WO2004015157A2 - Procedes et appareil permettant un controle in situ de la temperature d'un substrat par l'emission d'un rayonnement electromagnetique - Google Patents
Procedes et appareil permettant un controle in situ de la temperature d'un substrat par l'emission d'un rayonnement electromagnetique Download PDFInfo
- Publication number
- WO2004015157A2 WO2004015157A2 PCT/US2003/025524 US0325524W WO2004015157A2 WO 2004015157 A2 WO2004015157 A2 WO 2004015157A2 US 0325524 W US0325524 W US 0325524W WO 2004015157 A2 WO2004015157 A2 WO 2004015157A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- electromagnetic
- plasma
- processing system
- radiation
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 137
- 238000000034 method Methods 0.000 title claims abstract description 48
- 230000005670 electromagnetic radiation Effects 0.000 title claims abstract description 28
- 238000012544 monitoring process Methods 0.000 title description 6
- 238000011065 in-situ storage Methods 0.000 title description 4
- 238000012545 processing Methods 0.000 claims abstract description 68
- 239000000463 material Substances 0.000 claims abstract description 15
- 239000000203 mixture Substances 0.000 claims abstract description 12
- 230000005855 radiation Effects 0.000 claims description 26
- 238000002329 infrared spectrum Methods 0.000 claims description 5
- 230000005457 Black-body radiation Effects 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 3
- 230000008569 process Effects 0.000 description 20
- 239000007789 gas Substances 0.000 description 16
- 238000010586 diagram Methods 0.000 description 14
- 238000002835 absorbance Methods 0.000 description 13
- 230000000875 corresponding effect Effects 0.000 description 9
- 229910052734 helium Inorganic materials 0.000 description 9
- 238000001816 cooling Methods 0.000 description 8
- 239000001307 helium Substances 0.000 description 8
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 8
- 229910008045 Si-Si Inorganic materials 0.000 description 7
- 229910006411 Si—Si Inorganic materials 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 229910002808 Si–O–Si Inorganic materials 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 239000000523 sample Substances 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 230000006641 stabilisation Effects 0.000 description 4
- 238000011105 stabilization Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000839 emulsion Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- -1 CH2F3 Chemical compound 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000001413 far-infrared spectroscopy Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001845 vibrational spectrum Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/60—Radiation pyrometry, e.g. infrared or optical thermometry using determination of colour temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2001—Maintaining constant desired temperature
Definitions
- the present invention relates in general to substrate manufacturing technologies and in particular to methods and apparatus for in situ wafer temperature monitoring by electromagnetic radiation emission.
- a substrate e.g., a semiconductor wafer or a glass panel such as one used in flat panel display manufacturing
- plasma is often employed.
- the substrate is divided into a plurality of dies, or rectangular areas, each of which will become an integrated circuit.
- the substrate is then processed in a series of steps in which materials are selectively removed (etching) and deposited (deposition) in order to form electrical components thereon.
- etching reactive vapor deposition
- deposition physical vapor deposition
- a substrate is coated with a thin film of hardened emulsion (i.e., such as a photoresist mask) prior to etching.
- etchant source gases e.g., C 4 F 8 , C 4 F 6 , CHF 3 , CH 2 F 3 , CF 4 , CH 3 F, C 2 F 4 , N 2 , O 2 , Ar, Xe, He, H 2 , NH 3 , SF 6 , BF 3 , Cl 2; etc.
- etchant source gases e.g., C 4 F 8 , C 4 F 6 , CHF 3 , CH 2 F 3 , CF 4 , CH 3 F, C 2 F 4 , N 2 , O 2 , Ar, Xe, He, H 2 , NH 3 , SF 6 , BF 3 , Cl 2; etc.
