JP4915282B2 - Ｉｉｉ族窒化物半導体成長用の下地基板およびｉｉｉ族窒化物半導体の成長方法 - Google Patents

Ｉｉｉ族窒化物半導体成長用の下地基板およびｉｉｉ族窒化物半導体の成長方法 Download PDF

Info

Publication number
JP4915282B2
JP4915282B2 JP2007139839A JP2007139839A JP4915282B2 JP 4915282 B2 JP4915282 B2 JP 4915282B2 JP 2007139839 A JP2007139839 A JP 2007139839A JP 2007139839 A JP2007139839 A JP 2007139839A JP 4915282 B2 JP4915282 B2 JP 4915282B2
Authority
JP
Japan
Prior art keywords
crystal growth
growth surface
crystal
nitride semiconductor
group iii
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2007139839A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008290919A (ja
JP2008290919A5 (ru
Inventor
健史 藤戸
裕文 長岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Original Assignee
Mitsubishi Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Chemical Corp filed Critical Mitsubishi Chemical Corp
Priority to JP2007139839A priority Critical patent/JP4915282B2/ja
Publication of JP2008290919A publication Critical patent/JP2008290919A/ja
Publication of JP2008290919A5 publication Critical patent/JP2008290919A5/ja
Application granted granted Critical
Publication of JP4915282B2 publication Critical patent/JP4915282B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP2007139839A 2007-05-28 2007-05-28 Ｉｉｉ族窒化物半導体成長用の下地基板およびｉｉｉ族窒化物半導体の成長方法 Active JP4915282B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007139839A JP4915282B2 (ja) 2007-05-28 2007-05-28 Ｉｉｉ族窒化物半導体成長用の下地基板およびｉｉｉ族窒化物半導体の成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007139839A JP4915282B2 (ja) 2007-05-28 2007-05-28 Ｉｉｉ族窒化物半導体成長用の下地基板およびｉｉｉ族窒化物半導体の成長方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011176551A Division JP2012006830A (ja) 2011-08-12 2011-08-12 Ｉｉｉ族窒化物半導体成長用の下地基板およびｉｉｉ族窒化物半導体の成長方法

Publications (3)

Publication Number Publication Date
JP2008290919A JP2008290919A (ja) 2008-12-04
JP2008290919A5 JP2008290919A5 (ru) 2010-04-15
JP4915282B2 true JP4915282B2 (ja) 2012-04-11

Family

ID=40166044

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007139839A Active JP4915282B2 (ja) 2007-05-28 2007-05-28 Ｉｉｉ族窒化物半導体成長用の下地基板およびｉｉｉ族窒化物半導体の成長方法

Country Status (1)

Country Link
JP (1) JP4915282B2 (ru)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012006830A (ja) * 2011-08-12 2012-01-12 Mitsubishi Chemicals Corp Ｉｉｉ族窒化物半導体成長用の下地基板およびｉｉｉ族窒化物半導体の成長方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4565042B1 (ja) * 2009-04-22 2010-10-20 株式会社トクヤマ Ｉｉｉ族窒化物結晶基板の製造方法
JP5601033B2 (ja) * 2010-05-28 2014-10-08 三菱化学株式会社 窒化物単結晶の製造方法及び窒化物単結晶
JP2019176124A (ja) * 2018-03-26 2019-10-10 日亜化学工業株式会社 半導体装置の製造方法、及び、半導体装置
US11101404B2 (en) 2018-03-26 2021-08-24 Nichia Corporation Method for manufacturing semiconductor device and semiconductor device
JP6963195B2 (ja) * 2019-02-28 2021-11-05 日亜化学工業株式会社 半導体素子の製造方法
US11094536B2 (en) 2019-02-28 2021-08-17 Nichia Corporation Method of manufacturing semiconductor elements
JP7016032B2 (ja) 2019-09-24 2022-02-04 日亜化学工業株式会社 半導体素子の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4031648B2 (ja) * 2001-01-29 2008-01-09 松下電器産業株式会社 化合物半導体ウエハの製造方法
JP4084541B2 (ja) * 2001-02-14 2008-04-30 豊田合成株式会社 半導体結晶及び半導体発光素子の製造方法
JP4459723B2 (ja) * 2004-06-08 2010-04-28 株式会社デンソー 炭化珪素単結晶、炭化珪素基板およびその製造方法
JP4915128B2 (ja) * 2005-04-11 2012-04-11 日亜化学工業株式会社 窒化物半導体ウエハ及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012006830A (ja) * 2011-08-12 2012-01-12 Mitsubishi Chemicals Corp Ｉｉｉ族窒化物半導体成長用の下地基板およびｉｉｉ族窒化物半導体の成長方法

Also Published As

Publication number Publication date
JP2008290919A (ja) 2008-12-04

Similar Documents

Publication Publication Date Title
JP4537484B2 (ja) 高品質化合物半導体材料を製造するためのナノ構造適応層及びｈｖｐｅを使用する成長法
US9112096B2 (en) Method for producing group-III nitride semiconductor crystal, group-III nitride semiconductor substrate, and semiconductor light emitting device
JP4581490B2 (ja) Ｉｉｉ−ｖ族窒化物系半導体自立基板の製造方法、及びｉｉｉ−ｖ族窒化物系半導体の製造方法
JP4915282B2 (ja) Ｉｉｉ族窒化物半導体成長用の下地基板およびｉｉｉ族窒化物半導体の成長方法
TWI429797B (zh) 第 iii 族氮化物半導體結晶基板及半導體元件
JP6031733B2 (ja) ＧａＮ結晶の製造方法
JP5472513B2 (ja) 単結晶基板、それを用いて得られるｉｉｉ族窒化物結晶及びｉｉｉ族窒化物結晶の製造方法
JP4797793B2 (ja) 窒化物半導体結晶の製造方法
KR20120036816A (ko) 질화물 반도체 결정 및 그 제조 방법
JP2008297175A (ja) ＧａＮ結晶の成長方法およびＧａＮ結晶基板
US9234299B2 (en) Method for producing group III nitride single crystal
JP2012136414A (ja) Ｉｉｉ族窒化物半導体基板、半導体発光デバイスおよびその製造方法
JP2014047097A (ja) 窒化物半導体結晶の製造方法
JP5040708B2 (ja) 窒化物半導体結晶の製造方法
JP2013227202A (ja) 周期表第１３族金属窒化物半導体結晶の製造方法、および、当該製造方法によって得られた周期表第１３族金属窒化物半導体結晶を用いた半導体発光デバイス
JP2013075791A (ja) Ｉｉｉ族窒化物半導体結晶の製造方法、ｉｉｉ族窒化物半導体基板およびｉｉｉ族窒化物半導体結晶
JP2012006830A (ja) Ｉｉｉ族窒化物半導体成長用の下地基板およびｉｉｉ族窒化物半導体の成長方法
JP2008308356A (ja) ＧａＮ結晶の成長方法およびＧａＮ結晶基板
JP4665837B2 (ja) 窒化物半導体基板の製造方法
WO2020241761A1 (ja) ＧａＮ基板ウエハおよびその製造方法
KR101094409B1 (ko) 질화갈륨 단결정 후막의 제조 방법
JP5601033B2 (ja) 窒化物単結晶の製造方法及び窒化物単結晶
JP2013227201A (ja) 周期表第１３族金属窒化物半導体結晶の製造方法および周期表第１３族金属窒化物半導体結晶の製造装置
JP2021130585A (ja) 窒化ガリウム結晶の製造方法
JP5765033B2 (ja) 第１３族窒化物結晶の製造方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100226

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100226

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110607

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110614

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110812

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20111227

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120109

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150203

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4915282

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350