JP4880791B2 - 試料の偏光計スペクトルおよび他の特性を測定するシステム - Google Patents
試料の偏光計スペクトルおよび他の特性を測定するシステム Download PDFInfo
- Publication number
- JP4880791B2 JP4880791B2 JP2011055357A JP2011055357A JP4880791B2 JP 4880791 B2 JP4880791 B2 JP 4880791B2 JP 2011055357 A JP2011055357 A JP 2011055357A JP 2011055357 A JP2011055357 A JP 2011055357A JP 4880791 B2 JP4880791 B2 JP 4880791B2
- Authority
- JP
- Japan
- Prior art keywords
- sample
- radiation
- spectrum
- polarimeter
- polarized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001228 spectrum Methods 0.000 title claims description 42
- 230000005855 radiation Effects 0.000 claims description 74
- 230000010287 polarization Effects 0.000 claims description 39
- 238000005286 illumination Methods 0.000 claims description 38
- 230000003287 optical effect Effects 0.000 claims description 31
- 238000005259 measurement Methods 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 21
- 235000012431 wafers Nutrition 0.000 description 22
- 239000002131 composite material Substances 0.000 description 19
- 238000004458 analytical method Methods 0.000 description 10
- 238000005452 bending Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 239000010408 film Substances 0.000 description 8
- 238000000985 reflectance spectrum Methods 0.000 description 8
- 230000003595 spectral effect Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- 238000000391 spectroscopic ellipsometry Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 238000000572 ellipsometry Methods 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- 229910052724 xenon Inorganic materials 0.000 description 4
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 4
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000001066 destructive effect Effects 0.000 description 3
- 229910052805 deuterium Inorganic materials 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000000701 chemical imaging Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J4/00—Measuring polarisation of light
- G01J4/02—Polarimeters of separated-field type; Polarimeters of half-shadow type
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/447—Polarisation spectrometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Length Measuring Devices By Optical Means (AREA)
Description
図1は、本発明の好適な実施形態を例示するための、分光学的偏光解析装置と偏光計システムとを有する複合装置の概要図である。複合装置の分光学的偏光解析装置を説明する前に、先ず偏光計システム8が図1および図2を参照してある程度詳しく説明される。後述するように、好ましくはシステム8を、図1の複合装置の分光学的(または単一波長の)偏光解析装置と一緒に使用すると有利であるが、このシステムはまた試料を測定するためにそれ自身で効果的に使用することもできる。
ここで、Einは偏光子102によって偏光された後のビーム46内の放射線の電界、Eo はその値、Es in、Ep inはs分極とp分極とに沿う放射線の成分である。放射線が対物レンズを出た後は、次のようになる。
ここで、Eout は試料3によって反射された後のビーム46内の放射線の電界、Es out 、Ep out はs分極とp分極に沿うその成分であり、rs s (ro s )とrs p (ro p )は試料(対物レンズ)のためのs分極およびp分極用反射係数である。対物レンズ用の反射係数は、図3Aに示される2個のミラーの反射係数の積、すなわちro s =ro1 s ro2 sおよびro p =ro1 pro2 pである。φa の偏光面を備えた分析器を通過した後の分光器における電界は、pa に沿って得られる。
偏光子102が省略されれば、半円形開口に対する検出器電流は次のようになる。
式(2)において、Ro s 、Rs s 、Ro p 、Rs p は、|ro s |2 、|rs s |2 、|ro p |2 、|rs p |2 としてそれぞれ定義される。ro s 、rs s 、ro p 、rs p は、入射角の関数、すなわちρの関数であることに留意しなければならない。偏光子102が図1〜図3に示すように位置していると、分光器における強度は試料および対物レンズのs反射率とp反射率およびΔo 、Δs の関数であるといった一般式が導かれ、Δo 、Δs は、
