簡化 圖。第一曲線3 3 0係S i - S i於1 6 · 4 μηι產生的，第二曲線 332係Si-0-Si於9·1 μηι產生的。隨著溫度307增加，對 應的吸收率3 05實質上以線性方式減少。 雖然以數個較佳實施例說明本發明，但是，可以有其 -15- (13) (13)200407999 它落在本發明的範圍內之改變、變更及均等性。舉例而 言，雖然配合E X e 1 a η Η P T電發處理系統，說明本發明， 但是，可以使用其它電漿處理_系統。也應注意，有很多不 同方式以實施本發明的方法。 本發明的優點包含在電漿處理系統中原地量測基底的 溫度。其它優點包含最佳化例如夾具等電漿處理結構的更 換，增加電漿處理製程本身的產能，並便於決定及將配方 從第一電漿處理系統轉換至第二電漿處理系統。已揭示舉 例說明的實施例及最佳模式，在後附的申請專利範圍所界 定的發明之目的及精神之內，可對揭示的實施例作修改及 變化。 【圖式簡單說明】 以附圖中的實施例但非限定之方式，說明本發明，其 中，類似代號代表類似的元件，及其中： 圖1 Α係顯示電漿處理系統的簡化剖面視圖，其中使 用溫度探針以決定晶圓溫度； 圖1 B係顯示電漿處理系統的簡化剖面視圖，其中使 用高溫針以決定晶圓溫度； 圖1 c係顯示電紫處理系統的簡化剖面視圖，其中使 用干涉儀以決定晶圓溫度； 圖1 D係顯示電漿點燃之後基底的溫度相對於時間之 簡化圖； 圖2 A係顯示根據本發明的一竇施例之製程的簡化 ► 16 - (14) (14)200407999 圖，其中，顯示聲子； 圖 2 B係顯示根據本發明的一實施例之製程的簡化 圖，其中，量測基底溫度； ·’ 圖2 C係顯示根據本發明的一實施例之圖2 B的更詳 細之圖形； 圖3 A - 3 E係顯示根據本發明的一實施例之電漿處理系 統中的基底之聲子量測。 主要元件對照表 1 00 室 1 0 2 電漿 1 03 基底 1 04 基底 1 0 6 夾具 1 0 8 探針 1 3 0 干涉儀 0 2 0 0 電漿處理系統 2 0 1 電漿 2 06 基底 2 1 2偵測器 -17 -(7) (7) 200407999 The substrate is provided on a substrate supporting structure; a conveying mechanism that flows an etching gas mixture into a plasma reactor of a plasma processing system; and an impact mechanism that strikes the etching gas mixture to generate a plasma, wherein the plasma Includes the first set of electromagnetic frequencies. The device further includes a processing mechanism for processing the substrate with a plasma to generate a second group of electromagnetic frequencies; a calculation mechanism for calculating a quantity of the second group of electromagnetic frequencies; and a conversion mechanism for converting the quantity to a temperature. These and other features of the invention will be explained in more detail in the following detailed description in conjunction with the drawings. [Embodiment] The present invention will be explained with reference to several preferred embodiments of the present invention as shown in the drawings. In the following description, numerous specific details are disclosed to provide a thorough understanding of the present invention. However, those skilled in the art will understand that the invention may be practiced without some or all of these specific details. In other cases, the conventional process steps and / or structures have not been described in detail so as not to obscure the present invention. Without wishing to be bound by theory, the inventors are convinced that in the plasma processing system φ, phonons can be used to monitor the substrate temperature in situ. Generally speaking, phonons are thermal energy oscillations in the substrate, which in turn generate electromagnetic waves. The bonding material separated in the substrate, especially the special material existing in the crystalline structure, usually emits electromagnetic radiation having a frequency unique to the material and having a relationship with the total amount of thermal energy absorbed in the substrate量 量 's amount. In a non-obvious and easy-to-understand manner, by measuring the frequency of radiation as a characteristic of the substrate material but usually found anywhere in the plasma processing system, the temperature of the substrate can be calculated in a substantially accurate manner. In one embodiment, the -10-(8) (8) 200407999 Black Plane radiation Law of Planck radiation is used, but corrected for the specific emissivity of the substrate to complete the calculation. Certain frequencies can be used, preferably in the IR and far R regions. The frequency selected should substantially correspond to the spectral region of the substrate material with a strong absorption coefficient. A large number of spectral regions can be used. Most preferred phonons are in the range of 6 □ m and 50 □ m. In one embodiment, for the S i substrate, measurable radiation can be generated by oscillating at S i-S i at 16.4 // m. In another embodiment, the supervised φ-view phonon is generated by the SbO-Si oscillation of 9 · 1 μηι, in which meta-oxygen participates in atomic motion. With rich Si-Si, Si-0, and Si-C (alternative carbon) vibrational spectra, other spectral regions can be used. Reference