JP4951464B2 - ポジ型レジスト組成物及びこれを用いたパターン形成方法。 - Google Patents

ポジ型レジスト組成物及びこれを用いたパターン形成方法。 Download PDF

Info

Publication number
JP4951464B2
JP4951464B2 JP2007279578A JP2007279578A JP4951464B2 JP 4951464 B2 JP4951464 B2 JP 4951464B2 JP 2007279578 A JP2007279578 A JP 2007279578A JP 2007279578 A JP2007279578 A JP 2007279578A JP 4951464 B2 JP4951464 B2 JP 4951464B2
Authority
JP
Japan
Prior art keywords
group
acid
resin
carbon atoms
examples
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007279578A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009109594A5 (enExample
JP2009109594A (ja
Inventor
克宏 山下
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2007279578A priority Critical patent/JP4951464B2/ja
Priority to US12/257,646 priority patent/US8017299B2/en
Publication of JP2009109594A publication Critical patent/JP2009109594A/ja
Publication of JP2009109594A5 publication Critical patent/JP2009109594A5/ja
Application granted granted Critical
Publication of JP4951464B2 publication Critical patent/JP4951464B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP2007279578A 2007-10-26 2007-10-26 ポジ型レジスト組成物及びこれを用いたパターン形成方法。 Expired - Fee Related JP4951464B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007279578A JP4951464B2 (ja) 2007-10-26 2007-10-26 ポジ型レジスト組成物及びこれを用いたパターン形成方法。
US12/257,646 US8017299B2 (en) 2007-10-26 2008-10-24 Positive resist composition and pattern forming method using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007279578A JP4951464B2 (ja) 2007-10-26 2007-10-26 ポジ型レジスト組成物及びこれを用いたパターン形成方法。

Publications (3)

Publication Number Publication Date
JP2009109594A JP2009109594A (ja) 2009-05-21
JP2009109594A5 JP2009109594A5 (enExample) 2010-09-09
JP4951464B2 true JP4951464B2 (ja) 2012-06-13

Family

ID=40583283

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007279578A Expired - Fee Related JP4951464B2 (ja) 2007-10-26 2007-10-26 ポジ型レジスト組成物及びこれを用いたパターン形成方法。

Country Status (2)

Country Link
US (1) US8017299B2 (enExample)
JP (1) JP4951464B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5171422B2 (ja) * 2008-06-19 2013-03-27 ルネサスエレクトロニクス株式会社 感光性組成物、これを用いたパターン形成方法、半導体素子の製造方法
JP5472072B2 (ja) 2010-01-13 2014-04-16 信越化学工業株式会社 ネガ型レジスト組成物及びパターン形成方法
JP5844613B2 (ja) * 2010-11-17 2016-01-20 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 感光性コポリマーおよびフォトレジスト組成物
US9921480B2 (en) * 2016-02-10 2018-03-20 Taiwan Semiconductor Manufacturing Co., Ltd Extreme ultraviolet photoresist
JP7279602B2 (ja) * 2019-09-26 2023-05-23 信越化学工業株式会社 化学増幅レジスト組成物及びパターン形成方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2937248B2 (ja) * 1992-02-18 1999-08-23 日本電信電話株式会社 ポジ型レジスト材料
US5561494A (en) 1992-06-15 1996-10-01 Fuji Photo Film Co., Ltd. Method of and apparatus for determining exposure amount in copying apparatus
JPH06301210A (ja) * 1993-04-15 1994-10-28 Fuji Photo Film Co Ltd ポジ型感光性組成物
JP3116751B2 (ja) * 1993-12-03 2000-12-11 ジェイエスアール株式会社 感放射線性樹脂組成物
US5683856A (en) * 1994-10-18 1997-11-04 Fuji Photo Film Co., Ltd. Positive-working photosensitive composition
US5561194A (en) 1995-03-29 1996-10-01 International Business Machines Corporation Photoresist composition including polyalkylmethacrylate co-polymer of polyhydroxystyrene
JP3578829B2 (ja) * 1995-04-18 2004-10-20 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． ポジ型感光性組成物
JP3293480B2 (ja) * 1995-07-20 2002-06-17 信越化学工業株式会社 化学増幅ポジ型レジスト材料
US5942367A (en) * 1996-04-24 1999-08-24 Shin-Etsu Chemical Co., Ltd. Chemically amplified positive resist composition, pattern forming method, and method for preparing polymer having a crosslinking group
JP2001027809A (ja) * 1999-07-13 2001-01-30 Nec Corp 化学増幅系ポジ型レジスト
JP2001107707A (ja) 1999-10-07 2001-04-17 Osaka Gas Co Ltd 消化ガス燃焼処理システム
US6492086B1 (en) 1999-10-08 2002-12-10 Shipley Company, L.L.C. Phenolic/alicyclic copolymers and photoresists
JP2001166478A (ja) 1999-12-03 2001-06-22 Jsr Corp 感放射線性樹脂組成物
JP2001166474A (ja) 1999-12-03 2001-06-22 Jsr Corp 感放射線性樹脂組成物
JP2003107707A (ja) 2001-09-28 2003-04-09 Clariant (Japan) Kk 化学増幅型ポジ型感放射線性樹脂組成物
JP4595275B2 (ja) 2001-09-28 2010-12-08 住友化学株式会社 化学増幅型ポジ型レジスト組成物
JP4324492B2 (ja) 2004-02-23 2009-09-02 富士フイルム株式会社 電子線、ｅｕｖ光又はｘ線用ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4338567B2 (ja) * 2004-03-26 2009-10-07 富士フイルム株式会社 Ｅｕｖ露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4468119B2 (ja) * 2004-09-08 2010-05-26 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
JP4774302B2 (ja) * 2005-01-24 2011-09-14 富士フイルム株式会社 液浸露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4579019B2 (ja) * 2005-03-17 2010-11-10 富士フイルム株式会社 ポジ型レジスト組成物及び該レジスト組成物を用いたパターン形成方法
JP5066405B2 (ja) * 2007-08-02 2012-11-07 富士フイルム株式会社 電子線、ｘ線又はｅｕｖ用レジスト組成物及び該組成物を用いたパターン形成方法
JP4961324B2 (ja) * 2007-10-26 2012-06-27 富士フイルム株式会社 電子線、ｘ線又はｅｕｖ用ポジ型レジスト組成物及びそれを用いたパターン形成方法

