WO2004015157A2 - Procedes et appareil permettant un controle in situ de la temperature d'un substrat par l'emission d'un rayonnement electromagnetique - Google Patents

Procedes et appareil permettant un controle in situ de la temperature d'un substrat par l'emission d'un rayonnement electromagnetique Download PDF

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Publication number
WO2004015157A2
WO2004015157A2 PCT/US2003/025524 US0325524W WO2004015157A2 WO 2004015157 A2 WO2004015157 A2 WO 2004015157A2 US 0325524 W US0325524 W US 0325524W WO 2004015157 A2 WO2004015157 A2 WO 2004015157A2
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WIPO (PCT)
Prior art keywords
substrate
electromagnetic
plasma
processing system
radiation
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PCT/US2003/025524
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English (en)
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WO2004015157A3 (fr
Inventor
Enrico Magni
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Lam Research Corporation
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Filing date
Publication date
Application filed by Lam Research Corporation filed Critical Lam Research Corporation
Priority to JP2004528142A priority Critical patent/JP4980568B2/ja
Priority to CN038194287A priority patent/CN1675406B/zh
Priority to AU2003262685A priority patent/AU2003262685A1/en
Publication of WO2004015157A2 publication Critical patent/WO2004015157A2/fr
Publication of WO2004015157A3 publication Critical patent/WO2004015157A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/60—Radiation pyrometry, e.g. infrared or optical thermometry using determination of colour temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature

Definitions

  • the present invention relates in general to substrate manufacturing technologies and in particular to methods and apparatus for in situ wafer temperature monitoring by electromagnetic radiation emission.
  • a substrate e.g., a semiconductor wafer or a glass panel such as one used in flat panel display manufacturing
  • plasma is often employed.
  • the substrate is divided into a plurality of dies, or rectangular areas, each of which will become an integrated circuit.
  • the substrate is then processed in a series of steps in which materials are selectively removed (etching) and deposited (deposition) in order to form electrical components thereon.
  • etching reactive vapor deposition
  • deposition physical vapor deposition
  • a substrate is coated with a thin film of hardened emulsion (i.e., such as a photoresist mask) prior to etching.
  • etchant source gases e.g., C 4 F 8 , C 4 F 6 , CHF 3 , CH 2 F 3 , CF 4 , CH 3 F, C 2 F 4 , N 2 , O 2 , Ar, Xe, He, H 2 , NH 3 , SF 6 , BF 3 , Cl 2; etc.
  • etchant source gases e.g., C 4 F 8 , C 4 F 6 , CHF 3 , CH 2 F 3 , CF 4 , CH 3 F, C 2 F 4 , N 2 , O 2 , Ar, Xe, He, H 2 , NH 3 , SF 6 , BF 3 , Cl 2; etc.
  • gas composition gas phase
  • gas flow gas pressure
  • RF power density voltage
  • magnetic field strength wafer temperature
  • Substrate temperature is important since it may subsequently affects plasma selectivity by changing the deposition rate of polymeric films, such as poly- fluorocarbon on the wafer surface. Careful monitoring may minimize variation, allow a wider process window for other parameters, and improve process control. However, in practice it may be difficult to directly determine temperature without affecting the plasma process.
  • One technique measures the substrate temperature by a temperature probe. Referring now to FIG. 1A, a simplified cross-sectional view of a plasma processing system is shown, in which a temperature probe is used to determine wafer temperature.
  • an appropriate set of etchant source gases is flowed into chamber 100 and struck to form a plasma 102, in order to etch exposed areas of substrate 104, such as a semiconductor wafer or a glass pane.
  • substrate 104 such as a semiconductor wafer or a glass pane.
  • Substrate 104 generally sits on chuck 106.
  • Electromagnetic radiation produced by plasma 102 in combination kinetic energy transferred by the plasma itself, causes substrate 104 to absorb thermal energy.
  • probe 108 extends from beneath substrate 104 to contact the substrate. However, probe 108 may also dislodge the wafer from the chuck, and subsequently ruin a costly wafer.
  • IR radiation Infrared
  • heated materials emit electromagnetic radiation in the IR region.
  • This region generally comprises a wavelength range from 8 to 14 ⁇ m, or a frequency range from 400 to 4000cm-l, where cm-1 is known as wavenumber (1 /wavelength) and is equivalent to frequency.
  • Measured IR radiance can then be used to calculate substrate temperature by using Plank's radiation law for blackbody radiation.
  • FIG. IB a simplified cross-sectional view of a plasma processing system is shown, in which a conventional pyrometer is used to determine wafer temperature.
  • a plasma processing system is shown, in which a conventional pyrometer is used to determine wafer temperature.
  • an appropriate set of etchant source gases is flowed into chamber 100 and struck to form a plasma 102, to etch exposed areas of substrate 104.
  • Substrate 104 generally sits on a chuck 106.
  • Plasma 102 may also produce a spectrum of electromagnetic radiation, some of which is generally IR. It is this radiation (along with kinetic energy transferred by the plasma itself) that may cause substrate 104 to absorb thermal energy.
  • Substrate 104 in turn, also generates IR radiation corresponding to its temperature.
  • an interferometer measures a physical displacement by sensing a phase difference of an electromagnetic beam reflected between two surfaces.
  • an electromagnetic beam may be transmitted at a frequency for which the substrate is translucent, and positioned at an angle beneath the substrate. A first portion of the beam may then reflect on the substrate's bottom surface, while the remaining portion of the beam may reflect on the substrate's top surface.
  • FIG. 1C a simplified cross-sectional view of a plasma processing system is shown, in which an interferometer is used to determine wafer temperature.
  • an appropriate set of etchant source gases is flowed into chamber 100 and struck to form a plasma 102, to etch exposed areas of substrate 104, such as a semiconductor wafer or a glass pane.
  • substrate 104 such as a semiconductor wafer or a glass pane.
  • Substrate 104 generally sits on chuck 106.
  • Plasma 102 produces electromagnetic radiation, some of which is IR. This radiation (along with kinetic energy transferred by the plasma itself), causes substrate 104 to absorb thermal energy and expand by an amount 118.
  • An electromagnetic beam transmitter 108 such as a laser, transmits beam 112 at a frequency for which substrate 104 is translucent.
