JP7071646B2 - 波長可変レーザ - Google Patents
波長可変レーザ Download PDFInfo
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- JP7071646B2 JP7071646B2 JP2019016870A JP2019016870A JP7071646B2 JP 7071646 B2 JP7071646 B2 JP 7071646B2 JP 2019016870 A JP2019016870 A JP 2019016870A JP 2019016870 A JP2019016870 A JP 2019016870A JP 7071646 B2 JP7071646 B2 JP 7071646B2
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- 230000003287 optical effect Effects 0.000 claims description 89
- 239000004065 semiconductor Substances 0.000 claims description 62
- 239000010408 film Substances 0.000 claims description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 238000002347 injection Methods 0.000 claims description 13
- 239000007924 injection Substances 0.000 claims description 13
- 230000007704 transition Effects 0.000 claims description 10
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 229910052805 deuterium Inorganic materials 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 description 32
- 238000012986 modification Methods 0.000 description 26
- 230000004048 modification Effects 0.000 description 26
- 238000010586 diagram Methods 0.000 description 15
- 230000010355 oscillation Effects 0.000 description 15
- 230000008859 change Effects 0.000 description 11
- 238000004891 communication Methods 0.000 description 7
- 238000009825 accumulation Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 235000019796 monopotassium phosphate Nutrition 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910000402 monopotassium phosphate Inorganic materials 0.000 description 1
- 239000000382 optic material Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- PJNZPQUBCPKICU-UHFFFAOYSA-N phosphoric acid;potassium Chemical compound [K].OP(O)(O)=O PJNZPQUBCPKICU-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
- H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
- H01S5/0424—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer lateral current injection
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/021—Silicon based substrates
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0265—Intensity modulators
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- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
- H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
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- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/11—Comprising a photonic bandgap structure
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
- H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
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- H01—ELECTRIC ELEMENTS
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
- H01S5/32391—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers based on In(Ga)(As)P
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- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Nonlinear Science (AREA)
- Semiconductor Lasers (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Description
図1は、本発明の第1実施形態に係る波長可変レーザの断面を模式的に示す図である。図1は、波長可変レーザの表面をx-y平面とする模式的な断面図であり、図の奥行き方向をx、左右方向をy、厚さ方向をzと定義する。
図3は、本発明の第2実施形態に係る波長可変レーザの断面を模式的に示す図である。図3に示す波長可変レーザ200は、電流注入型のキャリア蓄積を行って光導波路25の屈折率を可変するものである。
図6は、波長可変レーザ200(図3)を変形した波長可変レーザの断面を模式的に示す図である。図5に示す波長可変レーザ300は、変調拡散部12と変調拡散部14が接合するPN接合部分を真性半導体(i-Si)26で構成したものである。
