JP4921913B2 - 基板洗浄方法 - Google Patents

基板洗浄方法 Download PDF

Info

Publication number
JP4921913B2
JP4921913B2 JP2006271072A JP2006271072A JP4921913B2 JP 4921913 B2 JP4921913 B2 JP 4921913B2 JP 2006271072 A JP2006271072 A JP 2006271072A JP 2006271072 A JP2006271072 A JP 2006271072A JP 4921913 B2 JP4921913 B2 JP 4921913B2
Authority
JP
Japan
Prior art keywords
substrate
cleaning
nozzle
cleaning liquid
water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006271072A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008091637A (ja
JP2008091637A5 (enExample
Inventor
健太郎 松永
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2006271072A priority Critical patent/JP4921913B2/ja
Priority to US11/865,901 priority patent/US20080078427A1/en
Publication of JP2008091637A publication Critical patent/JP2008091637A/ja
Publication of JP2008091637A5 publication Critical patent/JP2008091637A5/ja
Application granted granted Critical
Publication of JP4921913B2 publication Critical patent/JP4921913B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02Cleaning by the force of jets or sprays
    • B08B3/024Cleaning by means of spray elements moving over the surface to be cleaned
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2006271072A 2006-10-02 2006-10-02 基板洗浄方法 Expired - Fee Related JP4921913B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006271072A JP4921913B2 (ja) 2006-10-02 2006-10-02 基板洗浄方法
US11/865,901 US20080078427A1 (en) 2006-10-02 2007-10-02 Substrate cleaning method and semiconductor device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006271072A JP4921913B2 (ja) 2006-10-02 2006-10-02 基板洗浄方法

Publications (3)

Publication Number Publication Date
JP2008091637A JP2008091637A (ja) 2008-04-17
JP2008091637A5 JP2008091637A5 (enExample) 2009-10-08
JP4921913B2 true JP4921913B2 (ja) 2012-04-25

Family

ID=39259935

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006271072A Expired - Fee Related JP4921913B2 (ja) 2006-10-02 2006-10-02 基板洗浄方法

Country Status (2)

Country Link
US (1) US20080078427A1 (enExample)
JP (1) JP4921913B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4926678B2 (ja) * 2006-12-04 2012-05-09 東京エレクトロン株式会社 液浸露光用洗浄装置および洗浄方法、ならびにコンピュータプログラムおよび記憶媒体
JP2009111186A (ja) * 2007-10-30 2009-05-21 Toshiba Corp 基板処理方法、基板搬送方法および基板搬送装置
JP5159738B2 (ja) * 2009-09-24 2013-03-13 株式会社東芝 半導体基板の洗浄方法および半導体基板の洗浄装置
US9698062B2 (en) * 2013-02-28 2017-07-04 Veeco Precision Surface Processing Llc System and method for performing a wet etching process
TWI697593B (zh) 2014-10-31 2020-07-01 美商維克儀器公司 用於執行濕蝕刻製程的系統及方法
US9870928B2 (en) 2014-10-31 2018-01-16 Veeco Precision Surface Processing Llc System and method for updating an arm scan profile through a graphical user interface
TWI738757B (zh) 2016-04-05 2021-09-11 美商維克儀器公司 經由化學的適應性峰化來控制蝕刻速率的裝置和方法
CN106057710B (zh) * 2016-08-02 2019-02-19 北京七星华创电子股份有限公司 改善气液两相雾化清洗均匀性的装置和方法
EP3590128A1 (en) 2017-03-03 2020-01-08 Veeco Precision Surface Processing LLC An apparatus and method for wafer thinning in advanced packaging applications

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002239434A (ja) * 2001-02-14 2002-08-27 Tokyo Electron Ltd 塗布膜形成装置および塗布膜形成方法
JP3655576B2 (ja) * 2001-07-26 2005-06-02 株式会社東芝 液膜形成方法及び半導体装置の製造方法
US20030192570A1 (en) * 2002-04-11 2003-10-16 Applied Materials, Inc. Method and apparatus for wafer cleaning
JP2004335542A (ja) * 2003-04-30 2004-11-25 Toshiba Corp 基板洗浄方法及び基板乾燥方法
JP2006024715A (ja) * 2004-07-07 2006-01-26 Toshiba Corp リソグラフィー装置およびパターン形成方法
JP4324527B2 (ja) * 2004-09-09 2009-09-02 東京エレクトロン株式会社 基板洗浄方法及び現像装置
JP4459774B2 (ja) * 2004-10-12 2010-04-28 東京エレクトロン株式会社 基板処理方法、基板処理装置およびコンピュータプログラム
US7476616B2 (en) * 2004-12-13 2009-01-13 Fsi International, Inc. Reagent activator for electroless plating

Also Published As

Publication number Publication date
JP2008091637A (ja) 2008-04-17
US20080078427A1 (en) 2008-04-03

Similar Documents

Publication Publication Date Title
US20220277968A1 (en) Substrate cleaning method, substrate cleaning system, and memory medium
US6864187B2 (en) Method of washing a semiconductor wafer
TW201628114A (zh) 液處理方法、記憶媒體及液處理裝置
US20080078427A1 (en) Substrate cleaning method and semiconductor device manufacturing method
US7926439B2 (en) Substrate processing apparatus
JP5680705B2 (ja) 基板処理方法
JPH11297652A (ja) 基板処理装置
JP2007019161A (ja) パターン形成方法及び被膜形成装置
JP5276559B2 (ja) 基板処理方法および基板処理装置
JP7470785B2 (ja) 洗浄装置および洗浄方法
US6090534A (en) Device and method of decreasing circular defects and charge buildup integrated circuit fabrication
US9937520B2 (en) Substrate treating method
JP2008249854A (ja) フォトマスクの洗浄方法
JP2006245381A (ja) 基板洗浄乾燥装置および方法
JP4919409B2 (ja) 半導体装置製造方法
US20180226268A1 (en) Semiconductor manufacturing apparatus and manufacturing method of semiconductor device
KR100766343B1 (ko) 기판 세정 건조 방법
JP2008258441A (ja) 基板処理方法及び基板処理装置
JPH1074686A (ja) 薬液処理方法、および、装置
JP2008016781A (ja) 基板処理方法および基板処理装置
JP2008171923A (ja) ウェハ洗浄装置、ウェハ洗浄方法
JP4492931B2 (ja) フォトレジストパターンの形成方法
KR100641540B1 (ko) 레지스트 코팅 장비 및 이를 세정하는 방법
KR100744277B1 (ko) 웨이퍼의 에지 비드 제거장치
KR102596300B1 (ko) 기판 세정 장치

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090825

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090825

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110307

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110412

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110613

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120110

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120203

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150210

Year of fee payment: 3

LAPS Cancellation because of no payment of annual fees