is now made to Fig. 2A, which is a simplified diagram of a process according to an embodiment of the invention, in which phonons are shown. In the plasma processing system, the plasma 201 will be impacted to generate a spectrum across the X-ray region to the microwave region. Most of this radiation 2 02 a passes through the substrate without effect. This is transmitted light. Examples are X-rays, most of the infrared spectrum. The second part φ 202b of this radiation will be partially absorbed by the substrate 206 and partially transmitted. Examples are light in near-infrared and moderate infrared, and the substrate has a low absorption or extinction coefficient for its frequency. The absorbed part is essentially converted into thermal energy. The remainder is substantially absorbed in its entirety and converted into thermal energy. Then, the accumulated thermal energy causes phonons 2 1 0 in the bonded materials within the crystal structure of the substrate, which in turn causes radiation 2 1 4 to be generated at a specific measurable frequency. Reference is now made to Fig. 2B ', which shows a simplified diagram of a process according to an embodiment of the present invention', in which the substrate temperature is measured. As shown in FIG. 2A, electricity -11-(9) (9) 200407999 plasma 2 0 1 was hit in the plasma processing system, generating electromagnetic radiation 2 0 2. Part of the absorbed electromagnetic radiation is essentially converted into thermal energy. This thermal energy will then generate phonons 2 10 in the bonded material within the lattice structure of the substrate, which will then cause radiation 2 1 4 to be generated and then measured by the detector 2 1 2. Radiation 2 1 4 is in thermal equilibrium with the emitting substrate. Detector 2 2) i) a device capable of distinguishing emitted electromagnetic radiation according to the frequency (or wavelength) of the emitted electromagnetic radiation, and 2) capable of measuring electromagnetic radiation at the frequency (wavelength) selected by the device 1) Device of strength. In an embodiment, the detector 2 1 2 may have an optical dispersive element such as a monochromator (for example, a multilayer dielectric dry filter, chirp, grating, Fabry-Perot interferometer), which is Optimized to transmit the radiation intensity of the electromagnetic spectrum band corresponding to the selected material. In another embodiment, filters of appropriate frequency bands are used to select useful radiation. The detector can use any photosensitive device capable of measuring the radiation intensity selected by the monochromator. Examples are thermal detectors (thermopiles), photosensitive and photovoltaic detectors. Reference is now made to Fig. 2C, which shows a more detailed diagram of Fig. 2B according to an embodiment of the present invention. As shown in FIG. 2A, in the electric power generation processing system 2000, the plasma 201 is impacted, and electromagnetic radiation 202 is generated. The part of the absorbed electromagnetic radiation is essentially converted into thermal energy, which then causes phonons to be generated in the substrate 206. Using the detector 2 2 0 to measure the radiation corresponding to the selected material 214 (ie, Si-Si of 6.4 μm, Si-0-Si of 9.1 μm, etc.), the temperature of the substrate 206 can be calculated . The plasma processing system 200 also includes a cooling system of some type, which is coupled to the fixture to achieve thermal equilibrium. This cooling system usually includes a cooler, which (10) (10) 200407999 pumps the refrigerant through the holes in the fixture and helium between the fixture and the wafer. In addition to removing the heat generated, helium also allows the cooling system to quickly dissipate heat. That is, the increased helium pressure will then also increase the heat conversion rate. Contrary to the conventional art, by adjusting the temperature setting of the cooler 2 2 0 and the pressure of the helium 2 2 0, the temperature of the substrate 2 0 6 can be maintained in a