- gas composition gas phase
- gas flow gas pressure
- RF power density voltage
- magnetic field strength wafer temperature
- Substrate temperature is important since it may subsequently affects plasma selectivity by changing the deposition rate of polymeric films, such as poly- fluorocarbon on the wafer surface. Careful monitoring may minimize variation, allow a wider process window for other parameters, and improve process control. However, in practice it may be difficult to directly determine temperature without affecting the plasma process.
- One technique measures the substrate temperature by a temperature probe. Referring now to FIG. 1A, a simplified cross-sectional view of a plasma processing system is shown, in which a temperature probe is used to determine wafer temperature.
- an appropriate set of etchant source gases is flowed into chamber 100 and struck to form a plasma 102, in order to etch exposed areas of substrate 104, such as a semiconductor wafer or a glass pane.
- substrate 104 such as a semiconductor wafer or a glass pane.
- Substrate 104 generally sits on chuck 106.
- Electromagnetic radiation produced by plasma 102 in combination kinetic energy transferred by the plasma itself, causes substrate 104 to absorb thermal energy.
- probe 108 extends from beneath substrate 104 to contact the substrate. However, probe 108 may also dislodge the wafer from the chuck, and subsequently ruin a costly wafer.
- IR radiation Infrared
- heated materials emit electromagnetic radiation in the IR region.
- This region generally comprises a wavelength range from 8 to 14 ⁇ m, or a frequency range from 400 to 4000cm-l, where cm-1 is known as wavenumber (1 /wavelength) and is equivalent to frequency.
- Measured IR radiance can then be used to calculate substrate temperature by using Plank's radiation law for blackbody radiation.
- FIG. IB a simplified cross-sectional view of a plasma processing system is shown, in which a conventional pyrometer is used to determine wafer temperature.
- a plasma processing system is shown, in which a conventional pyrometer is used to determine wafer temperature.
- an appropriate set of etchant source gases is flowed into chamber 100 and struck to form a plasma 102, to etch exposed areas of substrate 104.
- Substrate 104 generally sits on a chuck 106.
- Plasma 102 may also produce a spectrum of electromagnetic radiation, some of which is generally IR. It is this radiation (along with kinetic energy transferred by the plasma itself) that may cause substrate 104 to absorb thermal energy.
- Substrate 104 in turn, also generates IR radiation corresponding to its temperature.
- an interferometer measures a physical displacement by sensing a phase difference of an electromagnetic beam reflected between two surfaces.
- an electromagnetic beam may be transmitted at a frequency for which the substrate is translucent, and positioned at an angle beneath the substrate. A first portion of the beam may then reflect on the substrate's bottom surface, while the remaining portion of the beam may reflect on the substrate's top surface.
- FIG. 1C a simplified cross-sectional view of a plasma processing system is shown, in which an interferometer is used to determine wafer temperature.
- an appropriate set of etchant source gases is flowed into chamber 100 and struck to form a plasma 102, to etch exposed areas of substrate 104, such as a semiconductor wafer or a glass pane.
- substrate 104 such as a semiconductor wafer or a glass pane.
- Substrate 104 generally sits on chuck 106.
- Plasma 102 produces electromagnetic radiation, some of which is IR. This radiation (along with kinetic energy transferred by the plasma itself), causes substrate 104 to absorb thermal energy and expand by an amount 118.
- An electromagnetic beam transmitter 108 such as a laser, transmits beam 112 at a frequency for which substrate 104 is translucent.
- a portion of the beam reflects then reflects 114 at point 124 on the substrate's bottom surface, while the remaining portion of beam 116 reflects at point 122 on the substrate's top surface. Since the same beam 112 is reflected at two points 122 and 124, the resulting beams 114 and 116 may be out of phase, but otherwise identical.
- Interferometer 130 can then measure the phase shift and determine the substrate thickness 118. By taking successive measures, a change in substrate thickness may be determined. However, a change to substrate thickness may only be used determine a corresponding change in temperature, and not a specific temperature. Furthermore, since the transmitter is also located in the plasma processing system, it can become damaged by plasma 102, and may also produce contaminants that may affect manufacturing yield.
