JP4942959B2 - レーザ照射装置およびレーザ照射方法 - Google Patents

レーザ照射装置およびレーザ照射方法 Download PDF

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JP4942959B2
JP4942959B2 JP2005219784A JP2005219784A JP4942959B2 JP 4942959 B2 JP4942959 B2 JP 4942959B2 JP 2005219784 A JP2005219784 A JP 2005219784A JP 2005219784 A JP2005219784 A JP 2005219784A JP 4942959 B2 JP4942959 B2 JP 4942959B2
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laser
laser beam
semiconductor film
irradiation
oscillator
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JP2006066904A5 (enExample
JP2006066904A (ja
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幸一郎 田中
良明 山本
貴嗣 小俣
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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JP2005219784A 2004-07-30 2005-07-29 レーザ照射装置およびレーザ照射方法 Expired - Fee Related JP4942959B2 (ja)

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JP2005219784A JP4942959B2 (ja) 2004-07-30 2005-07-29 レーザ照射装置およびレーザ照射方法

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JP2004224676 2004-07-30
JP2004224676 2004-07-30
JP2005219784A JP4942959B2 (ja) 2004-07-30 2005-07-29 レーザ照射装置およびレーザ照射方法

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JP2006066904A JP2006066904A (ja) 2006-03-09
JP2006066904A5 JP2006066904A5 (enExample) 2008-09-04
JP4942959B2 true JP4942959B2 (ja) 2012-05-30

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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007294082A (ja) * 2006-03-31 2007-11-08 Semiconductor Energy Lab Co Ltd Ｎａｎｄ型不揮発性メモリのデータ消去方法
US20090253273A1 (en) * 2006-06-21 2009-10-08 Hightec Systems Corporation Method of heat-treating semiconductor
US8047442B2 (en) * 2007-12-03 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5464972B2 (ja) * 2009-10-29 2014-04-09 住友重機械工業株式会社 レーザ加工装置
KR101391695B1 (ko) 2012-04-24 2014-05-07 삼성디스플레이 주식회사 레이저 결정화 장비 및 이를 이용한 박막 트랜지스터 기판 제조 방법
JP2023131583A (ja) * 2022-03-09 2023-09-22 株式会社ブイ・テクノロジー レーザアニール装置およびレーザアニール方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3477888B2 (ja) * 1995-02-07 2003-12-10 ソニー株式会社 薄膜半導体装置の製造方法
JPH09270393A (ja) * 1996-03-29 1997-10-14 Sanyo Electric Co Ltd レーザー光照射装置
JP4289816B2 (ja) * 2001-03-22 2009-07-01 シャープ株式会社 半導体装置及びその製造方法
JP3903761B2 (ja) * 2001-10-10 2007-04-11 株式会社日立製作所 レ−ザアニ−ル方法およびレ−ザアニ−ル装置
JP2003168645A (ja) * 2001-12-03 2003-06-13 Hitachi Ltd 半導体薄膜装置、その製造方法及び画像表示装置
JP4813743B2 (ja) * 2002-07-24 2011-11-09 株式会社 日立ディスプレイズ 画像表示装置の製造方法
JP2004128421A (ja) * 2002-10-07 2004-04-22 Semiconductor Energy Lab Co Ltd レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法

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