JP4915282B2 - Ｉｉｉ族窒化物半導体成長用の下地基板およびｉｉｉ族窒化物半導体の成長方法 - Google Patents

Ｉｉｉ族窒化物半導体成長用の下地基板およびｉｉｉ族窒化物半導体の成長方法 Download PDF

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JP4915282B2
JP4915282B2 JP2007139839A JP2007139839A JP4915282B2 JP 4915282 B2 JP4915282 B2 JP 4915282B2 JP 2007139839 A JP2007139839 A JP 2007139839A JP 2007139839 A JP2007139839 A JP 2007139839A JP 4915282 B2 JP4915282 B2 JP 4915282B2
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crystal growth
growth surface
crystal
nitride semiconductor
group iii
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JP2008290919A5 (de
JP2008290919A (ja
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健史 藤戸
裕文 長岡
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Mitsubishi Chemical Corp
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Mitsubishi Chemical Corp
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JP2007139839A 2007-05-28 2007-05-28 Ｉｉｉ族窒化物半導体成長用の下地基板およびｉｉｉ族窒化物半導体の成長方法 Active JP4915282B2 (ja)

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JP2007139839A JP4915282B2 (ja) 2007-05-28 2007-05-28 Ｉｉｉ族窒化物半導体成長用の下地基板およびｉｉｉ族窒化物半導体の成長方法

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JP2008290919A5 JP2008290919A5 (de) 2010-04-15
JP4915282B2 true JP4915282B2 (ja) 2012-04-11

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012006830A (ja) * 2011-08-12 2012-01-12 Mitsubishi Chemicals Corp Ｉｉｉ族窒化物半導体成長用の下地基板およびｉｉｉ族窒化物半導体の成長方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
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JP4565042B1 (ja) * 2009-04-22 2010-10-20 株式会社トクヤマ Ｉｉｉ族窒化物結晶基板の製造方法
JP5601033B2 (ja) * 2010-05-28 2014-10-08 三菱化学株式会社 窒化物単結晶の製造方法及び窒化物単結晶
JP2019176124A (ja) * 2018-03-26 2019-10-10 日亜化学工業株式会社 半導体装置の製造方法、及び、半導体装置
US11101404B2 (en) 2018-03-26 2021-08-24 Nichia Corporation Method for manufacturing semiconductor device and semiconductor device
US11094536B2 (en) 2019-02-28 2021-08-17 Nichia Corporation Method of manufacturing semiconductor elements
JP6963195B2 (ja) * 2019-02-28 2021-11-05 日亜化学工業株式会社 半導体素子の製造方法
JP7016032B2 (ja) 2019-09-24 2022-02-04 日亜化学工業株式会社 半導体素子の製造方法

Family Cites Families (4)

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JP4031648B2 (ja) * 2001-01-29 2008-01-09 松下電器産業株式会社 化合物半導体ウエハの製造方法
JP4084541B2 (ja) * 2001-02-14 2008-04-30 豊田合成株式会社 半導体結晶及び半導体発光素子の製造方法
JP4459723B2 (ja) * 2004-06-08 2010-04-28 株式会社デンソー 炭化珪素単結晶、炭化珪素基板およびその製造方法
JP4915128B2 (ja) * 2005-04-11 2012-04-11 日亜化学工業株式会社 窒化物半導体ウエハ及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012006830A (ja) * 2011-08-12 2012-01-12 Mitsubishi Chemicals Corp Ｉｉｉ族窒化物半導体成長用の下地基板およびｉｉｉ族窒化物半導体の成長方法

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