図7は、波長可変レーザ200(図3)を変形した波長可変レーザの断面を模式的に示す図である。図7に示す波長可変レーザ400は、変調拡散部12と変調拡散部14が接合するPN接合部分を縦方向に形成したものである。このように、光変調部10に注入する電流を縦方向に流しても良い。波長可変レーザ200(図3)と同じ作用効果が得られる。
図8は、波長可変レーザ400(図7)を変形した波長可変レーザの断面を模式的に示す図である。図8に示す波長可変レーザ500は、縦方向に形成された変調拡散部12と変調拡散部14の間に絶縁膜50を設けたものである。このように光変調部10は、波長可変レーザ100(図1)と同様にキャリア蓄積型の変調器で構成しても良い。
図9は、波長可変レーザ500(図8)を変形した波長可変レーザの断面を模式的に示す図である。図9に示す波長可変レーザ600は、波長可変レーザ500(図8)の絶縁膜50を電気光学材料60で構成したものである。
図10は、波長可変レーザ100(図1)を変形した波長可変レーザの断面を模式的に示す図である。図10に示す波長可変レーザ700は、活性層22aと対向する変調拡散部12の部分をリブ形状としたものである。
図11は、波長可変レーザ700(図10)を変形した波長可変レーザの断面を模式的に示す図である。図11に示す波長可変レーザ800は、波長可変レーザ700(図10)のリブ形状とした変調拡散部12とI層22の間の絶縁膜(SiO2)を、電気光学材料60に置き換えたものである。
図12は、波長可変レーザ200(図3)を変形した波長可変レーザの断面を模式的に示す図である。図12に示す波長可変レーザ900は、変調拡散部12と変調拡散部14の間に絶縁膜50を挿入したものである。
図13は、波長可変レーザ900(図12)を変形した波長可変レーザの断面を模式的に示す図である。図13に波長可変レーザ1000は、変調拡散部12と変調拡散部14の間の絶縁膜50を、電気光学材料60に置き換えたものである。
図14は、半導体利得部20を縦方向電流注入型で構成した波長可変レーザの断面を模式的に示す図である。図14に示すように不純物ドープされたIII-V族半導体のp型InP(p-InP)21、I層22、及びn型InP(n-InP)23を縦方向に積層させて半導体利得部20を構成しても良い。
10:光変調部
10C、10K:電極
20:半導体利得部
20A:アノード電極
20K:カソード電極
21:p型InP(p-InP)
22:I層
22a:活性層
23:n型InP(n-InP)
24:キャパシタンス
25:光導波路
26:真性半導体(i-Si)
30:光帰還部
50:絶縁膜
60:電気光学材料
Claims (7)
- III-V族化合物半導体からなる半導体利得部と、
前記半導体利得部で生成された光を回折させて前記半導体利得部に帰還させる光帰還部と、
間接遷移型のドーピングされたシリコンを含んだ光導波路を含む光変調部と
を備え、
前記半導体利得部と前記光変調部は、光モードをオーバーラップさせて配置されることを特徴とする波長可変レーザ。 - 前記半導体利得部は、
横方向電流注入型の埋め込み活性層薄膜で構成される
ことを特徴とする請求項1に記載の波長可変レーザ。 - 前記光変調部は、
前記光導波路がリブ構造を備えるシリコン光変調器で構成される
ことを特徴とする請求項1又は2に記載の波長可変レーザ。 - 前記光帰還部は、
前記半導体利得部の上に形成された回折格子で構成される
ことを特徴とする請求項1乃至3の何れかに記載の波長可変レーザ。 - 前記回折格子は、
重水素を含むSiN膜又はSiON膜で構成される
ことを特徴とする請求項4に記載の波長可変レーザ。 - 単結晶Si基板の上に形成されたSiO2からなる下部クラッド層を備え、当該下部クラッド層の上に前記光変調部が配置される
ことを特徴とする請求項1乃至5の何れかに記載の波長可変レーザ。 - 前記半導体利得部と前記光変調部のそれぞれの電極は、前記半導体利得部側の表面に配置される
ことを特徴とする請求項1乃至6の何れかに記載の波長可変レーザ。
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JP2019016870A JP7071646B2 (ja) | 2019-02-01 | 2019-02-01 | 波長可変レーザ |
US17/421,467 US20220085576A1 (en) | 2019-02-01 | 2020-01-17 | Tunable Laser |
PCT/JP2020/001400 WO2020158431A1 (ja) | 2019-02-01 | 2020-01-17 | 波長可変レーザ |
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US20160094014A1 (en) | 2014-09-30 | 2016-03-31 | Dong-Jae Shin | Hybrid Silicon Lasers on Bulk Silicon Substrates |
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US5563902A (en) * | 1994-08-23 | 1996-10-08 | Samsung Electronics, Co. Ltd. | Semiconductor ridge waveguide laser with lateral current injection |
US6614977B2 (en) * | 2001-07-12 | 2003-09-02 | Little Optics, Inc. | Use of deuterated gases for the vapor deposition of thin films for low-loss optical devices and waveguides |
JP2012028395A (ja) * | 2010-07-20 | 2012-02-09 | Sumitomo Electric Ind Ltd | 半導体レーザ素子 |
EP2463694A1 (en) * | 2010-12-10 | 2012-06-13 | Alcatel Lucent | A distributed feedback laser structure for a photonic integrated circuit and method of manufacturing such structure |
US8937981B2 (en) * | 2011-11-01 | 2015-01-20 | Hewlett-Packard Development Company, L.P. | Direct modulated laser |
EP2811593B1 (fr) * | 2013-06-07 | 2016-04-27 | Alcatel Lucent | Dispositif d'émission laser accordable |
JP6315600B2 (ja) * | 2015-03-12 | 2018-04-25 | 日本電信電話株式会社 | 半導体光素子 |
JP2018046258A (ja) * | 2016-09-16 | 2018-03-22 | 国立大学法人 東京大学 | 光集積回路装置及びその製造方法 |
JP6839035B2 (ja) * | 2017-06-12 | 2021-03-03 | 日本電信電話株式会社 | 半導体装置の製造方法 |
US10404038B2 (en) * | 2017-06-22 | 2019-09-03 | Sumitomo Electric Industries, Ltd. | Quantum cascade laser |
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