- substrate temperature is normally inferred from the rate of heat dissipation from the plasma processing system.
- some type of cooling system is coupled to the chuck in order to achieve thermal equilibrium once the plasma is ignited. That is, although substrate temperature in generally stabilized within a range, its exact value is commonly unknown.
- the cooling system itself is usually comprised of a chiller that pumps a coolant through cavities in within the chuck, and helium gas pumped between the chuck and the wafer. In addition to removing the generated heat, the helium gas also allows the cooling system to rapidly calibrate heat dissipation. That is, increasing helium pressure subsequently also increases the heat transfer rate.
- FIG. ID a simplified diagram of temperature versus time is shown for a substrate, after the plasma is ignited.
- the substrate is at ambient temperature 406.
- the substrate absorbs thermal energy during a stabilization period 408.
- the substrate temperature stabilizes at 410. Since the duration of stabilization period 408 may be a substantial portion of the total plasma processing step, decreasing stabilization period 408 may directly improve yield. If the substrate temperature could be directly measured in a plasma processing system, the cooling system could be optimized to minimize stabilization period 408.
- substrate temperature may directly affect the plasma process, first measuring and then adjusting the substrate temperature would allow plasma processing steps to be better optimized.
- the physical structure of the plasma processing chamber itself, may change.
- pollutants may be cleaned from the plasma processing system by striking the plasma without the substrate.
- the chuck is no longer shielded by the substrate, and is subsequently etched.
- the substrate's surface roughness increases, modifying its heat transfer efficiency.
- the cooling system cannot adequately compensate, and the recipe's parameters are invalidated.
- the chuck is generally replaced after a certain amount of operational hours, which in practice is normally only a fraction of its useful life. This can both increase productions costs, since an expensive chuck may be needless replaced, and reduces yield, since the plasma processing system must be taken offline for several hours to replace the chuck.
- recipe parameters may need to be adjusted since an otherwise identical piece of fabrication equipment may be installed at a different time, or is used to a different degree, its maintenance cycle does not necessarily match that of the others.
- the recipe parameters may need to be adjusted when moving the process to a newer version of the plasma processing system, or when transferring the process to a plasma processing system that can process a larger substrate size (e.g., 200mm to 300mm).
- it would be beneficial to maintain the same recipe parameters e.g., chemistry, power, and temperature.
- wafer temperature is inferred and not measured, the process may need to be substantially adjusted through trial and error in order to achieve a similar production profile.
- the invention relates, in one embodiment, to a method in a plasma processing system of determining the temperature of a substrate.
- the method includes providing a substrate comprising a set of materials, wherein the substrate being configured to absorb electromagnetic radiation comprising a first set of electromagnetic frequencies, to convert the first set of electromagnetic frequencies to a set of thermal vibrations, and to transmit a second set of electromagnetic frequencies.
- the method also includes positioning the substrate on a substrate support structure, wherein the substrate support structure includes a chuck; flowing an etchant gas mixture into a plasma reactor of the plasma processing system; and striking the etchant gas mixture to create a plasma, wherein the plasma comprises the first set of electromagnetic frequencies.
- the method further includes processing the substrate with the plasma thereby generating the second set of electromagnetic frequencies; calculating a magnitude of the second set of electromagnetic frequencies; and converting the magnitude to a temperature value.
- the invention relates, in another embodiment, to an apparatus for determining temperature in a plasma processing system.
- the apparatus includes a substrate comprising a set of materials, wherein the substrate is configured to absorb electromagnetic radiation comprising a first set of electromagnetic frequencies, to convert the first set of electromagnetic frequencies to a set of thermal vibrations, and to transmit a second set of electromagnetic frequencies.
- the apparatus also includes a substrate support structure, wherein the substrate support structure includes a chuck, and the substrate is positioned on the substrate support structure; a means of flowing an etchant gas mixture into a plasma reactor of the plasma processing system; and a means of striking the etchant gas mixture to create a plasma, wherein the plasma comprises the first set of electromagnetic frequencies.