によって定義され(ここで、rs p 、rs s はp分極およびs分極における放射線の試料表面の複合反射係数であり、ro p 、ro s はp分極およびs分極における放射線の対物レンズの複合反射係数である)、Ψo 、Ψs 、Δo 、Δs はまた偏光解析装置のパラメータである。従って、システム8は、偏光に感応する。
A.φ0 =π
Δの変化に感応するシステムに対して、2(φp −φa )=mπである。φp =φa'であれば、
B.φ0 =π/2
φp =φa =π/2であれば、
Claims (29)
- 試料の情報を得る方法であって、
広帯域放射線の第1の偏光ビームを1以上の層上に集束するステップであって、前記第1の偏光ビームが試料表面に直角な参照面に対する角度φの関数である多数の偏光状態を有するステップと、
前記第1の偏光ビームから発生しかつ前記試料により変化している放射線を、レンズにより集めるステップと、
偏光計スペクトルを生成するために前記試料により変化しかつ前記試料から集められた放射線を分析し、その放射線を分散するステップと、
前記1以上の層に対して傾斜した角度の方向で、広帯域放射線の第2の偏光ビームを前記試料に集束するステップと、
前記試料により変化しかつ前記第2の偏光ビームから発生する放射線の変化の測定値を得るステップと、
前記測定値と前記偏光計スペクトルとから前記試料の特性に関する情報を判定するステップと、
を含む方法。 - 請求項1記載の方法において、
前記第1の偏光ビームまたは前記第2の偏光ビームが紫外線波長または深紫外線波長を含む放射線を含むので、前記試料の特性が前記紫外線波長または深紫外線波長を含む波長で前記測定値または前記偏光計スペクトルから判定される方法。 - 請求項1記載の方法において、
前記得るステップが、前記試料により変化しかつ前記第2の偏光ビームから発生する放射線の量および位相における放射線の偏光状態の変化の測定値を得る方法。 - 請求項1記載の方法において、
前記第1の偏光ビームの放射線と前記第2の偏光ビームの放射線との組み合わせが、約190nmから約830nmまでの範囲の多重波長を含む方法。 - 請求項1記載の方法において、
前記第2の偏光ビームが、実質的に単一波長での放射線を含む方法。 - 請求項1記載の方法において、
前記試料の特性に関する情報には、前記試料の複屈折特性が含まれる方法。 - 請求項1記載の方法において、
前記試料の特性に関する情報には、前記試料の厚さおよび屈折率が含まれる方法。 - 試料の情報を得る装置であって、
広帯域放射線の偏光された第1のサンプルビームを1以上の層に集束し、かつ前記1以上の層に対して傾斜した角度の方向で、広帯域放射線の偏光された第2のサンプルビームを前記試料に集束する第1の光学系と、
前記第1のサンプルビームから発生しかつ前記試料により変化している放射線を集め、レンズを備える第2の光学系と、
偏光計スペクトルを生成するために前記試料により変化しかつ前記試料から集められた放射線を分析し、その放射線を分散する器具と、
前記試料により変化しかつ前記第2のサンプルビームから発生する放射線の量および位相における偏光状態の変化の測定値を得る偏光解析装置と、を備え、
前記試料の特性に関する情報は、前記偏光解析装置と前記偏光計スペクトルとから導出可能である装置。 - 請求項8記載の装置において、
前記第1のサンプルビームおよび前記第2のサンプルビームが紫外線波長または深紫外線波長を含む放射線を含むので、前記試料の特性が前記紫外線波長または深紫外線波長を含む波長で前記測定値または前記偏光計スペクトルから判定される装置。 - 請求項9記載の装置において、
前記第1のサンプルビームの放射線と前記第2のサンプルビームの放射線との組み合わせが、約190nmから約830nmまでの範囲の多重波長を含む装置。 - 請求項8記載の装置において、
前記偏光解析装置が、単一波長の偏光解析装置である装置。 - 請求項8記載の装置において、
前記試料の特性に関する情報には、前記試料の複屈折特性が含まれる装置。 - 請求項8記載の装置において、
前記試料の特性に関する情報には、前記試料の厚さおよび屈折率が含まれる装置。 - 試料の特性を測定する装置であって、
放射線の偏光されたサンプルビームを試料上に集束する第1の光学系と、
前記試料により変化している前記サンプルビームから放射線を集める第2の光学系と、 前記試料により変化しかつ前記試料から集められた放射線を分析する偏光素子と、
スペクトルを生成するために前記偏光素子により分析された放射線を分散する手段であって、放射線と前記サンプルビームとの間の偏光状態における実質的な相対的変化が、前記第1の光学系、前記第2の光学系および前記偏光素子において使用される光学素子間の相対運動によって引き起こされない手段と、を備え、
前記試料の特性に関する情報は、前記スペクトルから導出可能であり、
前記第1の光学系および前記第2の光学系に、集束することおよび集めることを2回、試料表面に直角な参照面に対する2つの異なる範囲の角度内で行わせる手段も備える装置。 - 請求項14記載の装置において、
前記試料が少なくとも2つの軸に沿った異なる特性を有し、前記行わせる手段が、前記軸のうちの1つの軸の周りにそれぞれ整列されるかあるいは中心化された少なくとも2つの異なる開口を使用する装置。 - 請求項15記載の装置において、
少なくとも2つの異なる開口が、実質的に90°離れている装置。 - 請求項14記載の装置において、
前記サンプルビームが前記試料に達する前に、前記偏光素子は前記サンプルビームを偏光し、集束すること、集めること、および分散することが2回行われ、1回は試料表面に直角な参照面に対する第1の範囲の角度内の前記サンプルビームの偏光状態および変化しかつ集められた放射線の偏光状態を有し、もう1回は前記参照面に対する第1の範囲の角度とは異なる第2の範囲の角度内の偏光状態を有する装置。 - 請求項17記載の装置において、
集束すること、集めること、および分散することが2回行われている間、2つの異なる位置で前記サンプルビームを偏光することを前記偏光素子が行う装置。 - 請求項18記載の装置において、
前記2つの異なる位置が、回転により実質的に90°離れている装置。 - 請求項18記載の装置において、
前記試料が少なくとも2つの軸に沿った異なる特性を有し、前記偏光素子の2つの異なる位置を異なる特性を検出するために配向する装置。 - 請求項14記載の装置において、
前記偏光素子が、偏光子または偏光ビーム分割器を含む装置。 - 請求項14記載の装置において、
前記サンプルビームが前記試料に達する前に、前記偏光素子は前記サンプルビームを偏光し、多数の偏光状態を有するビームを前記試料上に集束させ、前記偏光状態が試料表面に直角な参照面に対する角度φの関数であり、前記角度φが照明開口の実質的な角度を規定する範囲を有する装置。 - 請求項22記載の装置において、
前記第1の光学系が異なる入射面に沿って前記偏光されたサンプルビームを前記試料上に集束し、前記入射面が参照面に対して異なる角度にあり、前記照明開口の角度範囲が約90°または180°である装置。 - 請求項14記載の装置において、
前記サンプルビームの放射線は、少なくとも1つの紫外線波長または深紫外線波長を含む装置。 - 請求項14記載の装置において、
前記試料が少なくとも2つの軸に沿った種々の光学的に検出可能な特性を有し、前記装置が前記軸のうちの1つに整列された少なくとも1つの開口をさらに備え、前記開口が前記第1の光学系と前記分散する手段との間の光路内にある装置。 - 請求項25記載の装置において、
