JP4936695B2 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
- Publication number
- JP4936695B2 JP4936695B2 JP2005267932A JP2005267932A JP4936695B2 JP 4936695 B2 JP4936695 B2 JP 4936695B2 JP 2005267932 A JP2005267932 A JP 2005267932A JP 2005267932 A JP2005267932 A JP 2005267932A JP 4936695 B2 JP4936695 B2 JP 4936695B2
- Authority
- JP
- Japan
- Prior art keywords
- opening
- semiconductor device
- layer
- monitor
- metal layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 85
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 239000010410 layer Substances 0.000 claims description 97
- 239000000758 substrate Substances 0.000 claims description 42
- 229910052751 metal Inorganic materials 0.000 claims description 35
- 239000002184 metal Substances 0.000 claims description 35
- 230000015572 biosynthetic process Effects 0.000 claims description 13
- 238000012544 monitoring process Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 9
- 239000011241 protective layer Substances 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 238000007747 plating Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005267932A JP4936695B2 (ja) | 2004-09-29 | 2005-09-15 | 半導体装置及びその製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004285030 | 2004-09-29 | ||
| JP2004285030 | 2004-09-29 | ||
| JP2005267932A JP4936695B2 (ja) | 2004-09-29 | 2005-09-15 | 半導体装置及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006128637A JP2006128637A (ja) | 2006-05-18 |
| JP2006128637A5 JP2006128637A5 (enExample) | 2008-10-16 |
| JP4936695B2 true JP4936695B2 (ja) | 2012-05-23 |
Family
ID=36722932
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005267932A Expired - Fee Related JP4936695B2 (ja) | 2004-09-29 | 2005-09-15 | 半導体装置及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4936695B2 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5026025B2 (ja) * | 2006-08-24 | 2012-09-12 | 株式会社フジクラ | 半導体装置 |
| JP2008053429A (ja) * | 2006-08-24 | 2008-03-06 | Fujikura Ltd | 半導体装置 |
| JP2011096918A (ja) * | 2009-10-30 | 2011-05-12 | Oki Semiconductor Co Ltd | 半導体装置および半導体装置の製造方法 |
| JP2012023238A (ja) * | 2010-07-15 | 2012-02-02 | Renesas Electronics Corp | 半導体装置、半導体装置の製造方法、及び半導体装置の設計方法 |
| JP5970736B2 (ja) * | 2012-04-27 | 2016-08-17 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3966679B2 (ja) * | 2000-09-12 | 2007-08-29 | 株式会社リコー | 半導体装置の製造方法 |
| JP2002217283A (ja) * | 2001-01-18 | 2002-08-02 | Sony Corp | 半導体装置 |
| JP2002217258A (ja) * | 2001-01-22 | 2002-08-02 | Hitachi Ltd | 半導体装置およびその測定方法、ならびに半導体装置の製造方法 |
| JP4212293B2 (ja) * | 2002-04-15 | 2009-01-21 | 三洋電機株式会社 | 半導体装置の製造方法 |
| JP4215571B2 (ja) * | 2002-06-18 | 2009-01-28 | 三洋電機株式会社 | 半導体装置の製造方法 |
| JP2004104046A (ja) * | 2002-09-13 | 2004-04-02 | Renesas Technology Corp | 半導体装置およびその製造方法 |
| JP4562371B2 (ja) * | 2002-10-30 | 2010-10-13 | 三洋電機株式会社 | 半導体装置の製造方法 |
-
2005
- 2005-09-15 JP JP2005267932A patent/JP4936695B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2006128637A (ja) | 2006-05-18 |
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