- the apparatus further includes a means of processing the substrate with the plasma thereby generating the second set of electromagnetic frequencies; a means of calculating a magnitude of the second set of electromagnetic frequencies; and a means of converting said magnitude to a temperature value
- FIG. 1 A depicts a simplified cross-sectional view of a plasma processing system in which a temperature probe is used to determine wafer temperature
- FIG. IB depicts a simplified cross-sectional view of a plasma processing system in which a conventional pyrometer is used to determine wafer temperature
- FIG. 1C depicts a simplified cross-sectional view of a plasma processing system in which an interferometer is used to determine wafer temperature
- FIG. ID depicts a simplified diagram of temperature versus time for a substrate, after the plasma is igmted;
- FIG. 2 A depicts a simplified diagram of a process in which a phonon is shown, according to one embodiment of the invention
- FIG. 2B depicts a simplified diagram of a process in which a substrate temperature is measured, according to one embodiment of the invention
- FIG. 2C depicts a more detailed diagram of FIG. 2B, according to one embodiment of the invention.
- FIGS. 3A-E depict the measurement of phonons for substrate in a plasma processing system, according to one embodiment of the invention.
- phonons can be used for in situ wafer temperature monitoring.
- phonons are thermal energy vibrations in a substrate, which, in turn, generate electromagnetic waves.
- Discrete bonded materials within the substrate generally radiate electromagnetic radiation at a frequency unique to the material, and with a magnitude correlated to the total amount of absorbed thermal energy in the substrate.
- the temperature of the substrate can be calculated in a substantially accurate manner. In one embodiment, this calculation can be accomplished using Plank's radiation law for blackbody radiation, corrected by the substrate's specific emissivity.
- a number of frequencies may be used, preferably in the IR and far-IR regions.
- the frequency selected should substantially correspond to a region of the spectrum where substrate material has a strong absorption coefficient.
- a large number of spectral regions may be used. Most favorable phonons are in the region between 6 Dm and 50 Dm.
- a measurable radiation may be produced by Si-Si vibrations at 16.4 ⁇ m.
- the monitored phonon may be produced by the Si-O-Si vibration at 9.1 ⁇ m, where interstitial oxygen participates to the atomic motion..
- Other spectral regions may be used, taking advantage of the rich Si-Si, Si-O, and Si-C (substitutional carbon) vibrational spectrum.
- FIG. 2 A a simplified diagram of a process in which a phonon is shown, according to one embodiment of the invention.
- a plasma 201 is struck producing electromagnetic radiation 202 across the entire spectrum from the X-ray region to the microwave region. Most of this radiation 202a passes through the substrate without effect. This is the transmitted light. Examples are the X-rays, most of the infrared spectrum. A second portion of this radiation 202bis partially absorbed by substrate 206 and partially transmitted 212. Examples are light in the near infrared and in the infrared proper, at frequencies for which the substrate has a low absorbance or extinction coefficient. The portion that is absorbed is substantially converted to thermal energy.
- the remaining portion 202c is substantially absorbed in its entirety and converted to thermal energy.
- the aggregate thermal energy causes phonons 210 in materials bonded within the substrate's lattice structure, which subsequently cause radiation 214 to be produced at a specific measurable frequency.
- FIG. 2B a simplified diagram of a process in which a substrate temperature is measured, according to one embodiment of the invention.
- a plasma 201 is struck in a plasma processing system producing electromagnetic radiation 202.
- the portion of the electromagnetic radiation that is absorbed is substantially converted to thermal energy.
- the detector 212 consists of 1) a device capable of discriminating the emitted electromagnetic radiation according to its frequency (or wavelength), and 2) a device capable of measuring the electromagnetic radiation intensity at the frequency (or wavelength) selected by device 1).