Also Published As

Publication number Publication date
US20090111053A1 (en) 2009-04-30
US8017299B2 (en) 2011-09-13
JP2009109594A (ja) 2009-05-21

Similar Documents

Publication Publication Date Title
JP4961324B2 (ja) 電子線、ｘ線又はｅｕｖ用ポジ型レジスト組成物及びそれを用いたパターン形成方法
KR101253105B1 (ko) 포지티브 감광성 조성물 및 이것을 사용한 패턴형성방법
JP4724465B2 (ja) 感光性組成物及び該感光性組成物を用いたパターン形成方法
JP5140354B2 (ja) 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法
JP5066405B2 (ja) 電子線、ｘ線又はｅｕｖ用レジスト組成物及び該組成物を用いたパターン形成方法
JP4452632B2 (ja) 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法
JP2009053518A (ja) 電子線、ｘ線またはｅｕｖ用レジスト組成物及び該レジスト組成物を用いたパターン形成方法
JP2007140188A (ja) ポジ型感光性組成物及びそれを用いたパターン形成方法
JP4484681B2 (ja) 感光性組成物及び該感光性組成物を用いたパターン形成方法
KR20090014116A (ko) 신규의 술포늄 화합물을 함유하는 레지스트 조성물, 그레지스트 조성물을 사용한 패턴 형성 방법, 및 신규의술포늄 화합물
JP2009069381A (ja) 電子線、ｘ線またはｅｕｖ用レジスト組成物及び該組成物を用いたパターン形成方法
JP5150296B2 (ja) 電子線、ｘ線またはｅｕｖ用ポジ型レジスト組成物及びこれを用いたパターン形成方法
JP5130164B2 (ja) ポジ型レジスト組成物及びこれを用いたパターン形成方法
JP4951464B2 (ja) ポジ型レジスト組成物及びこれを用いたパターン形成方法。
JP4677293B2 (ja) ポジ型感光性組成物及び該ポジ型感光性組成物を用いたパターン形成方法
JP4729377B2 (ja) ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP2007003619A (ja) 感光性組成物、該感光性組成物を用いたパターン形成方法及び該感光性組成物に用いる化合物
JP4742001B2 (ja) 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法
JP2007041200A (ja) ポジ型感光性組成物及びそれを用いたパターン形成方法
JP2006330099A (ja) 感光性組成物及び該感光性組成物を用いたパターン形成方法
JP2008107816A (ja) レジスト組成物およびこれを用いたパターン形成方法
JP2007072102A (ja) ポジ型感光性組成物及びそれを用いたパターン形成方法
JP2006251466A (ja) 感光性組成物及び該感光性組成物を用いたパターン形成方法
JP2006084924A (ja) レジスト組成物及び該レジスト組成物を用いたパターン形成方法
JP4682073B2 (ja) ポジ型感光性組成物及びそれを用いたパターン形成方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100722

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100722

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20111216

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120209

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120214

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120312

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150316

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4951464

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees