JP4913254B2 - 自発光装置 - Google Patents
自発光装置 Download PDFInfo
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- JP4913254B2 JP4913254B2 JP2011148422A JP2011148422A JP4913254B2 JP 4913254 B2 JP4913254 B2 JP 4913254B2 JP 2011148422 A JP2011148422 A JP 2011148422A JP 2011148422 A JP2011148422 A JP 2011148422A JP 4913254 B2 JP4913254 B2 JP 4913254B2
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- 239000000463 material Substances 0.000 claims description 25
- 238000002347 injection Methods 0.000 claims description 15
- 239000007924 injection Substances 0.000 claims description 15
- 239000011261 inert gas Substances 0.000 claims description 8
- 125000006850 spacer group Chemical group 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229920003023 plastic Polymers 0.000 claims description 2
- 239000004033 plastic Substances 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 85
- 239000000872 buffer Substances 0.000 description 17
- 239000007789 gas Substances 0.000 description 11
- 239000010408 film Substances 0.000 description 9
- 238000000605 extraction Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000000758 substrate Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 2
- -1 polyparaphenylene vinylene Polymers 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- NCGICGYLBXGBGN-UHFFFAOYSA-N 3-morpholin-4-yl-1-oxa-3-azonia-2-azanidacyclopent-3-en-5-imine;hydrochloride Chemical compound Cl.[N-]1OC(=N)C=[N+]1N1CCOCC1 NCGICGYLBXGBGN-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 125000005595 acetylacetonate group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/878—Arrangements for extracting light from the devices comprising reflective means
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8428—Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/8723—Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
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- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Description
図2に示すように、屈折率(n)の大きいa層202(n=n1)中の光源Aから屈折率の小さいb層201と203(n=n2)に出射された光のうち、ある出射角θ0(ただし、θ0=sin-1(n2/n1))より大きな角度(θ1及びθ2)
で入射する光は、全反射され屈折率の大きいa層中を導波する。このようにして導波する光を導波光というが、この導波光の一部の成分は吸収されて消失し、残りはa層202中を伝搬して端面に逃げてしまうため、出射された光は、その一部しか面状発光として取り出すことができない。
なお、EL層を形成する膜及び透明電極の屈折率が両者ともnxである場合には総膜厚を(140/nx)以下にすれば良い。
本発明では透明電極とカバー材との間に不活性ガスを挟む構造とし、上述の構造を形成することで効率よく光を取り出すことができる。
さらに、EL素子中の発光層と該発光層を挟む電極との間にバッファー層を設けて発光層とバッファー層からEL層が形成される構造とすることで、さらなる取り出し効率の向上を図ることができる。
EL層102には、ポリマー系有機EL材料または、モノマー系有機EL材料を用いる。ポリマー系有機EL材料はポリマーの状態で溶媒に溶かして塗布することもできるし、モノマーの状態で溶媒に溶かして塗布した後に重合することもできる。
又、403は、アルミニウム(Al)を主成分とする電極であり、EL層404にはポリパラフェニレンビニレン(PPV)を用いる。
405はITOでなる透明電極であり、406で示されるガス空間には、アルゴンを充填させる。又、カバー材407としてはガラスを用い、スペーサー408を用いてガス空間406が確保される。
図5に於いて501は基板、502はEL層である。EL層にはPPVを用いる。503は、ストライプ状に配列された複数の不透明電極(陰極)であり、複数の不透明電極503と直交するようにストライプ状に複数の透明電極(陽極)504が設けられた構造をとる。
このとき、透明電極504の上にはガラスでなるカバー材506がスペーサー507を挟んで設けられている。こうしてカバー材506と透明電極504との間にガス空間505が形成される。本実施例ではガス空間505を窒素で充填する。なお、本実施例の構成は、実施例1の構成と自由に組み合わせて実施することが可能である。
なお、本実施例の構成は、実施例1または実施例2のいずれの構成とも自由に組み合わせて実施することが可能である。
なお、本実施例の構成は、実施例1〜実施例3のいずれの構成とも自由に組み合わせて実施することが可能である。
又、前記有機EL材料には、PPV、PVK(ポリビニルカルバゾール)などを用いると良い。本発明はパーソナルコンピューター(PC)のモニターや携帯電話の表示部などに用いられる液晶ディスプレイのバックライトに用いる事が可能である。
なお、本実施例の構成は、実施例1〜実施例4のいずれの構成とも自由に組み合わせて実施することが可能である。
Claims (7)
- 第1の電極と第2の電極との間に挟まれたEL層と、カバー材と、前記第1の電極と前記カバー材との間に挟まれたスペーサーと、を有し、
前記EL層は、発光層と電子注入層と正孔注入層とを有し、
前記第1の電極と前記カバー材との間には、空間が設けられ、
前記EL層から発生した光は、前記空間と前記カバー材とを通して射出され、
前記EL層の各層の膜厚(d)と、前記発生した光の波長(λ)と、前記EL層の屈折率(n)とは、d≦λ/(4n)なる関係式が成立することを特徴とする自発光装置。 - 第1の電極と第2の電極との間に挟まれたEL層と、ガラス、石英又はプラスチックでなるカバー材と、前記第1の電極と前記カバー材との間に挟まれたスペーサーと、を有し、
前記EL層は、発光層と電子注入層と正孔注入層とを有し、
前記スペーサーは、前記第1の電極と接しており、且つ前記カバー材と接しており、
前記第1の電極と前記カバー材との間には、空間が設けられ、
前記EL層から発生した光は、前記空間と前記カバー材とを通して射出され、
前記EL層の各層の膜厚(d)と、前記発生した光の波長(λ)と、前記EL層の屈折率(n)とは、d≦λ/(4n)なる関係式が成立することを特徴とする自発光装置。 - 請求項1又は請求項2において、
前記スペーサと前記第2の電極は重なっていないことを特徴とする自発光装置。 - 請求項1乃至請求項3のいずれか一項において、
前記空間には、不活性ガスが含まれていることを特徴とする自発光装置。 - 請求項1乃至請求項4のいずれか一項において、
前記第1の電極は陽極であり、
前記第2の電極は陰極であることを特徴とする自発光装置。 - 請求項1乃至請求項5のいずれか一項において、
前記第2の電極は、アルミニウムを主成分とする電極であることを特徴とする自発光装置。 - 請求項1乃至請求項6のいずれか一項において、
前記第2の電極は、TFTと電気的に接続されることを特徴とする自発光装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2011148422A JP4913254B2 (ja) | 1999-10-29 | 2011-07-04 | 自発光装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1999307903 | 1999-10-29 | ||
JP30790399 | 1999-10-29 | ||
JP2011148422A JP4913254B2 (ja) | 1999-10-29 | 2011-07-04 | 自発光装置 |
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JP2000327565A Division JP4823413B2 (ja) | 1999-10-29 | 2000-10-26 | 自発光装置 |
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JP2011222529A JP2011222529A (ja) | 2011-11-04 |
JP4913254B2 true JP4913254B2 (ja) | 2012-04-11 |
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US (3) | US6847163B1 (ja) |
EP (1) | EP1096579B1 (ja) |
JP (1) | JP4913254B2 (ja) |
KR (1) | KR20010051334A (ja) |
CN (1) | CN1316641C (ja) |
TW (1) | TW478019B (ja) |
Families Citing this family (38)
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TW478019B (en) * | 1999-10-29 | 2002-03-01 | Semiconductor Energy Lab | Self light-emitting device |
US8957584B2 (en) | 1999-10-29 | 2015-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Self light-emitting device |
US7483001B2 (en) | 2001-11-21 | 2009-01-27 | Seiko Epson Corporation | Active matrix substrate, electro-optical device, and electronic device |
US7038377B2 (en) | 2002-01-16 | 2006-05-02 | Seiko Epson Corporation | Display device with a narrow frame |
KR100912801B1 (ko) * | 2002-12-05 | 2009-08-18 | 삼성모바일디스플레이주식회사 | 유기 전계발광 소자 |
KR100563046B1 (ko) * | 2003-03-06 | 2006-03-24 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시 장치 |
WO2005064695A2 (en) * | 2003-12-29 | 2005-07-14 | Universiteit Gent | Low refractive index gap for enhanced light extraction from a display or lighting element |
EP1891691B1 (en) * | 2005-06-03 | 2012-08-01 | Philips Intellectual Property & Standards GmbH | Organic electroluminescent light source |
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JP5827104B2 (ja) | 2010-11-19 | 2015-12-02 | 株式会社半導体エネルギー研究所 | 照明装置 |
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US6847163B1 (en) | 2005-01-25 |
US8110983B2 (en) | 2012-02-07 |
US20050099120A1 (en) | 2005-05-12 |
CN1316641C (zh) | 2007-05-16 |
JP2011222529A (ja) | 2011-11-04 |
EP1096579B1 (en) | 2011-10-19 |
US20060267483A1 (en) | 2006-11-30 |
TW478019B (en) | 2002-03-01 |
CN1295425A (zh) | 2001-05-16 |
EP1096579A2 (en) | 2001-05-02 |
EP1096579A3 (en) | 2004-01-14 |
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