- detector 212 may have an optical dispersing element as monochromator (e.g. multilayer dielectric interference filter, prism, grating, Fabry- Perot interferometer) that is optimized to transmit radiation intensity for the band of the electromagnetic spectrum corresponding to the selected material.
- a suitable band filter is used to select the radiation of interest.
- Any photosensitive device capable of measuring the radiation intensity selected by the monochromator may be used in the detector. Examples are thermal detectors (thermopile) photoconductive and photovoltaic detectors.
- FIG. 2C a more detailed diagram of FIG. 2B is shown, according to one embodiment of the invention.
- a plasma 201 is struck in plasma processing system 200 producing electromagnetic radiation 202.
- the portion of the electromagnetic radiation that is absorbed is substantially converted to thermal energy, which subsequently causes phonons to be created within substrate 206.
- the temperature of substrate 206 can be calculated.
- Plasma processing system 200 further may include some type of cooling system is coupled to the chuck in order to achieve thermal equilibrium.
- This cooling system is usually comprised of a chiller that pumps a coolant through cavities in within the chuck, and helium gas pumped between the chuck and the wafer.
- the helium gas also allows the cooling system to rapidly calibrate heat dissipation. That is, increasing helium pressure subsequently also increases the heat transfer rate.
- substrate 206 temperature can be maintained in a substantially stable manner during plasma processing by adjusting the temperature setting of the chiller 220 and the pressure of helium 220.
- helium 220 pressure can be increased to compensate, thereby substantially maintaining substrate temperature. This may allow the chuck to be used for a substantially longer period of time, decreasing chuck replacement costs.
- yield may further be maintained or improved, since plasma processing system 200 can be operated for a longer duration before maintenance is required.
- a specific plasma processing step can be optimized for a narrow substrate temperature band, as opposed to being sub-optimized to a broad substrate temperature window.
- process steps can be more easily interchanged since residual process heat from a previous step can be rapidly attenuated.
- FIGS. 3A-E the measurement of phonons for substrate in an ExelanTM HPT plasma processing system is shown, according to one embodiment of the invention.
- the Exelan HPT plasma processing system is shown, other plasma processing systems can be used as well.
- the etch process is conducted under the following process conditions: Pressure: 50mT
- Plasma Composition Ar: 270 seem; C 4 F 8 : 25 seem; O : 10 seem
- FIG. 3 A a simplified diagram of signal intensity versus time within a plasma processing system is shown, according to one embodiment of the invention. No substrate is present during the execution of this test.
- the chamber walls absorb thermal energy over time 316 generating photons.
- the resulting electromagnetic radiation is being measured for Si-Si at 16.4 ⁇ m.
- radiation produced by Si-O-Si would also produce a substantially similar diagram at 9.1 ⁇ m. This figure shows that the electromagnetic radiation increases in intensity as the plasma chamber walls become hotter and hotter by action of the plasma.
- the plasma is turned off at 320, the corresponding signal intensity also is reduced, since the chamber walls begin to cool.
- FIG. 3B a simplified diagram of wavenumber versus absorbance within a plasma processing system is shown, according to one embodiment of the invention.
- Three graphs are shown.
- Graph 324 displays substrate absorbance for a substrate at 20C.
- Graph 326 displays substrate absorbance for a substrate at 70C.
- graph 328 displays substrate absorbance for a substrate at 90C. In general, the higher the substrate temperature, the more negative the corresponding absorbance becomes.
- FIG. 3C a simplified diagram of wavelength versus absorbance within a plasma processing system is shown for two temperature ranges, according to one embodiment of the invention.
- the substrates temperature is such that the amount of radiation emitted by the substrate is similar to the amount absorbed, and hence there are no apparent peaks.
- two absorbance peaks again become apparent, a first peak 330 at 16.4 ⁇ m produced by Si-Si, and a second peak 332 at 9.1 ⁇ m produced by Si-O-Si.
- FIG. 3D a simplified diagram of signal intensity versus temperature within a plasma processing system is shown, according to one embodiment of the invention.
- FIG. 3E a simplified diagram of absorbance versus temperature within a plasma processing system is shown for two measured wavelengths, according to one embodiment of the invention.
- a first graph 330 is shown for Si-Si at 16.4 ⁇ m produced, and a second graph 332 is shown for Si-O-Si at 9.1 ⁇ m.
- the temperature 307 increases, the corresponding absorbance 305 decreases in a substantially linear fashion.
- Advantages of the invention include measuring the temperature of a substrate it situ in a plasma processing system. Additional advantages may include optimizing the replacement of plasma processing structures, such as the chuck, increasing the yield of the plasma processing process itself, and facilitating the determination and transfer of a recipe from a first plasma processing system to a second plasma processing system.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Radiation Pyrometers (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004528142A JP4980568B2 (ja) | 2002-08-13 | 2003-08-13 | 放出電磁放射により基板の温度をその場でモニタリングする方法および装置 |
CN038194287A CN1675406B (zh) | 2002-08-13 | 2003-08-13 | 通过电磁射线发射进行原位衬底温度监控的方法和装置 |
AU2003262685A AU2003262685A1 (en) | 2002-08-13 | 2003-08-13 | Methods and apparatus for in situ substrate temperature monitoring by electromagnetic radiation emission |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US40297802P | 2002-08-13 | 2002-08-13 | |
US60/402,978 | 2002-08-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2004015157A2 true WO2004015157A2 (fr) | 2004-02-19 |
WO2004015157A3 WO2004015157A3 (fr) | 2004-04-01 |
Family
ID=31715916
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2003/025524 WO2004015157A2 (fr) | 2002-08-13 | 2003-08-13 | Procedes et appareil permettant un controle in situ de la temperature d'un substrat par l'emission d'un rayonnement electromagnetique |
Country Status (6)
Country | Link |
---|---|
JP (1) | JP4980568B2 (fr) |
KR (1) | KR20050050079A (fr) |
CN (1) | CN1675406B (fr) |
AU (1) | AU2003262685A1 (fr) |
TW (1) | TWI320951B (fr) |
WO (1) | WO2004015157A2 (fr) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007134601A (ja) * | 2005-11-11 | 2007-05-31 | Horiba Ltd | シリコンウエハの温度測定方法及び温度測定用放射温度計 |
DE102006009460A1 (de) * | 2006-03-01 | 2007-09-06 | Infineon Technologies Ag | Prozessgerät und Verfahren zur Bestimmung der Temperatur eines Substrats in dem Prozessgerät |
CN105841844A (zh) * | 2016-03-24 | 2016-08-10 | 中国科学院上海微系统与信息技术研究所 | 一种分子束外延中标定衬底表面实际温度的方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7341673B2 (en) | 2003-08-12 | 2008-03-11 | Lam Research Corporation | Methods and apparatus for in situ substrate temperature monitoring by electromagnetic radiation emission |
US7651269B2 (en) * | 2007-07-19 | 2010-01-26 | Lam Research Corporation | Temperature probes having a thermally isolated tip |
CN102313599B (zh) * | 2010-06-29 | 2013-04-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 耦合窗的温度测量装置、等离子体设备及温度测量方法 |
US10373794B2 (en) * | 2015-10-29 | 2019-08-06 | Lam Research Corporation | Systems and methods for filtering radio frequencies from a signal of a thermocouple and controlling a temperature of an electrode in a plasma chamber |
