JP4978847B2 - シリコン酸化膜及びその製造方法並びにそれを用いたゲート絶縁膜を有する半導体装置 - Google Patents

シリコン酸化膜及びその製造方法並びにそれを用いたゲート絶縁膜を有する半導体装置 Download PDF

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Publication number
JP4978847B2
JP4978847B2 JP2008136491A JP2008136491A JP4978847B2 JP 4978847 B2 JP4978847 B2 JP 4978847B2 JP 2008136491 A JP2008136491 A JP 2008136491A JP 2008136491 A JP2008136491 A JP 2008136491A JP 4978847 B2 JP4978847 B2 JP 4978847B2
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film
insulating film
gate insulating
semiconductor device
silicon oxide
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Japanese (ja)
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JP2009010354A (ja
JP2009010354A5 (enExample
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茂 森
浩 田邉
淳 田中
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Tianma Japan Ltd
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NLT Technologeies Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes

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  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
JP2008136491A 2007-06-01 2008-05-26 シリコン酸化膜及びその製造方法並びにそれを用いたゲート絶縁膜を有する半導体装置 Active JP4978847B2 (ja)

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JP2008136491A JP4978847B2 (ja) 2007-06-01 2008-05-26 シリコン酸化膜及びその製造方法並びにそれを用いたゲート絶縁膜を有する半導体装置

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JP2007147405 2007-06-01
JP2007147405 2007-06-01
JP2008136491A JP4978847B2 (ja) 2007-06-01 2008-05-26 シリコン酸化膜及びその製造方法並びにそれを用いたゲート絶縁膜を有する半導体装置

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JP2009010354A JP2009010354A (ja) 2009-01-15
JP2009010354A5 JP2009010354A5 (enExample) 2011-01-27
JP4978847B2 true JP4978847B2 (ja) 2012-07-18

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US (1) US8330193B2 (enExample)
JP (1) JP4978847B2 (enExample)
CN (1) CN101315947B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5458367B2 (ja) * 2007-07-09 2014-04-02 Ｎｌｔテクノロジー株式会社 薄膜トランジスタ及びその製造方法
CN105185788A (zh) * 2015-09-01 2015-12-23 武汉华星光电技术有限公司 阵列基板及其制造方法
US10224430B1 (en) * 2017-12-06 2019-03-05 International Business Machines Corporation Thin film transistors with epitaxial source/drain and drain field relief
KR102160552B1 (ko) * 2018-02-28 2020-09-28 최영준 절연막 형성 방법 및 절연막 제조장치
WO2022204852A1 (en) * 2021-03-29 2022-10-06 Yangtze Memory Technologies Co., Ltd. Negative gate stress operation in multi-pass programming and memory device thereof
CN117790297A (zh) * 2024-01-09 2024-03-29 陕西宇腾电子科技有限公司 一种利用h2等离子体制备晶体管电子组件方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3164019B2 (ja) 1997-05-21 2001-05-08 日本電気株式会社 酸化シリコン膜およびその形成方法と成膜装置
US6303523B2 (en) * 1998-02-11 2001-10-16 Applied Materials, Inc. Plasma processes for depositing low dielectric constant films
US6287990B1 (en) * 1998-02-11 2001-09-11 Applied Materials, Inc. CVD plasma assisted low dielectric constant films
JP2000357690A (ja) 1999-06-15 2000-12-26 Matsushita Electric Ind Co Ltd 絶縁膜、その形成方法およびその絶縁膜を用いた半導体装置
JP2001135822A (ja) 1999-11-04 2001-05-18 Matsushita Electric Ind Co Ltd 薄膜トランジスタとその製造方法および液晶表示装置
JP2001230419A (ja) * 2000-02-15 2001-08-24 Hitachi Ltd 液晶表示装置の製造方法及び製造装置及び液晶表示装置
JP2002261285A (ja) * 2001-02-27 2002-09-13 Toshiba Corp 薄膜トランジスタの製造方法
JP2003008027A (ja) * 2001-06-27 2003-01-10 Matsushita Electric Ind Co Ltd 薄膜トランジスタアレイおよびそれを用いた液晶表示装置
US7232714B2 (en) * 2001-11-30 2007-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7547643B2 (en) * 2004-03-31 2009-06-16 Applied Materials, Inc. Techniques promoting adhesion of porous low K film to underlying barrier layer
TW200537573A (en) * 2004-04-23 2005-11-16 Ulvac Inc Thin-film transistor and production method thereof
JP4684866B2 (ja) * 2005-11-17 2011-05-18 ルネサスエレクトロニクス株式会社 半導体装置の製造方法

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CN101315947A (zh) 2008-12-03
US20080296580A1 (en) 2008-12-04
CN101315947B (zh) 2011-06-22
JP2009010354A (ja) 2009-01-15
US8330193B2 (en) 2012-12-11

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