substantially stable manner. In particular, since the thermal conversion efficiency of the fixture will decrease during the subsequent plasma cleaning, the pressure of helium 2; 20 will increase to compensate, thereby substantially maintaining the substrate temperature. This allows fixtures to be used for substantially longer periods, reducing fixture replacement costs. In addition, since the plasma processing system 2000 can be operated for a long time before necessary maintenance, the production capacity can be maintained or increased. Furthermore, as opposed to suboptimizing a wide substrate temperature range, specific plasma processing steps can be optimized for a narrow substrate temperature range. In addition, because the process heat from the previous steps can be quickly attenuated, the process steps can be more easily interchanged. Reference is now made to Figs. 3A-E 'which show the measurement of radon bottom phonons in an E X e 1 a η Η P T plasma processing system according to an embodiment of the present invention. Although the Exelan Ηρτ plasma processing system is shown in this embodiment, other plasma processing systems may be used. The etching process was performed under the following process conditions: Pressure: 500 MW Power: 180 MW (2 MHz) / 12 00 W (2 7 MHz) Plasma composition: A]: 270 sccm; c 4 F 8: 2 5 sccm; 〇2:] 〇 (11) (11) 200407999 see m Temperature: 20 ° C Duration: 3 0 0 sec Referring now to FIG. 3A, it shows a plasma treatment according to an embodiment of the present invention Simplified graph of signal strength versus time in the system. No substrate was present during this test. Generally speaking, when the plasma is struck, the chamber wall absorbs thermal energy over time 3 1 6 and generates phonons. In this embodiment, the electromagnetic radiation caused by S i-S i of 1 6.4 // m is measured. In another embodiment φ, the radiation generated by S i-0-S i also produces a graph substantially similar to that in 9.1 μηι. This graph shows that as the walls of the plasma chamber become hotter due to the action of the plasma, the intensity of electromagnetic radiation increases. When the plasma is turned off at 3 to 20, the corresponding signal strength will decrease because the wall of the chamber starts to cool down. This graphic shows that if the electromagnetic radiation emitted by the chamber wall is not processed properly, it will interfere with the substrate temperature measurement. Referring now to FIG. 3B, a simplified diagram of the wavenumber versus the absorption rate in a plasma processing system according to an embodiment of the present invention is shown. Curve 3 24 shows the basal absorption rate of the substrate at φ 2 (TC.) Curve 3 2 6 shows the basal absorption rate of the substrate at 70 ° C. Curve 3 2 8 shows 9 (TC basal absorption rate of the substrate. In general, the higher the substrate temperature, the more negative the corresponding absorption rate becomes. In the spectrum of IR radiation generated in the plasma processing system, the second absorption peak 値 becomes obvious, and the first peak 値 3 3 0 is at 1 6.4 // m, generated by S i · S i, the second peak 値 3 3 2 is at 9.1 " m, generated by S i-0-S i. The maximum spectral changes observed are at 16.4 / im and 9. 1 μηι peaks. At these wavelengths, the signal intensity is most sensitive to substrate temperature. The curve 3 2 4 shows at 16. -14-(12) (12) 200407999 β m and 9. 1 μηι are positive absorption, meaning It means that the substrate absorbs more electromagnetic radiation at these wavelengths than it emits. The curves 3 2 6 and 3 2 8 show negative absorption at 16.4 μηι and 9.1 μηι, indicating that the substrate emits more electromagnetic radiation at these wavelengths. The electromagnetic radiation absorbed by it. The radiation emitted by the substrate and the radiation measured by the detector are in thermal equilibrium with the substrate and The plasma emission and the radiation emitted by the processing chamber wall are independent. Now referring to FIG. 3C, it is a simplified diagram showing the φ of the wavelength versus the absorption rate in the two temperature ranges in a plasma processing system according to an embodiment of the present invention. In the spectrum of IR radiation generated in a plasma processing system at 20 ° C, the 'substrate temperature' refers to the amount of radiation emitted by the substrate similar to that of absorption, so there are no significant peaks. However, at a substrate temperature of 90 ° C, The double absorption peak 値 becomes obvious, the first peak 値 is at 16.4 // m, generated by S i-S i, and the second peak 値 is at 9. 