JP4907539B2 - 複数の硬質導電性マイクロチップからなるアセンブリを備えた素子、ならびに、そのような素子と、軟質導電性突起を備えた素子と、の電気的接続方法 - Google Patents
複数の硬質導電性マイクロチップからなるアセンブリを備えた素子、ならびに、そのような素子と、軟質導電性突起を備えた素子と、の電気的接続方法 Download PDFInfo
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Description
−30°よりも小さなものとされた頂点の角度と、
−10よりも大きいような、チップのヤング率とバンプのヤング率との間の比率と、
を有している。これにより、最小の機械的圧力でもって、チップは、マイクロボール14の酸化物外層を穿孔し得るとともに、マイクロボール14内へと侵入することができる。
バンプは、各電気的コンタクト上において、樹脂キャビティの底部のところにおいて成膜を行うことにより、従来的手法によって形成することができる(従来的な『リフトオフ』プロセス、あるいは、樹脂リフトオフプロセス)。この場合、以下の様々なステップを行う。すなわち、
−複数のパッド22が既に形成されている基板21上において、樹脂製の中実層20を成膜するというステップ(図5A)と、
−マスク24を介して紫外線23を照射するというステップ(図5B)と、
−照射を受けた樹脂部分を除去するというステップ(図5C)と、
−マイクロボールを形成する材料25を成膜するというステップ(図5D)と、
−樹脂現像剤を使用して樹脂を除去するというステップ(図5E)と、
−材料を溶融させることによってボールを形成するという付加的なステップ(図5F)と、
を行う。
一組をなす複数のチップは、様々な手法によって形成することができる。例えば、金属の成膜や、エッチングや、電解成長や、『無電極』電界成膜プロセスや、金属のナノプリントや、互いに位置合わせされた複数のカーボンナノチューブの成長、等といったような様々な手法によって形成することができる。
第1の技術においては、樹脂キャビティ上においてスパッタリングまたは蒸着を行うことによって、金属の成膜体を形成する。成膜が進行するにつれて、開口が閉塞していき、キャビティの底部上へと成膜される金属の量が減少する。よって、キャビティの底部上において得られる形状は、円錐となる。
−複数のパッド32が既に形成されている基板31上においてフォトリソグラフィーを行うことにより、樹脂マスク30を成膜するというステップ(図6A)と、
−金属33を成膜するというステップ(図6Bおよび図6C)と、
−樹脂を除去するというステップ(図6D)と、
を行う。
また、傾斜側面を有した樹脂キャビティの底部において、金属の電解成長を行うことができる。そのような傾斜は、例えば、二重の樹脂コーティングによって、得ることができる。その場合、照射に対して互いに異なる感度を有した2種類の樹脂を、成膜する。照射後には、それら樹脂は、互いに異なる態様で溶解する。
−複数のパッド43が既に形成されている基板42上において2つの樹脂40,41を成膜することによって、二重樹脂コーティングを形成するというステップ(図7A)と、
−マスク45を介して紫外線44を照射するというステップ(図7B)と、
−照射を受けた樹脂部分を希薄するというステップ(図7C)と、
−チップを形成する材料46の電解成膜を行うというステップ(図7D)と、
−2つの樹脂40,41を除去するというステップ(図7E)と、
を行う。
また、本発明において独創的な手法として、合金を融点付近へと加熱することによって、合金を成型することができる。低い融点を有した合金を選択する必要がある。
−従来的手法によって合金層52が既に成膜されている基板51上において、モールド50をスタンピング形成するというステップ(図8Aおよび図8B)と、
−モールドを除去するというステップ(図8Cおよび図8D)と、
を行う。
電界の作用下においてナノチューブ(または、ナノワイヤ)を成長させることができ、これにより、ナノチューブを配向させることができる。この技術は、上記の非特許文献1に記載されている。この非特許文献1においては、化学気相蒸着を使用することによって、フレキシブルなプラスチック基板上において鉛直方向に向き揃えされた複数のカーボンナノチューブからなるネットワークを直接的に成長させることを想定している。
−複数のパッド64が既に形成されている基板63上において、TiN層60と、Ni層61と、触媒層62と、を成膜するというステップ(図9A)と、
−触媒を液滴の態様とし、450℃においてナノチューブ65を成長させるというステップ(図9B)と、
を行う。
9 第2パッド
10 第1素子
11 第2素子
13 硬質導電性チップ
14 軟質導電性バンプ
Claims (8)
- 第1素子の第1パッドと、第2素子の第2パッドと、の間において電気的な接続を形成するための方法であって、
前記第1素子(10)が、面上に、一組をなす複数の前記第1パッド(8)と、均等に分散配置された一組をなす複数の硬質導電性チップ(13)と、を備え、
前記第2素子(11)が、面上に、一組をなす複数の前記第2パッド(9)と、これら複数の前記第2パッド(9)上に各々が形成された一組をなす複数の軟質導電性バンプ(14)と、を備え、
前記第1素子の前記面および前記第2素子の前記面が、互いに対向して配置されているとともに、それら2つの面が、各々の前記バンプ内へと少なくとも1つの前記チップ(13)が侵入するようにして、互いに引き合わせられる場合に、この方法においては、
複数の硬質導電性チップ(13)のうちの互いに隣接する2つのチップ(13)の間の間隔を、前記バンプ(14)の幅よりも小さなものとし、なおかつ、前記第1パッド(8)の幅よりも小さなものとすることを特徴とする方法。 - 請求項1記載の方法において、
前記バンプを、前記第2パッド(9)の各々上においてキャビティの底部上に材料を成膜することにより、または、エッチングを行うことにより、形成することを特徴とする方法。 - 請求項1記載の方法において、
前記チップを、金属の成膜によって、または、電解成長によって、または、金属のナノプリントによって、または、エッチングによって、または、複数のナノチューブの互いに位置合わせされた成長によって、形成することを特徴とする方法。 - 面上に、一組をなす複数の第1パッド(8)と、均等に分散配置された一組をなす複数の硬質導電性チップ(13)と、を備えてなる素子であって、
この素子が、面上に一組をなす複数の第2パッド(9)とこれら複数の前記第2パッド(9)上に各々が形成された一組をなす複数の軟質導電性バンプ(14)とを備えた他の素子に対して、電気的な接続が形成され得るものとされ、
このような素子において、
複数の硬質導電性チップ(13)のうちの互いに隣接する2つのチップ(13)の間の間隔が、前記バンプ(14)の幅よりも小さなものとされ、なおかつ、前記第1パッド(8)の幅よりも小さなものとされていることを特徴とする素子。 - 請求項4記載の素子において、
前記複数の硬質導電性チップの全部が、または、前記複数の硬質導電性チップの一部が、導電性材料から形成されていることを特徴とする素子。 - 請求項4記載の素子において、
前記チップが、ナノチューブまたはナノワイヤから形成されていることを特徴とする素子。 - 請求項4記載の素子において、
前記バンプが、少なくとも1つの導電性材料から形成されていることを特徴とする素子。 - 請求項7記載の素子において、
前記バンプの形成材料が、半田付けペーストまたは導電性接着剤とされていることを特徴とする素子。
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FR0452252A FR2876244B1 (fr) | 2004-10-04 | 2004-10-04 | Composant muni d'un ensemble de micropointes conductrices dures et procede de connexion electrique entre ce composant et un composant muni de protuberances conductrices ductiles |
