JP4916647B2 - 外部共振器半導体レーザーおよびその製造方法 - Google Patents
外部共振器半導体レーザーおよびその製造方法 Download PDFInfo
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- JP4916647B2 JP4916647B2 JP2004151886A JP2004151886A JP4916647B2 JP 4916647 B2 JP4916647 B2 JP 4916647B2 JP 2004151886 A JP2004151886 A JP 2004151886A JP 2004151886 A JP2004151886 A JP 2004151886A JP 4916647 B2 JP4916647 B2 JP 4916647B2
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4215—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical elements being wavelength selective optical elements, e.g. variable wavelength optical modules or wavelength lockers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
- G02B6/293—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
- G02B6/29346—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means operating by wave or beam interference
- G02B6/29358—Multiple beam interferometer external to a light guide, e.g. Fabry-Pérot, etalon, VIPA plate, OTDL plate, continuous interferometer, parallel plate resonator
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
- G02B6/293—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
- G02B6/29379—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means characterised by the function or use of the complete device
- G02B6/29395—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means characterised by the function or use of the complete device configurable, e.g. tunable or reconfigurable
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0651—Mode control
- H01S5/0653—Mode suppression, e.g. specific multimode
- H01S5/0654—Single longitudinal mode emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1039—Details on the cavity length
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Semiconductor Lasers (AREA)
- Lasers (AREA)
- Optical Filters (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
Description
本発明の一つの重要な特徴は、マイクロ機械加工エタロンのコンパクトさと、それに伴う光共振器103の光路長の短縮が、より最適なモードの間隔あけ、およびよりシンプルなモード選択手段を容易化することである。本発明のこれらの態様が、以下のモデリングおよびシミュレーション実施例において更に具体化される。
i. dlas=250ミクロンの物理的長さと約850ミクロンの光路長を有する端面発光型レーザー102。
ii. Spinel製で、約720ミクロンの光路長を有し、直径が400ミクロンの、反射防止膜被覆球面レンズ116。
iii. 10層から20層の窒化ケイ素および二酸化ケイ素の層からなるチューニング可能なエタロン120であって、ウェーハの周辺領域から形成されたフレームに支持され、そこから例えば図6gに示されているようなエタロン120が形成されることを特徴とするエタロン。結果的に得られるエタロンの光路長は約500ミクロンであり、この厚みは、そこにエタロン120が形成されるシリコンウェーハの挿入を可能に為すスペースに基づくものであることに留意すべきである。このレーザービームの光路は、シリコン基体に形成された凹部に制限されているので、その光路がシリコンを透過することによって増大することはない。
102 レーザー発振エレメント
103 レーザー光共振器
104、106 レーザー発振エレメント端部表面
105 レーザー発振エレメント102の外側の共振器部分
108、110 反射鏡
112 反射防止膜
114 レーザー出力ビーム
116 レンズ
118 コリメーティングレンズ
120 マイクロ製造エタロン
124 透明な平板もしくはエアーギャップ
202、204 薄膜多層誘電体積層膜
206 平板
302 透過ピーク
304 反射ベースライン
401 レーザーモード
402 半導体レーザー102の利得スペクトル
403 エタロンの透過帯域応答スペクトル
403a エタロン120を傾けることに対応する発光スペクトル
404 波長モード
405 レーザー出力
405a エタロン120を傾けることに対応するレーザー出力
501 レーザーの利得スペクトル
503、503a エタロンの透過応答スペクトル
502、504 出力発光ピーク
506、508 レーザー出力ピーク
600 エタロン
602 基体
603 凹部の底部
604 凹部
605 勾配付きの側壁
606 スペーサー層の前面
607 スペーサー層外側表面(スペーサー層の前面)
608 スペーサー層
612、614 誘電体積層膜
616 エアーギャップ
618 穴
620 前側の誘電体積層膜層612の一部
624 導電性電極
626 対電極
700 エタロン
702、706 基体
703 基体702の一方の側
705 基体706の一方の側
704、710 誘電体積層膜
712 内部空隙またはエアーギャップ
714、716 凹部
718、720 誘電体積層膜
902 レーザー
904 コリメーティングレンズ
906 ミラー
908 被覆ファセット
910 光共振器
912 レーザービーム出力
914 ビームスプリッター
916 光検出器
918 パルス計数回路
920 制御装置
922 サーキットリー
924 マイクロ機械加工エタロン
926 第二のビームスプリッター
928 光フィルター
930 第二光検出器
Claims (9)