1 // m, generated by S i-Ο-S i. Now Referring to FIG. 3D, a simplified diagram of signal strength versus temperature in a plasma processing system according to an embodiment of the present invention is shown. Curve 3 4 6 measures signal strength 3U versus temperature 3 0 7 and curve 3 4 8 The measured signal strength is relative to the temperature 3 0 7. As shown in FIG. 3B, the higher the substrate temperature, the higher the corresponding signal strength. Now referring to FIG. 3E, it shows the electric power according to an embodiment of the present invention. Simplification of Absorptivity vs. Temperature for Two Measured Wavelengths in a Pulp Processing System The first curve 3 3 0 is generated by S i-S i at 16 · 4 μηι, and the second curve 332 is generated by Si-0-Si at 9 · 1 μηι. As the temperature 307 increases, the corresponding absorption rate 3 05 is reduced substantially in a linear manner. Although the present invention has been described in terms of several preferred embodiments, there may be -15- (13) (13) 200407999 which are within the scope of the present invention. Sex. For example, although the present invention is described in conjunction with the E X e 1 a η Η P T electro-generation processing system, other plasma processing systems can be used. It should also be noted that there are many different ways to implement the method of the invention. Advantages of the present invention include measuring the temperature of a substrate in situ in a plasma processing system. Other advantages include optimizing the replacement of plasma processing structures such as fixtures, increasing the capacity of the plasma processing process itself, and facilitating the determination and conversion of recipes from the first plasma processing system to the second plasma processing system. The disclosed embodiments and the best mode have been modified and changed within the purpose and spirit of the invention defined by the scope of the attached patent application. [Brief description of the drawings] The present invention will be described by way of examples in the drawings, but not by way of limitation, in which similar symbols represent similar elements, and among them: Figure 1 A shows a simplified cross-sectional view of a plasma processing system, where The temperature probe is used to determine the wafer temperature; Figure 1B shows a simplified cross-sectional view of a plasma processing system, in which a high-temperature needle is used to determine the wafer temperature; Figure 1c shows a simplified cross-sectional view of an electrical violet processing system, in which Interferometer to determine wafer temperature; Figure 1 D shows a simplified diagram of substrate temperature versus time after plasma ignition; Figure 2 A shows a simplified process of a sinus embodiment according to the present invention ► 16-(14) (14) 200407999 diagram, in which phonons are shown; FIG. 2B is a simplified diagram showing a manufacturing process according to an embodiment of the present invention, in which the substrate temperature is measured; Example 2 is a more detailed graph of Figure 2B; Figures 3A-3E show phonon measurements of a substrate in a plasma processing system according to an embodiment of the present invention. Main components comparison table 1 00 Room 1 0 2 Plasma 1 03 Substrate 1 04 Substrate 1 0 6 Fixture 1 0 8 Probe 1 3 0 Interferometer 0 2 0 0 Plasma Processing System 2 0 1 Plasma 2 06 Substrate 2 1 2 Detector-17-