JP4971305B2 - 小型ゲッタ蒸着層の形成方法 - Google Patents
小型ゲッタ蒸着層の形成方法 Download PDFInfo
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- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
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- B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
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- G03F7/004—Photosensitive materials
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- H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
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Description
従って、空洞内へこれらのガスを除くことができるゲッタ材料を導入することが必要である。MEMSデバイス内でのゲッタ材料の使用は、例えば米国特許第5952572号、同第6499354号、同第6590850号、同第6621134号、同第6635509号および米国特許出願公開第2003/0138656号に記載される。
生じる第1の問題は、スパッタリングの間、レジストの過熱とその後のその硬化が生じ、その際にレジスト層は最早溶媒で除去され得ないということであり、この問題はこの分野で周知であり、そしてそれは、例えばエヌ.エー.パパニコロウ(N.A.Papanicolaou)等によるInst.Phys.Conf.Ser.No.65、407−414頁(特に411頁を参照のこと)の“リフトオフによって定義されるスパッタ処理されたアモルファス金属ゲートを用いた低ノイズMOSFET”の論文に記載される。問題を打開するために、この論文は蒸着の間に支持体を約10℃の温度で冷却することを提案するが、装置を複雑化するのに加えて、これは、リフトオフが適用される製品において通常望まれない効果である、蒸着された層の密度を減少させるという結果を招く。
これらの方法の厄介な問題の結果として、スパッタリング蒸着技術は、リフトオフ方法における蒸着処理として実際の産業上の応用がされていない。
支持体上に感光性高分子材料層を形成し、
上記高分子層の部分に化学的変性を引き起こすために高分子層の少なくとも一部を選択的に露光させ、
上記高分子層の上記のようにして露光された部分又は上記のようにして露光されなかった部分の1方のみを第1溶媒で除き、上記高分子層内にその底壁が支持体の表面によって形成される少なくとも1つの空洞を形成し、
上記空洞の底部および第1溶媒によって除かれなかった高分子層の部分の上にゲッタ材料の薄層を陰極析出法によって形成し、そして
第1溶媒によって除かれなかった高分子部分を第2溶媒で除くことによって、上記支持体の表面に少なくとも1つのゲッタ材料の蒸着層を残すこと、を含む方法において、
前記の陰極析出工程が、高分子層の低部での凹所形成のための工程あるいは処理のいずれによっても先行されていないこと、そして上記陰極析出工程が約1〜5Paの容器圧力で且つプラズマが実際に関係するターゲットの面積1cm2当たり6〜13Wの比出力で行われることを特徴とするリフトオフ方法によってこれらと他のメリットが得られる。
本発明による方法のさらなる利点および特徴は、添付の図面を参照した以下の詳細な記載から当業者に明らかであろう。
本発明のリフトオフ方法の第1工程は支持体10(図1.a)の選択にある。支持体は金属、セラミック、ガラス、石英であり得るか又はそれは場合により後の操作が行われる表面へのパッシベーション層(例えば、酸化ケイ素又は窒化ケイ素で作られる)を用いた半導体材料で作られ得る。材料の選択はこの方法で製造されるゲッタデバイスの最終の用途に依存する。最もよく使われる材料は、10分の数mm〜約1mmの厚さで約10〜30cmの可変の直径のウエハーにて市販される単結晶又は多結晶シリコンである。
次いで、先に露光の済んだ11の領域(又は溶液に依っては、露光されなかった領域)がいわゆる“現像液”を用いて選択的に除かれる。例えば、膜11が登録商標MICROPOSIT S−1800シリーズの溶液のスピンコーティング又はスプレーコーティングによって調製されたら、適した現像液はシプレイ社(Shipley Company)からの登録商標MICROPOSIT MF−300シリーズのそれらであり、一方、ORDYLドライフィルムを使用する場合は、適した溶媒は1重量%の炭酸ナトリウム水溶液である。この工程の結果が図1.dに示され、そして開口12、12’、・・・を有する層11と一体となった支持体10からなる。
蒸着されたゲッタ材料層の空隙率を増やすために、ターゲットと支持体とをそれらの向かい合う面が平行でないように配置すること、そして蒸着の間支持体を動かす(例えば、回転させる)ことも同様に可能である。
最後に、本発明方法の最後の工程は支持体10上になお存在する高分子蒸着層11の部分の溶媒を用いた除去にある。
前述のように、この工程は、従来技術の方法においては前述の特別な方策、特に開口12、12’、・・・の周辺で層11の下側の“逃げ溝(アンダーカット)”の形成が用いられないと、実際に行うことが不可能であるひとつである。反対に、この発明者らは上述の特別な条件でスパッタリング工程を行うことによって、特別な方策を用いることなく、層11の溶媒による除去が効果的に起こるということを観察した。層11の除去のための溶媒として、層が、MICROPOSIT溶液で調製された場合は登録商標MICROPOSIT REMOVERシリーズの製品を、又はORDYLドライフィルムの場合は40−50℃で水酸化ナトリウム溶液を用いることが可能である。
11 光硬化高分子材料からなる層
12 開口
12’ 開口
13 ゲッタ材料の薄層
131 蒸着層
131’ 蒸着層
20 蒸着層
21 露光された領域
Claims (9)
- 小型ゲッタ蒸着層(131、131’、・・・、20)の形成のためのリフトオフ方法であって、下記の工程:
支持体(10)上に感光性高分子材料層(11)を形成し、
上記高分子層の部分に化学的変性を引き起こすために高分子層の少なくとも一部を選択的に露光させ、
上記高分子層の上記のようにして露光された部分又は上記のようにして露光されなかった部分の1方のみを第1溶媒で除き、上記高分子層内にその底壁が支持体の表面によって形成される少なくとも1つの空洞(12、12’、・・・)を形成し、
上記空洞の底部および第1溶媒によって除かれなかった高分子層の部分の上にゲッタ材料の薄層(13)を陰極析出によって形成し、そして
第1溶媒によって除かれなかった高分子部分を第2溶媒で除くことによって、上記支持体の表面に少なくとも1つのゲッタ材料の蒸着層(131、131’、・・・、20)を残すこと、を含む方法において、
前記の陰極析出工程が、高分子層の低部での凹所形成のための工程あるいは処理のいずれによっても先行されていないこと、そして上記陰極析出工程が1〜5Paの容器圧力で且つプラズマが実際に関係するターゲットの面積1cm2当たり6〜13Wの比出力で行われることを特徴とするリフトオフ方法。 - 陰極析出の間のターゲットと支持体との距離が40mmより大きい請求項1に記載の方法。
- 析出の間に支持体が冷却される請求項1に記載の方法。
- 支持体の材料が金属、セラミック、ガラス、石英又は半導体材料のなかから選ばれる請求項1に記載の方法。
- 陰極析出の間の容器内の圧力が1.5〜4Paである請求項1に記載の方法。
- 陰極析出の間、支持体の表面が、ターゲットの表面に対して非平行に保持され、且つターゲットに対して動きを続ける請求項1に記載の方法。
- 蒸着したゲッタ材料が、チタニウム、ジルコニウムとコバルトと希土類との合金、又はジルコニウム、バナジウムおよび/又はチタニウムの合金あるいは化合物の中から選ばれる請求項1に記載の方法。
- 高分子層内に第1溶媒を用いて少なくとも1つの空洞を形成する工程と、ゲッタ材料を陰極析出によって蒸着する工程との間に、高分子の硬化を引き起こすために有効な温度まで高分子層の一部の熱処理を行う工程をさらに含む請求項1に記載の方法。
- 上記温度が100〜150℃の範囲である請求項8に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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IT000616A ITMI20050616A1 (it) | 2005-04-12 | 2005-04-12 | Processo per la formazione di depositi getter miniaturizzati e depositi getrter cosi'ottenuti |
ITMI2005A000616 | 2005-04-12 | ||
PCT/IT2006/000242 WO2006109343A2 (en) | 2005-04-12 | 2006-04-11 | Process for the formation of miniaturized getter deposits and getterdeposits so obtained |
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JP2008537981A JP2008537981A (ja) | 2008-10-02 |
JP4971305B2 true JP4971305B2 (ja) | 2012-07-11 |
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JP2008506057A Active JP4971305B2 (ja) | 2005-04-12 | 2006-04-11 | 小型ゲッタ蒸着層の形成方法 |
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US (1) | US7998319B2 (ja) |
EP (1) | EP1869696B1 (ja) |
JP (1) | JP4971305B2 (ja) |
KR (1) | KR100930738B1 (ja) |
CN (1) | CN101156227B (ja) |
AT (1) | ATE398831T1 (ja) |
CA (1) | CA2602808C (ja) |
DE (1) | DE602006001518D1 (ja) |
DK (1) | DK1869696T3 (ja) |
ES (1) | ES2308746T3 (ja) |
IT (1) | ITMI20050616A1 (ja) |
NO (1) | NO338707B1 (ja) |
PL (1) | PL1869696T3 (ja) |
WO (1) | WO2006109343A2 (ja) |
Families Citing this family (7)
