JP4955624B2 - 両面研磨装置 - Google Patents

両面研磨装置 Download PDF

Info

Publication number
JP4955624B2
JP4955624B2 JP2008197508A JP2008197508A JP4955624B2 JP 4955624 B2 JP4955624 B2 JP 4955624B2 JP 2008197508 A JP2008197508 A JP 2008197508A JP 2008197508 A JP2008197508 A JP 2008197508A JP 4955624 B2 JP4955624 B2 JP 4955624B2
Authority
JP
Japan
Prior art keywords
wafer
thickness
polishing
double
surface plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2008197508A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010034462A5 (enExample
JP2010034462A (ja
Inventor
大輔 古川
隆広 木田
忠雄 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2008197508A priority Critical patent/JP4955624B2/ja
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to US13/002,449 priority patent/US8834230B2/en
Priority to SG2013053954A priority patent/SG192518A1/en
Priority to DE112009001875.0T priority patent/DE112009001875B4/de
Priority to KR1020117002430A priority patent/KR101587226B1/ko
Priority to PCT/JP2009/003021 priority patent/WO2010013390A1/ja
Priority to CN200980127186.4A priority patent/CN102089121B/zh
Priority to TW098122953A priority patent/TWI478226B/zh
Publication of JP2010034462A publication Critical patent/JP2010034462A/ja
Publication of JP2010034462A5 publication Critical patent/JP2010034462A5/ja
Application granted granted Critical
Publication of JP4955624B2 publication Critical patent/JP4955624B2/ja
Priority to US14/446,847 priority patent/US9108289B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2008197508A 2008-07-31 2008-07-31 両面研磨装置 Active JP4955624B2 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2008197508A JP4955624B2 (ja) 2008-07-31 2008-07-31 両面研磨装置
SG2013053954A SG192518A1 (en) 2008-07-31 2009-06-30 Wafer polishing method
DE112009001875.0T DE112009001875B4 (de) 2008-07-31 2009-06-30 Waferpolierverfahren und Doppelseitenpoliervorrichtung
KR1020117002430A KR101587226B1 (ko) 2008-07-31 2009-06-30 웨이퍼의 연마 방법 및 양면 연마 장치
PCT/JP2009/003021 WO2010013390A1 (ja) 2008-07-31 2009-06-30 ウェーハの研磨方法および両面研磨装置
CN200980127186.4A CN102089121B (zh) 2008-07-31 2009-06-30 芯片的研磨方法及双面研磨装置
US13/002,449 US8834230B2 (en) 2008-07-31 2009-06-30 Wafer polishing method and double-side polishing apparatus
TW098122953A TWI478226B (zh) 2008-07-31 2009-07-07 Grinding method of double - sided grinding device and wafer
US14/446,847 US9108289B2 (en) 2008-07-31 2014-07-30 Double-side polishing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008197508A JP4955624B2 (ja) 2008-07-31 2008-07-31 両面研磨装置

Publications (3)

Publication Number Publication Date
JP2010034462A JP2010034462A (ja) 2010-02-12
JP2010034462A5 JP2010034462A5 (enExample) 2010-10-21
JP4955624B2 true JP4955624B2 (ja) 2012-06-20

Family

ID=41738563

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008197508A Active JP4955624B2 (ja) 2008-07-31 2008-07-31 両面研磨装置

Country Status (1)