  • a portion of the beam reflects then reflects 114 at point 124 on the substrate's bottom surface, while the remaining portion of beam 116 reflects at point 122 on the substrate's top surface. Since the same beam 112 is reflected at two points 122 and 124, the resulting beams 114 and 116 may be out of phase, but otherwise identical.
  • Interferometer 130 can then measure the phase shift and determine the substrate thickness 118. By taking successive measures, a change in substrate thickness may be determined. However, a change to substrate thickness may only be used determine a corresponding change in temperature, and not a specific temperature. Furthermore, since the transmitter is also located in the plasma processing system, it can become damaged by plasma 102, and may also produce contaminants that may affect manufacturing yield.
  • substrate temperature is normally inferred from the rate of heat dissipation from the plasma processing system.
  • some type of cooling system is coupled to the chuck in order to achieve thermal equilibrium once the plasma is ignited. That is, although substrate temperature in generally stabilized within a range, its exact value is commonly unknown.
  • the cooling system itself is usually comprised of a chiller that pumps a coolant through cavities in within the chuck, and helium gas pumped between the chuck and the wafer. In addition to removing the generated heat, the helium gas also allows the cooling system to rapidly calibrate heat dissipation. That is, increasing helium pressure subsequently also increases the heat transfer rate.
  • FIG. ID a simplified diagram of temperature versus time is shown for a substrate, after the plasma is ignited.
  • the substrate is at ambient temperature 406.
  • the substrate absorbs thermal energy during a stabilization period 408.
  • the substrate temperature stabilizes at 410. Since the duration of stabilization period 408 may be a substantial portion of the total plasma processing step, decreasing stabilization period 408 may directly improve yield. If the substrate temperature could be directly measured in a plasma processing system, the cooling system could be optimized to minimize stabilization period 408.
  • substrate temperature may directly affect the plasma process, first measuring and then adjusting the substrate temperature would allow plasma processing steps to be better optimized.
  • the physical structure of the plasma processing chamber itself, may change.
  • pollutants may be cleaned from the plasma processing system by striking the plasma without the substrate.
  • the chuck is no longer shielded by the substrate, and is subsequently etched.
  • the substrate's surface roughness increases, modifying its heat transfer efficiency.
  • the cooling system cannot adequately compensate, and the recipe's parameters are invalidated.
  • the chuck is generally replaced after a certain amount of operational hours, which in practice is normally only a fraction of its useful life. This can both increase productions costs, since an expensive chuck may be needless replaced, and reduces yield, since the plasma processing system must be taken offline for several hours to replace the chuck.
  • recipe parameters may need to be adjusted since an otherwise identical piece of fabrication equipment may be installed at a different time, or is used to a different degree, its maintenance cycle does not necessarily match that of the others.
  • the recipe parameters may need to be adjusted when moving the process to a newer version of the plasma processing system, or when transferring the process to a plasma processing system that can process a larger substrate size (e.g., 200mm to 300mm).
  • it would be beneficial to maintain the same recipe parameters e.g., chemistry, power, and temperature.
  • wafer temperature is inferred and not measured, the process may need to be substantially adjusted through trial and error in order to achieve a similar production profile.
  • the invention relates, in one embodiment, to a method in a plasma processing system of determining the temperature of a substrate.
  • the method includes providing a substrate comprising a set of materials, wherein the substrate being configured to absorb electromagnetic radiation comprising a first set of electromagnetic frequencies, to convert the first set of electromagnetic frequencies to a set of thermal vibrations, and to transmit a second set of electromagnetic frequencies.
  • the method also includes positioning the substrate on a substrate support structure, wherein the substrate support structure includes a chuck; flowing an etchant gas mixture into a plasma reactor of the plasma processing system; and striking the etchant gas mixture to create a plasma, wherein the plasma comprises the first set of electromagnetic frequencies.
  • the method further includes processing the substrate with the plasma thereby generating the second set of electromagnetic frequencies; calculating a magnitude of the second set of electromagnetic frequencies; and converting the magnitude to a temperature value.
  • the invention relates, in another embodiment, to an apparatus for determining temperature in a plasma processing system.
  • the apparatus includes a substrate comprising a set of materials, wherein the substrate is configured to absorb electromagnetic radiation comprising a first set of electromagnetic frequencies, to convert the first set of electromagnetic frequencies to a set of thermal vibrations, and to transmit a second set of electromagnetic frequencies.
