NO20074482L - Prosess for a danne miniatyriserte getteravsetninger og getteravsetninger dannet slik - Google Patents

Prosess for a danne miniatyriserte getteravsetninger og getteravsetninger dannet slik

Info

Publication number
NO20074482L
NO20074482L NO20074482A NO20074482A NO20074482L NO 20074482 L NO20074482 L NO 20074482L NO 20074482 A NO20074482 A NO 20074482A NO 20074482 A NO20074482 A NO 20074482A NO 20074482 L NO20074482 L NO 20074482L
Authority
NO
Norway
Prior art keywords
getter
forming
getter deposits
solvent
layer
Prior art date
Application number
NO20074482A
Other languages
English (en)
Other versions
NO338707B1 (no
Inventor
Marco Moraja
Andrea Conte
Sara Guadagnuolo
Original Assignee
Getters Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Getters Spa filed Critical Getters Spa
Publication of NO20074482L publication Critical patent/NO20074482L/no
Publication of NO338707B1 publication Critical patent/NO338707B1/no

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
    • B81C1/00285—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y10T428/24612—Composite web or sheet
    • Y10T428/2462—Composite web or sheet with partial filling of valleys on outer surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Yarns And Mechanical Finishing Of Yarns Or Ropes (AREA)
  • Portable Nailing Machines And Staplers (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

En prosess for å danne miniatyriserte getteravsetninger blir beskrevet, omfattende følgende trinn: å danne et lag (11) av et fotofølsomt polymermateriale på en bærer (10); selektivt å eksponere polymerlaget for å forårsake en kjemisk modifikasjon i en del av polymerlaget; å fjerne med et løsemiddel den tidligere eksponerte eller den tidligere ikke eksponerte delen av polymerlaget, for derved å danne kaviteter (12, 121, ... ) i polymerlaget; å danne et tynt lag (13) av et gettermateriale ved hjelp av katodeavsetning ved bunnen av kaviteten og på restpolymeren; og å fjerne, med et annet løsemiddel, den polymerdelen som ikke ble fjernet ved hjelp av det første løsemiddelet, for å etterlate minst en gettermaterialavsetning (131,131', ... ; 20) på bærerflaten. Oppfinnelsen vedrører også miniatyriserte getteravsetninger fremskaffet ved hjelp av denne prosessen.
NO20074482A 2005-04-12 2007-09-03 Prosess for å danne miniatyriserte getteravsetninger og getteravsetninger dannet slik NO338707B1 (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IT000616A ITMI20050616A1 (it) 2005-04-12 2005-04-12 Processo per la formazione di depositi getter miniaturizzati e depositi getrter cosi'ottenuti
PCT/IT2006/000242 WO2006109343A2 (en) 2005-04-12 2006-04-11 Process for the formation of miniaturized getter deposits and getterdeposits so obtained

Publications (2)

Publication Number Publication Date
NO20074482L true NO20074482L (no) 2007-10-25
NO338707B1 NO338707B1 (no) 2016-10-03

Family

ID=36968973

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20074482A NO338707B1 (no) 2005-04-12 2007-09-03 Prosess for å danne miniatyriserte getteravsetninger og getteravsetninger dannet slik

Country Status (14)

Country Link
US (1) US7998319B2 (no)
EP (1) EP1869696B1 (no)
JP (1) JP4971305B2 (no)
KR (1) KR100930738B1 (no)
CN (1) CN101156227B (no)
AT (1) ATE398831T1 (no)
CA (1) CA2602808C (no)
DE (1) DE602006001518D1 (no)
DK (1) DK1869696T3 (no)
ES (1) ES2308746T3 (no)
IT (1) ITMI20050616A1 (no)
NO (1) NO338707B1 (no)
PL (1) PL1869696T3 (no)
WO (1) WO2006109343A2 (no)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITMI20052343A1 (it) 2005-12-06 2007-06-07 Getters Spa Processo per la produzione di dispositivi micromeccanici contenenti un materiale getter e dispositivi cosi'prodotti
ITMI20070301A1 (it) 2007-02-16 2008-08-17 Getters Spa Supporti comprendenti materiali getter e sorgenti di metalli alcalini o alcalino-terrosi per sistemi di termoregolazione basati su effetto tunnel
FR2922202B1 (fr) * 2007-10-15 2009-11-20 Commissariat Energie Atomique Structure comportant une couche getter et une sous-couche d'ajustement et procede de fabrication.
DE102017210459A1 (de) 2017-06-22 2018-12-27 Robert Bosch Gmbh Mikromechanische Vorrichtung mit einer ersten Kaverne und einer zweiten Kaverne
FR3083537B1 (fr) * 2018-07-06 2021-07-30 Ulis Boitier hermetique comportant un getter, composant integrant un tel boitier hermetique et procede de fabrication associe
FR3088319B1 (fr) 2018-11-08 2020-10-30 Ulis Boitier hermetique comportant un getter, composant optoelectronique ou dispositif mems integrant un tel boitier hermetique et procede de fabrication associe
FR3109936B1 (fr) 2020-05-07 2022-08-05 Lynred Procede de fabrication d’un microsysteme electromecanique et microsysteme electromecanique

