JP4955570B2 - レティクルの設計パターンにおける欠陥を検出し、かつ(あるいは)ソートするためのコンピュータに実装された方法 - Google Patents
レティクルの設計パターンにおける欠陥を検出し、かつ(あるいは)ソートするためのコンピュータに実装された方法 Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
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Description
Claims (16)
- レティクル上に形成された設計パターンにおける欠陥をソートするためのコンピュータに実装された方法であって、
個々の欠陥に近接する領域の一つまたはそれ以上の特性および該個々の欠陥の一つまたはそれ以上の特性と共に、個々の欠陥と関連付けられる優先順位情報および欠陥属性を用いて検査データにおける興味ある欠陥をサーチする工程と、
一つまたはそれ以上の識別子を該興味ある欠陥に割り付ける工程と、
を含み、
該個々の欠陥に近接する領域の一つまたはそれ以上の特性は、該個々の欠陥の周りおよび後ろのバックグラウンド特徴を含み、該検査データは、レティクル上に形成された設計パターンにおける前記個々の欠陥を検出するために前記レティクルの画像同士を互いに比較することによって生成され、互いに比較された画像は、リソグラフィック変数の異なる値に対して生成され、
PWQタイプの検査により生成された前記優先順位情報は、前記個々の欠陥と前記個々の欠陥に関連するリソグラフィック変数の変調レベルの間の関係から導出され、
前記互いに比較される画像は、少なくとも一つの前記リソグラフィック変数のノミナル値で得られた画像と、少なくとも一つの前記リソグラフィック変数の変調値で得られた画像を含むことを特徴とする方法。 - 欠陥属性は、検査パラメータ情報、個々の欠陥の場所、サイズおよび強度の大きさを含む簡単な欠陥情報、および個々の欠陥の間の関係を含むこととする請求項1に記載の方法。
- 優先順位情報および欠陥属性に基づいて、個々の欠陥を、非欠陥性または関連性のないものとして濾過して取り除く工程をさらに含むこととする請求項1に記載の方法。
- 前記濾過して取り除く工程の基準は、ユーザによって選択され得ることとする請求項3に記載の方法。
- 個々の欠陥に近接する領域の一つまたはそれ以上の特性および該個々の欠陥の該一つまたはそれ以上の特性は、それぞれ、少なくとも一つの前記リソグラフィック変数のノミナル値で得られた画像および少なくとも一つの前記リソグラフィック変数の変調値で得られた画像から導出されることとする請求項1に記載の方法。
- 個々の欠陥に近接する領域の一つまたはそれ以上の特性は、ユーザによって選択されることとする請求項1に記載の方法。
- 個々の欠陥に近接する領域の一つまたはそれ以上の特性に基づいて、興味ある欠陥をグループ化する工程をさらに含むこととする請求項1に記載の方法。
- グループにおける個々の欠陥のうちの一つまたはそれ以上に近接する領域の一つまたはそれ以上の特性を分析して、該グループが、関連性のない欠陥グループであるかどうかを判定する工程をさらに含むこととする請求項7に記載の方法。
- 個々の欠陥に近接する領域の一つまたはそれ以上の特性に基づく興味ある欠陥を、興味ある欠陥の該一つまたはそれ以上の特性との組合せでグループ化する工程をさらに含むこととする請求項1に記載の方法。
- 個々の欠陥に近接する領域または該個々の欠陥それ自体の一つまたはそれ以上の特性に基づく欠陥の母集団における選択された欠陥に対する該個々の欠陥の類似性に基づいて、興味ある欠陥を再グループ化する工程をさらに含むこととする請求項9に記載の方法。
- 一つまたはそれ以上の識別子には、欠陥の分類が含まれることとする請求項1に記載の方法。
- 一つまたはそれ以上の識別子には、興味ある欠陥を将来の処理のために選択べきかどうかを識別するインジケータが含まれることとする請求項1に記載の方法。
- 興味ある欠陥を、レティクルの設計パターン・データで行なわれる設計ルール・チェックによって生成される検査データと比較して、該興味ある欠陥が、設計ルール・チェック欠陥に相関するかどうかを判定する工程をさらに含むこととする請求項1に記載の方法。
- 設計ルール・チェックの結果と相関しない欠陥を、興味ある欠陥から除去する工程をさらに含むこととする請求項13に記載の方法。
- 個々の欠陥に近接する領域の一つまたはそれ以上の特性は、架空の画像から抽出された該領域の一つまたはそれ以上の特性をさらに含むこととする請求項1に記載の方法。
- 個々の欠陥に近接する領域の一つまたはそれ以上の特性は、高解像度画像から判定される該領域の一つまたはそれ以上の特性をさらに含むこととする請求項1に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US11/005,658 US7729529B2 (en) | 2004-12-07 | 2004-12-07 | Computer-implemented methods for detecting and/or sorting defects in a design pattern of a reticle |
US11/005,658 | 2004-12-07 | ||
PCT/US2005/044695 WO2006063268A2 (en) | 2004-12-07 | 2005-12-07 | Computer-implemented methods for detecting and/or sorting defects in a design pattern of a reticle |
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JP2011157573A Division JP5567527B2 (ja) | 2004-12-07 | 2011-07-19 | レティクルの設計パターンにおける欠陥を検出し、かつ(あるいは)ソートするためのコンピュータに実装された方法 |
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JP2008523395A JP2008523395A (ja) | 2008-07-03 |
JP4955570B2 true JP4955570B2 (ja) | 2012-06-20 |
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JP2007545680A Active JP4955570B2 (ja) | 2004-12-07 | 2005-12-07 | レティクルの設計パターンにおける欠陥を検出し、かつ(あるいは)ソートするためのコンピュータに実装された方法 |
JP2011157573A Active JP5567527B2 (ja) | 2004-12-07 | 2011-07-19 | レティクルの設計パターンにおける欠陥を検出し、かつ(あるいは)ソートするためのコンピュータに実装された方法 |
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Country Status (5)
Country | Link |
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US (2) | US7729529B2 (ja) |
EP (1) | EP1820066A2 (ja) |
JP (2) | JP4955570B2 (ja) |
KR (2) | KR101296532B1 (ja) |
WO (1) | WO2006063268A2 (ja) |
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2004
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WO2006063268A3 (en) | 2006-08-03 |
KR101296532B1 (ko) | 2013-08-13 |
JP5567527B2 (ja) | 2014-08-06 |
KR20130028990A (ko) | 2013-03-20 |
JP2008523395A (ja) | 2008-07-03 |
US20100226562A1 (en) | 2010-09-09 |
WO2006063268B1 (en) | 2007-07-26 |
KR20070091633A (ko) | 2007-09-11 |
EP1820066A2 (en) | 2007-08-22 |
US20060291714A1 (en) | 2006-12-28 |
KR101345030B1 (ko) | 2013-12-26 |
US8111900B2 (en) | 2012-02-07 |
JP2012015529A (ja) | 2012-01-19 |
US7729529B2 (en) | 2010-06-01 |
WO2006063268A2 (en) | 2006-06-15 |
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