  • the apparatus also includes a substrate support structure, wherein the substrate support structure includes a chuck, and the substrate is positioned on the substrate support structure; a means of flowing an etchant gas mixture into a plasma reactor of the plasma processing system; and a means of striking the etchant gas mixture to create a plasma, wherein the plasma comprises the first set of electromagnetic frequencies.
  • the apparatus further includes a means of processing the substrate with the plasma thereby generating the second set of electromagnetic frequencies; a means of calculating a magnitude of the second set of electromagnetic frequencies; and a means of converting said magnitude to a temperature value
  • FIG. 1 A depicts a simplified cross-sectional view of a plasma processing system in which a temperature probe is used to determine wafer temperature
  • FIG. IB depicts a simplified cross-sectional view of a plasma processing system in which a conventional pyrometer is used to determine wafer temperature
  • FIG. 1C depicts a simplified cross-sectional view of a plasma processing system in which an interferometer is used to determine wafer temperature
  • FIG. ID depicts a simplified diagram of temperature versus time for a substrate, after the plasma is igmted;
  • FIG. 2 A depicts a simplified diagram of a process in which a phonon is shown, according to one embodiment of the invention
  • FIG. 2B depicts a simplified diagram of a process in which a substrate temperature is measured, according to one embodiment of the invention
  • FIG. 2C depicts a more detailed diagram of FIG. 2B, according to one embodiment of the invention.
  • FIGS. 3A-E depict the measurement of phonons for substrate in a plasma processing system, according to one embodiment of the invention.
  • phonons can be used for in situ wafer temperature monitoring.
  • phonons are thermal energy vibrations in a substrate, which, in turn, generate electromagnetic waves.
  • Discrete bonded materials within the substrate generally radiate electromagnetic radiation at a frequency unique to the material, and with a magnitude correlated to the total amount of absorbed thermal energy in the substrate.
  • the temperature of the substrate can be calculated in a substantially accurate manner. In one embodiment, this calculation can be accomplished using Plank's radiation law for blackbody radiation, corrected by the substrate's specific emissivity.
  • a number of frequencies may be used, preferably in the IR and far-IR regions.
  • the frequency selected should substantially correspond to a region of the spectrum where substrate material has a strong absorption coefficient.
  • a large number of spectral regions may be used. Most favorable phonons are in the region between 6 Dm and 50 Dm.
  • a measurable radiation may be produced by Si-Si vibrations at 16.4 ⁇ m.
  • the monitored phonon may be produced by the Si-O-Si vibration at 9.1 ⁇ m, where interstitial oxygen participates to the atomic motion..
  • Other spectral regions may be used, taking advantage of the rich Si-Si, Si-O, and Si-C (substitutional carbon) vibrational spectrum.
  • FIG. 2 A a simplified diagram of a process in which a phonon is shown, according to one embodiment of the invention.
  • a plasma 201 is struck producing electromagnetic radiation 202 across the entire spectrum from the X-ray region to the microwave region. Most of this radiation 202a passes through the substrate without effect. This is the transmitted light. Examples are the X-rays, most of the infrared spectrum. A second portion of this radiation 202bis partially absorbed by substrate 206 and partially transmitted 212. Examples are light in the near infrared and in the infrared proper, at frequencies for which the substrate has a low absorbance or extinction coefficient. The portion that is absorbed is substantially converted to thermal energy.
  • the remaining portion 202c is substantially absorbed in its entirety and converted to thermal energy.
  • the aggregate thermal energy causes phonons 210 in materials bonded within the substrate's lattice structure, which subsequently cause radiation 214 to be produced at a specific measurable frequency.
  • FIG. 2B a simplified diagram of a process in which a substrate temperature is measured, according to one embodiment of the invention.
  • a plasma 201 is struck in a plasma processing system producing electromagnetic radiation 202.
  • the portion of the electromagnetic radiation that is absorbed is substantially converted to thermal energy.
  • the detector 212 consists of 1) a device capable of discriminating the emitted electromagnetic radiation according to its frequency (or wavelength), and 2) a device capable of measuring the electromagnetic radiation intensity at the frequency (or wavelength) selected by device 1).
  • detector 212 may have an optical dispersing element as monochromator (e.g. multilayer dielectric interference filter, prism, grating, Fabry- Perot interferometer) that is optimized to transmit radiation intensity for the band of the electromagnetic spectrum corresponding to the selected material.
