WO2008146918A1 - プラズマ処理装置用電極の製造方法および再生方法 - Google Patents

プラズマ処理装置用電極の製造方法および再生方法 Download PDF

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Publication number
WO2008146918A1
WO2008146918A1 PCT/JP2008/060043 JP2008060043W WO2008146918A1 WO 2008146918 A1 WO2008146918 A1 WO 2008146918A1 JP 2008060043 W JP2008060043 W JP 2008060043W WO 2008146918 A1 WO2008146918 A1 WO 2008146918A1
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WO
WIPO (PCT)
Prior art keywords
electrode
reclaiming
manufacturing
methods
processing apparatus
Prior art date
Application number
PCT/JP2008/060043
Other languages
English (en)
French (fr)
Inventor
Fumitomo Kawahara
Original Assignee
Mitsui Engineering & Shipbuilding Co., Ltd.
Admap Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Engineering & Shipbuilding Co., Ltd., Admap Inc filed Critical Mitsui Engineering & Shipbuilding Co., Ltd.
Priority to KR1020097024294A priority Critical patent/KR101119797B1/ko
Priority to JP2008544683A priority patent/JP4355023B2/ja
Priority to US12/602,559 priority patent/US8291581B2/en
Publication of WO2008146918A1 publication Critical patent/WO2008146918A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32559—Protection means, e.g. coatings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49121—Beam lead frame or beam lead device
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49126—Assembling bases
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49128—Assembling formed circuit to base
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base
    • Y10T29/49165—Manufacturing circuit on or in base by forming conductive walled aperture in base

Abstract

　第１の材料からなる第１の基板の表面に複数の基準孔を形成し、複数の柱状部材それぞれを、各柱状部材の少なくとも一部が第１の基板の表面から突出した状態となるよう、前記基準孔それぞれに嵌め入れる。この後、第１の基板の前記表面に、柱状部材それぞれの端部が表面に露出した状態となるように、第２の材料からなる電極表面層を形成し、この後、前記柱状部材を除去する。これにより、柱状部材の突出部分の断面形状に応じた断面の貫通孔を有する電極表面層を少なくとも有する基板状電極を得る。
PCT/JP2008/060043 2007-06-01 2008-05-30 プラズマ処理装置用電極の製造方法および再生方法 WO2008146918A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020097024294A KR101119797B1 (ko) 2007-06-01 2008-05-30 플라즈마 처리 장치용 전극의 제조 방법 및 재생 방법
JP2008544683A JP4355023B2 (ja) 2007-06-01 2008-05-30 プラズマ処理装置用電極の製造方法および再生方法
US12/602,559 US8291581B2 (en) 2007-06-01 2008-05-30 Method for production of substrate electrode for plasma processing

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-146782 2007-06-01
JP2007146782 2007-06-01

Publications (1)

Publication Number Publication Date
WO2008146918A1 true WO2008146918A1 (ja) 2008-12-04

Family

ID=40075148

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/060043 WO2008146918A1 (ja) 2007-06-01 2008-05-30 プラズマ処理装置用電極の製造方法および再生方法

Country Status (4)

Country Link
US (1) US8291581B2 (ja)
JP (1) JP4355023B2 (ja)
KR (1) KR101119797B1 (ja)
WO (1) WO2008146918A1 (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011018894A (ja) * 2009-06-12 2011-01-27 Tokyo Electron Ltd プラズマ処理装置用の消耗部品の再利用方法
WO2012026210A1 (ja) * 2010-08-25 2012-03-01 三井造船株式会社 耐プラズマ部材およびその再生方法
JP2014143101A (ja) * 2013-01-24 2014-08-07 Tokyo Electron Ltd プラズマ処理装置
JP2017212427A (ja) * 2016-05-25 2017-11-30 韓國東海炭素株式會社 半導体製造用部品の再生方法、その再生装置及び再生部品
KR20190119038A (ko) 2017-02-16 2019-10-21 미쓰비시 마테리알 가부시키가이샤 플라즈마 처리 장치용 전극판 및 플라즈마 처리 장치용 전극판의 재생 방법
WO2020003721A1 (ja) * 2018-06-27 2020-01-02 株式会社アドマップ ＳｉＣ部材およびその製造方法
JP2022016604A (ja) * 2014-12-26 2022-01-21 エーサット株式会社 プラズマエッチング装置用の電極