FR0452252 | 2004-10-04 | ||
PCT/FR2005/050793 WO2006037915A1 (fr) | 2004-10-04 | 2005-09-29 | Composant muni d'un ensemble de micropointes conductrices dures et procede de connexion electrique entre ce composant et un composant muni de protuberances conductrices ductiles |
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FR2876193B1 (fr) * | 2004-10-04 | 2007-01-26 | Commissariat Energie Atomique | Dispositif nanoimprime comportant des motifs metalliques et procede de nanoimpression de motifs metalliques |
JP4744360B2 (ja) * | 2006-05-22 | 2011-08-10 | 富士通株式会社 | 半導体装置 |
US20080227294A1 (en) * | 2007-03-12 | 2008-09-18 | Daewoong Suh | Method of making an interconnect structure |
JP5245276B2 (ja) * | 2007-04-11 | 2013-07-24 | 日本電気株式会社 | 電子部品の実装構造及びその実装方法 |
EP2197782B1 (en) * | 2007-09-12 | 2020-03-04 | Smoltek AB | Connecting and bonding adjacent layers with nanostructures |
US7749887B2 (en) * | 2007-12-18 | 2010-07-06 | Micron Technology, Inc. | Methods of fluxless micro-piercing of solder balls, and resulting devices |
JP5064205B2 (ja) * | 2007-12-27 | 2012-10-31 | タイコエレクトロニクスジャパン合同会社 | コンタクトおよびインタポーザ |
US8038479B2 (en) * | 2008-12-05 | 2011-10-18 | Nanoridge Materials | Carbon nanotube-based electrical connectors |
FR2971081B1 (fr) * | 2011-02-02 | 2013-01-25 | Commissariat Energie Atomique | Procédé de fabrication de deux substrats relies par au moins une connexion mécanique et électriquement conductrice obtenue |
FR2990565B1 (fr) | 2012-05-09 | 2016-10-28 | Commissariat Energie Atomique | Procede de realisation de detecteurs infrarouges |
FR2996053A1 (fr) * | 2012-09-27 | 2014-03-28 | Commissariat Energie Atomique | Procede d'assemblage de deux composants electroniques, de type flip-chip, assemblage obtenu selon le procede. |
FR3003688B1 (fr) * | 2013-03-22 | 2016-07-01 | Commissariat Energie Atomique | Procede d'assemblage flip chip comportant le pre-enrobage d'elements d'interconnexion |
DE102017104922A1 (de) | 2017-03-08 | 2018-09-13 | Olav Birlem | Verbindung von elektrischen Leitern |
TWI636533B (zh) | 2017-09-15 | 2018-09-21 | Industrial Technology Research Institute | 半導體封裝結構 |
FR3119047A1 (fr) | 2021-01-21 | 2022-07-22 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Structure de micro-insert a armature en silicium |
FR3119048A1 (fr) | 2021-01-21 | 2022-07-22 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Interconnexion avec ame |
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DE68913823T2 (de) * | 1988-06-21 | 1994-09-22 | Ibm | Lösbare elektrische Verbindung. |
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JPH04144137A (ja) * | 1990-10-05 | 1992-05-18 | Oki Electric Ind Co Ltd | 半導体素子のバンプ電極とその基板への実装方法 |
US5759047A (en) * | 1996-05-24 | 1998-06-02 | International Business Machines Corporation | Flexible circuitized interposer with apertured member and method for making same |
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US5929521A (en) * | 1997-03-26 | 1999-07-27 | Micron Technology, Inc. | Projected contact structure for bumped semiconductor device and resulting articles and assemblies |
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US8223553B2 (en) * | 2005-10-12 | 2012-07-17 | Macronix International Co., Ltd. | Systems and methods for programming a memory device |
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DE602005026029D1 (de) | 2011-03-03 |
EP1797749A1 (fr) | 2007-06-20 |
WO2006037915A1 (fr) | 2006-04-13 |
FR2876244B1 (fr) | 2007-01-26 |
US20080146071A1 (en) | 2008-06-19 |
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