  • a suitable band filter is used to select the radiation of interest.
  • Any photosensitive device capable of measuring the radiation intensity selected by the monochromator may be used in the detector. Examples are thermal detectors (thermopile) photoconductive and photovoltaic detectors.
  • FIG. 2C a more detailed diagram of FIG. 2B is shown, according to one embodiment of the invention.
  • a plasma 201 is struck in plasma processing system 200 producing electromagnetic radiation 202.
  • the portion of the electromagnetic radiation that is absorbed is substantially converted to thermal energy, which subsequently causes phonons to be created within substrate 206.
  • the temperature of substrate 206 can be calculated.
  • Plasma processing system 200 further may include some type of cooling system is coupled to the chuck in order to achieve thermal equilibrium.
  • This cooling system is usually comprised of a chiller that pumps a coolant through cavities in within the chuck, and helium gas pumped between the chuck and the wafer.
  • the helium gas also allows the cooling system to rapidly calibrate heat dissipation. That is, increasing helium pressure subsequently also increases the heat transfer rate.
  • substrate 206 temperature can be maintained in a substantially stable manner during plasma processing by adjusting the temperature setting of the chiller 220 and the pressure of helium 220.
  • helium 220 pressure can be increased to compensate, thereby substantially maintaining substrate temperature. This may allow the chuck to be used for a substantially longer period of time, decreasing chuck replacement costs.
  • yield may further be maintained or improved, since plasma processing system 200 can be operated for a longer duration before maintenance is required.
  • a specific plasma processing step can be optimized for a narrow substrate temperature band, as opposed to being sub-optimized to a broad substrate temperature window.
  • process steps can be more easily interchanged since residual process heat from a previous step can be rapidly attenuated.
  • FIGS. 3A-E the measurement of phonons for substrate in an ExelanTM HPT plasma processing system is shown, according to one embodiment of the invention.
  • the Exelan HPT plasma processing system is shown, other plasma processing systems can be used as well.
  • the etch process is conducted under the following process conditions: Pressure: 50mT
  • Plasma Composition Ar: 270 seem; C 4 F 8 : 25 seem; O : 10 seem
  • FIG. 3 A a simplified diagram of signal intensity versus time within a plasma processing system is shown, according to one embodiment of the invention. No substrate is present during the execution of this test.
  • the chamber walls absorb thermal energy over time 316 generating photons.
  • the resulting electromagnetic radiation is being measured for Si-Si at 16.4 ⁇ m.
  • radiation produced by Si-O-Si would also produce a substantially similar diagram at 9.1 ⁇ m. This figure shows that the electromagnetic radiation increases in intensity as the plasma chamber walls become hotter and hotter by action of the plasma.
  • the plasma is turned off at 320, the corresponding signal intensity also is reduced, since the chamber walls begin to cool.
  • FIG. 3B a simplified diagram of wavenumber versus absorbance within a plasma processing system is shown, according to one embodiment of the invention.
  • Three graphs are shown.
  • Graph 324 displays substrate absorbance for a substrate at 20C.
  • Graph 326 displays substrate absorbance for a substrate at 70C.
  • graph 328 displays substrate absorbance for a substrate at 90C. In general, the higher the substrate temperature, the more negative the corresponding absorbance becomes.
  • FIG. 3C a simplified diagram of wavelength versus absorbance within a plasma processing system is shown for two temperature ranges, according to one embodiment of the invention.
  • the substrates temperature is such that the amount of radiation emitted by the substrate is similar to the amount absorbed, and hence there are no apparent peaks.
  • two absorbance peaks again become apparent, a first peak 330 at 16.4 ⁇ m produced by Si-Si, and a second peak 332 at 9.1 ⁇ m produced by Si-O-Si.
  • FIG. 3D a simplified diagram of signal intensity versus temperature within a plasma processing system is shown, according to one embodiment of the invention.
  • FIG. 3E a simplified diagram of absorbance versus temperature within a plasma processing system is shown for two measured wavelengths, according to one embodiment of the invention.
  • a first graph 330 is shown for Si-Si at 16.4 ⁇ m produced, and a second graph 332 is shown for Si-O-Si at 9.1 ⁇ m.
  • the temperature 307 increases, the corresponding absorbance 305 decreases in a substantially linear fashion.
  • Advantages of the invention include measuring the temperature of a substrate it situ in a plasma processing system. Additional advantages may include optimizing the replacement of plasma processing structures, such as the chuck, increasing the yield of the plasma processing process itself, and facilitating the determination and transfer of a recipe from a first plasma processing system to a second plasma processing system.