前記少なくとも1つの開口が、前記軸のうちの1つの軸の周りに中心化される装置。 - 請求項25記載の装置において、
前記軸のうちの1つに整列されるように少なくとも2つ開口のうちの1つを選択する機構をさらに備える装置。 - 請求項27記載の装置において、
前記機構により2つの異なる開口のそれぞれを前記軸の対応する一つに整列させるので、前記2つの異なる開口がそれらの対応する軸に連続して整列されたときに得られる偏光計スペクトルは、前記試料の光学的に検出可能な特性に関する情報をもたらす装置。 - 請求項28記載の装置において、
前記機構が、その中に少なくとも2つの開口を有する車輪と、その少なくとも2つの開口のそれぞれの偏光子とを含む装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/246,922 | 1999-02-09 | ||
US09/246,922 US6184984B1 (en) | 1999-02-09 | 1999-02-09 | System for measuring polarimetric spectrum and other properties of a sample |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000598823A Division JP4880122B2 (ja) | 1999-02-09 | 2000-02-09 | 試料の偏光計スペクトルおよび他の特性を測定するシステム |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2011141288A JP2011141288A (ja) | 2011-07-21 |
JP2011141288A5 JP2011141288A5 (ja) | 2011-10-20 |
JP4880791B2 true JP4880791B2 (ja) | 2012-02-22 |
Family
ID=22932784
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000598823A Expired - Fee Related JP4880122B2 (ja) | 1999-02-09 | 2000-02-09 | 試料の偏光計スペクトルおよび他の特性を測定するシステム |
JP2011055357A Expired - Lifetime JP4880791B2 (ja) | 1999-02-09 | 2011-03-14 | 試料の偏光計スペクトルおよび他の特性を測定するシステム |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000598823A Expired - Fee Related JP4880122B2 (ja) | 1999-02-09 | 2000-02-09 | 試料の偏光計スペクトルおよび他の特性を測定するシステム |
Country Status (3)
Country | Link |
---|---|
US (3) | US6184984B1 (ja) |
JP (2) | JP4880122B2 (ja) |
WO (1) | WO2000047961A1 (ja) |
Families Citing this family (147)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7489400B1 (en) * | 1995-09-20 | 2009-02-10 | J.A. Woollam Co., Inc. | System and method of applying xenon arc-lamps to provide 193 nm wavelengths |
US6930813B1 (en) | 2000-04-25 | 2005-08-16 | J.A. Woollam Co. Inc. | Spatial filter source beam conditioning in ellipsometer and the like systems |
US6049220A (en) * | 1998-06-10 | 2000-04-11 | Boxer Cross Incorporated | Apparatus and method for evaluating a wafer of semiconductor material |
US7177019B2 (en) * | 1999-02-01 | 2007-02-13 | Tokyo Electron Limited | Apparatus for imaging metrology |
US7042580B1 (en) * | 1999-02-01 | 2006-05-09 | Tokyo Electron Limited | Apparatus for imaging metrology |
US6804003B1 (en) | 1999-02-09 | 2004-10-12 | Kla-Tencor Corporation | System for analyzing surface characteristics with self-calibrating capability |
US6184984B1 (en) * | 1999-02-09 | 2001-02-06 | Kla-Tencor Corporation | System for measuring polarimetric spectrum and other properties of a sample |
US6323951B1 (en) * | 1999-03-22 | 2001-11-27 | Boxer Cross Incorporated | Apparatus and method for determining the active dopant profile in a semiconductor wafer |
WO2000065331A2 (en) * | 1999-04-22 | 2000-11-02 | Kla-Tencor Corporation | System for analyzing surface characteristics with self-calibrating capability |
US7468794B1 (en) | 1999-10-18 | 2008-12-23 | J.A. Woollam Co., Inc. | Rotating compensator ellipsometer system with spatial filter equivalent |
DE19963345A1 (de) * | 1999-12-27 | 2001-07-05 | Leica Microsystems | Optische Messanordnung und Verfahren zur Neigungsmessung |