Country Link
JP (1) JP4955624B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6123150B2 (ja) * 2011-08-30 2017-05-10 株式会社Sumco シリコンウェーハ加工量の評価方法およびシリコンウェーハの製造方法
JP6003800B2 (ja) * 2013-05-16 2016-10-05 信越半導体株式会社 ウェーハの両面研磨方法及び両面研磨システム
JP6206388B2 (ja) 2014-12-15 2017-10-04 信越半導体株式会社 シリコンウェーハの研磨方法
JP6222171B2 (ja) * 2015-06-22 2017-11-01 信越半導体株式会社 定寸装置、研磨装置、及び研磨方法
JP6760638B2 (ja) * 2016-04-14 2020-09-23 スピードファム株式会社 平面研磨装置
CN110695788B (zh) * 2019-10-16 2021-05-28 广东博智林机器人有限公司 混凝土边角抹平装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3491337B2 (ja) * 1994-05-13 2004-01-26 株式会社デンソー 半導体厚非接触測定装置
US6301009B1 (en) * 1997-12-01 2001-10-09 Zygo Corporation In-situ metrology system and method
JP3367496B2 (ja) * 2000-01-20 2003-01-14 株式会社ニコン 研磨体、平坦化装置、半導体デバイス製造方法、および半導体デバイス
JP2001009699A (ja) * 1999-07-05 2001-01-16 Nichiden Mach Ltd 平面研磨装置
JP2001077068A (ja) * 1999-09-08 2001-03-23 Sumitomo Metal Ind Ltd 半導体ウエハの研磨終点検出方法及びその装置
JP2001105308A (ja) * 1999-10-04 2001-04-17 Asahi Kasei Corp 光伝送路付研磨装置
JP2002018710A (ja) * 2000-07-07 2002-01-22 Canon Inc 基板研磨方法、基板研磨装置、膜厚測定方法及び膜厚測定装置
JP2002100594A (ja) * 2000-09-22 2002-04-05 Komatsu Electronic Metals Co Ltd 平面研磨方法および装置
JP4281255B2 (ja) * 2001-01-25 2009-06-17 株式会社デンソー ウエハ厚計測装置及びウエハ研磨方法
JP2003001559A (ja) * 2001-06-21 2003-01-08 Mitsubishi Electric Corp 化学的機械研磨方法、化学的機械研磨装置およびスラリー供給装置
JP2003057027A (ja) * 2001-08-10 2003-02-26 Ebara Corp 測定装置
JP2006095677A (ja) * 2004-08-30 2006-04-13 Showa Denko Kk 研磨方法
JP4786899B2 (ja) * 2004-12-20 2011-10-05 Ｈｏｙａ株式会社 マスクブランクス用ガラス基板の製造方法，マスクブランクスの製造方法、反射型マスクブランクスの製造方法、露光用マスクの製造方法、反射型マスクの製造方法、及び半導体装置の製造方法
JP2006224233A (ja) * 2005-02-17 2006-08-31 Hoya Corp マスクブランクス用ガラス基板の製造方法及びマスクブランクスの製造方法
JP2006231471A (ja) * 2005-02-25 2006-09-07 Speedfam Co Ltd 両面ポリッシュ加工機とその定寸制御方法
JP4904027B2 (ja) * 2005-08-10 2012-03-28 ニッタ・ハース株式会社 研磨パッド
JP2007290050A (ja) * 2006-04-21 2007-11-08 Hamai Co Ltd 研磨方法及び平面研磨装置

Also Published As

Publication number Publication date
JP2010034462A (ja) 2010-02-12

Similar Documents

Publication Publication Date Title
KR101587226B1 (ko) 웨이퍼의 연마 방법 및 양면 연마 장치
JP4654275B2 (ja) 両面研磨装置
JP6146213B2 (ja) ワークの両面研磨装置及び両面研磨方法
JP4955624B2 (ja) 両面研磨装置
CN104428882B (zh) 半导体晶片的评价方法及制造方法
JP6222171B2 (ja) 定寸装置、研磨装置、及び研磨方法
JP6003800B2 (ja) ウェーハの両面研磨方法及び両面研磨システム
TWI752045B (zh) 研磨裝置
JP5028354B2 (ja) ウェーハの研磨方法
JP4420023B2 (ja) 半導体ウェーハの測定方法、その製造工程の管理方法、及び半導体ウェーハの製造方法
JP4429995B2 (ja) 半導体ウェーハの製造方法
JP6539467B2 (ja) 研削加工装置
KR20150053049A (ko) 웨이퍼의 양면 연마 방법
JP7466964B1 (ja) 基板厚測定装置及び基板厚測定方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100616

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100906

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20100906

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20100915

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20101124

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110106

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110301

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110421

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110712

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110905

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20111108

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120110

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20120120

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120228

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120315

R150 Certificate of patent or registration of utility model

Ref document number: 4955624

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150323

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250