JP4901126B2 - 電界吸収型変調器及びその製作方法 - Google Patents
電界吸収型変調器及びその製作方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000005253 cladding Methods 0.000 claims description 51
- 239000004065 semiconductor Substances 0.000 claims description 37
- 239000000463 material Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 15
- 230000031700 light absorption Effects 0.000 claims description 10
- 238000010521 absorption reaction Methods 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 description 19
- 238000000034 method Methods 0.000 description 9
- 230000008033 biological extinction Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 238000013461 design Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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- 230000001066 destructive effect Effects 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000005701 quantum confined stark effect Effects 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/0155—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption
- G02F1/0157—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption using electro-absorption effects, e.g. Franz-Keldysh [FK] effect or quantum confined stark effect [QCSE]
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
- G02F1/01708—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells in an optical wavequide structure
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- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Description
14 第二の電極
16 第一のクラッディング領域
18 第二のクラッディング領域
20 活性領域
21 トンネル接合構造
32 光吸収領域
34 n型半導体層
36 p型半導体層
Claims (9)
- 第一の電極(12)、接触層(38)、n型材料で形成された第一のクラッディング領域(16)、トンネル接合構造(21)、活性領域(20)、n型材料で形成された第二のクラッディング領域(18)、導電層(30)、電気的に絶縁性の基板(24)、及び第二の電極(14)を備える電界吸収型変調器であって、
前記第一の電極(12)は、導電性材料のストリップから形成された進行波信号電極または隔置された複数の電極セグメントから形成された進行波信号電極であり、
前記基板(24)の一方の面上に前記第二の電極(14)が配置され、
前記基板(24)の他方の面上に前記導電層(30)が配置され、
前記導電層(30)に隣接して前記第二のクラッディング領域(18)が配置され、
前記第一のクラッディング領域(16)と前記第二のクラッディング領域(18)の間に、前記活性領域(20)及び前記トンネル接合構造(21)が配置され、
前記接触層(38)の一方の面上に前記第一の電極(12)が配置され、
前記接触層(38)の他方の面上に前記第一のクラッディング領域(16)が配置され、
前記活性領域(20)と前記トンネル接合構造(21)は互いに隣接して配置されて、
a)前記活性領域(20)は前記第二のクラッディング領域(18)に隣接して配置され、かつ、前記トンネル接合構造(21)は前記第一のクラッディング領域(16)に隣接して配置されるか、または、
b)前記活性領域(20)は前記第一のクラッディング領域(16)に隣接して配置され、かつ、前記トンネル接合構造(21)は前記第二のクラッディング領域(18)に隣接して配置され、
前記接触層(38)は、前記第一の電極(12)と前記第一のクラッディング領域(16)との間のオーム接点として作用し、
前記活性領域(20)は光吸収領域(32)を含み、
前記トンネル接合構造は、前記第一及び第二の電極に電圧が印加されたときに、前記光吸収領域中で生成された正孔を吸い込むように動作し、前記トンネル接合構造は、n型半導体層(34)とp型半導体層(36)から構成され、前記n型半導体層(34)及びp型半導体層(36)が、熱平衡にあるそれぞれの空乏層の厚さXn及びXpにより特性付けられるものであり、前記n型半導体層(34)が約0.9×Xn以上、約2.0×Xn未満の厚さtnを有し、前記p型半導体層(36)が約0.9×Xp以上、約2.0×Xp未満の厚さtpを有することを特徴とする、電界吸収型変調器。 - Xn≦tn≦1.1×Xn及びXp≦tp≦1.1×Xp
であることを特徴とする、請求項1に記載の電界吸収型変調器。 - 前記n型半導体層(34)が約1019cm−3以上のドナー不純物濃度を有し、前記p型半導体層(36)が約1019cm−3以上のアクセプター不純物濃度を有することを特徴とする、請求項1または2に記載の電界吸収型変調器。
- 前記n型半導体層(34)が前記第一のクラッディング領域(16)に隣接し、前記p型半導体層(36)が前記活性領域(20)に隣接し、前記第一のクラッディング領域(16)がn型にドーピングされていることを特徴とする、請求項1または2に記載の電界吸収型変調器。
- 前記活性領域(20)が、前記p型半導体層(36)と前記第二のクラッディング領域(18)の間に、かつ、それらの各々に隣接して存在し、前記第二のクラッディング領域(18)がn型にドーピングされていることを特徴とする、請求項4に記載の電界吸収型変調器。
- 前記接触層(38)は、縮退ドープされたn型接触層である、請求項4に記載の電界吸収型変調器。
- 前記活性領域(20)が少なくとも1つの量子井戸を含むことを特徴とする、請求項1または2に記載の電界吸収型変調器。
