JP4954626B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4954626B2
JP4954626B2 JP2006200448A JP2006200448A JP4954626B2 JP 4954626 B2 JP4954626 B2 JP 4954626B2 JP 2006200448 A JP2006200448 A JP 2006200448A JP 2006200448 A JP2006200448 A JP 2006200448A JP 4954626 B2 JP4954626 B2 JP 4954626B2
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JP
Japan
Prior art keywords
transistor
circuit
electrode
electrically connected
output terminal
Prior art date
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Expired - Fee Related
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JP2006200448A
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English (en)
Japanese (ja)
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JP2007059043A (ja
JP2007059043A5 (enrdf_load_stackoverflow
Inventor
周祐 岩田
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2006200448A priority Critical patent/JP4954626B2/ja
Publication of JP2007059043A publication Critical patent/JP2007059043A/ja
Publication of JP2007059043A5 publication Critical patent/JP2007059043A5/ja
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Publication of JP4954626B2 publication Critical patent/JP4954626B2/ja
Expired - Fee Related legal-status Critical Current
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  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
JP2006200448A 2005-07-29 2006-07-24 半導体装置 Expired - Fee Related JP4954626B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006200448A JP4954626B2 (ja) 2005-07-29 2006-07-24 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005220530 2005-07-29
JP2005220530 2005-07-29
JP2006200448A JP4954626B2 (ja) 2005-07-29 2006-07-24 半導体装置

Publications (3)

Publication Number Publication Date
JP2007059043A JP2007059043A (ja) 2007-03-08
JP2007059043A5 JP2007059043A5 (enrdf_load_stackoverflow) 2009-09-03
JP4954626B2 true JP4954626B2 (ja) 2012-06-20

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ID=37922372

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006200448A Expired - Fee Related JP4954626B2 (ja) 2005-07-29 2006-07-24 半導体装置

Country Status (1)

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JP (1) JP4954626B2 (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7440313B2 (en) * 2006-11-17 2008-10-21 Freescale Semiconductor, Inc. Two-port SRAM having improved write operation
JP5064089B2 (ja) * 2007-04-12 2012-10-31 パナソニック株式会社 半導体集積回路
US8325511B2 (en) * 2010-04-21 2012-12-04 Texas Instruments Incorporated Retain-till-accessed power saving mode in high-performance static memories
JP2015172991A (ja) 2014-02-21 2015-10-01 株式会社半導体エネルギー研究所 半導体装置、電子部品、及び電子機器
CN115053293A (zh) 2020-02-10 2022-09-13 国立研究开发法人科学技术振兴机构 双稳态电路、电子电路、存储器电路和处理装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03192595A (ja) * 1989-12-21 1991-08-22 Nec Corp メモリセルとメモリ集積回路
JPH08147978A (ja) * 1994-11-17 1996-06-07 Fujitsu Ltd 半導体記憶装置
KR100383774B1 (ko) * 2000-01-26 2003-05-12 삼성전자주식회사 공통 인터페이스 방식의 메모리 장치들을 구비한 시스템
JP4353393B2 (ja) * 2001-06-05 2009-10-28 株式会社ルネサステクノロジ 半導体集積回路装置
JP2003123479A (ja) * 2001-10-12 2003-04-25 Matsushita Electric Ind Co Ltd 半導体記憶装置
JP4373154B2 (ja) * 2003-07-18 2009-11-25 株式会社半導体エネルギー研究所 メモリ回路およびそのメモリ回路を有する表示装置、電子機器
JP4330396B2 (ja) * 2003-07-24 2009-09-16 株式会社ルネサステクノロジ 半導体記憶装置

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Publication number Publication date
JP2007059043A (ja) 2007-03-08

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