CN102313599B - Device and method for measuring temperature of coupling window, and plasma equipment - Google Patents
Device and method for measuring temperature of coupling window, and plasma equipment Download PDFInfo
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- CN102313599B CN102313599B CN 201010221045 CN201010221045A CN102313599B CN 102313599 B CN102313599 B CN 102313599B CN 201010221045 CN201010221045 CN 201010221045 CN 201010221045 A CN201010221045 A CN 201010221045A CN 102313599 B CN102313599 B CN 102313599B
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Abstract
The invention provides a device and a method for measuring the temperature of a coupling window, and plasma equipment. The device for measuring the temperature of the coupling window is applied in the plasma equipment which comprises the coupling window and a reaction chamber, and comprises a temperature measuring terminal which is positioned on the lower surface of the coupling window and an infrared temperature measuring instrument which is used for measuring the temperature measuring terminal to determine the temperature of the lower surface of the coupling window, wherein the temperature measuring terminal has emissivity which is different from that of the coupling window; and the lower surface of the coupling window is a surface, which is arranged towards the inside of the reaction chamber, of the coupling window. In the embodiment of the invention, a mode that a thermocouple is used for contact-type temperature measurement in the prior art is replaced by a non-contact temperature measurement mode, so that the temperature of the lower surface of the coupling window can be directly acquired, and the measurement accuracy of the temperature can be improved; and the device is convenient to mount and maintain, the thermocouple is not required to be arranged in the coupling window, the service life of the coupling window is effectively prolonged, and the operation cost of equipment is reduced.
Description
Technical field
The present invention relates to technical field of semiconductors, relate in particular to a kind of temperature measuring equipment, plasma apparatus and thermometry of coupling window.
Background technology
Plasma apparatus is widely used in the manufacturing process of the semiconductor devices such as integrated circuit (IC), for example, inductively coupled plasma equipment, in the manufacturing of semiconductor devices, it can by the plasma that produces with multilayer material replace deposit to substrate surface and from this multilayer material of substrate surface etching.Wherein, the accurate temperature control of plasma reaction chamber is played vital effect to the etching technics result, can directly affect the homogeneity of etch rate and the homogeneity of device critical size, and can reduce the particle deposition of reaction chamber sidewall, impel volatile residue in time to discharge reaction chamber, can also effectively prolong the cycle of preventive maintenance.
In the prior art, the control of the temperature of plasma reaction chamber adopts the mode that the electrostatic chuck of reaction chamber bottom and reaction chamber sidewall are carried out accurate temperature control to realize usually, the temperature of this two aspect is controlled comparative maturity, yet, in etching process, coupling window also can produce important impact in the temperature on the surface of orientating reaction chamber interior (lower surface) for the etching technics quality.In actual process, as shown in Figure 1, the coupling window 12 that is positioned at reaction chamber 11 tops is realized the rising of temperature by the technological process that increases the plasma starter, and the measurement of its temperature then realizes by the thermopair 13 that is installed on the coupling window 12.
Yet, the inventor finds through research, because what require control in the actual process is the temperature of coupling window 12 lower surfaces (11 inside, orientating reaction chamber), and thermopair 13 can only be installed in the middle part of coupling window 12 in the prior art, what measure is the temperature at coupling window 12 middle parts, so the measurement to coupling window 12 underlaying surface temperatures in the prior art is inaccurate, and then affected the temperature controlled accuracy to coupling window 12.
Summary of the invention
The embodiment of the invention provides a kind of temperature measuring equipment, plasma apparatus and thermometry of coupling window, can improve the accuracy that the coupling window underlaying surface temperature is measured.
In order to solve the problems of the technologies described above, the technical scheme of the embodiment of the invention is as follows:
A kind of temperature measuring equipment of coupling window, be applied to comprise in the plasma apparatus of coupling window and reaction chamber, described device comprises the temperature measurement terminal that is positioned at described coupling window lower surface and is used for by described temperature measurement terminal being measured determine the infrared thermometry instrument of described coupling window underlaying surface temperature, described temperature measurement terminal has the emissivity different from described coupling window, wherein, described coupling window lower surface is the surface towards described reaction chamber inside of described coupling window.
Further, the material of described temperature measurement terminal is glass.
Further, the outside surface of described temperature measurement terminal is coated with the material of plasma resistant bombardment.
Further, the material of described plasma resistant bombardment is pottery.
Further, the surface of contact of described temperature measurement terminal and described coupling window lower surface is that diameter is greater than the circle of 2.5mm.
Further, described temperature measurement terminal is that the length of side is the cube of 5mm.
Further, the ultrared wavelength coverage sent of described infrared thermometry instrument is 3um～5um.
Further, the probe of described infrared thermometry instrument is installed in the upper surface of described coupling window, and the position of described probe is relative with described temperature measurement terminal, and described upper surface is relative with the lower surface of described coupling window.
A kind of plasma apparatus, comprise coupling window and reaction chamber, have on the lower surface of described coupling window for the infrared thermometry instrument and measure to determine the temperature measurement terminal of described coupling window underlaying surface temperature, described temperature measurement terminal has the emissivity different from described coupling window, wherein, described coupling window lower surface is the surface towards described reaction chamber inside of described coupling window.
Further, the material of described temperature measurement terminal is glass.
Further, the outside surface of described temperature measurement terminal is coated with the material of plasma resistant bombardment.
Further, the material of described plasma resistant bombardment is pottery.
Further, the surface of contact of described temperature measurement terminal and described coupling window lower surface is that diameter is greater than the circle of 2.5mm.
Further, described temperature measurement terminal is that the length of side is the cube of 5mm.
Further, also be provided with the probe of infrared thermometry instrument on the upper surface of described coupling window, and the position of described probe is relative with described temperature measurement terminal, described upper surface is relative with the lower surface of described coupling window.
A kind of thermometry of coupling window is applied to comprise in the plasma apparatus of coupling window and reaction chamber, comprising:
The contraposition of infrared thermometry instrument is measured in the temperature measurement terminal of described coupling window lower surface;
Determine the temperature of described coupling window lower surface;
Wherein, described temperature measurement terminal is different from the emissivity of described coupling window, and described coupling window lower surface is the surface towards described reaction chamber inside of described coupling window.
Further, the ultrared wavelength coverage sent of described infrared thermometry instrument is 3um～5um.
The embodiment of the invention arranges temperature measurement terminal by the lower surface at coupling window, then utilize external infrared thermometry instrument that this temperature measurement terminal is carried out temperature survey, determined the temperature of coupling window lower surface, the contact temperature-measuring that this non-contact temperature measuring mode has replaced the available technology adopting thermopair to carry out, not only can directly obtain the temperature of coupling window lower surface, improve thermometric accuracy, and be convenient to installation and maintenance, need not in coupling window, to assign thermopair, effectively prolong the serviceable life of coupling window, reduced the operation cost of equipment.
Description of drawings
Shown in accompanying drawing, above-mentioned and other purpose of the present invention, Characteristics and advantages will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Deliberately do not draw accompanying drawing by physical size equal proportion convergent-divergent, focus on illustrating purport of the present invention.
Fig. 1 is plasma apparatus structural representation of the prior art;
Fig. 2 is the structural representation of the temperature measuring equipment of a kind of coupling window of the embodiment of the invention;
Fig. 3 is the structural representation of a kind of plasma apparatus of the embodiment of the invention;
Fig. 4 is the thermometry process flow diagram of a kind of coupling window of the embodiment of the invention.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing the specific embodiment of the present invention is described in detail.
Set forth in the following description a lot of details so that fully understand the present invention, implement but the present invention can also adopt other to be different from alternate manner described here, so the present invention has not been subjected to the restriction of following public specific embodiment.
Secondly, the present invention is described in detail in conjunction with synoptic diagram, when the embodiment of the invention is described in detail in detail; for ease of explanation; the sectional view of indication device structure can be disobeyed general ratio and be done local the amplification, and described synoptic diagram is example, and it should not limit the scope of protection of the invention at this.The three-dimensional space that in actual fabrication, should comprise in addition, length, width and the degree of depth.
In the prior art, the temperature of coupling window lower surface is to measure by inserting at the thermopair at coupling window middle part in the plasma-reaction-chamber, the inventor studies discovery, the material of coupling window is quartzy, because quartzy coefficient of heat conductivity is very little, so the temperature at the coupling window that records with thermopair middle part and the temperature of coupling window lower surface (orientating reaction chamber) are discrepant, temperature survey to the coupling window lower surface in the prior art is inaccurate, and rear extended meeting impact is to the temperature controlled accuracy of coupling window.And, the inventor further studies discovery, the temperature contrast of this coupling window middle part and lower surface can't compensate by the mode of calibration, even if because use same plasma glow start technique to heat up to coupling window, because the idle Time Inconsistency of each plasma apparatus on the production line, cause easily actual point for measuring temperature between each device (coupling window middle part) all not identical with the temperature contrast of target point for measuring temperature (coupling window lower surface), so can't carry out compensation for calibrating errors.The inventor also finds, for reach accurate thermometric the installation of TC as far as possible near the method for the lower surface of coupling window, that is to say that the coupling window that allows under the thermopair is very thin, this can reduce the serviceable life of coupling window greatly, because coupling window can consume under the bombardment of plasma, the place that thermopair has been installed is vacuum breaker at first, and this moment, coupling window was just destroyed.
Based on the inventor in the prior art to the temp measuring method of coupling window and analysis that may scheme, the application has proposed a kind of temperature measuring equipment of coupling window, plasma apparatus and thermometry, wherein, this temperature measuring equipment arranges temperature measurement terminal at the lower surface of coupling window, then by external infrared thermometry instrument this temperature measurement terminal is carried out temperature survey, determined the temperature of coupling window lower surface, the contact temperature-measuring that this non-contact temperature measuring device has replaced the available technology adopting thermopair to carry out, not only can directly obtain the temperature of coupling window lower surface, improve thermometric accuracy, and be convenient to installation and maintenance, need not in coupling window, to assign thermopair, effectively prolonged the serviceable life of coupling window.
Below in conjunction with drawings and Examples, technical scheme of the present invention is described.
Referring to Fig. 2, be the structural representation of the temperature measuring equipment of a kind of coupling window of the embodiment of the invention.
The temperature measuring equipment of coupling window can be applied in the plasma apparatus, comprises coupling window and reaction chamber in this plasma equipment.This temperature measuring equipment mainly comprises two parts, is respectively temperature measurement terminal and the infrared thermometry instrument that is positioned at the coupling window lower surface, and wherein, the lower surface of coupling window is the surface of coupling window orientating reaction chamber interior.This infrared thermometry instrument is used for temperature measurement terminal is measured to determine the temperature of coupling window lower surface, wherein, temperature measurement terminal is different from the emissivity of coupling window, thereby this infrared thermometry instrument can be measured the temperature of temperature measurement terminal according to the emissivity of temperature measurement terminal.
In the present embodiment, the concrete structure of this coupling window temperature measuring equipment, as shown in Figure 2.This application of installation is in plasma apparatus, and this equipment comprises reaction chamber 21 and is positioned at the coupling window 22 of reaction chamber 21 tops.
This temperature measuring equipment comprises temperature measurement terminal 31 and infrared thermometry instrument 32.Temperature measurement terminal 31 is positioned at the lower surface 221 of coupling window 22, also is the surface of 21 inside, coupling window orientating reaction chambers 22, thereby can in follow-up thermometric process, can know the temperature of the lower surface 221 of coupling window 22 by the temperature of measuring temperature measurement terminal 31.According to the principle of work of infrared thermometry instrument 32, can detect the temperature of temperature measurement terminal 31 in order to make infrared thermometry instrument 32, temperature measurement terminal 31 selected material requires have the emissivity different from coupling window 22.
In the present embodiment, if the material of coupling window 22 is quartzy, then the material of temperature measurement terminal 31 can be selected glass, glass has the emissivity different from quartz, and, glass also possesses RF-coupled rate good and coefficient of heat conductivity and the quartzy characteristics that approach, and can reduce like this impact that temperature measurement terminal 31 plasmas produce, and can have identical temperature susceplibility with coupling window 22.But; glass is the same with quartz all can be consumed under plasma bombardment; and; glass is because the problem of purity; after by bombardment, may produce impurity; pollute reaction chamber 21; so; in the present embodiment, if the material of the easy subject plasma bombardments such as temperature measurement terminal 31 selection glass, then the outside surface of temperature measurement terminal 31 can also be coated with the material of plasma resistant bombardment; this material can have a lot of selections in nonmetal the inside; in the present embodiment, be coated with pottery 311 on the outside surface of temperature measurement terminal 31, glass and quartzy coefficient of heat conductivity are far longer than pottery; so the adding of pottery can not have influence on thermometric; and pottery can not bombarded by cover glass, does not bring impurity, and; because pottery easy consumption not in the use procedure of quartz cover; play the protection to the quartz of the glass of wrapping portion and contact portion, so this structure is nonvolatil, basically need not consider installation and maintenance.Further, temperature measurement terminal 31 can also be installed on the coupling window 22 and be difficult for the position arrived by plasma bombardment, such as on the more sparse circumference of coil.
In addition, because the size of temperature measurement terminal 32 is less, then coupling window 22 is just less on the impact that original performance produces because of the change of structure, so the size of temperature measurement terminal 32 is the smaller the better, concerning infrared thermometry instrument 32, the size of temperature measurement terminal 31 depends on the installation site of probe 321 of infrared thermometry instrument and the distance coefficient of infrared thermometry instrument, this distance coefficient is D:S, wherein, D is the distance of probe and measurand, and S is the area of testee, for a selected infrared thermometry instrument, D is less, S just can be less, so, in the present embodiment, the probe 321 of infrared thermometry instrument 32 is installed in the upper surface of coupling window 22, and 321 the position of popping one's head in is relative with temperature measurement terminal 31, and wherein coupling window 22 upper surfaces are relative with the lower surface of coupling window 22, like this, D reaches minimum value, i.e. the thickness of coupling window 22.Generally the thickness of coupling window 22 is less than 50mm, and general infrared thermometry instrument distance coefficient can accomplish 20: 1, then under this condition the surface of contact of temperature measurement terminal 31 and coupling window 22 lower surfaces to be diameter get final product greater than the circle of 2.5mm.In the present embodiment, temperature measurement terminal 31 is the cube of length of side 5mm, and the temperature measurement terminal 31 that outside surface is coated with pottery 311 can be the cube of length of side 10mm.
The present embodiment temperature measuring equipment arranges temperature measurement terminal by the lower surface at coupling window, then by external infrared thermometry instrument this temperature measurement terminal is carried out temperature survey, determined the temperature of coupling window lower surface, the contact temperature-measuring that this non-contact temperature measuring device has replaced the available technology adopting thermopair to carry out, not only can directly obtain the temperature of coupling window lower surface, improve thermometric accuracy, and be convenient to installation and maintenance, need not in coupling window, to assign thermopair, effectively prolonged the serviceable life of coupling window.
In other embodiments of the invention, if coupling window is other material outside the quartz, then temperature measurement terminal also can be selected other material, as long as have different emissivity from coupling window; The plasma resistant bombardment material that covers the temperature measurement terminal outside surface also can be selected other material except pottery.The infrared thermometry instrument can be determined best Infrared wavelength according to the material of temperature measurement terminal and coupling window, can also further determine according to the installation site of the distance coefficient of infrared thermometry instrument and probe the size of temperature measurement terminal.
As shown in Figure 3, be the structural representation of a kind of plasma apparatus of the embodiment of the invention.
In the present embodiment, this plasma equipment comprises reaction chamber 41 and the coupling window 42 that is positioned at reaction chamber 41 tops.Has temperature measurement terminal 421 on the lower surface of coupling window 42, be used for the infrared thermometry instrument by measuring this temperature measurement terminal 421 to determine the temperature of coupling window 42 lower surfaces, temperature measurement terminal 421 is different from the emissivity of coupling window 42, wherein, coupling window 42 lower surfaces are the surface of the orientating reaction chamber interior of coupling window 42.
In the present embodiment, the material of temperature measurement terminal 421, outside surface coverture, size, and the position on coupling window 42 lower surfaces etc. can with aforementioned temperature measurement mechanism embodiment in temperature measurement terminal 31 similar, repeat no more herein.
In other embodiments, can also be provided with the probe of infrared thermometry instrument on the upper surface of coupling window, and the position of probe is relative with temperature measurement terminal.
In the plasma apparatus of present embodiment, lower surface at coupling window is provided with temperature measurement terminal, thereby can provide the detection target for external infrared thermometry instrument, so that the infrared thermometry instrument is by the temperature survey to this temperature measurement terminal, can determine the temperature of coupling window lower surface, the structure of this plasma equipment is as long as can realize non-contact temperature measuring by an infrared thermometry instrument, replaced the contact temperature-measuring mode of assigning thermopair to carry out at coupling window in the prior art, not only can obtain the temperature of coupling window lower surface simplely, improve thermometric accuracy, and be convenient to installation and maintenance, need not in coupling window, to assign thermopair, effectively prolonged the serviceable life of coupling window.
With reference to Fig. 4, be the thermometry process flow diagram of a kind of coupling window of the embodiment of the invention.
The method can comprise:
Step 401, the contraposition of infrared thermometry instrument is measured in the temperature measurement terminal of coupling window lower surface.
The infrared thermometry instrument emissivity different with temperature measurement terminal according to coupling window at first determined the emissivity of the target temperature measurement terminal of its detection, sends the infrared ray of certain wavelength, temperature measurement terminal detected, to obtain the temperature of temperature measurement terminal.
In the present embodiment, coupling window and temperature measurement terminal and previous embodiment are similar, repeat no more herein.The ultrared wavelength coverage that the infrared thermometry instrument sends can be 3um～5um.
Step 402 is determined the temperature of coupling window lower surface.
The coupling window lower surface is the surface of coupling window orientating reaction chamber interior.Because temperature measurement terminal is positioned at the lower surface of coupling window, record the surface temperature of temperature measurement terminal in upper step after, this temperature also is the temperature of coupling window lower surface.
The embodiment of the invention is carried out temperature survey by external infrared thermometry instrument contraposition in the temperature measurement terminal of coupling window lower surface, thereby determined the temperature of coupling window lower surface, the contact temperature-measuring that the mode of this non-contact temperature measuring has replaced the available technology adopting thermopair to carry out, not only can directly obtain the temperature of coupling window lower surface, improve thermometric accuracy, and be convenient to installation and maintenance, need not in coupling window, to assign thermopair, effectively prolong the serviceable life of coupling window, reduced the operation cost of equipment.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction.
Although the present invention discloses as above with preferred embodiment, yet is not to limit the present invention.Any those of ordinary skill in the art, do not breaking away from the technical solution of the present invention scope situation, all can utilize method and the technology contents of above-mentioned announcement that technical solution of the present invention is made many possible changes and modification, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solution of the present invention according to any simple modification, equivalent variations and the modification that technical spirit of the present invention is done above embodiment, all still belongs in the scope of technical solution of the present invention protection.
Claims (15)
1. the temperature measuring equipment of a coupling window, be applied to comprise in the plasma apparatus of coupling window and reaction chamber, it is characterized in that, described device comprises the temperature measurement terminal that is positioned at described coupling window lower surface and is used for by described temperature measurement terminal being measured determine the infrared thermometry instrument of described coupling window underlaying surface temperature, described temperature measurement terminal has the emissivity different from described coupling window, wherein, described coupling window lower surface is the surface towards described reaction chamber inside of described coupling window; The material of described coupling window is quartzy, and the material of described temperature measurement terminal is glass.
2. device according to claim 1 is characterized in that, the outside surface of described temperature measurement terminal is coated with the material of plasma resistant bombardment.
3. device according to claim 2 is characterized in that, the material of described plasma resistant bombardment is pottery.
4. the described device of any one in 3 according to claim 1 is characterized in that the surface of contact of described temperature measurement terminal and described coupling window lower surface is that diameter is greater than the circle of 2.5mm.
5. the described device of any one in 3 according to claim 1 is characterized in that described temperature measurement terminal is that the length of side is the cube of 5mm.
6. the described device of any one in 3 according to claim 1 is characterized in that the ultrared wavelength coverage that described infrared thermometry instrument sends is 3um ~ 5um.
7. the described device of any one in 3 according to claim 1, it is characterized in that, the probe of described infrared thermometry instrument is installed in the upper surface of described coupling window, and the position of described probe is relative with described temperature measurement terminal, and described upper surface is relative with the lower surface of described coupling window.
8. plasma apparatus, comprise coupling window and reaction chamber, it is characterized in that, have on the lower surface of described coupling window for the infrared thermometry instrument and measure to determine the temperature measurement terminal of described coupling window underlaying surface temperature, described temperature measurement terminal has the emissivity different from described coupling window, wherein, described coupling window lower surface is the surface towards described reaction chamber inside of described coupling window; The material of described coupling window is quartzy, and the material of described temperature measurement terminal is glass.
9. plasma apparatus according to claim 8 is characterized in that, the outside surface of described temperature measurement terminal is coated with the material of plasma resistant bombardment.
10. plasma apparatus according to claim 9 is characterized in that, the material of described plasma resistant bombardment is pottery.
11. the described plasma apparatus of any one in 10 is characterized in that the surface of contact of described temperature measurement terminal and described coupling window lower surface is that diameter is greater than the circle of 2.5mm according to claim 8.
12. the described plasma apparatus of any one in 10 is characterized in that described temperature measurement terminal is that the length of side is the cube of 5mm according to claim 8.
13. the described plasma apparatus of any one in 10 according to claim 8, it is characterized in that, also be provided with the probe of infrared thermometry instrument on the upper surface of described coupling window, and the position of described probe is relative with described temperature measurement terminal, and described upper surface is relative with the lower surface of described coupling window.
14. the thermometry of a coupling window is applied to comprise in the plasma apparatus of coupling window and reaction chamber, it is characterized in that, comprising:
The contraposition of infrared thermometry instrument is measured in the temperature measurement terminal of described coupling window lower surface;
Determine the temperature of described coupling window lower surface;
Wherein, described temperature measurement terminal is different from the emissivity of described coupling window, and described coupling window lower surface is the surface towards described reaction chamber inside of described coupling window; The material of described coupling window is quartzy, and the material of described temperature measurement terminal is glass.
15. method according to claim 14 is characterized in that, the ultrared wavelength coverage that described infrared thermometry instrument sends is 3um ~ 5um.
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| CN105088353B (en) * | 2014-05-04 | 2018-07-06 | 北京北方华创微电子装备有限公司 | Plasma reaction equipment and its temperature monitoring method |
| CN106711063B (en) * | 2015-11-18 | 2019-07-05 | 北京北方华创微电子装备有限公司 | Cooling chamber and semiconductor processing equipment |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1675406A (en) * | 2002-08-13 | 2005-09-28 | 郎姆研究公司 | Methods and apparatus for in situ substrate temperature monitoring by electromagnetic radiation emission |
| CN101156056A (en) * | 2005-04-01 | 2008-04-02 | 朗姆研究公司 | Accurate temperature measurement for semiconductor applications |
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| JPS60253939A (en) * | 1984-05-31 | 1985-12-14 | Fujitsu Ltd | Measuring method of substrate temperature |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1675406A (en) * | 2002-08-13 | 2005-09-28 | 郎姆研究公司 | Methods and apparatus for in situ substrate temperature monitoring by electromagnetic radiation emission |
| CN101156056A (en) * | 2005-04-01 | 2008-04-02 | 朗姆研究公司 | Accurate temperature measurement for semiconductor applications |
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