US6590655B2 (en) | 2000-04-25 | 2003-07-08 | J.A. Woollam Co. Inc. | System and method of improving electromagnetic radiation beam characteristics in ellipsometer and the like systems |
DE10021378A1 (de) * | 2000-05-02 | 2001-11-08 | Leica Microsystems | Optische Messanordnung mit einem Ellipsometer |
FR2811761B1 (fr) * | 2000-07-17 | 2002-10-11 | Production Rech S Appliquees | Ellipsometre a haute resolution spatiale fonctionnant dans l'infrarouge |
US7317531B2 (en) * | 2002-12-05 | 2008-01-08 | Kla-Tencor Technologies Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
US7541201B2 (en) | 2000-08-30 | 2009-06-02 | Kla-Tencor Technologies Corporation | Apparatus and methods for determining overlay of structures having rotational or mirror symmetry |
US6891627B1 (en) | 2000-09-20 | 2005-05-10 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension and overlay of a specimen |
US6694284B1 (en) | 2000-09-20 | 2004-02-17 | Kla-Tencor Technologies Corp. | Methods and systems for determining at least four properties of a specimen |
US6782337B2 (en) * | 2000-09-20 | 2004-08-24 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension an a presence of defects on a specimen |
US6917419B2 (en) * | 2000-09-20 | 2005-07-12 | Kla-Tencor Technologies Corp. | Methods and systems for determining flatness, a presence of defects, and a thin film characteristic of a specimen |
US6673637B2 (en) * | 2000-09-20 | 2004-01-06 | Kla-Tencor Technologies | Methods and systems for determining a presence of macro defects and overlay of a specimen |
US6812045B1 (en) | 2000-09-20 | 2004-11-02 | Kla-Tencor, Inc. | Methods and systems for determining a characteristic of a specimen prior to, during, or subsequent to ion implantation |
US6831742B1 (en) | 2000-10-23 | 2004-12-14 | Applied Materials, Inc | Monitoring substrate processing using reflected radiation |
US6911349B2 (en) * | 2001-02-16 | 2005-06-28 | Boxer Cross Inc. | Evaluating sidewall coverage in a semiconductor wafer |
US6812717B2 (en) * | 2001-03-05 | 2004-11-02 | Boxer Cross, Inc | Use of a coefficient of a power curve to evaluate a semiconductor wafer |
JP2002267418A (ja) * | 2001-03-09 | 2002-09-18 | Horiba Ltd | 膜厚測定装置 |
US6778273B2 (en) * | 2001-03-30 | 2004-08-17 | Therma-Wave, Inc. | Polarimetric scatterometer for critical dimension measurements of periodic structures |
US20030002043A1 (en) * | 2001-04-10 | 2003-01-02 | Kla-Tencor Corporation | Periodic patterns and technique to control misalignment |
JP4518789B2 (ja) * | 2001-06-08 | 2010-08-04 | ユニバーシティ・オブ・メイン | 広帯域変調および統計的推定手法を用いる分光計 |
US6597463B1 (en) | 2001-06-13 | 2003-07-22 | Advanced Micro Devices, Inc. | System to determine suitability of sion arc surface for DUV resist patterning |
US6940592B2 (en) * | 2001-10-09 | 2005-09-06 | Applied Materials, Inc. | Calibration as well as measurement on the same workpiece during fabrication |
WO2003034008A1 (en) * | 2001-10-15 | 2003-04-24 | The Regents Of The University Of California | Methods and apparatus for measuring refractive index and optical absorption differences |
US6982791B2 (en) * | 2001-12-19 | 2006-01-03 | Therma-Wave, Inc. | Scatterometry to simultaneously measure critical dimensions and film properties |
