JP4965835B2 - 構造体、その製造方法、及び該構造体を用いたデバイス - Google Patents

構造体、その製造方法、及び該構造体を用いたデバイス Download PDF

Info

Publication number
JP4965835B2
JP4965835B2 JP2005258274A JP2005258274A JP4965835B2 JP 4965835 B2 JP4965835 B2 JP 4965835B2 JP 2005258274 A JP2005258274 A JP 2005258274A JP 2005258274 A JP2005258274 A JP 2005258274A JP 4965835 B2 JP4965835 B2 JP 4965835B2
Authority
JP
Japan
Prior art keywords
present
substrate
columnar
film
columnar member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005258274A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006297581A5 (enExample
JP2006297581A (ja
Inventor
伸浩 安居
亮子 堀江
透 田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2005258274A priority Critical patent/JP4965835B2/ja
Priority to US11/386,755 priority patent/US7361420B2/en
Publication of JP2006297581A publication Critical patent/JP2006297581A/ja
Priority to US12/040,223 priority patent/US8329001B2/en
Publication of JP2006297581A5 publication Critical patent/JP2006297581A5/ja
Application granted granted Critical
Publication of JP4965835B2 publication Critical patent/JP4965835B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
    • G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
    • G11B5/7369—Two or more non-magnetic underlayers, e.g. seed layers or barrier layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
    • G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/8404—Processes or apparatus specially adapted for manufacturing record carriers manufacturing base layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/855—Coating only part of a support with a magnetic layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Magnetic Record Carriers (AREA)
JP2005258274A 2005-03-25 2005-09-06 構造体、その製造方法、及び該構造体を用いたデバイス Expired - Fee Related JP4965835B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2005258274A JP4965835B2 (ja) 2005-03-25 2005-09-06 構造体、その製造方法、及び該構造体を用いたデバイス
US11/386,755 US7361420B2 (en) 2005-03-25 2006-03-23 Structure, magnetic recording medium, and method of producing the same
US12/040,223 US8329001B2 (en) 2005-03-25 2008-02-29 Structure, magnetic recording medium, and method of producing the same

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005088981 2005-03-25
JP2005088981 2005-03-25
JP2005258274A JP4965835B2 (ja) 2005-03-25 2005-09-06 構造体、その製造方法、及び該構造体を用いたデバイス

Publications (3)

Publication Number Publication Date
JP2006297581A JP2006297581A (ja) 2006-11-02
JP2006297581A5 JP2006297581A5 (enExample) 2008-10-16
JP4965835B2 true JP4965835B2 (ja) 2012-07-04

Family

ID=37033915

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005258274A Expired - Fee Related JP4965835B2 (ja) 2005-03-25 2005-09-06 構造体、その製造方法、及び該構造体を用いたデバイス

Country Status (2)

Country Link
US (2) US7361420B2 (enExample)
JP (1) JP4965835B2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GR1006890B (el) * 2005-09-16 2010-07-19 Ευαγγελος Γογγολιδης Μεθοδος για την κατασκευη επιφανειων μεγαλου επιφανειακου λογου και μεγαλου λογου ασυμμετριας σε υποστρωματα.
DE102005047081B4 (de) * 2005-09-30 2019-01-31 Robert Bosch Gmbh Verfahren zum plasmalosen Ätzen von Silizium mit dem Ätzgas ClF3 oder XeF2
CN101458606B (zh) * 2007-12-12 2012-06-20 清华大学 触摸屏、触摸屏的制备方法及使用该触摸屏的显示装置
KR100978491B1 (ko) * 2008-12-11 2010-08-30 한국과학기술원 Ｌ１0 규칙화 구조의 ＦｅＰｔ 나노 도트 어레이의 제조방법
US20110198570A1 (en) * 2010-02-12 2011-08-18 Research Triangle Institute Self assembled nano dots (sand) and non-self assembled nano-dots (nsand) device structures and fabrication methods thereof to create spacers for energy transfer
US8509039B1 (en) 2012-06-28 2013-08-13 HGST Netherlands B.V. Thermally-assisted recording (TAR) disk with low thermal-conductivity underlayer
JP2014033051A (ja) 2012-08-02 2014-02-20 Toshiba Corp パターン形成方法及び半導体装置の製造方法
US9338536B2 (en) * 2013-05-07 2016-05-10 Bose Corporation Modular headrest-based audio system
JP2015135713A (ja) * 2014-01-17 2015-07-27 株式会社東芝 垂直磁気記録媒体、その製造方法、及び磁気記録再生装置
CN114561621B (zh) * 2021-12-10 2022-12-02 吉林大学 一种高熵金属玻璃薄膜及其制备方法和应用

