JP4974500B2 - 半導体装置、モジュール及び電子機器 - Google Patents

半導体装置、モジュール及び電子機器 Download PDF

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Publication number
JP4974500B2
JP4974500B2 JP2005268910A JP2005268910A JP4974500B2 JP 4974500 B2 JP4974500 B2 JP 4974500B2 JP 2005268910 A JP2005268910 A JP 2005268910A JP 2005268910 A JP2005268910 A JP 2005268910A JP 4974500 B2 JP4974500 B2 JP 4974500B2
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Prior art keywords
conductive layer
layer
film
electrode
contact
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JP2005268910A
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Japanese (ja)
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JP2006113571A5 (OSRAM
JP2006113571A (ja
Inventor
欣成 檜垣
真之 坂倉
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2005268910A priority Critical patent/JP4974500B2/ja
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Publication of JP2006113571A5 publication Critical patent/JP2006113571A5/ja
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  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
JP2005268910A 2004-09-15 2005-09-15 半導体装置、モジュール及び電子機器 Expired - Lifetime JP4974500B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005268910A JP4974500B2 (ja) 2004-09-15 2005-09-15 半導体装置、モジュール及び電子機器

Applications Claiming Priority (3)

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JP2004267673 2004-09-15
JP2004267673 2004-09-15
JP2005268910A JP4974500B2 (ja) 2004-09-15 2005-09-15 半導体装置、モジュール及び電子機器

Related Child Applications (1)

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JP2012051407A Division JP5427907B2 (ja) 2004-09-15 2012-03-08 半導体装置、モジュール及び電子機器

Publications (3)

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JP2006113571A JP2006113571A (ja) 2006-04-27
JP2006113571A5 JP2006113571A5 (OSRAM) 2008-10-09
JP4974500B2 true JP4974500B2 (ja) 2012-07-11

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JP2005268910A Expired - Lifetime JP4974500B2 (ja) 2004-09-15 2005-09-15 半導体装置、モジュール及び電子機器

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JP (1) JP4974500B2 (OSRAM)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008096748A1 (ja) * 2007-02-07 2008-08-14 Kaneka Corporation 平面発光装置
JP5262069B2 (ja) * 2007-11-01 2013-08-14 カシオ計算機株式会社 電気素子デバイス及び電気素子デバイスの製造方法
US8692455B2 (en) 2007-12-18 2014-04-08 Sony Corporation Display device and method for production thereof
JP4600786B2 (ja) * 2007-12-18 2010-12-15 ソニー株式会社 表示装置およびその製造方法
US7977678B2 (en) * 2007-12-21 2011-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
TWI637444B (zh) 2008-08-08 2018-10-01 半導體能源研究所股份有限公司 半導體裝置的製造方法
US8461582B2 (en) 2009-03-05 2013-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5435260B2 (ja) 2009-04-03 2014-03-05 ソニー株式会社 表示装置およびその製造方法
CN102763202B (zh) * 2010-02-19 2016-08-03 株式会社半导体能源研究所 半导体装置及其制造方法
KR101671038B1 (ko) 2010-09-21 2016-10-31 가부시키가이샤 제이올레드 박막 트랜지스터 어레이 장치, 박막 트랜지스터 어레이 장치의 제조 방법
JP5576862B2 (ja) 2010-09-21 2014-08-20 パナソニック株式会社 薄膜トランジスタアレイ装置、薄膜トランジスタアレイ装置の製造方法
JP5667868B2 (ja) * 2010-12-24 2015-02-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5907697B2 (ja) * 2011-11-09 2016-04-26 三菱電機株式会社 配線構造及びそれを備える薄膜トランジスタアレイ基板並びに表示装置
KR102042483B1 (ko) * 2012-09-24 2019-11-12 한국전자통신연구원 박막 트랜지스터 및 그 제조 방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3587537B2 (ja) * 1992-12-09 2004-11-10 株式会社半導体エネルギー研究所 半導体装置
JPH06202146A (ja) * 1992-12-28 1994-07-22 Fujitsu Ltd パターン形成方法
JPH07312425A (ja) * 1994-05-18 1995-11-28 Hitachi Ltd 薄膜トランジスタ、それに関連するテーパエッチング方法および多層膜形成方法ならびに画像表示装置
JP4485078B2 (ja) * 2000-01-26 2010-06-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4522529B2 (ja) * 2000-03-29 2010-08-11 株式会社半導体エネルギー研究所 半導体装置およびその作製方法

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JP2006113571A (ja) 2006-04-27

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