US7050162B2 (en) | 2002-01-16 | 2006-05-23 | Therma-Wave, Inc. | Optical metrology tool having improved contrast |
US7253901B2 (en) | 2002-01-23 | 2007-08-07 | Kla-Tencor Technologies Corporation | Laser-based cleaning device for film analysis tool |
US6971791B2 (en) * | 2002-03-01 | 2005-12-06 | Boxer Cross, Inc | Identifying defects in a conductive structure of a wafer, based on heat transfer therethrough |
US6958814B2 (en) | 2002-03-01 | 2005-10-25 | Applied Materials, Inc. | Apparatus and method for measuring a property of a layer in a multilayered structure |
US7671989B2 (en) * | 2002-06-24 | 2010-03-02 | J. A. Woollam Co., Inc. | Information maintenance during intensity attenuation in focused beams |
US8013996B1 (en) | 2002-06-24 | 2011-09-06 | J.A. Woollam Co., Inc. | Spatial filter in sample investigation system |
US7554662B1 (en) | 2002-06-24 | 2009-06-30 | J.A. Woollam Co., Inc. | Spatial filter means comprising an aperture with a non-unity aspect ratio in a system for investigating samples with electromagnetic radiation |
US7139081B2 (en) * | 2002-09-09 | 2006-11-21 | Zygo Corporation | Interferometry method for ellipsometry, reflectometry, and scatterometry measurements, including characterization of thin film structures |
US7869057B2 (en) | 2002-09-09 | 2011-01-11 | Zygo Corporation | Multiple-angle multiple-wavelength interferometer using high-NA imaging and spectral analysis |
US6878559B2 (en) * | 2002-09-23 | 2005-04-12 | Applied Materials, Inc. | Measurement of lateral diffusion of diffused layers |
US6963393B2 (en) * | 2002-09-23 | 2005-11-08 | Applied Materials, Inc. | Measurement of lateral diffusion of diffused layers |
US7369233B2 (en) * | 2002-11-26 | 2008-05-06 | Kla-Tencor Technologies Corporation | Optical system for measuring samples using short wavelength radiation |
US7440105B2 (en) * | 2002-12-05 | 2008-10-21 | Kla-Tencor Technologies Corporation | Continuously varying offset mark and methods of determining overlay |
US8564780B2 (en) * | 2003-01-16 | 2013-10-22 | Jordan Valley Semiconductors Ltd. | Method and system for using reflectometry below deep ultra-violet (DUV) wavelengths for measuring properties of diffracting or scattering structures on substrate work pieces |
US7126131B2 (en) * | 2003-01-16 | 2006-10-24 | Metrosol, Inc. | Broad band referencing reflectometer |
US20080246951A1 (en) * | 2007-04-09 | 2008-10-09 | Phillip Walsh | Method and system for using reflectometry below deep ultra-violet (DUV) wavelengths for measuring properties of diffracting or scattering structures on substrate work-pieces |
US7394551B2 (en) * | 2003-01-16 | 2008-07-01 | Metrosol, Inc. | Vacuum ultraviolet referencing reflectometer |
US7030978B2 (en) * | 2003-04-25 | 2006-04-18 | Applied Materials, Israel, Ltd | System and method for inspection of a substrate that has a refractive index |
US7106454B2 (en) | 2003-03-06 | 2006-09-12 | Zygo Corporation | Profiling complex surface structures using scanning interferometry |
US7324214B2 (en) | 2003-03-06 | 2008-01-29 | Zygo Corporation | Interferometer and method for measuring characteristics of optically unresolved surface features |
US7577076B2 (en) * | 2003-03-14 | 2009-08-18 | Ricoh Company, Ltd. | Tilt sensor using diffraction grating |