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Abstract

La présente invention concerne un système de traitement au plasma permettant de déterminer la température d'un substrat. Le procédé de l'invention consiste à former un substrat comprenant un ensemble de matériaux, le substrat étant configuré pour absorber un rayonnement électromagnétique comprenant un premier ensemble de fréquences électromagnétiques, pour convertir le premier ensemble de fréquences électromagnétiques en un ensemble de vibrations thermiques, et pour transmettre un second ensemble de fréquences électromagnétiques. Le procédé consiste également à placer le substrat sur une structure de support de substrat, la structure de support de substrat comprenant une plaque support ; à faire circuler un mélange de gaz d'attaque chimique dans un réacteur à plasma du système de traitement au plasma ; et à amorcer le mélange de gaz d'attaque chimique afin de créer un plasma, le plasma comprenant le premier ensemble de fréquences électromagnétiques. Le procédé consiste en outre à traiter le substrat avec le plasma, produisant de la sorte le second ensemble de fréquences électromagnétiques ; à calculer l'amplitude du second ensemble de fréquences électromagnétiques ; et à convertir l'amplitude en une valeur de température.
PCT/US2003/025524 2002-08-13 2003-08-13 Procedes et appareil permettant un controle in situ de la temperature d'un substrat par l'emission d'un rayonnement electromagnetique WO2004015157A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004528142A JP4980568B2 (ja) 2002-08-13 2003-08-13 放出電磁放射により基板の温度をその場でモニタリングする方法および装置
CN038194287A CN1675406B (zh) 2002-08-13 2003-08-13 通过电磁射线发射进行原位衬底温度监控的方法和装置
AU2003262685A AU2003262685A1 (en) 2002-08-13 2003-08-13 Methods and apparatus for in situ substrate temperature monitoring by electromagnetic radiation emission

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US40297802P 2002-08-13 2002-08-13
US60/402,978 2002-08-13

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WO2004015157A2 true WO2004015157A2 (fr) 2004-02-19
WO2004015157A3 WO2004015157A3 (fr) 2004-04-01

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JP (1) JP4980568B2 (fr)
KR (1) KR20050050079A (fr)
CN (1) CN1675406B (fr)
AU (1) AU2003262685A1 (fr)
TW (1) TWI320951B (fr)
WO (1) WO2004015157A2 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007134601A (ja) * 2005-11-11 2007-05-31 Horiba Ltd シリコンウエハの温度測定方法及び温度測定用放射温度計
DE102006009460A1 (de) * 2006-03-01 2007-09-06 Infineon Technologies Ag Prozessgerät und Verfahren zur Bestimmung der Temperatur eines Substrats in dem Prozessgerät
CN105841844A (zh) * 2016-03-24 2016-08-10 中国科学院上海微系统与信息技术研究所 一种分子束外延中标定衬底表面实际温度的方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7341673B2 (en) 2003-08-12 2008-03-11 Lam Research Corporation Methods and apparatus for in situ substrate temperature monitoring by electromagnetic radiation emission
US7651269B2 (en) * 2007-07-19 2010-01-26 Lam Research Corporation Temperature probes having a thermally isolated tip
CN102313599B (zh) * 2010-06-29 2013-04-24 北京北方微电子基地设备工艺研究中心有限责任公司 耦合窗的温度测量装置、等离子体设备及温度测量方法
US10373794B2 (en) * 2015-10-29 2019-08-06 Lam Research Corporation Systems and methods for filtering radio frequencies from a signal of a thermocouple and controlling a temperature of an electrode in a plasma chamber
CN109280899A (zh) * 2018-11-27 2019-01-29 上海卫星装备研究所 一种真空镀膜过程中基体温升的表征方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4959244A (en) * 1989-03-27 1990-09-25 General Electric Company Temperature measurement and control for photohermal processes
EP0685720A1 (fr) * 1994-06-03 1995-12-06 Land Instruments International Limited Surveillance de température
US5549756A (en) * 1994-02-02 1996-08-27 Applied Materials, Inc. Optical pyrometer for a thin film deposition system
US5564830A (en) * 1993-06-03 1996-10-15 Fraunhofer Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Method and arrangement for determining the layer-thickness and the substrate temperature during coating
EP1124255A2 (fr) * 1999-04-05 2001-08-16 Applied Materials, Inc. Procédé de gravure dans la fabrication de dispositifs électroniques
US6328802B1 (en) * 1999-09-14 2001-12-11 Lsi Logic Corporation Method and apparatus for determining temperature of a semiconductor wafer during fabrication thereof
US6352870B1 (en) * 2000-06-12 2002-03-05 Advanced Micro Devices, Inc. Method of endpointing plasma strip process by measuring wafer temperature