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ITMI20052343A1 (it) | 2005-12-06 | 2007-06-07 | Getters Spa | Processo per la produzione di dispositivi micromeccanici contenenti un materiale getter e dispositivi cosi'prodotti |
ITMI20070301A1 (it) | 2007-02-16 | 2008-08-17 | Getters Spa | Supporti comprendenti materiali getter e sorgenti di metalli alcalini o alcalino-terrosi per sistemi di termoregolazione basati su effetto tunnel |
FR2922202B1 (fr) * | 2007-10-15 | 2009-11-20 | Commissariat Energie Atomique | Structure comportant une couche getter et une sous-couche d'ajustement et procede de fabrication. |
DE102017210459A1 (de) | 2017-06-22 | 2018-12-27 | Robert Bosch Gmbh | Mikromechanische Vorrichtung mit einer ersten Kaverne und einer zweiten Kaverne |
FR3083537B1 (fr) * | 2018-07-06 | 2021-07-30 | Ulis | Boitier hermetique comportant un getter, composant integrant un tel boitier hermetique et procede de fabrication associe |
FR3088319B1 (fr) | 2018-11-08 | 2020-10-30 | Ulis | Boitier hermetique comportant un getter, composant optoelectronique ou dispositif mems integrant un tel boitier hermetique et procede de fabrication associe |
FR3109936B1 (fr) | 2020-05-07 | 2022-08-05 | Lynred | Procede de fabrication d’un microsysteme electromecanique et microsysteme electromecanique |
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EP0341843A3 (en) * | 1988-05-09 | 1991-03-27 | International Business Machines Corporation | A process of forming a conductor pattern |
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JP4235438B2 (ja) * | 2002-12-04 | 2009-03-11 | 株式会社テスコム | 有機elディスプレイパネル、有機elディスプレイパネルのゲッタ部形成方法及び有機elディスプレイパネルのゲッタ部形成装置 |
ITMI20031178A1 (it) | 2003-06-11 | 2004-12-12 | Getters Spa | Depositi multistrato getter non evaporabili ottenuti per |
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WO2006109343A3 (en) | 2006-12-14 |
ES2308746T3 (es) | 2008-12-01 |
US7998319B2 (en) | 2011-08-16 |
KR20080016991A (ko) | 2008-02-25 |
WO2006109343A2 (en) | 2006-10-19 |
DK1869696T3 (da) | 2008-10-13 |
CN101156227B (zh) | 2011-01-26 |
NO338707B1 (no) | 2016-10-03 |
CA2602808C (en) | 2013-11-26 |
ITMI20050616A1 (it) | 2006-10-13 |
KR100930738B1 (ko) | 2009-12-09 |
ATE398831T1 (de) | 2008-07-15 |
NO20074482L (no) | 2007-10-25 |
JP2008537981A (ja) | 2008-10-02 |
CA2602808A1 (en) | 2006-10-19 |
EP1869696B1 (en) | 2008-06-18 |
EP1869696A2 (en) | 2007-12-26 |
CN101156227A (zh) | 2008-04-02 |
US20080171180A1 (en) | 2008-07-17 |
DE602006001518D1 (de) | 2008-07-31 |
PL1869696T3 (pl) | 2008-10-31 |
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