CN109280899A (zh) * | 2018-11-27 | 2019-01-29 | 上海卫星装备研究所 | 一种真空镀膜过程中基体温升的表征方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4959244A (en) * | 1989-03-27 | 1990-09-25 | General Electric Company | Temperature measurement and control for photohermal processes |
EP0685720A1 (fr) * | 1994-06-03 | 1995-12-06 | Land Instruments International Limited | Surveillance de température |
US5549756A (en) * | 1994-02-02 | 1996-08-27 | Applied Materials, Inc. | Optical pyrometer for a thin film deposition system |
US5564830A (en) * | 1993-06-03 | 1996-10-15 | Fraunhofer Gesellschaft Zur Forderung Der Angewandten Forschung E.V. | Method and arrangement for determining the layer-thickness and the substrate temperature during coating |
EP1124255A2 (fr) * | 1999-04-05 | 2001-08-16 | Applied Materials, Inc. | Procédé de gravure dans la fabrication de dispositifs électroniques |
US6328802B1 (en) * | 1999-09-14 | 2001-12-11 | Lsi Logic Corporation | Method and apparatus for determining temperature of a semiconductor wafer during fabrication thereof |
US6352870B1 (en) * | 2000-06-12 | 2002-03-05 | Advanced Micro Devices, Inc. | Method of endpointing plasma strip process by measuring wafer temperature |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03250642A (ja) * | 1989-12-06 | 1991-11-08 | Hitachi Ltd | 赤外線温度計測装置 |
JP3093239B2 (ja) * | 1990-05-22 | 2000-10-03 | 東京エレクトロン株式会社 | 半導体ウェハの熱処理装置及び熱処理方法 |
JPH0493730A (ja) * | 1990-08-09 | 1992-03-26 | Sharp Corp | 温度測定装置 |
JPH0691144B2 (ja) * | 1990-09-21 | 1994-11-14 | 株式会社日立製作所 | ウエハ温度測定用の放射温度計およびウエハ温度測定方法 |
JP2001093882A (ja) * | 1999-09-22 | 2001-04-06 | Ulvac Japan Ltd | 温度測定装置、及びその温度測定装置が設けられた真空処理装置 |
JP2001153728A (ja) * | 1999-11-30 | 2001-06-08 | Toppan Printing Co Ltd | フィルムの温度測定方法及びその測定系を搭載した成膜装置及び成膜方法 |
-
2003
- 2003-08-12 TW TW092122165A patent/TWI320951B/zh not_active IP Right Cessation
- 2003-08-13 KR KR1020057002412A patent/KR20050050079A/ko not_active Application Discontinuation
- 2003-08-13 CN CN038194287A patent/CN1675406B/zh not_active Expired - Fee Related
- 2003-08-13 AU AU2003262685A patent/AU2003262685A1/en not_active Abandoned
- 2003-08-13 WO PCT/US2003/025524 patent/WO2004015157A2/fr active Application Filing
- 2003-08-13 JP JP2004528142A patent/JP4980568B2/ja not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4959244A (en) * | 1989-03-27 | 1990-09-25 | General Electric Company | Temperature measurement and control for photohermal processes |
US5564830A (en) * | 1993-06-03 | 1996-10-15 | Fraunhofer Gesellschaft Zur Forderung Der Angewandten Forschung E.V. | Method and arrangement for determining the layer-thickness and the substrate temperature during coating |
US5549756A (en) * | 1994-02-02 | 1996-08-27 | Applied Materials, Inc. | Optical pyrometer for a thin film deposition system |
EP0685720A1 (fr) * | 1994-06-03 | 1995-12-06 | Land Instruments International Limited | Surveillance de température |
EP1124255A2 (fr) * | 1999-04-05 | 2001-08-16 | Applied Materials, Inc. | Procédé de gravure dans la fabrication de dispositifs électroniques |
US6328802B1 (en) * | 1999-09-14 | 2001-12-11 | Lsi Logic Corporation | Method and apparatus for determining temperature of a semiconductor wafer during fabrication thereof |
