JP4909894B2 - 不揮発性半導体記憶装置およびその製造方法 - Google Patents
不揮発性半導体記憶装置およびその製造方法 Download PDFInfo
- Publication number
- JP4909894B2 JP4909894B2 JP2007520081A JP2007520081A JP4909894B2 JP 4909894 B2 JP4909894 B2 JP 4909894B2 JP 2007520081 A JP2007520081 A JP 2007520081A JP 2007520081 A JP2007520081 A JP 2007520081A JP 4909894 B2 JP4909894 B2 JP 4909894B2
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- Prior art keywords
- floating gate
- memory device
- semiconductor memory
- semiconductor layer
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 174
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 238000007667 floating Methods 0.000 claims description 104
- 239000000758 substrate Substances 0.000 claims description 46
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 33
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 31
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 238000000034 method Methods 0.000 description 49
- 230000008878 coupling Effects 0.000 description 33
- 238000010168 coupling process Methods 0.000 description 33
- 238000005859 coupling reaction Methods 0.000 description 33
- 238000009792 diffusion process Methods 0.000 description 26
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 19
- 229920005591 polysilicon Polymers 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 108091006146 Channels Proteins 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 8
- 238000001020 plasma etching Methods 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000007790 scraping Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007520081A JP4909894B2 (ja) | 2005-06-10 | 2006-06-02 | 不揮発性半導体記憶装置およびその製造方法 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005171361 | 2005-06-10 | ||
| JP2005171361 | 2005-06-10 | ||
| PCT/JP2006/311122 WO2006132158A1 (ja) | 2005-06-10 | 2006-06-02 | 不揮発性半導体記憶装置およびその製造方法 |
| JP2007520081A JP4909894B2 (ja) | 2005-06-10 | 2006-06-02 | 不揮発性半導体記憶装置およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2006132158A1 JPWO2006132158A1 (ja) | 2009-01-08 |
| JP4909894B2 true JP4909894B2 (ja) | 2012-04-04 |
Family
ID=37498358
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007520081A Expired - Fee Related JP4909894B2 (ja) | 2005-06-10 | 2006-06-02 | 不揮発性半導体記憶装置およびその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP4909894B2 (ko) |
| TW (1) | TW200721395A (ko) |
| WO (1) | WO2006132158A1 (ko) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101689547B (zh) * | 2007-05-24 | 2012-06-27 | 独立行政法人产业技术综合研究所 | 存储元件及其读取方法 |
| JP5388600B2 (ja) * | 2009-01-22 | 2014-01-15 | 株式会社東芝 | 不揮発性半導体記憶装置の製造方法 |
| KR101884296B1 (ko) | 2010-05-14 | 2018-08-01 | 고쿠리츠다이가쿠호진 도호쿠다이가쿠 | 반도체 집적 회로와 그 제조 방법 |
| US8803214B2 (en) | 2010-06-28 | 2014-08-12 | Micron Technology, Inc. | Three dimensional memory and methods of forming the same |
| JP5209677B2 (ja) | 2010-07-29 | 2013-06-12 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 不揮発性半導体メモリトランジスタ、および、不揮発性半導体メモリの製造方法 |
| US8759895B2 (en) | 2011-02-25 | 2014-06-24 | Micron Technology, Inc. | Semiconductor charge storage apparatus and methods |
| WO2014038058A1 (ja) * | 2012-09-07 | 2014-03-13 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置、および、半導体装置の製造方法 |
| US9041092B2 (en) | 2012-09-07 | 2015-05-26 | Unisantis Electronics Singapore Pte. Ltd. | Semiconductor device and method for producing the same |
| US8946807B2 (en) | 2013-01-24 | 2015-02-03 | Micron Technology, Inc. | 3D memory |
| US9184175B2 (en) | 2013-03-15 | 2015-11-10 | Micron Technology, Inc. | Floating gate memory cells in vertical memory |
| US9064970B2 (en) | 2013-03-15 | 2015-06-23 | Micron Technology, Inc. | Memory including blocking dielectric in etch stop tier |
| US9276011B2 (en) | 2013-03-15 | 2016-03-01 | Micron Technology, Inc. | Cell pillar structures and integrated flows |
| US9437604B2 (en) | 2013-11-01 | 2016-09-06 | Micron Technology, Inc. | Methods and apparatuses having strings of memory cells including a metal source |
| CN107534046B (zh) | 2015-03-02 | 2020-09-08 | 东芝存储器株式会社 | 半导体存储装置及其制造方法 |
| TWI608596B (zh) * | 2016-08-22 | 2017-12-11 | 旺宏電子股份有限公司 | 具有可交換閘極/通道之電晶體的記憶體元件與其製造方法 |
| US10312239B2 (en) * | 2017-03-16 | 2019-06-04 | Toshiba Memory Corporation | Semiconductor memory including semiconductor oxie |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0214582A (ja) * | 1988-06-30 | 1990-01-18 | Mitsubishi Electric Corp | 半導体記憶装置 |
| JPH1174382A (ja) * | 1997-08-29 | 1999-03-16 | Nec Corp | 不揮発性半導体記憶装置 |
| JP2001257276A (ja) * | 2000-03-10 | 2001-09-21 | Oki Electric Ind Co Ltd | 不揮発性メモリ |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19600307C1 (de) * | 1996-01-05 | 1998-01-08 | Siemens Ag | Hochintegrierter Halbleiterspeicher und Verfahren zur Herstellung des Halbleiterspeichers |
| JP2005311251A (ja) * | 2004-04-26 | 2005-11-04 | Fujio Masuoka | 半導体記憶装置及びその製造方法、それを備えてなる携帯電子機器 |
-
2006
- 2006-06-02 WO PCT/JP2006/311122 patent/WO2006132158A1/ja active Application Filing
- 2006-06-02 JP JP2007520081A patent/JP4909894B2/ja not_active Expired - Fee Related
- 2006-06-09 TW TW095120498A patent/TW200721395A/zh unknown
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0214582A (ja) * | 1988-06-30 | 1990-01-18 | Mitsubishi Electric Corp | 半導体記憶装置 |
| JPH1174382A (ja) * | 1997-08-29 | 1999-03-16 | Nec Corp | 不揮発性半導体記憶装置 |
| JP2001257276A (ja) * | 2000-03-10 | 2001-09-21 | Oki Electric Ind Co Ltd | 不揮発性メモリ |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI302365B (ko) | 2008-10-21 |
| JPWO2006132158A1 (ja) | 2009-01-08 |
| TW200721395A (en) | 2007-06-01 |
| WO2006132158A1 (ja) | 2006-12-14 |
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