US8034048B2 (en) * | 2003-05-05 | 2011-10-11 | Boston Scientific Scimed, Inc. | Tissue patches and related delivery systems and methods |
US20050036143A1 (en) * | 2003-08-15 | 2005-02-17 | Nanometrics Incorporated | Reference calibration of metrology instrument |
EP1664932B1 (en) * | 2003-09-15 | 2015-01-28 | Zygo Corporation | Interferometric analysis of surfaces |
US7327457B2 (en) * | 2003-12-19 | 2008-02-05 | N&K Technology, Inc. | Apparatus and method for optical characterization of a sample over a broadband of wavelengths while minimizing polarization changes |
US7248364B2 (en) | 2003-12-19 | 2007-07-24 | N&K Technology, Inc. | Apparatus and method for optical characterization of a sample over a broadband of wavelengths with a small spot size |
CN1897870A (zh) * | 2003-12-22 | 2007-01-17 | 皇家飞利浦电子股份有限公司 | 用于进行正交偏振光谱成像(opsi)的装置和方法 |
US7190441B1 (en) | 2003-12-23 | 2007-03-13 | Kla-Tencor Technologies Corp. | Methods and systems for preparing a sample for thin film analysis |
US7078711B2 (en) * | 2004-02-13 | 2006-07-18 | Applied Materials, Inc. | Matching dose and energy of multiple ion implanters |
US7355709B1 (en) | 2004-02-23 | 2008-04-08 | Kla-Tencor Technologies Corp. | Methods and systems for optical and non-optical measurements of a substrate |
US7349079B2 (en) * | 2004-05-14 | 2008-03-25 | Kla-Tencor Technologies Corp. | Methods for measurement or analysis of a nitrogen concentration of a specimen |
US7359052B2 (en) * | 2004-05-14 | 2008-04-15 | Kla-Tencor Technologies Corp. | Systems and methods for measurement of a specimen with vacuum ultraviolet light |
US7067819B2 (en) * | 2004-05-14 | 2006-06-27 | Kla-Tencor Technologies Corp. | Systems and methods for measurement or analysis of a specimen using separated spectral peaks in light |
US7564552B2 (en) * | 2004-05-14 | 2009-07-21 | Kla-Tencor Technologies Corp. | Systems and methods for measurement of a specimen with vacuum ultraviolet light |
JP2007537455A (ja) * | 2004-05-14 | 2007-12-20 | ケイエルエイ−テンコー・テクノロジーズ・コーポレーション | 試験体の測定または分析のためのシステムおよび方法 |
IL162617A (en) * | 2004-06-17 | 2010-04-15 | Nova Measuring Instr Ltd | Reflective optical system |
US7663097B2 (en) * | 2004-08-11 | 2010-02-16 | Metrosol, Inc. | Method and apparatus for accurate calibration of a reflectometer by using a relative reflectance measurement |
US7804059B2 (en) * | 2004-08-11 | 2010-09-28 | Jordan Valley Semiconductors Ltd. | Method and apparatus for accurate calibration of VUV reflectometer |
US7282703B2 (en) * | 2004-08-11 | 2007-10-16 | Metrosol, Inc. | Method and apparatus for accurate calibration of a reflectometer by using a relative reflectance measurement |
US7511265B2 (en) * | 2004-08-11 | 2009-03-31 | Metrosol, Inc. | Method and apparatus for accurate calibration of a reflectometer by using a relative reflectance measurement |
US7399975B2 (en) * | 2004-08-11 | 2008-07-15 | Metrosol, Inc. | Method and apparatus for performing highly accurate thin film measurements |
US7489399B1 (en) * | 2004-08-20 | 2009-02-10 | Kla-Tencor Corporation | Spectroscopic multi angle ellipsometry |
US7274440B1 (en) * | 2004-09-08 | 2007-09-25 | Kla-Tencor Technologies Corp. | Systems and methods for measuring stress in a specimen |
