JP4965067B2 - 表面凸凹構造によって向上した電荷移動度を有する有機薄膜トランジスタ - Google Patents
表面凸凹構造によって向上した電荷移動度を有する有機薄膜トランジスタ Download PDFInfo
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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Description
2Λ sinθ=λ
露光によってΛの間隔周期を有する1次元の格子パターンが有機絶縁層の表面に形成される。
ゲート電極が蒸着されたシリコン基板上に、シクロヘキサノンに10wt%溶解したポリ(4−ニトロフェニルアゾフェニルオキシペンチルメタクリレート−co−ヒドロキシエチルメタクリレート)(Poly(4−nitrophenylazophenyloxypentyl methacrylate−co−hydroxyethyl methacrylate))(Mw=35,000、MWD=2.5)を500nmの厚さでスピンコートした後、100℃のホットプレート上で10分間乾燥させて溶媒を除去した。乾燥基板を、波長488nmのアルゴンレーザ光源を備えたレーザ干渉計を用いて露光させた。この際、レーザビームの入射角度を50°に調節し、間隔周期(Λ)と深さ(h)がそれぞれ500nmと50nmである一軸方向(mono−axial)の格子パターンを得た。図4a及び図4bは製造された有機絶縁層のAFMイメージを示す。
実施例1で製造された表面凸凹構造を有する有機絶縁層上に、トルエンに1wt%溶解したポリ(ジオクチルフルオレン−co−ビチオフェン)(Poly(dioctylfluorene−co−bithophene))を70nmの厚さでスピンコートし、100℃のホットプレート上で30分間乾燥させて溶媒を除去した。製造された活性層上にチャネル長100μm、チャネル幅2nmのシャドーマスクを用い、ソース/ドレイン電極を蒸着して有機TFT素子を製造した。この際、チャネル長方向が、有機絶縁層上に形成された表面凸凹構造の長軸方向(major axis)と一致するようにした。
ゲート電極が蒸着されたシリコン基板上に、シクロヘキサノンに10wt%溶解したポリ(4−ニトロフェニルアゾフェニルオキシペンチルメタクリレート−co−ヒドロキシエチルメタクリレート)(Mw=35,000、MWD=2.5)を500nmの厚さでスピンコートし、100℃のホットプレート上で10分間乾燥させて溶媒を除去して表面凹凸構造を持たない絶縁層を形成した後、実施例2と同様の方法で有機TFT素子を製造した。
・電荷移動度は、下記飽和領域電流式から(ISD)1/2とVGを変数としたグラフを得、そのグラフの傾きから求める。
実施例1及び実施例2と同様に行うが、表面凸凹構造の長軸方向とソース電極及びドレイン電極間のチャネル長方向がそれぞれ図5a及び図5bの構造となるように構成された2つの素子を製作した。これらの素子から電流伝達曲線を測定して図6に示し、電荷移動度曲線を測定して図7に示す。一方、比較のため、表面凸凹構造が形成されていない素子の電流伝達曲線及び電荷移動度曲線を測定し、これを共に示す。図5a、図5b及び図6から分かるように、表面凸凹構造の長軸方向とソース電極及びドレイン電極間のチャネル長方向が互いに平行な素子の場合(II)が、互いに直交する素子の場合(I)より向上した電荷移動度を示すことが分かった。また、互いに直交する素子の場合(I)は、表面凸凹構造を有しない場合に比べて同様または却って卓越した特性を示すことにより、本発明の表面凸凹構造が最終的な有機TFT素子の特性向上に効果的であり、表面凸凹構造の方向が素子の特性に大きい影響を及ぼすことが分かった。
102 有機半導体活性層
103 基板
104 ゲート電極
105 ソース/ドレイン電極
1 Ar+レーザ
2 ビームスプリッタ
3 ミラー
4 1/2波長板または1/4波長板
5 偏光器
6 空間フィルタ+対物レンズ+ピンホール
7 照準レンズ
8 試料
9 回転ステージ
10 入射角。
Claims (6)
- 基板、ゲート電極、有機絶縁層、有機半導体活性層及びソース/ドレイン電極を含む有機薄膜トランジスタにおいて、前記有機絶縁層と有機半導体活性層の界面間に表面凸凹構造が形成されたものであって、
前記有機絶縁層は、主鎖または側鎖に、下記化学式1で表わされる光異性化反応、光架橋化反応または光重合反応を起こす少なくとも1つの作用基を含むポリオレフィン、ポリビニール、ポリ(メタ)アクリル、ポリスチレン、ポリウレタン、ポリイミドおよびこれらの誘導体よりなる群から選択された少なくとも1種の高分子を含む薄膜を形成した後、少なくとも一つ以上の特定の波長を有する光源から、一定の周期を有する干渉パターンで光を入射させ、補強干渉に露光された領域と相殺干渉に露光された部分間に幾何学的高さの差を設けることにより、前記表面凸凹構造が形成されてなることを特徴とする有機薄膜トランジスタ。
- 前記表面凸凹構造は、長軸方向がソース電極とドレイン電極間のチャネル長方向と互いに平行となるように形成されてなることを特徴とする請求項1記載の有機薄膜トランジスタ。
- 前記有機半導体活性層がペンタセン、銅フタロシアニン、ポリチオフェン、ポリアニリン、ポリアセチレン、ポリピロール、ポリフェニレンビニレンおよびこれらの誘導体よりなる群から選択された少なくとも1種の化合物からなることを特徴とする請求項1または2に記載の有機薄膜トランジスタ。
- 前記ゲート及びソース/ドレイン電極が金、銀、アルミニウム、ニッケル、インジウム錫酸化物、ポリチオフェン、ポリアニリン、ポリアセチレン、ポリピロール、ポリフェニレンビニレンまたはPEDOT/PSSからなることを特徴とする請求項1〜3のいずれか1項に記載の有機薄膜トランジスタ。
- 前記基板がガラスまたはプラスチックからなることを特徴とする請求項1〜4のいずれか1項に記載の有機薄膜トランジスタ。
- 前記高分子が、少なくとも一つ以上の特定の波長を有する光源に反応して光異性化反応を示すアゾベンゼン単位を主鎖または側鎖に含む高分子であることを特徴とする請求項1〜5のいずれか1項に記載の有機薄膜トランジスタ。
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KR2003-070549 | 2003-10-10 | ||
KR1020030070549A KR101001471B1 (ko) | 2003-10-10 | 2003-10-10 | 표면요철구조에 의해 향상된 전하 이동도를 갖는 유기박막트랜지스터 |
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JP2005117042A JP2005117042A (ja) | 2005-04-28 |
JP4965067B2 true JP4965067B2 (ja) | 2012-07-04 |
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US (1) | US7417246B2 (ja) |
EP (1) | EP1523050A3 (ja) |
JP (1) | JP4965067B2 (ja) |
KR (1) | KR101001471B1 (ja) |
CN (1) | CN1617367A (ja) |
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KR100669762B1 (ko) | 2004-11-15 | 2007-01-16 | 삼성에스디아이 주식회사 | 유기 박막 트랜지스터 및 이를 구비한 평판 디스플레이 장치 |
KR20060090020A (ko) * | 2005-02-04 | 2006-08-10 | 엘지전자 주식회사 | 3차원 구조의 활성층을 가지는 유기 박막 트랜지스터 및그 제조방법 |
JP4951878B2 (ja) * | 2005-05-31 | 2012-06-13 | ソニー株式会社 | 電界効果型トランジスタの製造方法 |
DE102005059608B4 (de) * | 2005-12-12 | 2009-04-02 | Polyic Gmbh & Co. Kg | Organisches elektronisches Bauelement mit verbesserter Spannungsstabilität und Verfahren zur Herstellung dazu |
JP5182775B2 (ja) | 2006-03-22 | 2013-04-17 | 国立大学法人大阪大学 | トランジスタ素子及びその製造方法、電子デバイス、発光素子並びにディスプレイ |
US7759677B2 (en) * | 2006-09-05 | 2010-07-20 | Electronics And Telecommunications Research Institute | Molecular electronic device including organic dielectric thin film and method of fabricating the same |
KR100982952B1 (ko) * | 2008-03-25 | 2010-09-17 | 홍익대학교부설과학기술연구소 | 단채널 효과를 방지하는 유기 박막 트랜지스터, 그것의제조방법 및 이를 포함하는 박막 트랜지스터 어레이 기판 |
US9336921B2 (en) | 2013-12-17 | 2016-05-10 | Dow Global Technologies Llc | Electrically conducting composites, methods of manufacture thereof and articles comprising the same |
US9330809B2 (en) | 2013-12-17 | 2016-05-03 | Dow Global Technologies Llc | Electrically conducting composites, methods of manufacture thereof and articles comprising the same |
KR101978944B1 (ko) * | 2017-10-30 | 2019-05-15 | 성균관대학교 산학협력단 | 트랜지스터 및 이의 제조 방법 |
