ATE398831T1 - Prozess zur bildung miniaturisierter getter- ablagerungen und so erhaltene getterablagerungen - Google Patents

Prozess zur bildung miniaturisierter getter- ablagerungen und so erhaltene getterablagerungen

Info

Publication number
ATE398831T1
ATE398831T1 AT06745274T AT06745274T ATE398831T1 AT E398831 T1 ATE398831 T1 AT E398831T1 AT 06745274 T AT06745274 T AT 06745274T AT 06745274 T AT06745274 T AT 06745274T AT E398831 T1 ATE398831 T1 AT E398831T1
Authority
AT
Austria
Prior art keywords
forming
getter
getter deposits
deposits
solvent
Prior art date
Application number
AT06745274T
Other languages
English (en)
Inventor
Marco Moraja
Andrea Conte
Sara Guadagnuolo
Original Assignee
Getters Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Getters Spa filed Critical Getters Spa
Application granted granted Critical
Publication of ATE398831T1 publication Critical patent/ATE398831T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
    • B81C1/00285—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y10T428/24612—Composite web or sheet
    • Y10T428/2462—Composite web or sheet with partial filling of valleys on outer surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)
  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Yarns And Mechanical Finishing Of Yarns Or Ropes (AREA)
  • Portable Nailing Machines And Staplers (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
AT06745274T 2005-04-12 2006-04-11 Prozess zur bildung miniaturisierter getter- ablagerungen und so erhaltene getterablagerungen ATE398831T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT000616A ITMI20050616A1 (it) 2005-04-12 2005-04-12 Processo per la formazione di depositi getter miniaturizzati e depositi getrter cosi'ottenuti

Publications (1)

Publication Number Publication Date
ATE398831T1 true ATE398831T1 (de) 2008-07-15

Family

ID=36968973

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06745274T ATE398831T1 (de) 2005-04-12 2006-04-11 Prozess zur bildung miniaturisierter getter- ablagerungen und so erhaltene getterablagerungen

Country Status (14)

Country Link
US (1) US7998319B2 (de)
EP (1) EP1869696B1 (de)
JP (1) JP4971305B2 (de)
KR (1) KR100930738B1 (de)
CN (1) CN101156227B (de)
AT (1) ATE398831T1 (de)
CA (1) CA2602808C (de)
DE (1) DE602006001518D1 (de)
DK (1) DK1869696T3 (de)
ES (1) ES2308746T3 (de)
IT (1) ITMI20050616A1 (de)
NO (1) NO338707B1 (de)
PL (1) PL1869696T3 (de)
WO (1) WO2006109343A2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITMI20052343A1 (it) 2005-12-06 2007-06-07 Getters Spa Processo per la produzione di dispositivi micromeccanici contenenti un materiale getter e dispositivi cosi'prodotti
ITMI20070301A1 (it) 2007-02-16 2008-08-17 Getters Spa Supporti comprendenti materiali getter e sorgenti di metalli alcalini o alcalino-terrosi per sistemi di termoregolazione basati su effetto tunnel
FR2922202B1 (fr) * 2007-10-15 2009-11-20 Commissariat Energie Atomique Structure comportant une couche getter et une sous-couche d'ajustement et procede de fabrication.
DE102017210459A1 (de) 2017-06-22 2018-12-27 Robert Bosch Gmbh Mikromechanische Vorrichtung mit einer ersten Kaverne und einer zweiten Kaverne
FR3083537B1 (fr) * 2018-07-06 2021-07-30 Ulis Boitier hermetique comportant un getter, composant integrant un tel boitier hermetique et procede de fabrication associe
FR3088319B1 (fr) 2018-11-08 2020-10-30 Ulis Boitier hermetique comportant un getter, composant optoelectronique ou dispositif mems integrant un tel boitier hermetique et procede de fabrication associe
FR3109936B1 (fr) 2020-05-07 2022-08-05 Lynred Procede de fabrication d’un microsysteme electromecanique et microsysteme electromecanique