US7379185B2 (en) * | 2004-11-01 | 2008-05-27 | Applied Materials, Inc. | Evaluation of openings in a dielectric layer |
US7298492B2 (en) * | 2004-12-29 | 2007-11-20 | Honeywell International Inc. | Method and system for on-line measurement of thickness and birefringence of thin plastic films |
US20070091325A1 (en) * | 2005-01-07 | 2007-04-26 | Mehrdad Nikoonahad | Multi-channel optical metrology |
US7428057B2 (en) | 2005-01-20 | 2008-09-23 | Zygo Corporation | Interferometer for determining characteristics of an object surface, including processing and calibration |
US7884947B2 (en) | 2005-01-20 | 2011-02-08 | Zygo Corporation | Interferometry for determining characteristics of an object surface, with spatially coherent illumination |
US7408641B1 (en) | 2005-02-14 | 2008-08-05 | Kla-Tencor Technologies Corp. | Measurement systems configured to perform measurements of a specimen and illumination subsystems configured to provide illumination for a measurement system |
US7636168B2 (en) | 2005-10-11 | 2009-12-22 | Zygo Corporation | Interferometry method and system including spectral decomposition |
US7557918B1 (en) | 2006-04-05 | 2009-07-07 | Itt Manufacturing Enterprises, Inc. | Spectral polarimetric image detection and analysis methods and apparatus |
US7522288B2 (en) | 2006-07-21 | 2009-04-21 | Zygo Corporation | Compensation of systematic effects in low coherence interferometry |
US7755775B1 (en) | 2006-10-03 | 2010-07-13 | N&K Technology, Inc. | Broadband optical metrology with reduced wave front distortion, chromatic dispersion compensation and monitoring |
US20080129986A1 (en) | 2006-11-30 | 2008-06-05 | Phillip Walsh | Method and apparatus for optically measuring periodic structures using orthogonal azimuthal sample orientations |
KR101519932B1 (ko) | 2006-12-22 | 2015-05-13 | 지고 코포레이션 | 표면 특징물의 특성을 측정하기 위한 장치 및 방법 |
US7889355B2 (en) | 2007-01-31 | 2011-02-15 | Zygo Corporation | Interferometry for lateral metrology |
US7800755B1 (en) * | 2007-07-02 | 2010-09-21 | The United States Of America As Represented By The Secretary Of The Navy | High-speed polarimeter having a multi-wavelength source |
US7619746B2 (en) | 2007-07-19 | 2009-11-17 | Zygo Corporation | Generating model signals for interferometry |
US8072611B2 (en) | 2007-10-12 | 2011-12-06 | Zygo Corporation | Interferometric analysis of under-resolved features |
US7978337B2 (en) | 2007-11-13 | 2011-07-12 | Zygo Corporation | Interferometer utilizing polarization scanning |
KR101254161B1 (ko) | 2007-12-14 | 2013-04-18 | 지고 코포레이션 | 주사 간섭계를 사용해서 표면 구조를 분석하는 방법 및 장치 |
US20090219537A1 (en) | 2008-02-28 | 2009-09-03 | Phillip Walsh | Method and apparatus for using multiple relative reflectance measurements to determine properties of a sample using vacuum ultra violet wavelengths |
US8004688B2 (en) | 2008-11-26 | 2011-08-23 | Zygo Corporation | Scan error correction in low coherence scanning interferometry |
US8030632B2 (en) * | 2009-03-30 | 2011-10-04 | Tokyo Electron Limted | Controlling angle of incidence of multiple-beam optical metrology tools |
US7961306B2 (en) * | 2009-03-30 | 2011-06-14 | Tokyo Electron Limited | Optimizing sensitivity of optical metrology measurements |
