JP4933036B2 - 差動容量素子、差動アンテナ素子及び差動共振素子 - Google Patents

差動容量素子、差動アンテナ素子及び差動共振素子 Download PDF

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Publication number
JP4933036B2
JP4933036B2 JP2004190375A JP2004190375A JP4933036B2 JP 4933036 B2 JP4933036 B2 JP 4933036B2 JP 2004190375 A JP2004190375 A JP 2004190375A JP 2004190375 A JP2004190375 A JP 2004190375A JP 4933036 B2 JP4933036 B2 JP 4933036B2
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Japan
Prior art keywords
shield plate
differential
lower electrode
semiconductor substrate
projected
Prior art date
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Expired - Fee Related
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JP2004190375A
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English (en)
Japanese (ja)
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JP2005159280A5 (https=
JP2005159280A (ja
Inventor
俊文 中谷
寿史 足立
佳代 中西
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Priority to JP2004190375A priority Critical patent/JP4933036B2/ja
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Publication of JP2005159280A5 publication Critical patent/JP2005159280A5/ja
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  • Semiconductor Integrated Circuits (AREA)
  • Filters And Equalizers (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
JP2004190375A 2003-07-03 2004-06-28 差動容量素子、差動アンテナ素子及び差動共振素子 Expired - Fee Related JP4933036B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004190375A JP4933036B2 (ja) 2003-07-03 2004-06-28 差動容量素子、差動アンテナ素子及び差動共振素子

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003191267 2003-07-03
JP2003191267 2003-07-03
JP2004190375A JP4933036B2 (ja) 2003-07-03 2004-06-28 差動容量素子、差動アンテナ素子及び差動共振素子

Publications (3)

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JP2005159280A JP2005159280A (ja) 2005-06-16
JP2005159280A5 JP2005159280A5 (https=) 2007-04-26
JP4933036B2 true JP4933036B2 (ja) 2012-05-16

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JP2004190375A Expired - Fee Related JP4933036B2 (ja) 2003-07-03 2004-06-28 差動容量素子、差動アンテナ素子及び差動共振素子

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6940707B2 (en) * 2003-07-03 2005-09-06 Matsushita Electric Industrial Co., Ltd. Differential capacitor, differential antenna element, and differential resonator
JP2014063991A (ja) 2012-08-31 2014-04-10 Toshiba Corp 半導体装置、高周波伝送装置および半導体製造方法
JP6030900B2 (ja) * 2012-09-21 2016-11-24 旭化成エレクトロニクス株式会社 チャージポンプ回路

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0752085B2 (ja) * 1989-10-11 1995-06-05 フジテコム株式会社 埋設金属管の深度測定装置
GB2301720B (en) * 1995-06-01 2000-05-24 Motorola Inc A MOS switching circuit
JP4047064B2 (ja) * 2001-05-17 2008-02-13 松下電器産業株式会社 高周波半導体装置

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