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4444635A (en) * 1981-07-22 1984-04-24 Hitachi, Ltd. Film forming method
US5211707A (en) * 1991-07-11 1993-05-18 Gte Laboratories Incorporated Semiconductor metal composite field emission cathodes
US6002548A (en) * 1992-11-27 1999-12-14 Fujitsu Limited Magnetic head supporting mechanism
JP3431386B2 (ja) * 1995-03-16 2003-07-28 株式会社東芝 記録素子およびドリフト移動度変調素子
US5602699A (en) * 1995-06-29 1997-02-11 Read-Rite Corporation Gimbal assembly of a magnetic head suspension
JPH0922570A (ja) * 1995-07-03 1997-01-21 Fujitsu Ltd ヘッドアセンブリ及び該ヘッドアセンブリを具備した磁気ディスク装置
US6344271B1 (en) * 1998-11-06 2002-02-05 Nanoenergy Corporation Materials and products using nanostructured non-stoichiometric substances
US6965501B1 (en) * 2000-09-28 2005-11-15 Hitachi Global Storage Technologies, The Netherlands B.V. Integrated lead suspension for high density drive
AU2003207199A1 (en) * 2002-02-12 2003-09-04 Canon Kabushiki Kaisha Structure, method of manufacturing the same, and device using the same
JP4035453B2 (ja) * 2002-02-12 2008-01-23 キヤノン株式会社 構造体、構造体の製造方法、及び該構造体を用いたデバイス
WO2003078685A1 (en) * 2002-03-15 2003-09-25 Canon Kabushiki Kaisha Functional device and method of manufacturing the device, vertical magnetic recording medium, magnetic recording and reproducing device, and information processing device
US6972146B2 (en) * 2002-03-15 2005-12-06 Canon Kabushiki Kaisha Structure having holes and method for producing the same
JP4035457B2 (ja) * 2002-03-15 2008-01-23 キヤノン株式会社 機能デバイスの製造方法
AU2003213353A1 (en) * 2002-03-15 2003-09-29 Canon Kabushiki Kaisha Porous material and process for producing the same
US6872645B2 (en) * 2002-04-02 2005-03-29 Nanosys, Inc. Methods of positioning and/or orienting nanostructures
JP2004311607A (ja) * 2003-04-04 2004-11-04 Canon Inc 磁性体、磁気記録媒体、磁気記録再生装置、情報処理装置及びその製造方法
JP2004310851A (ja) * 2003-04-04 2004-11-04 Canon Inc 磁気記録媒体、磁気記録再生装置及び情報処理装置
JP4053457B2 (ja) * 2003-04-23 2008-02-27 ヒタチグローバルストレージテクノロジーズネザーランドビーブイ サスペンション・アセンブリ及び回転円板形記憶装置
US7545010B2 (en) * 2003-08-08 2009-06-09 Canon Kabushiki Kaisha Catalytic sensor structure
JP4343616B2 (ja) * 2003-08-08 2009-10-14 キヤノン株式会社 ナノ構造体の製造方法及びナノ構造体
JP4434658B2 (ja) * 2003-08-08 2010-03-17 キヤノン株式会社 構造体及びその製造方法
US7745498B2 (en) * 2005-04-13 2010-06-29 Nanosys, Inc. Nanowire dispersion compositions and uses thereof
JP4630774B2 (ja) * 2005-09-06 2011-02-09 キヤノン株式会社 構造体の製造方法
JP2007305270A (ja) * 2006-05-15 2007-11-22 Hitachi Global Storage Technologies Netherlands Bv 磁気ヘッド・アセンブリ及び磁気ディスク装置

Also Published As

Publication number Publication date
US7361420B2 (en) 2008-04-22
US20080182014A1 (en) 2008-07-31
US20060213426A1 (en) 2006-09-28
US8329001B2 (en) 2012-12-11
JP2006297581A (ja) 2006-11-02

Similar Documents

Publication Publication Date Title
US8329001B2 (en) Structure, magnetic recording medium, and method of producing the same
US7718531B2 (en) Method for forming catalyst nanoparticles for growing elongated nanostructures
US7081303B2 (en) Function device and method for manufacturing the same, perpendicular magnetic recording medium, magnetic recording/reproduction apparatus and information processing apparatus
US7545010B2 (en) Catalytic sensor structure
JP6366305B2 (ja) グラフェンの製造方法
JP3935479B2 (ja) カーボンファイバーの製造方法及びそれを使用した電子放出素子の製造方法、電子デバイスの製造方法、画像表示装置の製造方法および、該画像表示装置を用いた情報表示再生装置
JP2009255025A6 (ja) 偏長ナノ構造を成長させるための触媒ナノ粒子の形成方法
JP2008016440A (ja) 炭素ナノチューブ構造体の形成方法及びそれを利用した電界放出素子の製造方法
JP4035457B2 (ja) 機能デバイスの製造方法
JP2004202602A (ja) 微小構造体の製造方法、及び型材の製造方法
JP2006224296A (ja) カーボンナノチューブ構造体及びその製造方法、並びにカーボンナノチューブ構造体を利用した電界放出素子及びその製造方法
JP4329014B2 (ja) 微細構造体の製造方法および微細構造体、表示装置、ならびに記録装置の製造方法および記録装置
JP4971612B2 (ja) 構造体、その製造方法、及び該構造体を用いたデバイス
JP2006297581A5 (enExample)
US20080182100A1 (en) Magnetic anodized aluminium oxide with high oxidation resistance and method for its fabrication
Cronin et al. Bismuth nanowires for potential applications in nanoscale electronics technology
JP4343616B2 (ja) ナノ構造体の製造方法及びナノ構造体
JP2007208144A (ja) 構造体の製造法、構造体、磁気記録媒体および永久磁石
JP4489527B2 (ja) 炭素繊維の作製方法
WO2017085933A1 (ja) 薄膜の製造方法、薄膜材料の製造方法、垂直磁気記録層、複層膜基板及び磁気記録装置
JP2006342402A (ja) 構造体の製造方法
JP2006265716A (ja) めっき液および構造体の製造方法
JP4466179B2 (ja) 糸状体付き金属基体及びその製造方法
JP2006297580A5 (enExample)
Paramguru Growth of carbon nanotubes on anodized titanium oxide templates by catalytic chemical vapor deposition technique

Legal Events

Date Code Title Description
RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20080207

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080903

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080903

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20090324

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20100201

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20100630

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110906

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111107

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20111206

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120306

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20120314

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120327

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120330

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150406

Year of fee payment: 3

LAPS Cancellation because of no payment of annual fees