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KR101160906B1 (ko) * 2010-03-17 2012-06-28 최대규 용량 결합 플라즈마 반응기
KR101104638B1 (ko) * 2010-07-16 2012-01-12 주식회사 테스 플라즈마 처리장치
KR101128826B1 (ko) * 2010-08-06 2012-03-23 엔티엠 주식회사 무냉각식 상압 플라즈마 장치
US20120073752A1 (en) * 2010-09-24 2012-03-29 Memc Electronic Materials, Inc. Adapter Ring For Silicon Electrode
CN103250470A (zh) * 2010-12-09 2013-08-14 韩国科学技术院 等离子体发生器
US20120255635A1 (en) * 2011-04-11 2012-10-11 Applied Materials, Inc. Method and apparatus for refurbishing gas distribution plate surfaces
KR101241049B1 (ko) 2011-08-01 2013-03-15 주식회사 플라즈마트 플라즈마 발생 장치 및 플라즈마 발생 방법
KR101246191B1 (ko) 2011-10-13 2013-03-21 주식회사 윈텔 플라즈마 장치 및 기판 처리 장치
KR101332337B1 (ko) 2012-06-29 2013-11-22 태원전기산업 (주) 초고주파 발광 램프 장치
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KR102162480B1 (ko) * 2020-07-01 2020-10-06 한국씰마스타주식회사 씰용 부재 및 그의 제조방법
KR102504152B1 (ko) * 2021-02-15 2023-02-27 (주)단단 마스킹 구조체 및 이를 이용한 플라즈마 에칭용 전극의 재생 방법

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US20060141802A1 (en) * 2004-12-23 2006-06-29 Lam Research Corporation Silicon electrode assembly surface decontamination by acidic solution

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011018894A (ja) * 2009-06-12 2011-01-27 Tokyo Electron Ltd プラズマ処理装置用の消耗部品の再利用方法
KR101814201B1 (ko) * 2009-06-12 2018-01-02 도쿄엘렉트론가부시키가이샤 플라즈마 처리장치용의 소모부품의 재이용 방법
WO2012026210A1 (ja) * 2010-08-25 2012-03-01 三井造船株式会社 耐プラズマ部材およびその再生方法
JP2012049220A (ja) * 2010-08-25 2012-03-08 Mitsui Eng & Shipbuild Co Ltd 耐プラズマ部材およびその再生方法
CN103189967A (zh) * 2010-08-25 2013-07-03 三井造船株式会社 耐电浆构件及其再生方法
EP2610897A4 (en) * 2010-08-25 2015-12-30 Mitsui Shipbuilding Eng PLASMA RESISTANT ELEMENT AND METHOD FOR REGENERATING THE ELEMENT
JP2014143101A (ja) * 2013-01-24 2014-08-07 Tokyo Electron Ltd プラズマ処理装置
JP2022016604A (ja) * 2014-12-26 2022-01-21 エーサット株式会社 プラズマエッチング装置用の電極
JP2017212427A (ja) * 2016-05-25 2017-11-30 韓國東海炭素株式會社 半導体製造用部品の再生方法、その再生装置及び再生部品
US11133156B2 (en) 2017-02-16 2021-09-28 Mitsubishi Materials Corporation Electrode plate for plasma processing apparatus and method for regenerating electrode plate for plasma processing apparatus
KR20190119038A (ko) 2017-02-16 2019-10-21 미쓰비시 마테리알 가부시키가이샤 플라즈마 처리 장치용 전극판 및 플라즈마 처리 장치용 전극판의 재생 방법
WO2020003721A1 (ja) * 2018-06-27 2020-01-02 株式会社アドマップ ＳｉＣ部材およびその製造方法
JP2020004810A (ja) * 2018-06-27 2020-01-09 株式会社アドマップ ＳｉＣ部材およびその製造方法

Also Published As

Publication number Publication date
KR20100002290A (ko) 2010-01-06
US8291581B2 (en) 2012-10-23
JP4355023B2 (ja) 2009-10-28
JPWO2008146918A1 (ja) 2010-08-19
US20100212148A1 (en) 2010-08-26
KR101119797B1 (ko) 2012-03-22

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