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03250642A (ja) * 1989-12-06 1991-11-08 Hitachi Ltd 赤外線温度計測装置
JP3093239B2 (ja) * 1990-05-22 2000-10-03 東京エレクトロン株式会社 半導体ウェハの熱処理装置及び熱処理方法
JPH0493730A (ja) * 1990-08-09 1992-03-26 Sharp Corp 温度測定装置
JPH0691144B2 (ja) * 1990-09-21 1994-11-14 株式会社日立製作所 ウエハ温度測定用の放射温度計およびウエハ温度測定方法
JP2001093882A (ja) * 1999-09-22 2001-04-06 Ulvac Japan Ltd 温度測定装置、及びその温度測定装置が設けられた真空処理装置
JP2001153728A (ja) * 1999-11-30 2001-06-08 Toppan Printing Co Ltd フィルムの温度測定方法及びその測定系を搭載した成膜装置及び成膜方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4959244A (en) * 1989-03-27 1990-09-25 General Electric Company Temperature measurement and control for photohermal processes
US5564830A (en) * 1993-06-03 1996-10-15 Fraunhofer Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Method and arrangement for determining the layer-thickness and the substrate temperature during coating
US5549756A (en) * 1994-02-02 1996-08-27 Applied Materials, Inc. Optical pyrometer for a thin film deposition system
EP0685720A1 (fr) * 1994-06-03 1995-12-06 Land Instruments International Limited Surveillance de température
EP1124255A2 (fr) * 1999-04-05 2001-08-16 Applied Materials, Inc. Procédé de gravure dans la fabrication de dispositifs électroniques
US6328802B1 (en) * 1999-09-14 2001-12-11 Lsi Logic Corporation Method and apparatus for determining temperature of a semiconductor wafer during fabrication thereof
US6352870B1 (en) * 2000-06-12 2002-03-05 Advanced Micro Devices, Inc. Method of endpointing plasma strip process by measuring wafer temperature

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
MULLER R: "CONTROL OF A REACTIVE ION ETCHING PROCESS FOR INP AND RELATED MATERIALS BY IN SITU ELLIPSOMETRY IN THE NEAR INFRA RED" PROCEEDINGS OF THE INDIUM PHOSPHIDE AND RELATED MATERIALS CONFERENCE. DENVER, APR. 23 - 25, 1990, NEW YORK, IEEE, US, vol. 1 CONF. 2, 23 April 1990 (1990-04-23), pages 211-214, XP000170222 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007134601A (ja) * 2005-11-11 2007-05-31 Horiba Ltd シリコンウエハの温度測定方法及び温度測定用放射温度計
DE102006009460A1 (de) * 2006-03-01 2007-09-06 Infineon Technologies Ag Prozessgerät und Verfahren zur Bestimmung der Temperatur eines Substrats in dem Prozessgerät
CN105841844A (zh) * 2016-03-24 2016-08-10 中国科学院上海微系统与信息技术研究所 一种分子束外延中标定衬底表面实际温度的方法

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WO2004015157A3 (fr) 2004-04-01
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JP2005536049A (ja) 2005-11-24
TWI320951B (en) 2010-02-21
JP4980568B2 (ja) 2012-07-18
TW200407999A (en) 2004-05-16
AU2003262685A8 (en) 2004-02-25
AU2003262685A1 (en) 2004-02-25
CN1675406B (zh) 2010-05-12

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