US6352870B1 (en) * | 2000-06-12 | 2002-03-05 | Advanced Micro Devices, Inc. | Method of endpointing plasma strip process by measuring wafer temperature |
Non-Patent Citations (1)
Title |
---|
MULLER R: "CONTROL OF A REACTIVE ION ETCHING PROCESS FOR INP AND RELATED MATERIALS BY IN SITU ELLIPSOMETRY IN THE NEAR INFRA RED" PROCEEDINGS OF THE INDIUM PHOSPHIDE AND RELATED MATERIALS CONFERENCE. DENVER, APR. 23 - 25, 1990, NEW YORK, IEEE, US, vol. 1 CONF. 2, 23 April 1990 (1990-04-23), pages 211-214, XP000170222 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007134601A (ja) * | 2005-11-11 | 2007-05-31 | Horiba Ltd | シリコンウエハの温度測定方法及び温度測定用放射温度計 |
DE102006009460A1 (de) * | 2006-03-01 | 2007-09-06 | Infineon Technologies Ag | Prozessgerät und Verfahren zur Bestimmung der Temperatur eines Substrats in dem Prozessgerät |
CN105841844A (zh) * | 2016-03-24 | 2016-08-10 | 中国科学院上海微系统与信息技术研究所 | 一种分子束外延中标定衬底表面实际温度的方法 |
Also Published As
Publication number | Publication date |
---|---|
CN1675406A (zh) | 2005-09-28 |
WO2004015157A3 (fr) | 2004-04-01 |
KR20050050079A (ko) | 2005-05-27 |
JP2005536049A (ja) | 2005-11-24 |
TWI320951B (en) | 2010-02-21 |
JP4980568B2 (ja) | 2012-07-18 |
TW200407999A (en) | 2004-05-16 |
AU2003262685A8 (en) | 2004-02-25 |
AU2003262685A1 (en) | 2004-02-25 |
CN1675406B (zh) | 2010-05-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9945736B2 (en) | Methods and apparatus for in situ substrate temperature monitoring by electromagnetic radiation emission | |
EP1098189B1 (fr) | Méthode de détection du point d'achèvement d'un traitement par plasma en l'absence d'oxygène | |
KR100904110B1 (ko) | 기판 처리를 모니터링하기 위한 신경망 방법들 및 장치들 | |
US8518283B2 (en) | Plasma etching method capable of detecting end point and plasma etching device therefor | |
KR100866656B1 (ko) | 플라즈마 처리 방법 및 플라즈마 처리 장치 | |
KR102586826B1 (ko) | 프로세스 레이트 결정을 위한 방법 및 장치 | |
US20090095421A1 (en) | Etch amount detection method, etching method, and etching system | |
US6976782B1 (en) | Methods and apparatus for in situ substrate temperature monitoring | |
US10249509B2 (en) | Substrate cleaning method and system using atmospheric pressure atomic oxygen | |
WO2004015157A2 (fr) | Procedes et appareil permettant un controle in situ de la temperature d'un substrat par l'emission d'un rayonnement electromagnetique | |
US10892145B2 (en) | Substrate processing apparatus, substrate processing method, and method of fabricating semiconductor device using the same | |
KR100263406B1 (ko) | 플라즈마처리의종점검지방법및장치 | |
JP3195695B2 (ja) | プラズマ処理方法 | |
JPS6358913B2 (fr) | ||
Iwakoshi et al. | Prediction of etching results and etching stabilization by applying principal component regression to emission spectra during in-situ cleaning | |
JP2005303088A (ja) | プラズマ処理装置及びレジストトリミング方法 | |
JP2013115354A (ja) | シミュレーション方法、シミュレーションプログラム、半導体製造装置 | |
JPH05251397A (ja) | 基板温度の測定方法 | |
JPH06208973A (ja) | ドライエッチング装置及びその方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2004528142 Country of ref document: JP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020057002412 Country of ref document: KR |
|
WWE | Wipo information: entry into national phase |
Ref document number: 20038194287 Country of ref document: CN |
|
WWP | Wipo information: published in national office |
Ref document number: 1020057002412 Country of ref document: KR |
|
122 | Ep: pct application non-entry in european phase |