JP4961013B2 - フォトダイオードを用いたｃｍｏｓイメージセンサピクセル - Google Patents

フォトダイオードを用いたｃｍｏｓイメージセンサピクセル Download PDF

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JP4961013B2
JP4961013B2 JP2009509592A JP2009509592A JP4961013B2 JP 4961013 B2 JP4961013 B2 JP 4961013B2 JP 2009509592 A JP2009509592 A JP 2009509592A JP 2009509592 A JP2009509592 A JP 2009509592A JP 4961013 B2 JP4961013 B2 JP 4961013B2
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voltage
image sensor
charge
floating diffusion
photodiode
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JP2009535979A5 (https=
JP2009535979A (ja
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ウィーズ シュー
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オムニヴィジョン テクノロジーズ インコーポレイテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
    • H04N25/672—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction between adjacent sensors or output registers for reading a single image
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2009509592A 2006-05-02 2007-04-18 フォトダイオードを用いたｃｍｏｓイメージセンサピクセル Active JP4961013B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/416,055 US7382008B2 (en) 2006-05-02 2006-05-02 Ultra-small CMOS image sensor pixel using a photodiode potential technique
US11/416,055 2006-05-02
PCT/US2007/009483 WO2007133380A1 (en) 2006-05-02 2007-04-18 Cmos image sensor pixel using a photodiode

Publications (3)

Publication Number Publication Date
JP2009535979A JP2009535979A (ja) 2009-10-01
JP2009535979A5 JP2009535979A5 (https=) 2010-05-27
JP4961013B2 true JP4961013B2 (ja) 2012-06-27

Family

ID=38537945

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009509592A Active JP4961013B2 (ja) 2006-05-02 2007-04-18 フォトダイオードを用いたｃｍｏｓイメージセンサピクセル

Country Status (7)

Country Link
US (1) US7382008B2 (https=)
EP (1) EP2014084B1 (https=)
JP (1) JP4961013B2 (https=)
KR (1) KR101379046B1 (https=)
CN (1) CN101438576B (https=)
TW (1) TWI489620B (https=)
WO (1) WO2007133380A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
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US7652706B2 (en) * 2006-02-15 2010-01-26 Eastman Kodak Company Pixel analog-to-digital converter using a ramped transfer gate clock
US8049256B2 (en) * 2006-10-05 2011-11-01 Omnivision Technologies, Inc. Active pixel sensor having a sensor wafer connected to a support circuit wafer
US7936039B2 (en) * 2008-10-20 2011-05-03 Teledyne Scientific & Imaging, Llc Backside illuminated CMOS image sensor with photo gate pixel
KR200449735Y1 (ko) * 2010-04-07 2010-08-05 주식회사 지테크인터내셔날 체지방 측정장치
US9076706B2 (en) 2011-01-07 2015-07-07 Samsung Electronics Co., Ltd. Image sensor based on depth pixel structure
FR2998666B1 (fr) 2012-11-27 2022-01-07 E2V Semiconductors Procede de production d'images avec information de profondeur et capteur d'image
US9319612B2 (en) * 2013-07-08 2016-04-19 Semiconductor Components Industries, Llc Imagers with improved analog-to-digital circuitry
TWI569644B (zh) * 2015-04-20 2017-02-01 財團法人工業技術研究院 影像感測裝置、系統及其方法和電荷感測裝置
JP2018019335A (ja) * 2016-07-29 2018-02-01 ソニー株式会社 撮像素子および撮像装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH021948A (ja) * 1988-06-10 1990-01-08 Mitsubishi Electric Corp 信号伝送装置
JP2666522B2 (ja) * 1990-05-14 1997-10-22 日本電気株式会社 電荷転送装置
JPH05292409A (ja) * 1992-04-09 1993-11-05 Sony Corp Ｃｃｄ撮像装置
JP2500436B2 (ja) * 1993-05-10 1996-05-29 日本電気株式会社 信号処理装置
CN1163059A (zh) * 1997-04-08 1997-10-29 浙江通用包装机械厂 有螺旋直冷式蒸发器的冰淇淋机
CN1222029A (zh) * 1997-11-11 1999-07-07 日本电气株式会社 输出量高的以cmos为基础的图像传感器
DE19959539A1 (de) 1999-12-09 2001-06-13 Thomson Brandt Gmbh Bildaufnehmer
JP4246890B2 (ja) * 2000-06-26 2009-04-02 株式会社東芝 固体撮像装置
KR100399954B1 (ko) * 2000-12-14 2003-09-29 주식회사 하이닉스반도체 아날로그 상호 연관된 이중 샘플링 기능을 수행하는씨모스 이미지 센서용 비교 장치
US7187410B2 (en) * 2001-03-05 2007-03-06 Matsushita Electric Industrial Co., Ltd. Solid state image sensor
KR20030084341A (ko) * 2002-04-26 2003-11-01 주식회사 하이닉스반도체 특성을 향상시킨 시모스 이미지센서의 단위화소
JP4355148B2 (ja) * 2003-02-28 2009-10-28 パナソニック株式会社 固体撮像装置の駆動方法
US7129883B2 (en) * 2004-02-23 2006-10-31 Sony Corporation Method and apparatus for AD conversion, semiconductor device for detecting distribution of physical quantity, and electronic apparatus
JP4289206B2 (ja) * 2004-04-26 2009-07-01 ソニー株式会社 カウンタ回路
US7238977B2 (en) * 2004-08-19 2007-07-03 Micron Technology, Inc. Wide dynamic range sensor having a pinned diode with multiple pinned voltages
US20070131992A1 (en) * 2005-12-13 2007-06-14 Dialog Semiconductor Gmbh Multiple photosensor pixel image sensor
KR100767629B1 (ko) * 2006-01-05 2007-10-17 한국과학기술원 높은 광감도를 갖는 ｃｍｏｓ 이미지 센서 및 이의 제조방법

Also Published As

Publication number Publication date
TWI489620B (zh) 2015-06-21
KR101379046B1 (ko) 2014-03-28
KR20090009845A (ko) 2009-01-23
US20070257284A1 (en) 2007-11-08
US7382008B2 (en) 2008-06-03
EP2014084B1 (en) 2016-09-14
EP2014084A1 (en) 2009-01-14
WO2007133380A1 (en) 2007-11-22
CN101438576A (zh) 2009-05-20
TW200802832A (en) 2008-01-01
CN101438576B (zh) 2012-11-14
JP2009535979A (ja) 2009-10-01

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