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1003826B (zh) * 1985-04-16 1989-04-05 北京有色金属研究总院 宽激活温度范围吸气剂和吸气元件
EP0341843A3 (de) * 1988-05-09 1991-03-27 International Business Machines Corporation Verfahren zur Herstellung eines Leitermusters
CA2179052C (en) * 1993-12-13 2001-02-13 Robert E. Higashi Integrated silicon vacuum micropackage for infrared devices
US5594170A (en) * 1994-06-15 1997-01-14 Alliedsignal Inc. Kip cancellation in a pendulous silicon accelerometer
US5656778A (en) * 1995-04-24 1997-08-12 Kearfott Guidance And Navigation Corporation Micromachined acceleration and coriolis sensor
US5705432A (en) * 1995-12-01 1998-01-06 Hughes Aircraft Company Process for providing clean lift-off of sputtered thin film layers
US5658469A (en) * 1995-12-11 1997-08-19 Quantum Peripherals Colorado, Inc. Method for forming re-entrant photoresist lift-off profile for thin film device processing and a thin film device made thereby
JPH09196682A (ja) * 1996-01-19 1997-07-31 Matsushita Electric Ind Co Ltd 角速度センサと加速度センサ
US5821836A (en) * 1997-05-23 1998-10-13 The Regents Of The University Of Michigan Miniaturized filter assembly
US6499354B1 (en) * 1998-05-04 2002-12-31 Integrated Sensing Systems (Issys), Inc. Methods for prevention, reduction, and elimination of outgassing and trapped gases in micromachined devices
US6058027A (en) * 1999-02-16 2000-05-02 Maxim Integrated Products, Inc. Micromachined circuit elements driven by micromachined DC-to-DC converter on a common substrate
IT1312248B1 (it) * 1999-04-12 2002-04-09 Getters Spa Metodo per aumentare la produttivita' di processi di deposizione distrati sottili su un substrato e dispositivi getter per la
JP4258960B2 (ja) 2000-07-28 2009-04-30 株式会社村田製作所 薄膜形成方法
US6590850B2 (en) * 2001-03-07 2003-07-08 Hewlett-Packard Development Company, L.P. Packaging for storage devices using electron emissions
GB2404084A (en) 2001-11-10 2005-01-19 Trikon Holdings Ltd Method of forming a patterned metal layer
US6923625B2 (en) * 2002-01-07 2005-08-02 Integrated Sensing Systems, Inc. Method of forming a reactive material and article formed thereby
US6621134B1 (en) * 2002-02-07 2003-09-16 Shayne Zurn Vacuum sealed RF/microwave microresonator
US6635509B1 (en) * 2002-04-12 2003-10-21 Dalsa Semiconductor Inc. Wafer-level MEMS packaging
JP2004066225A (ja) * 2002-06-13 2004-03-04 Lg Electronics Inc ゲッタの組成物及び該ゲッタの組成物を利用した電界放出表示装置
JP4235438B2 (ja) * 2002-12-04 2009-03-11 株式会社テスコム 有機ｅｌディスプレイパネル、有機ｅｌディスプレイパネルのゲッタ部形成方法及び有機ｅｌディスプレイパネルのゲッタ部形成装置
ITMI20031178A1 (it) 2003-06-11 2004-12-12 Getters Spa Depositi multistrato getter non evaporabili ottenuti per

Also Published As

Publication number Publication date
WO2006109343A3 (en) 2006-12-14
DE602006001518D1 (de) 2008-07-31
NO20074482L (no) 2007-10-25
EP1869696A2 (de) 2007-12-26
US7998319B2 (en) 2011-08-16
JP2008537981A (ja) 2008-10-02
WO2006109343A2 (en) 2006-10-19
US20080171180A1 (en) 2008-07-17
CA2602808C (en) 2013-11-26
ES2308746T3 (es) 2008-12-01
EP1869696B1 (de) 2008-06-18
PL1869696T3 (pl) 2008-10-31
CA2602808A1 (en) 2006-10-19
CN101156227A (zh) 2008-04-02
KR100930738B1 (ko) 2009-12-09
JP4971305B2 (ja) 2012-07-11
ITMI20050616A1 (it) 2006-10-13
CN101156227B (zh) 2011-01-26
NO338707B1 (no) 2016-10-03
KR20080016991A (ko) 2008-02-25
DK1869696T3 (da) 2008-10-13

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