JP4882088B2 - 波長可変レーザ装置及びその波長制御方法 - Google Patents

波長可変レーザ装置及びその波長制御方法 Download PDF

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JP4882088B2
JP4882088B2 JP2007134483A JP2007134483A JP4882088B2 JP 4882088 B2 JP4882088 B2 JP 4882088B2 JP 2007134483 A JP2007134483 A JP 2007134483A JP 2007134483 A JP2007134483 A JP 2007134483A JP 4882088 B2 JP4882088 B2 JP 4882088B2
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wavelength
phase adjustment
adjustment region
region
current
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JP2008288524A5 (cg-RX-API-DMAC7.html
JP2008288524A (ja
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英生 有本
和弘 伊藤
博康 佐々木
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日本オプネクスト株式会社
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Priority to US11/833,271 priority patent/US7733933B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/146—External cavity lasers using a fiber as external cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2007134483A 2007-05-21 2007-05-21 波長可変レーザ装置及びその波長制御方法 Active JP4882088B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007134483A JP4882088B2 (ja) 2007-05-21 2007-05-21 波長可変レーザ装置及びその波長制御方法
US11/833,271 US7733933B2 (en) 2007-05-21 2007-08-03 Wavelength tunable laser apparatus and wavelength control method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007134483A JP4882088B2 (ja) 2007-05-21 2007-05-21 波長可変レーザ装置及びその波長制御方法

Publications (3)

Publication Number Publication Date
JP2008288524A JP2008288524A (ja) 2008-11-27
JP2008288524A5 JP2008288524A5 (cg-RX-API-DMAC7.html) 2010-04-15
JP4882088B2 true JP4882088B2 (ja) 2012-02-22

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US (1) US7733933B2 (cg-RX-API-DMAC7.html)
JP (1) JP4882088B2 (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103172761A (zh) * 2013-04-22 2013-06-26 青岛贝尔特生物科技有限公司 一种高品质褐藻酸钠节能减排的生产方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5103416B2 (ja) * 2009-02-13 2012-12-19 アンリツ株式会社 波長掃引光源
JP5103421B2 (ja) * 2009-02-25 2012-12-19 アンリツ株式会社 波長掃引光源
US8391330B2 (en) * 2009-04-20 2013-03-05 Corning Incorporated Fracture resistant metallization pattern for semiconductor lasers
US9479280B2 (en) * 2011-07-14 2016-10-25 Applied Optoelectronics, Inc. Extended cavity fabry-perot laser assembly capable of high speed optical modulation with narrow mode spacing and WDM optical system including same
GB2516679C (en) * 2013-07-30 2019-08-28 Rushmere Tech Limited Optical source
GB201722292D0 (en) * 2017-12-29 2018-02-14 Oclaro Tech Ltd Negative bias to improve phase noise

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5119393A (en) * 1989-06-14 1992-06-02 Hitachi, Ltd. Semiconductor laser device capable of controlling wavelength shift
JPH0437182A (ja) * 1990-06-01 1992-02-07 Nippon Telegr & Teleph Corp <Ntt> 波長可変多重量子井戸半導体レーザ光源装置
JP2002043698A (ja) * 1999-12-22 2002-02-08 Yokogawa Electric Corp Ｓｈｇレーザ光源及びｓｈｇレーザ光源の変調方法
US7257142B2 (en) * 2004-03-29 2007-08-14 Intel Corporation Semi-integrated designs for external cavity tunable lasers
JP4774761B2 (ja) 2005-03-03 2011-09-14 日本電気株式会社 波長可変共振器、波長可変レーザ、光モジュール及びそれらの制御方法
WO2007004509A1 (ja) * 2005-07-01 2007-01-11 Nec Corporation 外部共振器型波長可変レーザ装置および光出力モジュール

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103172761A (zh) * 2013-04-22 2013-06-26 青岛贝尔特生物科技有限公司 一种高品质褐藻酸钠节能减排的生产方法

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US7733933B2 (en) 2010-06-08
US20080291957A1 (en) 2008-11-27
JP2008288524A (ja) 2008-11-27

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