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CN1003826B (zh) * 1985-04-16 1989-04-05 北京有色金属研究总院 宽激活温度范围吸气剂和吸气元件
EP0341843A3 (en) * 1988-05-09 1991-03-27 International Business Machines Corporation A process of forming a conductor pattern
EP0734589B1 (en) * 1993-12-13 1998-03-25 Honeywell Inc. Integrated silicon vacuum micropackage for infrared devices
US5594170A (en) * 1994-06-15 1997-01-14 Alliedsignal Inc. Kip cancellation in a pendulous silicon accelerometer
US5656778A (en) * 1995-04-24 1997-08-12 Kearfott Guidance And Navigation Corporation Micromachined acceleration and coriolis sensor
US5705432A (en) * 1995-12-01 1998-01-06 Hughes Aircraft Company Process for providing clean lift-off of sputtered thin film layers
US5658469A (en) * 1995-12-11 1997-08-19 Quantum Peripherals Colorado, Inc. Method for forming re-entrant photoresist lift-off profile for thin film device processing and a thin film device made thereby
JPH09196682A (ja) * 1996-01-19 1997-07-31 Matsushita Electric Ind Co Ltd 角速度センサと加速度センサ
US5821836A (en) * 1997-05-23 1998-10-13 The Regents Of The University Of Michigan Miniaturized filter assembly
US6499354B1 (en) * 1998-05-04 2002-12-31 Integrated Sensing Systems (Issys), Inc. Methods for prevention, reduction, and elimination of outgassing and trapped gases in micromachined devices
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IT1312248B1 (it) * 1999-04-12 2002-04-09 Getters Spa Metodo per aumentare la produttivita' di processi di deposizione distrati sottili su un substrato e dispositivi getter per la
JP4258960B2 (ja) 2000-07-28 2009-04-30 株式会社村田製作所 薄膜形成方法
US6590850B2 (en) * 2001-03-07 2003-07-08 Hewlett-Packard Development Company, L.P. Packaging for storage devices using electron emissions
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JP2004066225A (ja) * 2002-06-13 2004-03-04 Lg Electronics Inc ゲッタの組成物及び該ゲッタの組成物を利用した電界放出表示装置
JP4235438B2 (ja) * 2002-12-04 2009-03-11 株式会社テスコム 有機ｅｌディスプレイパネル、有機ｅｌディスプレイパネルのゲッタ部形成方法及び有機ｅｌディスプレイパネルのゲッタ部形成装置
ITMI20031178A1 (it) 2003-06-11 2004-12-12 Getters Spa Depositi multistrato getter non evaporabili ottenuti per

Also Published As

Publication number Publication date
PL1869696T3 (pl) 2008-10-31
CN101156227B (zh) 2011-01-26
DE602006001518D1 (de) 2008-07-31
EP1869696B1 (en) 2008-06-18
CA2602808C (en) 2013-11-26
US7998319B2 (en) 2011-08-16
JP4971305B2 (ja) 2012-07-11
EP1869696A2 (en) 2007-12-26
JP2008537981A (ja) 2008-10-02
WO2006109343A2 (en) 2006-10-19
CN101156227A (zh) 2008-04-02
NO338707B1 (no) 2016-10-03
DK1869696T3 (da) 2008-10-13
KR100930738B1 (ko) 2009-12-09
ES2308746T3 (es) 2008-12-01
US20080171180A1 (en) 2008-07-17
WO2006109343A3 (en) 2006-12-14
CA2602808A1 (en) 2006-10-19
ATE398831T1 (de) 2008-07-15
ITMI20050616A1 (it) 2006-10-13
KR20080016991A (ko) 2008-02-25

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