JP4950882B2 - 膜電極接合体の形成方法 - Google Patents
膜電極接合体の形成方法 Download PDFInfo
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- JP4950882B2 JP4950882B2 JP2007519531A JP2007519531A JP4950882B2 JP 4950882 B2 JP4950882 B2 JP 4950882B2 JP 2007519531 A JP2007519531 A JP 2007519531A JP 2007519531 A JP2007519531 A JP 2007519531A JP 4950882 B2 JP4950882 B2 JP 4950882B2
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- 238000004549 pulsed laser deposition Methods 0.000 claims description 2
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
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- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
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- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
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- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910002076 stabilized zirconia Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Chemical group 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Chemical group 0.000 description 1
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Description
Claims (6)
- 燃料電池のための膜電極接合体の形成方法であって、
複数の有底孔であるクローズドエンドチューブを表面に有するテンプレートを準備し、
前記クローズドエンドチューブを含む前記テンプレートの表面上に、無孔質、固体、かつ薄膜である第1電極層の第1堆積を行い、前記第1電極層上への薄膜状の固体酸化物電解質層の電解質堆積を行い、前記電解質層上への無孔質、固体、かつ薄膜である第2電極層の第2堆積を行い、前記第1電極層、前記固体酸化物電解質層及び前記第2電極層を含む厚みがおおよそ均一な膜電極接合体を前記テンプレート上に形成し、
前記膜電極接合体から前記テンプレートを除去することによって、
前記第2電極層の前記固体酸化物電解質層側と異なる面から内側へと延在する複数の分離したクローズドエンドチューブを前記膜電極接合体に形成したことを特徴とする燃料電池のための膜電極接合体の形成方法。 - 前記第1電極層及び前記第2電極層の一方はアノード−電解質界面から離れて対向するアノード表面を有するアノードであり、前記第1電極層及び前記第2電極層の他方はカソード−電解質界面から離れて対向するカソード表面を有するカソードであり、
前記アノードは燃料透過性であり、かつ前記カソードは酸化剤透過性であることを特徴とする請求項1に記載の燃料電池のための膜電極接合体の形成方法。 - 前記電解質堆積及び前記第2堆積のそれぞれが、スパッタリング、化学蒸着、パルスレーザ堆積、分子ビームエピタキシャル、蒸着、原子層成長からなる群から選択される堆積方法を含むことを特徴とする請求項1に記載の膜電極接合体の形成方法。
- 前記第1堆積は、リソグラフィ処理によって前記クローズドエンドチューブの輪郭が決定されたテンプレート上に前記第1電極層を堆積させることを含む請求項1に記載の膜電極接合体の形成方法。
- 前記アノード表面及び前記カソード表面の少なくとも一方の上に触媒を堆積させる触媒堆積を更に含むことを特徴とする請求項2に記載の膜電極接合体の形成方法。
- 前記触媒堆積は、アイランド成長をもたらす成長方法を実行する原子層成長を含み、前記触媒は分離されたアイランド状に配置されることを特徴とする請求項5に記載の膜電極接合体の形成方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US58476704P | 2004-06-30 | 2004-06-30 | |
US60/584,767 | 2004-06-30 | ||
PCT/US2005/023767 WO2006005066A2 (en) | 2004-06-30 | 2005-06-30 | Nanotubular solid oxide fuel cell |
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JP4950882B2 true JP4950882B2 (ja) | 2012-06-13 |
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EP (1) | EP1784881A4 (ja) |
JP (1) | JP4950882B2 (ja) |
KR (1) | KR20070046084A (ja) |
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- 2005-06-29 US US11/171,112 patent/US20060008696A1/en not_active Abandoned
- 2005-06-30 WO PCT/US2005/023767 patent/WO2006005066A2/en active Application Filing
- 2005-06-30 JP JP2007519531A patent/JP4950882B2/ja not_active Expired - Fee Related
- 2005-06-30 CA CA002570594A patent/CA2570594A1/en not_active Abandoned
- 2005-06-30 KR KR1020077001868A patent/KR20070046084A/ko not_active Application Discontinuation
- 2005-06-30 EP EP05768358A patent/EP1784881A4/en not_active Withdrawn
Cited By (1)
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PT106860A (pt) * | 2013-03-28 | 2014-09-29 | Cuf Químicos Ind S A | Conjunto elétrodos/eletrólito, reator e método para a aminação direta de hidrocarbonetos |
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CA2570594A1 (en) | 2006-01-12 |
US20060008696A1 (en) | 2006-01-12 |
EP1784881A2 (en) | 2007-05-16 |
JP2008505458A (ja) | 2008-02-21 |
WO2006005066A2 (en) | 2006-01-12 |
KR20070046084A (ko) | 2007-05-02 |
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WO2006005066A3 (en) | 2009-03-26 |
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