- マイクロ製造エタロンを製造するための方法であって、当該方法が:
第一および第二の対向する表面を有する結晶性基体を提供するステップ;
上記基体の該第一表面上にスペーサー層を提供するステップであって、該スペーサー層が外側表面を有する、スペーサー層の提供ステップ;
上記基体を通って該第一表面から該第二表面まで延びる凹部を形成するステップであって、該凹部が上記スペーサー層の露出されている部分に隣接した底部を有する、凹部の形成ステップ;および
上記スペーサー層の該外側表面上に第一の干渉フィルター、および上記スペーサー層の該露出されている部分上に第二の干渉フィルターの配置を同じプロセスで行うことにより、前記干渉フィルター間にエタロンを提供するステップ;
を含む、マイクロ製造エタロンの製造方法。 - 前記凹部に隣接した上記スペーサー層の部分を取り除き、上記干渉フィルター間にギャ
ップを提供するステップを含む、請求項1記載のマイクロ製造エタロンの製造方法。 - 上記ギャップに近接した位置に導電性電極を提供するステップであって、前記電極が、該ギャップの間隔を変化させるべく、反発力もしくは引力を提供するように構成されている、導電性電極の提供ステップを含む、請求項2記載のマイクロ製造エタロンの製造方法。
- 上記凹部の形成ステップが前記基体の異方性エッチングを含む、請求項1から3のいずれか1項記載のマイクロ製造エタロンの製造方法。
- マイクロ製造エタロンであって、当該エタロンが:
第一および第二の対向する表面を有する結晶性基体;
上記基体の該第一表面上に配置されたスペーサー層であって、該スペーサー層が外側表面を有している、スペーサー層;
上記基体を通って該第一表面から該第二表面まで延びる凹部であって、該凹部が上記スペーサー層の露出されている部分に隣接した底部を有する、凹部;並びに
上記スペーサー層の該外側表面上に配置された第一の干渉フィルター、および、上記スペーサー層の該露出されている部分上に配置された第二の干渉フィルターであって、前記干渉フィルター間にエタロンを提供する、第一および第二の干渉フィルター;
を含み、前記第一の干渉フィルターおよび第二の干渉フィルターの配置が同じプロセスで行われている、
マイクロ製造エタロン。 - 外部共振器半導体レーザーであって、当該レーザーが:
光放射線のソースを提供するためのレーザー利得媒体;
前記利得媒体と光学的に連通した状態で配置された外部光共振器であって、該共振器は、単一波長選択装置が単一の縦レーザー発振モードを選択し且つ維持できるようにするのに充分に短い寸法である、外部光共振器;および
単一の縦レーザー発振モードを選択し且つ維持すべく、前記外部光共振器内に配置された単一波長選択装置;
を含み、前記単一波長選択装置が請求項5に記載のマイクロ製造エタロンを含む、外部共振器半導体レーザー。 - 前記エタロンが、第一の縦モードもしくは第二の縦モードにおけるレーザー発振をもたらすため、第一の寸法から第二の寸法へ調節可能な可変式スペースギャップを含む、請求項6記載の外部共振器半導体レーザー。
- 前記エタロンが、上記ギャップの間隔を変更するための反発力もしくは引力を提供するために該ギャップに近接して配置された電極を含む、請求項7記載の外部共振器半導体レーザー。
- 前記波長選択装置が単結晶シリコンを含む、請求項6から8のいずれか1項記載の外部共振器半導体レーザー。
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
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US47269203P | 2003-05-23 | 2003-05-23 | |
US47291403P | 2003-05-23 | 2003-05-23 | |
US47287303P | 2003-05-23 | 2003-05-23 | |
US60/472692 | 2003-05-23 | ||
US60/472873 | 2003-05-23 | ||
US60/472914 | 2003-05-23 |
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JP2004348136A JP2004348136A (ja) | 2004-12-09 |
JP4916647B2 true JP4916647B2 (ja) | 2012-04-18 |
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JP2004151886A Expired - Fee Related JP4916647B2 (ja) | 2003-05-23 | 2004-05-21 | 外部共振器半導体レーザーおよびその製造方法 |
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US (2) | US7294280B2 (ja) |
EP (1) | EP1480302B1 (ja) |
JP (1) | JP4916647B2 (ja) |
DE (1) | DE602004007432T2 (ja) |
TW (1) | TWI275222B (ja) |
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-
2004
- 2004-05-21 EP EP04252984A patent/EP1480302B1/en not_active Expired - Fee Related
- 2004-05-21 TW TW093114389A patent/TWI275222B/zh not_active IP Right Cessation
- 2004-05-21 DE DE602004007432T patent/DE602004007432T2/de not_active Expired - Lifetime
- 2004-05-21 JP JP2004151886A patent/JP4916647B2/ja not_active Expired - Fee Related
- 2004-05-24 US US10/860,810 patent/US7294280B2/en active Active
-
2007
- 2007-11-13 US US11/983,843 patent/US20080285601A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
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EP1480302A3 (en) | 2005-05-25 |
DE602004007432D1 (de) | 2007-08-23 |
DE602004007432T2 (de) | 2008-03-13 |
JP2004348136A (ja) | 2004-12-09 |
US20080285601A1 (en) | 2008-11-20 |
TW200509488A (en) | 2005-03-01 |
US20040258107A1 (en) | 2004-12-23 |
EP1480302A2 (en) | 2004-11-24 |
TWI275222B (en) | 2007-03-01 |
EP1480302B1 (en) | 2007-07-11 |
US7294280B2 (en) | 2007-11-13 |
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