JP4917205B2 - 電気的に安定化された薄膜高温超伝導体及びその製造方法 - Google Patents
電気的に安定化された薄膜高温超伝導体及びその製造方法 Download PDFInfo
- Publication number
- JP4917205B2 JP4917205B2 JP2000565572A JP2000565572A JP4917205B2 JP 4917205 B2 JP4917205 B2 JP 4917205B2 JP 2000565572 A JP2000565572 A JP 2000565572A JP 2000565572 A JP2000565572 A JP 2000565572A JP 4917205 B2 JP4917205 B2 JP 4917205B2
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- Prior art keywords
- layer
- metal substrate
- thin film
- insulating buffer
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000010409 thin film Substances 0.000 title claims description 28
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000002887 superconductor Substances 0.000 title claims description 18
- 239000000758 substrate Substances 0.000 claims description 53
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 21
- 238000000151 deposition Methods 0.000 claims description 6
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 claims description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052727 yttrium Inorganic materials 0.000 claims description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 2
- 230000000699 topical effect Effects 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 230000002787 reinforcement Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910000856 hastalloy Inorganic materials 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/20—Permanent superconducting devices
- H10N60/203—Permanent superconducting devices comprising high-Tc ceramic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0661—Processes performed after copper oxide formation, e.g. patterning
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/30—Devices switchable between superconducting and normal states
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19836860.7 | 1998-08-14 | ||
| DE19836860A DE19836860A1 (de) | 1998-08-14 | 1998-08-14 | Elektrisch stabilisierter Dünnschicht-Hochtemperatursupraleiter sowie Verfahren zur Herstellung eines solchen Verfahrens |
| PCT/CH1999/000359 WO2000010208A1 (de) | 1998-08-14 | 1999-08-02 | Elektrisch stabilisierter dünnschicht-hochtemperatursupraleiter sowie verfahren zur herstellung eines solchen supraleiters |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002522927A JP2002522927A (ja) | 2002-07-23 |
| JP2002522927A5 JP2002522927A5 (enExample) | 2006-10-05 |
| JP4917205B2 true JP4917205B2 (ja) | 2012-04-18 |
Family
ID=7877522
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000565572A Expired - Fee Related JP4917205B2 (ja) | 1998-08-14 | 1999-08-02 | 電気的に安定化された薄膜高温超伝導体及びその製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6552415B1 (enExample) |
| EP (1) | EP1114471B1 (enExample) |
| JP (1) | JP4917205B2 (enExample) |
| AU (1) | AU4893899A (enExample) |
| DE (2) | DE19836860A1 (enExample) |
| DK (1) | DK1114471T3 (enExample) |
| WO (1) | WO2000010208A1 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19957981A1 (de) * | 1999-12-02 | 2001-06-07 | Abb Research Ltd | Hochtemperatursupraleiteranordnung und Verfahren zu deren Herstellung |
| DE10225935C5 (de) * | 2002-06-11 | 2011-10-06 | THEVA DüNNSCHICHTTECHNIK GMBH | Vorrichtung zum Leiten von Strom |
| DE10226391A1 (de) * | 2002-06-13 | 2004-01-08 | Siemens Ag | Resistiver Strombegrenzer wenigstens einer supraleitenden Leiterbahn |
| EP1383178B1 (en) * | 2002-07-15 | 2006-11-02 | Abb Research Ltd. | Superconducting fault current limiter |
| US7496390B2 (en) * | 2004-08-20 | 2009-02-24 | American Superconductor Corporation | Low ac loss filamentary coated superconductors |
| US7463915B2 (en) * | 2004-08-20 | 2008-12-09 | American Superconductor Corporation | Stacked filamentary coated superconductors |
| US7582328B2 (en) * | 2004-08-20 | 2009-09-01 | American Superconductor Corporation | Dropwise deposition of a patterned oxide superconductor |
| DE102004048648B4 (de) * | 2004-10-04 | 2006-08-10 | Siemens Ag | Vorrichtung zur Strombegrenzung vom resistiven Typ mit bandfömigem Hoch-Tc-Supraleiter |
| DE102004048647B4 (de) * | 2004-10-04 | 2006-08-10 | Siemens Ag | Resistive Strombegrenzereinrichtung mit bandförmiger Hoch-Tc-Supraleiterbahn |
| DE102004048646B4 (de) | 2004-10-04 | 2006-08-10 | Siemens Ag | Supraleitende Strombegrenzereinrichtung vom resistiven Typ mit bandförmiger Hoch-Tc-Supraleiterbahn |
| DE102004048644B4 (de) * | 2004-10-04 | 2006-08-10 | Siemens Ag | Vorrichtung zur resistiven Strombegrenzung mit bandförmiger Hoch-Tc -Supraleiterbahn |
| EP1830419B1 (de) | 2006-03-02 | 2009-07-01 | Theva Dünnschichttechnik GmbH | Resistiver Strombegrenzer |
| DE102006032702B3 (de) | 2006-07-14 | 2007-10-04 | Siemens Ag | Resistive supraleitende Strombegrenzeinrichtung mit bifilarer Spulenwicklung aus HTS-Bandleitern und Windungsabstandshalter |
