JP4968558B2 - マイクロリソグラフィのための投影対物器械、その投影対物器械を有するマイクロリソグラフィ投影露光装置、構成要素のためのマイクロリソグラフィ製造方法、並びにその方法を用いて製造される構成要素 - Google Patents

マイクロリソグラフィのための投影対物器械、その投影対物器械を有するマイクロリソグラフィ投影露光装置、構成要素のためのマイクロリソグラフィ製造方法、並びにその方法を用いて製造される構成要素 Download PDF

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JP4968558B2
JP4968558B2 JP2010508737A JP2010508737A JP4968558B2 JP 4968558 B2 JP4968558 B2 JP 4968558B2 JP 2010508737 A JP2010508737 A JP 2010508737A JP 2010508737 A JP2010508737 A JP 2010508737A JP 4968558 B2 JP4968558 B2 JP 4968558B2
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field
stray light
plane
projection objective
light component
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JP2010528463A5 (enExample
JP2010528463A (ja
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アクセル ゲーネルマイアー
ダニエル クレーマー
ウラディミル カメノフ
ミハエル トーツェック
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カール・ツァイス・エスエムティー・ゲーエムベーハー
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70941—Stray fields and charges, e.g. stray light, scattered light, flare, transmission loss
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Polarising Elements (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
  • Holo Graphy (AREA)
JP2010508737A 2007-05-25 2008-05-21 マイクロリソグラフィのための投影対物器械、その投影対物器械を有するマイクロリソグラフィ投影露光装置、構成要素のためのマイクロリソグラフィ製造方法、並びにその方法を用いて製造される構成要素 Active JP4968558B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US94011707P 2007-05-25 2007-05-25
DE102007024685 2007-05-25
US60/940,117 2007-05-25
DE102007024685.6 2007-05-25
PCT/EP2008/004084 WO2008145296A1 (en) 2007-05-25 2008-05-21 Projection objective for microlithography, microlithography projection exposure apparatus with said projection objective, microlithographic manufacturing method for components, as well as a component manufactured with said method

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011263850A Division JP5436523B2 (ja) 2007-05-25 2011-12-01 マイクロリソグラフィのための投影対物器械、その投影対物器械を有するマイクロリソグラフィ投影露光装置、構成要素のためのマイクロリソグラフィ製造方法、並びにその方法を用いて製造される構成要素

Publications (3)

Publication Number Publication Date
JP2010528463A JP2010528463A (ja) 2010-08-19
JP2010528463A5 JP2010528463A5 (enExample) 2011-07-14
JP4968558B2 true JP4968558B2 (ja) 2012-07-04

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JP2011263850A Expired - Fee Related JP5436523B2 (ja) 2007-05-25 2011-12-01 マイクロリソグラフィのための投影対物器械、その投影対物器械を有するマイクロリソグラフィ投影露光装置、構成要素のためのマイクロリソグラフィ製造方法、並びにその方法を用いて製造される構成要素

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US (2) US9063439B2 (enExample)
EP (1) EP2165241B1 (enExample)
JP (2) JP4968558B2 (enExample)
KR (1) KR101544224B1 (enExample)
CN (1) CN101689027B (enExample)
DE (1) DE102008001800A1 (enExample)
TW (1) TWI483081B (enExample)
WO (2) WO2008145295A1 (enExample)

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US9097983B2 (en) 2011-05-09 2015-08-04 Kenneth C. Johnson Scanned-spot-array EUV lithography system
US8994920B1 (en) 2010-05-07 2015-03-31 Kenneth C. Johnson Optical systems and methods for absorbance modulation
DE102008001800A1 (de) * 2007-05-25 2008-11-27 Carl Zeiss Smt Ag Projektionsobjektiv für die Mikrolithographie, Mikrolithographie-Projektionsbelichtungsanlage mit einem derartigen Projektionsobjektiv, mikrolithographisches Herstellungsverfahren für Bauelemente sowie mit diesem Verfahren hergestelltes Bauelement
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DE102008043324B4 (de) * 2008-10-30 2010-11-11 Carl Zeiss Smt Ag Optische Anordnung zur dreidimensionalen Strukturierung einer Materialschicht
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US10098529B2 (en) * 2015-10-28 2018-10-16 Ricoh Company, Ltd. Optical design of a light field otoscope
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US10417533B2 (en) * 2016-08-09 2019-09-17 Cognex Corporation Selection of balanced-probe sites for 3-D alignment algorithms
CN106773555B (zh) * 2017-03-21 2019-03-26 上海华力微电子有限公司 补偿由光刻镜头散射光导致曝光误差的方法
CN112034605B (zh) * 2020-09-09 2025-01-24 苏州大学 一种折反式Golay3稀疏孔径光学系统
CN119270401A (zh) * 2023-07-07 2025-01-07 玉晶光电(厦门)有限公司 一种使杂散光多次反射的光学元件

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Also Published As

Publication number Publication date
CN101689027B (zh) 2013-09-25
US9063439B2 (en) 2015-06-23
EP2165241A1 (en) 2010-03-24
CN101689027A (zh) 2010-03-31
WO2008145296A9 (en) 2010-01-14
TW200905414A (en) 2009-02-01
WO2008145295A9 (en) 2010-01-14
JP5436523B2 (ja) 2014-03-05
TWI483081B (zh) 2015-05-01
WO2008145296A1 (en) 2008-12-04
EP2165241B1 (en) 2013-02-27
WO2008145295A1 (en) 2008-12-04
JP2012060155A (ja) 2012-03-22
JP2010528463A (ja) 2010-08-19
KR20100023823A (ko) 2010-03-04
KR101544224B1 (ko) 2015-08-21
US20100079741A1 (en) 2010-04-01
DE102008001800A1 (de) 2008-11-27
US20100079739A1 (en) 2010-04-01

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