KR102553881B1 (ko) | 2018-06-01 | 2023-07-07 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법과 이를 포함하는 박막 트랜지스터 표시판 및 전자 장치 |
CN109803524B (zh) * | 2019-03-11 | 2020-07-28 | 京东方科技集团股份有限公司 | 一种智能玻璃 |
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JPS6060624A (ja) * | 1983-09-13 | 1985-04-08 | Matsushita Electric Ind Co Ltd | 液晶表示パネルおよびその製造方法 |
JPH0680776A (ja) * | 1992-09-02 | 1994-03-22 | Asahi Chem Ind Co Ltd | ポリイミド前駆体及び組成物 |
US6326640B1 (en) * | 1996-01-29 | 2001-12-04 | Motorola, Inc. | Organic thin film transistor with enhanced carrier mobility |
JPH11218763A (ja) * | 1998-02-03 | 1999-08-10 | Hitachi Ltd | 液晶表示素子の製造方法 |
EP1192676A1 (en) * | 1999-06-21 | 2002-04-03 | Cambridge University Technical Services Limited | Aligned polymers for an organic tft |
US6586791B1 (en) * | 2000-07-19 | 2003-07-01 | 3M Innovative Properties Company | Transistor insulator layer incorporating superfine ceramic particles |
US6943359B2 (en) | 2001-03-13 | 2005-09-13 | University Of Utah | Structured organic materials and devices using low-energy particle beams |
DE10126860C2 (de) * | 2001-06-01 | 2003-05-28 | Siemens Ag | Organischer Feldeffekt-Transistor, Verfahren zu seiner Herstellung und Verwendung zum Aufbau integrierter Schaltungen |
US6803092B2 (en) * | 2001-06-26 | 2004-10-12 | 3M Innovative Properties Company | Selective deposition of circuit-protective polymers |
GB2393853B (en) | 2001-07-09 | 2005-08-31 | Plastic Logic Ltd | Low melting point polymer alignment |
JP4207430B2 (ja) * | 2002-01-31 | 2009-01-14 | Jsr株式会社 | 液晶配向剤、液晶配向膜の形成方法および液晶表示素子 |
WO2003067667A1 (fr) * | 2002-02-08 | 2003-08-14 | Dai Nippon Printing Co., Ltd. | Structure de semiconducteur organique, procede de production et dispositif a semiconducteur organique |
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- 2004-10-04 JP JP2004291174A patent/JP4965067B2/ja not_active Expired - Fee Related
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JP2005117042A (ja) | 2005-04-28 |
US7417246B2 (en) | 2008-08-26 |
EP1523050A2 (en) | 2005-04-13 |
KR20050034840A (ko) | 2005-04-15 |
US20050077575A1 (en) | 2005-04-14 |
KR101001471B1 (ko) | 2010-12-14 |
EP1523050A3 (en) | 2006-08-23 |
CN1617367A (zh) | 2005-05-18 |
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