| US7627356B2 (en) * | 2006-07-14 | 2009-12-01 | Superpower, Inc. | Multifilament AC tolerant conductor with striated stabilizer and devices incorporating the same |
| EP2284918A1 (en) * | 2009-08-13 | 2011-02-16 | Nexans | High temperature superconductor, in particular improved coated conductor |
| JP5597516B2 (ja) * | 2010-10-22 | 2014-10-01 | 株式会社フジクラ | 超電導線材の製造方法 |
| US9029296B2 (en) * | 2012-02-02 | 2015-05-12 | Polyvalor, Limited Partnership | Increased normal zone propagation velocity in superconducting segments |
| EP2991126B1 (de) | 2014-08-25 | 2016-10-05 | Theva Dünnschichttechnik GmbH | Verfahren und Vorrichtung zum Herstellen eines Hochtemperatur-Supraleiters |
| DE102016217671A1 (de) | 2016-09-15 | 2018-03-15 | Siemens Aktiengesellschaft | Supraleitender Strombegrenzer |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6474770A (en) * | 1987-09-17 | 1989-03-20 | Fujitsu Ltd | Structure of contact between superconductive film and normal conductive film |
| JPH01171249A (ja) * | 1987-12-25 | 1989-07-06 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| JPH01186657A (ja) * | 1988-01-14 | 1989-07-26 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| JPH08335725A (ja) * | 1995-06-09 | 1996-12-17 | Nec Corp | 超伝導層間のコンタクト構造及びその製造方法 |
| JPH09186300A (ja) * | 1995-12-27 | 1997-07-15 | Lg Semicon Co Ltd | 半導体メモリセルのキャパシタ構造およびその形成方法 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU610260B2 (en) | 1987-10-16 | 1991-05-16 | Furukawa Electric Co. Ltd., The | Oxide superconductor shaped body and method of manufacturing the same |
| EP0339801B1 (en) | 1988-03-31 | 1993-01-27 | Mitsui Kinzoku Kogyo Kabushiki Kaisha | Superconductive ceramics laminates and method for production thereof |
| JPH043477A (ja) | 1990-04-19 | 1992-01-08 | Furukawa Electric Co Ltd:The | セラミックス超電導限流器 |
| JP2968557B2 (ja) | 1990-05-14 | 1999-10-25 | 株式会社フジクラ | 酸化物超電導導体用基材 |
| CA2056309C (en) | 1990-11-29 | 1998-06-23 | Hideki Shimizu | Oxide superconductor magnetic shielding material and method of manufacturing the same |
| JPH05226706A (ja) | 1992-02-17 | 1993-09-03 | Mitsubishi Electric Corp | 限流導体 |
| JP3331610B2 (ja) | 1992-02-25 | 2002-10-07 | 三菱電機株式会社 | 超電導素子 |
| JPH05251758A (ja) | 1992-03-04 | 1993-09-28 | Mitsubishi Electric Corp | 酸化物超電導限流導体の製造方法 |
| US6051846A (en) * | 1993-04-01 | 2000-04-18 | The United States Of America As Represented By The Secretary Of The Navy | Monolithic integrated high-Tc superconductor-semiconductor structure |
| US5593918A (en) * | 1994-04-22 | 1997-01-14 | Lsi Logic Corporation | Techniques for forming superconductive lines |
| JPH0883932A (ja) | 1994-09-09 | 1996-03-26 | Sumitomo Electric Ind Ltd | 限流素子 |
| DE4434819C5 (de) * | 1994-09-29 | 2004-05-27 | Abb Research Ltd. | Vorrichtung zur Strombegrenzung |
| DE19520205A1 (de) * | 1995-06-01 | 1996-12-05 | Siemens Ag | Resistive Strombegrenzungseinrichtung unter Verwendung von Hoch-T¶c¶Supraleitermaterial |
| JPH09172206A (ja) | 1995-12-18 | 1997-06-30 | Furukawa Electric Co Ltd:The | 超電導限流器 |
| DE19634424C2 (de) * | 1996-08-26 | 1998-07-02 | Abb Research Ltd | Verfahren zur Herstellung eines Strombegrenzers mit einem Hochtemperatursupraleiter |
-
1998
- 1998-08-14 DE DE19836860A patent/DE19836860A1/de not_active Withdrawn
-
1999
- 1999-08-02 AU AU48938/99A patent/AU4893899A/en not_active Abandoned
- 1999-08-02 WO PCT/CH1999/000359 patent/WO2000010208A1/de not_active Ceased
- 1999-08-02 EP EP99932598A patent/EP1114471B1/de not_active Expired - Lifetime
- 1999-08-02 DK DK99932598T patent/DK1114471T3/da active
- 1999-08-02 JP JP2000565572A patent/JP4917205B2/ja not_active Expired - Fee Related
- 1999-08-02 US US09/762,790 patent/US6552415B1/en not_active Expired - Fee Related
- 1999-08-02 DE DE59912022T patent/DE59912022D1/de not_active Expired - Lifetime
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6474770A (en) * | 1987-09-17 | 1989-03-20 | Fujitsu Ltd | Structure of contact between superconductive film and normal conductive film |
| JPH01171249A (ja) * | 1987-12-25 | 1989-07-06 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| JPH01186657A (ja) * | 1988-01-14 | 1989-07-26 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| JPH08335725A (ja) * | 1995-06-09 | 1996-12-17 | Nec Corp | 超伝導層間のコンタクト構造及びその製造方法 |
| JPH09186300A (ja) * | 1995-12-27 | 1997-07-15 | Lg Semicon Co Ltd | 半導体メモリセルのキャパシタ構造およびその形成方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002522927A (ja) | 2002-07-23 |
| WO2000010208A1 (de) | 2000-02-24 |
| DE59912022D1 (de) | 2005-06-09 |
| AU4893899A (en) | 2000-03-06 |
| DK1114471T3 (da) | 2005-08-29 |
| EP1114471B1 (de) | 2005-05-04 |
| US6552415B1 (en) | 2003-04-22 |
| DE19836860A1 (de) | 2000-02-17 |
| EP1114471A1 (de) | 2001-07-11 |
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