AU2003262685A8 - Methods and apparatus for in situ substrate temperature monitoring by electromagnetic radiation emission - Google Patents

Methods and apparatus for in situ substrate temperature monitoring by electromagnetic radiation emission

Info

Publication number
AU2003262685A8
AU2003262685A8 AU2003262685A AU2003262685A AU2003262685A8 AU 2003262685 A8 AU2003262685 A8 AU 2003262685A8 AU 2003262685 A AU2003262685 A AU 2003262685A AU 2003262685 A AU2003262685 A AU 2003262685A AU 2003262685 A8 AU2003262685 A8 AU 2003262685A8
Authority
AU
Australia
Prior art keywords
methods
electromagnetic radiation
substrate temperature
temperature monitoring
radiation emission
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003262685A
Other versions
AU2003262685A1 (en
Inventor
Enrico Magni
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of AU2003262685A8 publication Critical patent/AU2003262685A8/en
Publication of AU2003262685A1 publication Critical patent/AU2003262685A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/60—Radiation pyrometry, e.g. infrared or optical thermometry using determination of colour temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Radiation Pyrometers (AREA)
AU2003262685A 2002-08-13 2003-08-13 Methods and apparatus for in situ substrate temperature monitoring by electromagnetic radiation emission Abandoned AU2003262685A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US40297802P 2002-08-13 2002-08-13
US60/402,978 2002-08-13
PCT/US2003/025524 WO2004015157A2 (en) 2002-08-13 2003-08-13 Methods and apparatus for in situ substrate temperature monitoring by electromagnetic radiation emission

Publications (2)

Publication Number Publication Date
AU2003262685A8 true AU2003262685A8 (en) 2004-02-25
AU2003262685A1 AU2003262685A1 (en) 2004-02-25

Family

ID=31715916

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003262685A Abandoned AU2003262685A1 (en) 2002-08-13 2003-08-13 Methods and apparatus for in situ substrate temperature monitoring by electromagnetic radiation emission

Country Status (6)

Country Link
JP (1) JP4980568B2 (en)
KR (1) KR20050050079A (en)
CN (1) CN1675406B (en)
AU (1) AU2003262685A1 (en)
TW (1) TWI320951B (en)
WO (1) WO2004015157A2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7341673B2 (en) 2003-08-12 2008-03-11 Lam Research Corporation Methods and apparatus for in situ substrate temperature monitoring by electromagnetic radiation emission
JP2007134601A (en) * 2005-11-11 2007-05-31 Horiba Ltd Method for measuring temperature of silicon wafer, and radiation thermometer for measuring temperature
DE102006009460A1 (en) * 2006-03-01 2007-09-06 Infineon Technologies Ag Process device used in production of integrated circuits comprises process chamber, holder within chamber for holding substrate, radiation source, radiation detector and control and evaluation unit
US7651269B2 (en) * 2007-07-19 2010-01-26 Lam Research Corporation Temperature probes having a thermally isolated tip
CN102313599B (en) * 2010-06-29 2013-04-24 北京北方微电子基地设备工艺研究中心有限责任公司 Device and method for measuring temperature of coupling window, and plasma equipment
US10373794B2 (en) * 2015-10-29 2019-08-06 Lam Research Corporation Systems and methods for filtering radio frequencies from a signal of a thermocouple and controlling a temperature of an electrode in a plasma chamber
CN105841844B (en) * 2016-03-24 2018-07-24 中国科学院上海微系统与信息技术研究所 A kind of method that substrate surface actual temperature is demarcated in molecular beam epitaxy
CN109280899A (en) * 2018-11-27 2019-01-29 上海卫星装备研究所 The characterizing method of matrix temperature rise during a kind of vacuum coating

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4959244A (en) * 1989-03-27 1990-09-25 General Electric Company Temperature measurement and control for photohermal processes
JPH03250642A (en) * 1989-12-06 1991-11-08 Hitachi Ltd Infrared ray thermometer
JP3093239B2 (en) * 1990-05-22 2000-10-03 東京エレクトロン株式会社 Semiconductor wafer heat treatment apparatus and heat treatment method
JPH0493730A (en) * 1990-08-09 1992-03-26 Sharp Corp Temperature measuring apparatus
JPH0691144B2 (en) * 1990-09-21 1994-11-14 株式会社日立製作所 Radiation thermometer for measuring wafer temperature and method for measuring wafer temperature
US5564830A (en) * 1993-06-03 1996-10-15 Fraunhofer Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Method and arrangement for determining the layer-thickness and the substrate temperature during coating
US5549756A (en) * 1994-02-02 1996-08-27 Applied Materials, Inc. Optical pyrometer for a thin film deposition system
GB9411153D0 (en) * 1994-06-03 1994-07-27 Land Infrared Ltd Temperature monitoring
EP1124255A3 (en) * 1999-04-05 2001-10-17 Applied Materials, Inc. Etching process in the fabrication of electronic devices
US6328802B1 (en) * 1999-09-14 2001-12-11 Lsi Logic Corporation Method and apparatus for determining temperature of a semiconductor wafer during fabrication thereof
JP2001093882A (en) * 1999-09-22 2001-04-06 Ulvac Japan Ltd Temperature measuring device and vacuum treating device equipped with the same
JP2001153728A (en) * 1999-11-30 2001-06-08 Toppan Printing Co Ltd Method for measuring temperature of film, film forming device mounting the measurement system, and film forming method
US6352870B1 (en) * 2000-06-12 2002-03-05 Advanced Micro Devices, Inc. Method of endpointing plasma strip process by measuring wafer temperature

Also Published As

Publication number Publication date
JP4980568B2 (en) 2012-07-18
JP2005536049A (en) 2005-11-24
TW200407999A (en) 2004-05-16
WO2004015157A3 (en) 2004-04-01
WO2004015157A2 (en) 2004-02-19
AU2003262685A1 (en) 2004-02-25
CN1675406A (en) 2005-09-28
KR20050050079A (en) 2005-05-27
CN1675406B (en) 2010-05-12
TWI320951B (en) 2010-02-21

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase