JPS60253939A - Measuring method of substrate temperature - Google Patents
Measuring method of substrate temperatureInfo
- Publication number
- JPS60253939A JPS60253939A JP59111233A JP11123384A JPS60253939A JP S60253939 A JPS60253939 A JP S60253939A JP 59111233 A JP59111233 A JP 59111233A JP 11123384 A JP11123384 A JP 11123384A JP S60253939 A JPS60253939 A JP S60253939A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- temperature
- quartz
- infrared
- inspection hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 13
- 238000000034 method Methods 0.000 title claims description 22
- 239000010453 quartz Substances 0.000 claims abstract description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 27
- 230000005540 biological transmission Effects 0.000 claims abstract description 9
- 239000003779 heat-resistant material Substances 0.000 claims abstract description 5
- 230000003287 optical effect Effects 0.000 abstract description 4
- 238000007689 inspection Methods 0.000 abstract 6
- 235000012431 wafers Nutrition 0.000 description 35
- 238000010438 heat treatment Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- RCJVRSBWZCNNQT-UHFFFAOYSA-N dichloridooxygen Chemical compound ClOCl RCJVRSBWZCNNQT-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 235000006732 Torreya nucifera Nutrition 0.000 description 1
- 244000111306 Torreya nucifera Species 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0801—Means for wavelength selection or discrimination
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/04—Casings
- G01J5/041—Mountings in enclosures or in a particular environment
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/04—Casings
- G01J5/046—Materials; Selection of thermal materials
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0801—Means for wavelength selection or discrimination
- G01J5/0802—Optical filters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0875—Windows; Arrangements for fastening thereof
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
- G01J5/0007—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter of wafers or semiconductor substrates, e.g. using Rapid Thermal Processing
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Radiation Pyrometers (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
（ａ）発明の技術分野
本発明は赤外線温度針を用いて被処理基板温度を＠瓜良
く測定する方法に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to a method for precisely measuring the temperature of a substrate to be processed using an infrared temperature needle.
（ｂ）技術の背景
情報処理の高速化と大容量化とを達成する１段として電
算機が使用されており、この仙算素子或いば記１，９素
子として使用されるＩ’Ｃ，ＬＳＩなどの半導体素子は
華位素子の小形化による築積度の増加と量産化とが非常
な努力で押し進められていここで半導体素子の製作はロ
ッド状の半導体単結晶を厚さ約５００ｐｍの薄板（以下
ウェハと云う）に切断し、研磨などの表面処理を行って
平消でｌｆ７浄な表面状態とした後、このウェハを伯位
として薄膜形成技術と写真食刻技術（ホトリソグラフィ
）とを使用してパターン形成や窓開けを行い、不純物圧
入や熱処理を繰り返すことにより多層構造をとる半導体
素子をウェハ」−に数多く形成し、最後にスクライブ処
理により切り出してＩＣ，ＬＳＩなどの半導体素子が作
られている。(b) Background of the technology Computers are used as one stage to achieve higher speed and larger capacity information processing, and the I'C, which is used as the arithmetic element or the element 1, Semiconductor devices such as LSI are being pushed forward with great efforts to increase the degree of construction and mass production by miniaturizing the size of the device.The production of semiconductor devices is made by converting rod-shaped semiconductor single crystals into thin sheets with a thickness of about 500 pm. After cutting the wafer into wafers (hereinafter referred to as wafers) and performing surface treatments such as polishing to obtain a flat, lf7-clean surface, we applied thin film formation technology and photolithography to these wafers. A wafer is used to form patterns and open windows, and by repeating impurity injection and heat treatment, many semiconductor elements with a multilayer structure are formed on a wafer.Finally, they are cut out using a scribing process to create semiconductor elements such as ICs and LSIs. It is being
かかる半導体素子の型造工程において高温処理を短時間
行うことが必要な条件では従来のように電気かで熱処理
する方法よりも複数個の赤外線ランプを備えた加熱炉の
なかにウェハを置き必要な時間たけランプを加熱する方
法か有利である。In the semiconductor device molding process, when high-temperature treatment is required for a short period of time, it is necessary to place the wafer in a heating furnace equipped with multiple infrared lamps, rather than the conventional method of heat treatment using an electric oven. A method of heating the lamp over time is advantageous.
例えはＣＭＯＳトランジスタを作る場合、シリコン（Ｓ
ｉ ）ウェハの十にｐチャンネルとｎチャンネルのソー
ス、トレイン拡散領域を作り、この上に鱗珪酸ガラス（
略称ＰＳＧ）を化学気相成長法（略称ＣＶＤ）を用いて
形成し被覆した後、リアクティブ・イオンエツチング法
でＰＳＧＨにコンタクト窓を形成し、更にこの上にアル
ミニウム（ＡＩ）を蒸着し、これにポトエノチンクを施
して導体パターンを形成する工程がある。For example, when making a CMOS transistor, silicon (S
i) Fabricate p-channel and n-channel source and train diffusion regions on the top of the wafer, and deposit scaly silicate glass (
After forming and coating PSGH (abbreviated as PSG) using chemical vapor deposition method (abbreviated as CVD), a contact window is formed on PSGH using reactive ion etching method, and aluminum (AI) is further deposited on this. There is a process in which a conductive pattern is formed by potoenoting.
ここでＣＶ、Ｄ法で形成したコンタクト窓はＰＳＧＨに
対し殆ど直角に開けられているので、この上に形成した
導体パターンはコンタクト窓のエツジの部分で断線を起
こし易い。Here, since the contact window formed by the CV or D method is opened almost perpendicularly to the PSGH, the conductor pattern formed thereon is likely to be disconnected at the edge of the contact window.
そのためコンタクト窓を形成したのち、ウェハを加熱し
てＰＳＧの焼きなましを行い角をとる必要がある。Therefore, after forming the contact window, it is necessary to heat the wafer and anneal the PSG to obtain a square shape.
然しこの処理時間か永くなるとＰＳＧを構成する燐（Ｐ
）がｐ領域にまで拡散して素子を不良とする恐れがある
。However, as this processing time becomes longer, the phosphorus (P) that makes up PSG
) may diffuse into the p region, making the device defective.
そこで処理条件を例えは１２００°Ｃｌ２Ｏ秒と短時間
に留める必要かある。Therefore, it is necessary to keep the processing conditions to a short period of time, for example, 1200° Cl2O seconds.
そこで、このような場合ウェハを赤外線加熱かに入れ、
短時間たけ点燈ずれはこの目的を達成することができる
。Therefore, in such cases, the wafer should be placed in an infrared heating oven.
Short-term lighting shifts can achieve this purpose.
本発明はこのような赤外線加熱炉における温度測定方法
に関するものである。The present invention relates to a method for measuring temperature in such an infrared heating furnace.
（Ｃ）従来技術と問題点
ウェハなと被処理基板の温度を測定する方法として熱電
対を用いる方法と赤外線温度計を用いる方法か知られて
いる。(C) Prior Art and Problems There are two known methods for measuring the temperature of a wafer or a substrate to be processed: a method using a thermocouple and a method using an infrared thermometer.
ここで従来は熱電対を用いる方法か一般に用いられてい
る。すなわぢウェハのセット位置の近傍に熱電対の先端
を置き、それによりウェハの温度を測定する。Conventionally, a method using a thermocouple has been generally used. That is, the tip of a thermocouple is placed near the wafer set position, and the wafer temperature is thereby measured.
然し、この温度は厳密に言えばウェハ周辺の温度であっ
てウェハ自体の温度とは異なる。However, strictly speaking, this temperature is the temperature around the wafer and is different from the temperature of the wafer itself.
また測定積度を垢ずために熱電対をウェハに接触させる
と、熱電対の構成金属のウェハへの拡散が生して不良発
生の原因となる。Furthermore, if the thermocouple is brought into contact with the wafer in order to prevent measurement errors, the constituent metals of the thermocouple will diffuse into the wafer, causing defects.
一方赤外線温度計を用いる方法はウェハの処理温度の測
定には殆ど用いられていなかった。On the other hand, methods using infrared thermometers have hardly been used to measure the processing temperature of wafers.
その理由はウェハの汚染を防くために石英管のなかにウ
ェハを置き、これを通して温度を測定する必要かあるか
、赤外線温度計に検知する温度はウェハの温度よりも石
英管の温度が現れ易い。The reason for this is whether it is necessary to place the wafer in a quartz tube and measure the temperature through it to prevent contamination of the wafer. easy.
これらのことから確度は落らるが、熱電対をウェハの近
傍に置き測定する方法が一般に用いられていた。For these reasons, a method of measuring by placing a thermocouple near the wafer has generally been used, although the accuracy is lower.
（ｄ）発明の目的
本発明の目的は赤外線温度計を用いて高い精度でウェハ
の処理温度を測定する方法を提供するにある。(d) Object of the Invention An object of the present invention is to provide a method for measuring the processing temperature of a wafer with high accuracy using an infrared thermometer.
（ｅ）発明の構成
本発明の目的は赤外線ランプを用いて加熱した基板温度
の測定法として、該赤外線ランプを備えた炉体の石英管
に石英よりも長波長の透過領域をもつ耐熱材料を用いて
覗き窓を形成し、該覗き窓を通して被処理基板の温度を
赤外線温度計により測定することを特徴とする基板温度
の測定方法により達成することができる。(e) Structure of the Invention The purpose of the present invention is to provide a method for measuring the temperature of a heated substrate using an infrared lamp, in which a heat-resistant material having a transmission region of longer wavelength than quartz is used in a quartz tube of a furnace body equipped with the infrared lamp. This can be achieved by a substrate temperature measuring method characterized in that a viewing window is formed using the observation window, and the temperature of the substrate to be processed is measured with an infrared thermometer through the viewing window.
すなわち本発明は赤外線ランプによるウェハの加熱処理
を行う場合、石英ランプのカバーが石英製であり、また
必ずと言ってよいほど石英管を通してウェハの温度の測
定が行われる点に着目し、石英管に穴を開け、石英より
も長波長の透過領域を持つ材料で覗き窓を設けると共に
５．５乃至３０μｍの赤外線を検知する赤外線温度計に
よりウニ／”ｔの温度を直接に測定するものである。That is, the present invention focuses on the fact that when a wafer is heated using an infrared lamp, the cover of the quartz lamp is made of quartz, and the temperature of the wafer is almost always measured through the quartz tube. The temperature of the sea urchin can be directly measured using an infrared thermometer that detects infrared rays of 5.5 to 30 μm. .
（ｆ）発明の実施例
第１図は石英ランプのエネルギ分布図、第２図は石英や
覗き窓としての使用材料及びフィルタの波長透過特性ま
た第３図は本発明に係る実施例である。(f) Embodiment of the Invention FIG. 1 is an energy distribution diagram of a quartz lamp, FIG. 2 is a wavelength transmission characteristic of quartz, materials used as a viewing window, and filters, and FIG. 3 is an embodiment of the present invention.
すなわち赤外線加熱炉は第３図に示すように窒素、水素
或いはこの混合ガスのような非酸化性のガスを通ず石英
管】の上下に複数の赤外線ランプ２か配列しており、こ
れを点燈して石英管１のなかに置かれている被処理基板
（この場合はウェハ３）への加熱が行われている。In other words, as shown in Fig. 3, an infrared heating furnace has a plurality of infrared lamps 2 arranged above and below a quartz tube that does not pass a non-oxidizing gas such as nitrogen, hydrogen, or a mixture thereof. When the light is turned on, the substrate to be processed (wafer 3 in this case) placed in the quartz tube 1 is heated.
ここで赤外線ランプ（以下略してランプ）２のエネルギ
分布は第１図のようであり、この加熱によりウェハ３の
温度は上昇し、温度に対応した赤外線を放射する。Here, the energy distribution of the infrared lamp (hereinafter simply referred to as a lamp) 2 is as shown in FIG. 1, and the temperature of the wafer 3 rises due to this heating, and infrared rays corresponding to the temperature are emitted.
本発明はこの赤外線を検知するために石英管番コ覗き窓
４を設けると共にランプの献体５にも覗き穴６を設けて
外部からウェハ３の検知かできるようにする。In the present invention, a quartz tube observation window 4 is provided in order to detect this infrared rays, and a observation hole 6 is also provided in the lamp body 5 so that the wafer 3 can be detected from the outside.
ここで覗き穴６を通してウェハ３を観察する場合を考察
すると、検知される光はウェハ３と石英管１からの赤外
線である。Now, considering the case where the wafer 3 is observed through the peephole 6, the detected light is infrared rays from the wafer 3 and the quartz tube 1.
今石英管１に覗き窓４かなく、石英管たけの場合は石英
の透過率の波長特性は第２図の実線７で表されるから０
．２乃至約３μｍの波長領域以外の光は吸収されて検知
することかできない。Now, if the quartz tube 1 does not have the viewing window 4 and is just a quartz tube, the wavelength characteristic of the transmittance of quartz is expressed by the solid line 7 in Figure 2, so it is 0.
．． Light outside the wavelength range of 2 to about 3 μm is absorbed and cannot be detected.
またウェハ３と石英管１の温度を比較すると、ランプ２
に接近している石英管１の温度の方か商い場合もあるの
で赤外線検知器８で検知する温度ばウェハ自身の温度と
は限らない。Also, when comparing the temperatures of wafer 3 and quartz tube 1, lamp 2
The temperature detected by the infrared detector 8 is not necessarily the temperature of the wafer itself, since the temperature of the quartz tube 1, which is close to the temperature, may be higher than that of the wafer.
そこで本発明は覗き窓４の材料として石英よりも長波長
の透過波長領域をもつ耐熱性材料を用いる。例えば第２
図で破線９で示すザファイアや２点破線１０で示ずケル
マニウム（Ｇｅ ）なとかこれである。Therefore, in the present invention, a heat-resistant material having a transmission wavelength range longer than that of quartz is used as the material for the viewing window 4. For example, the second
These include zaphire, which is indicated by a broken line 9 in the figure, and kermanium (Ge), which is not indicated by a two-dot broken line 10.
このように長波長を透過する覗き窓４を設けるとウェハ
３からの赤外線を取り出すことができ、次ぎに赤外線検
知器８との間に石英の透過波長をカットする光学的バン
ドパスフィルタ（以−ト略してフィルタ）１１を置けば
ウェハ３からだけの赤外線を検知することができる。By providing the viewing window 4 that transmits long wavelengths in this way, the infrared rays from the wafer 3 can be taken out, and then an optical bandpass filter (hereinafter referred to as an If a filter 11 is provided, infrared rays only from the wafer 3 can be detected.
＄２図の１点破線１２は実施例で使用したフィルタの特
性を示すものである。A dotted line 12 in the $2 diagram shows the characteristics of the filter used in the example.
このように透過域が長波長の覗き窓４を用いると共にフ
ィルタを使用することによってウェハ３の温度を直接に
測定することができる。In this way, the temperature of the wafer 3 can be directly measured by using the viewing window 4 whose transmission range is a long wavelength and by using a filter.
（ｇ）発明の効果
本発明は赤外線加熱かにおける被処理基板の温度を赤外
線温度計で測定する方法を提供するもので、本発明の実
施により、石英管を通して被処理基板の温度測定か可能
となる。(g) Effects of the Invention The present invention provides a method for measuring the temperature of a substrate to be processed in an infrared heating oven using an infrared thermometer. By implementing the present invention, it is possible to measure the temperature of a substrate to be processed through a quartz tube. Become.
第１図は赤外線ランプのエネルギ分布図、第２図は覗き
窓の材料と実施例に用いた光学的バンドパスフィルタの
波長透過特性また第３図は本発明を実施した装置のｌ＃
ｉ面図である。
図において ｌはイ１英管、２ば赤外線う７・ブ、３は
被処理基板、４ば覗き窓、６は覗き穴、８は赤外線温度
計、１１は光学的バントパスフィルタ。
茅 １ 囚Figure 1 is an energy distribution diagram of the infrared lamp, Figure 2 is the material of the viewing window and the wavelength transmission characteristics of the optical bandpass filter used in the example, and Figure 3 is the l# of the device implementing the present invention.
It is an i-side view. In the figure, 1 is an infrared thermometer, 2 is an infrared tube, 3 is a substrate to be processed, 4 is a viewing window, 6 is a peephole, 8 is an infrared thermometer, and 11 is an optical bandpass filter. Kaya 1 prisoner
Claims (1)
して、該赤外線ランプを備えた炉体の石英危にイコ英よ
りも長波長の通過領域をもつ耐熱材料を用いて覗き窓を
形成し、該覗き窓を通して被処理基板の温度を赤外線温
度計により測定するごとを特徴とする基板温度の測定方
法。Group h7 heated using an infrared lamp! As a method for measuring A degrees, a viewing window is formed using a heat-resistant material that has a longer wavelength transmission region than the quartz of the furnace body equipped with the infrared lamp, and the temperature of the substrate to be processed is measured through the viewing window. A method for measuring substrate temperature, characterized in that each time the temperature is measured using an infrared thermometer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59111233A JPS60253939A (en) | 1984-05-31 | 1984-05-31 | Measuring method of substrate temperature |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59111233A JPS60253939A (en) | 1984-05-31 | 1984-05-31 | Measuring method of substrate temperature |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60253939A true JPS60253939A (en) | 1985-12-14 |
Family
ID=14555933
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59111233A Pending JPS60253939A (en) | 1984-05-31 | 1984-05-31 | Measuring method of substrate temperature |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60253939A (en) |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62163933U (en) * | 1986-04-08 | 1987-10-17 | ||
| JPH0196926A (en) * | 1987-10-09 | 1989-04-14 | Fujitsu Ltd | Lamp heating |
| EP0339458A2 (en) * | 1988-04-27 | 1989-11-02 | AG Processing Technologies, Inc. | Method and apparatus for sensing the temperature of a remote object |
| DE4012615A1 (en) * | 1990-04-20 | 1991-10-24 | T Elektronik Gmbh As | Combined contactless temp. measuring of wafer being processed - using quartz glass or material to absorb optical radiation components between radiation source and semiconductor wafer |
| US5061084A (en) * | 1988-04-27 | 1991-10-29 | Ag Processing Technologies, Inc. | Pyrometer apparatus and method |
| US5114242A (en) * | 1990-12-07 | 1992-05-19 | Ag Processing Technologies, Inc. | Bichannel radiation detection method |
| US5165796A (en) * | 1990-12-07 | 1992-11-24 | Ag Processing Technologies, Inc. | Bichannel radiation detection apparatus |
| US5180226A (en) * | 1991-10-30 | 1993-01-19 | Texas Instruments Incorporated | Method and apparatus for precise temperature measurement |
| US5188458A (en) * | 1988-04-27 | 1993-02-23 | A G Processing Technologies, Inc. | Pyrometer apparatus and method |
| US5226732A (en) * | 1992-04-17 | 1993-07-13 | International Business Machines Corporation | Emissivity independent temperature measurement systems |
| US5359693A (en) * | 1991-07-15 | 1994-10-25 | Ast Elektronik Gmbh | Method and apparatus for a rapid thermal processing of delicate components |
| US5683538A (en) * | 1994-12-23 | 1997-11-04 | International Business Machines Corporation | Control of etch selectivity |
| US5683173A (en) * | 1990-01-19 | 1997-11-04 | Applied Materials, Inc. | Cooling chamber for a rapid thermal heating apparatus |
| US6016383A (en) * | 1990-01-19 | 2000-01-18 | Applied Materials, Inc. | Rapid thermal heating apparatus and method including an infrared camera to measure substrate temperature |
| US6072160A (en) * | 1996-06-03 | 2000-06-06 | Applied Materials, Inc. | Method and apparatus for enhancing the efficiency of radiant energy sources used in rapid thermal processing of substrates by energy reflection |
| US7275861B2 (en) | 2005-01-31 | 2007-10-02 | Veeco Instruments Inc. | Calibration wafer and method of calibrating in situ temperatures |
| CN102313599A (en) * | 2010-06-29 | 2012-01-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Device and method for measuring temperature of coupling window, and plasma equipment |
-
1984
- 1984-05-31 JP JP59111233A patent/JPS60253939A/en active Pending
Cited By (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62163933U (en) * | 1986-04-08 | 1987-10-17 | ||
| JPH0196926A (en) * | 1987-10-09 | 1989-04-14 | Fujitsu Ltd | Lamp heating |
| US5188458A (en) * | 1988-04-27 | 1993-02-23 | A G Processing Technologies, Inc. | Pyrometer apparatus and method |
| EP0339458A2 (en) * | 1988-04-27 | 1989-11-02 | AG Processing Technologies, Inc. | Method and apparatus for sensing the temperature of a remote object |
| US5061084A (en) * | 1988-04-27 | 1991-10-29 | Ag Processing Technologies, Inc. | Pyrometer apparatus and method |
| US5326171A (en) * | 1988-04-27 | 1994-07-05 | A G Processing Technologies, Inc. | Pyrometer apparatus and method |
| US5840125A (en) * | 1990-01-19 | 1998-11-24 | Applied Materials, Inc. | Rapid thermal heating apparatus including a substrate support and an external drive to rotate the same |
| US6016383A (en) * | 1990-01-19 | 2000-01-18 | Applied Materials, Inc. | Rapid thermal heating apparatus and method including an infrared camera to measure substrate temperature |
| US6434327B1 (en) | 1990-01-19 | 2002-08-13 | Applied Materials, Inc. | Rapid thermal heating apparatus and method including an infrared camera to measure substrate temperature |
| US6122439A (en) * | 1990-01-19 | 2000-09-19 | Applied Materials, Inc. | Rapid thermal heating apparatus and method |
| US5790751A (en) * | 1990-01-19 | 1998-08-04 | Applied Materials, Inc. | Rapid thermal heating apparatus including a plurality of light pipes and a pyrometer for measuring substrate temperature |
| US5767486A (en) * | 1990-01-19 | 1998-06-16 | Applied Materials, Inc. | Rapid thermal heating apparatus including a plurality of radiant energy sources and a source of processing gas |
| US5743643A (en) * | 1990-01-19 | 1998-04-28 | Applied Materials, Inc. | Rapid thermal heating apparatus and method |
| US5708755A (en) * | 1990-01-19 | 1998-01-13 | Applied Materials, Inc. | Rapid thermal heating apparatus and method |
| US5683173A (en) * | 1990-01-19 | 1997-11-04 | Applied Materials, Inc. | Cooling chamber for a rapid thermal heating apparatus |
| US5689614A (en) * | 1990-01-19 | 1997-11-18 | Applied Materials, Inc. | Rapid thermal heating apparatus and control therefor |
| DE4012615A1 (en) * | 1990-04-20 | 1991-10-24 | T Elektronik Gmbh As | Combined contactless temp. measuring of wafer being processed - using quartz glass or material to absorb optical radiation components between radiation source and semiconductor wafer |
| DE4012615C2 (en) * | 1990-04-20 | 1992-07-16 | A.S.T. Elektronik Gmbh, 7900 Ulm, De | |
| US5114242A (en) * | 1990-12-07 | 1992-05-19 | Ag Processing Technologies, Inc. | Bichannel radiation detection method |
| US5165796A (en) * | 1990-12-07 | 1992-11-24 | Ag Processing Technologies, Inc. | Bichannel radiation detection apparatus |
| US5359693A (en) * | 1991-07-15 | 1994-10-25 | Ast Elektronik Gmbh | Method and apparatus for a rapid thermal processing of delicate components |
| US5180226A (en) * | 1991-10-30 | 1993-01-19 | Texas Instruments Incorporated | Method and apparatus for precise temperature measurement |
| US5226732A (en) * | 1992-04-17 | 1993-07-13 | International Business Machines Corporation | Emissivity independent temperature measurement systems |
| US5770097A (en) * | 1994-12-23 | 1998-06-23 | International Business Machines Corporation | Control of etch selectivity |
| US5683538A (en) * | 1994-12-23 | 1997-11-04 | International Business Machines Corporation | Control of etch selectivity |
| US6072160A (en) * | 1996-06-03 | 2000-06-06 | Applied Materials, Inc. | Method and apparatus for enhancing the efficiency of radiant energy sources used in rapid thermal processing of substrates by energy reflection |
| US7275861B2 (en) | 2005-01-31 | 2007-10-02 | Veeco Instruments Inc. | Calibration wafer and method of calibrating in situ temperatures |
| US7452125B2 (en) | 2005-01-31 | 2008-11-18 | Veeco Instruments Inc. | Calibration wafer and method of calibrating in situ temperatures |
| CN102313599A (en) * | 2010-06-29 | 2012-01-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Device and method for measuring temperature of coupling window, and plasma equipment |
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