KR101544224B1 - 마이크로리소그래피에 대한 투영 대물 렌즈, 상기 투영 대물 렌즈를 가진 마이크로리소그래피 투영 노출 장치, 구성 요소에 대한 마이크로리소그래피 제조 방법, 및 상기 방법으로 제조된 구성 요소 - Google Patents

마이크로리소그래피에 대한 투영 대물 렌즈, 상기 투영 대물 렌즈를 가진 마이크로리소그래피 투영 노출 장치, 구성 요소에 대한 마이크로리소그래피 제조 방법, 및 상기 방법으로 제조된 구성 요소 Download PDF

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KR101544224B1
KR101544224B1 KR1020097024610A KR20097024610A KR101544224B1 KR 101544224 B1 KR101544224 B1 KR 101544224B1 KR 1020097024610 A KR1020097024610 A KR 1020097024610A KR 20097024610 A KR20097024610 A KR 20097024610A KR 101544224 B1 KR101544224 B1 KR 101544224B1
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South Korea
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stray light
light component
field
projection objective
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Korean (ko)
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KR20100023823A (ko
Inventor
다니엘 크라에흐메르
블라디미르 카메노브
미하엘 토트젝
아크셀 고에흐네르메이어
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칼 짜이스 에스엠티 게엠베하
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70941—Stray fields and charges, e.g. stray light, scattered light, flare, transmission loss

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Polarising Elements (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
  • Holo Graphy (AREA)
KR1020097024610A 2007-05-25 2008-05-21 마이크로리소그래피에 대한 투영 대물 렌즈, 상기 투영 대물 렌즈를 가진 마이크로리소그래피 투영 노출 장치, 구성 요소에 대한 마이크로리소그래피 제조 방법, 및 상기 방법으로 제조된 구성 요소 Expired - Fee Related KR101544224B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US94011707P 2007-05-25 2007-05-25
US60/940,117 2007-05-25
DE102007024685.6 2007-05-25
DE102007024685 2007-05-25

Publications (2)

Publication Number Publication Date
KR20100023823A KR20100023823A (ko) 2010-03-04
KR101544224B1 true KR101544224B1 (ko) 2015-08-21

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KR1020097024610A Expired - Fee Related KR101544224B1 (ko) 2007-05-25 2008-05-21 마이크로리소그래피에 대한 투영 대물 렌즈, 상기 투영 대물 렌즈를 가진 마이크로리소그래피 투영 노출 장치, 구성 요소에 대한 마이크로리소그래피 제조 방법, 및 상기 방법으로 제조된 구성 요소

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Country Link
US (2) US9063439B2 (enExample)
EP (1) EP2165241B1 (enExample)
JP (2) JP4968558B2 (enExample)
KR (1) KR101544224B1 (enExample)
CN (1) CN101689027B (enExample)
DE (1) DE102008001800A1 (enExample)
TW (1) TWI483081B (enExample)
WO (2) WO2008145296A1 (enExample)

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WO2015012982A1 (en) * 2013-07-22 2015-01-29 Johnson Kenneth C Scanned-spot-array duv lithography system
US9188874B1 (en) 2011-05-09 2015-11-17 Kenneth C. Johnson Spot-array imaging system for maskless lithography and parallel confocal microscopy
US9097983B2 (en) 2011-05-09 2015-08-04 Kenneth C. Johnson Scanned-spot-array EUV lithography system
US8994920B1 (en) 2010-05-07 2015-03-31 Kenneth C. Johnson Optical systems and methods for absorbance modulation
DE102008001800A1 (de) * 2007-05-25 2008-11-27 Carl Zeiss Smt Ag Projektionsobjektiv für die Mikrolithographie, Mikrolithographie-Projektionsbelichtungsanlage mit einem derartigen Projektionsobjektiv, mikrolithographisches Herstellungsverfahren für Bauelemente sowie mit diesem Verfahren hergestelltes Bauelement
US8570489B2 (en) * 2007-11-08 2013-10-29 Asml Netherlands B.V. Lithographic projection apparatus and method of compensating perturbation factors
DE102008043324B4 (de) 2008-10-30 2010-11-11 Carl Zeiss Smt Ag Optische Anordnung zur dreidimensionalen Strukturierung einer Materialschicht
EP2219077A1 (en) 2009-02-12 2010-08-18 Carl Zeiss SMT AG Projection exposure method, projection exposure system and projection objective
US20110094123A1 (en) * 2009-10-28 2011-04-28 Richard Vaughn Fabric-covered fluid-filled therapeutic foot orthotic with thong-cut device systems
US8443308B2 (en) * 2011-05-02 2013-05-14 Synopsys Inc. EUV lithography flare calculation and compensation
DE102012112773B4 (de) * 2012-12-20 2020-04-30 Jenoptik Optical Systems Gmbh Verfahren zur Herstellung einer wellenfrontkorrigierten optischen Anordnung aus mindestens zwei optischen Elementen und Verwendung des Verfahrens
US9857570B1 (en) * 2014-07-24 2018-01-02 Hoyos Integrity Corporation Full flat mirror guiding reflections to aperture of panoramic optical device
CN104317168B (zh) * 2014-10-28 2016-03-02 中国科学院长春光学精密机械与物理研究所 极紫外光刻系统中与杂散光有关的镜面加工误差分析方法
US20170119237A1 (en) * 2015-10-28 2017-05-04 Ricoh Company, Ltd. Optical Design of a Light Field Otoscope
US10098529B2 (en) * 2015-10-28 2018-10-16 Ricoh Company, Ltd. Optical design of a light field otoscope
US10417533B2 (en) * 2016-08-09 2019-09-17 Cognex Corporation Selection of balanced-probe sites for 3-D alignment algorithms
CN106773555B (zh) * 2017-03-21 2019-03-26 上海华力微电子有限公司 补偿由光刻镜头散射光导致曝光误差的方法
CN112034605B (zh) * 2020-09-09 2025-01-24 苏州大学 一种折反式Golay3稀疏孔径光学系统
CN119270401A (zh) * 2023-07-07 2025-01-07 玉晶光电(厦门)有限公司 一种使杂散光多次反射的光学元件

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JP3679736B2 (ja) 2001-07-04 2005-08-03 キヤノン株式会社 露光装置、露光方法、デバイス製造方法、並びに、デバイス
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JP2006120899A (ja) 2004-10-22 2006-05-11 Nikon Corp 投影光学系、投影光学系の調整方法、投影露光装置、投影露光方法、および投影露光装置の調整方法

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TW200905414A (en) 2009-02-01
US20100079739A1 (en) 2010-04-01
US20100079741A1 (en) 2010-04-01
JP4968558B2 (ja) 2012-07-04
WO2008145295A1 (en) 2008-12-04
WO2008145296A1 (en) 2008-12-04
JP2010528463A (ja) 2010-08-19
TWI483081B (zh) 2015-05-01
CN101689027B (zh) 2013-09-25
JP5436523B2 (ja) 2014-03-05
CN101689027A (zh) 2010-03-31
EP2165241B1 (en) 2013-02-27
KR20100023823A (ko) 2010-03-04
JP2012060155A (ja) 2012-03-22
DE102008001800A1 (de) 2008-11-27
US9063439B2 (en) 2015-06-23
WO2008145295A9 (en) 2010-01-14
WO2008145296A9 (en) 2010-01-14
EP2165241A1 (en) 2010-03-24

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