JP4936604B2 - プラズマ波を励起可能なイオン化金属堆積のための高密度プラズマ源 - Google Patents

プラズマ波を励起可能なイオン化金属堆積のための高密度プラズマ源 Download PDF

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Publication number
JP4936604B2
JP4936604B2 JP2001113163A JP2001113163A JP4936604B2 JP 4936604 B2 JP4936604 B2 JP 4936604B2 JP 2001113163 A JP2001113163 A JP 2001113163A JP 2001113163 A JP2001113163 A JP 2001113163A JP 4936604 B2 JP4936604 B2 JP 4936604B2
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Prior art keywords
target
magnetron
magnet
pole
plasma
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Expired - Lifetime
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Japanese (ja)
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JP2002088472A (ja
JP2002088472A5 (enExample
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フー ジアンミン
ゴパルラジャ プラブラム
チェン フューセン
シー． フォースター ジョン
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Applied Materials Inc
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Applied Materials Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP2001113163A 2000-04-11 2001-04-11 プラズマ波を励起可能なイオン化金属堆積のための高密度プラズマ源 Expired - Lifetime JP4936604B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/546,798 US6306265B1 (en) 1999-02-12 2000-04-11 High-density plasma for ionized metal deposition capable of exciting a plasma wave
US09/546798 2000-04-11

Publications (3)

Publication Number Publication Date
JP2002088472A JP2002088472A (ja) 2002-03-27
JP2002088472A5 JP2002088472A5 (enExample) 2008-05-29
JP4936604B2 true JP4936604B2 (ja) 2012-05-23

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JP2001113163A Expired - Lifetime JP4936604B2 (ja) 2000-04-11 2001-04-11 プラズマ波を励起可能なイオン化金属堆積のための高密度プラズマ源

Country Status (6)

Country Link
US (3) US6306265B1 (enExample)
EP (1) EP1146543A2 (enExample)
JP (1) JP4936604B2 (enExample)
KR (1) KR20010098491A (enExample)
SG (1) SG86460A1 (enExample)
TW (1) TW486720B (enExample)

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KR20010098491A (ko) 2001-11-08
US20050051424A1 (en) 2005-03-10
EP1146543A2 (en) 2001-10-17
JP2002088472A (ja) 2002-03-27
TW486720B (en) 2002-05-11
US20020008017A1 (en) 2002-01-24
US6306265B1 (en) 2001-10-23
US6790323B2 (en) 2004-09-14
SG86460A1 (en) 2002-02-19
US7335282B2 (en) 2008-02-26

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