- 第一の電極(12)を導電性材料のストリップから形成された進行波信号電極または隔置された複数の電極セグメントから形成された進行波信号電極として形成するステップであって、接触層(38)の一方の面上に前記第一の電極(12)を形成し、電気的に絶縁性の基板(24)の一方の面上に第二の電極(14)を形成することからなる、ステップと、
前記基板(24)の他方の面上に導電層(30)を形成するステップと、
前記導電層(30)に隣接してn型材料からなる第二のクラッディング領域(18)を形成するステップと、
n型材料からなる第一のクラッディング領域(16)と前記第二のクラッディング領域(18)の間に、前記第一のクラッディング領域(16)と前記第二のクラッディング領域(18)の一方に隣接するように、光吸収領域(32)を含む活性領域(20)を形成するステップと、
前記第一のクラッディング領域(16)と前記第二のクラッディング領域(18)の一方、及び、前記活性領域(20)に隣接してトンネル接合構造(21)を形成するステップ
とを含む電界吸収型変調器を製作する方法であって、
前記第一のクラッディング領域(16)は、前記接触層(38)の他方の面上に形成され、
前記接触層(38)は、前記第一の電極(12)と前記第一のクラッディング領域(16)との間のオーム接点として作用し、
前記トンネル接合構造は、前記第一及び第二の電極に電圧が印加されたときに、前記光吸収領域中で生成された正孔を吸い込むように動作し、前記トンネル接合構造は、n型半導体層とp型半導体層から構成され、前記n型半導体層(34)及びp型半導体層(36)が、熱平衡にあるそれぞれの空乏層の厚さXn及びXpにより特性付けられるものであり、前記n型半導体層(34)が約0.9×Xn以上、約2.0×Xn未満の厚さtnを有し、前記p型半導体層(36)が約0.9×Xp以上、約2.0×Xp未満の厚さtpを有することからなる、電界吸収型変調器を製作する方法。 - Xn≦tn≦1.1×Xn及びXp≦tp≦1.1×Xp
である、請求項8に記載の電界吸収型変調器を製作する方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US10/848,870 | 2004-05-19 | ||
US10/848,870 US7425726B2 (en) | 2004-05-19 | 2004-05-19 | Electroabsorption modulators and methods of making the same |
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JP2005331947A JP2005331947A (ja) | 2005-12-02 |
JP4901126B2 true JP4901126B2 (ja) | 2012-03-21 |
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US (1) | US7425726B2 (ja) |
EP (1) | EP1598692B1 (ja) |
JP (1) | JP4901126B2 (ja) |
DE (1) | DE602004020974D1 (ja) |
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JP2007248850A (ja) * | 2006-03-16 | 2007-09-27 | Oki Electric Ind Co Ltd | マッハツェンダ型半導体素子及びその制御方法 |
JP4870518B2 (ja) | 2006-10-24 | 2012-02-08 | Nttエレクトロニクス株式会社 | 半導体光変調器 |
CN114442340A (zh) * | 2022-01-17 | 2022-05-06 | 哈尔滨工业大学 | 一种基于p-n结的近场辐射热流调制器 |
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US5818072A (en) * | 1992-05-12 | 1998-10-06 | North Carolina State University | Integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same |
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US6483863B2 (en) * | 2001-01-19 | 2002-11-19 | The Trustees Of Princeton University | Asymmetric waveguide electroabsorption-modulated laser |
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WO2002061499A1 (en) | 2001-02-01 | 2002-08-08 | The Regents Of The University Of California | Electroabsorption modulator having a barrier inside a quantum well |
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EP1320158A1 (en) | 2001-12-13 | 2003-06-18 | Agilent Technologies, Inc. (a Delaware corporation) | Means of controlling dopant diffusion in a semiconductor heterostructure |
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2004
- 2004-05-19 US US10/848,870 patent/US7425726B2/en active Active
- 2004-11-25 DE DE602004020974T patent/DE602004020974D1/de active Active
- 2004-11-25 EP EP04028039A patent/EP1598692B1/en not_active Expired - Fee Related
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EP1598692A1 (en) | 2005-11-23 |
EP1598692B1 (en) | 2009-05-06 |
JP2005331947A (ja) | 2005-12-02 |
US7425726B2 (en) | 2008-09-16 |
DE602004020974D1 (de) | 2009-06-18 |
US20050258430A1 (en) | 2005-11-24 |
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