US8030631B2 (en) * | 2009-03-30 | 2011-10-04 | Tokyo Electron Limited | Apparatus for controlling angle of incidence of multiple illumination beams |
US8153987B2 (en) * | 2009-05-22 | 2012-04-10 | Jordan Valley Semiconductors Ltd. | Automated calibration methodology for VUV metrology system |
US8411146B2 (en) * | 2009-09-04 | 2013-04-02 | Lockheed Martin Corporation | Single camera color and infrared polarimetric imaging |
US8867041B2 (en) | 2011-01-18 | 2014-10-21 | Jordan Valley Semiconductor Ltd | Optical vacuum ultra-violet wavelength nanoimprint metrology |
US8565379B2 (en) | 2011-03-14 | 2013-10-22 | Jordan Valley Semiconductors Ltd. | Combining X-ray and VUV analysis of thin film layers |
US8446584B2 (en) * | 2011-05-13 | 2013-05-21 | Kla-Tencor Corporation | Reconfigurable spectroscopic ellipsometer |
US9793673B2 (en) | 2011-06-13 | 2017-10-17 | Kla-Tencor Corporation | Semiconductor inspection and metrology system using laser pulse multiplier |
US9404872B1 (en) | 2011-06-29 | 2016-08-02 | Kla-Tencor Corporation | Selectably configurable multiple mode spectroscopic ellipsometry |
KR20180028556A (ko) | 2011-07-07 | 2018-03-16 | 케이엘에이-텐코 코포레이션 | 다중-분광기 각도 스펙트로스코픽 엘립소메트리 |
US8468471B2 (en) | 2011-09-23 | 2013-06-18 | Kla-Tencor Corp. | Process aware metrology |
US9127972B2 (en) | 2011-09-28 | 2015-09-08 | The Board Of Trustees Of The University Of Illinois | Self-calibrating mass flow sensor system |
JP5808230B2 (ja) * | 2011-11-14 | 2015-11-10 | 株式会社ハーモニック・ドライブ・システムズ | 角度検出器の自律校正方法、角度検出器、円周目盛校正装置および角度検出器の校正装置 |
TWI456184B (zh) * | 2011-12-19 | 2014-10-11 | Ind Tech Res Inst | 光譜檢測裝置及光譜檢測方法 |
KR101942388B1 (ko) | 2012-02-21 | 2019-01-25 | 에이에스엠엘 네델란즈 비.브이. | 검사 장치 및 방법 |
US9279722B2 (en) | 2012-04-30 | 2016-03-08 | Agilent Technologies, Inc. | Optical emission system including dichroic beam combiner |
US9952140B2 (en) | 2012-05-29 | 2018-04-24 | Kla-Tencor Corporation | Small spot size spectroscopic ellipsometer |
US9151940B2 (en) | 2012-12-05 | 2015-10-06 | Kla-Tencor Corporation | Semiconductor inspection and metrology system using laser pulse multiplier |
CN103033341A (zh) * | 2012-12-11 | 2013-04-10 | 中国科学院长春光学精密机械与物理研究所 | 大测试角度ArF激光偏振光学薄膜元件光谱测试装置 |
JP6688732B2 (ja) * | 2013-09-16 | 2020-04-28 | ケーエルエー コーポレイション | 多入射角半導体計測システム及び方法 |
CN103759661B (zh) * | 2013-11-04 | 2016-06-29 | 北京理工大学 | 一种用于介质内测量薄膜厚度和折射率的装置 |
US9804101B2 (en) | 2014-03-20 | 2017-10-31 | Kla-Tencor Corporation | System and method for reducing the bandwidth of a laser and an inspection system and method using a laser |
US20150316468A1 (en) * | 2014-04-30 | 2015-11-05 | Nova Measuring Instruments Ltd. | Method and system for optical characterization of patterned samples |
US9525265B2 (en) | 2014-06-20 | 2016-12-20 | Kla-Tencor Corporation | Laser repetition rate multiplier and flat-top beam profile generators using mirrors and/or prisms |
JP6514769B2 (ja) * | 2014-09-15 | 2019-05-15 | ケムチュア コーポレイション | リン含有難燃剤 |
US9574992B1 (en) * | 2016-01-22 | 2017-02-21 | Kla-Tencor Corporation | Single wavelength ellipsometry with improved spot size capability |
KR101761251B1 (ko) * | 2016-03-07 | 2017-07-28 | 한양대학교 에리카산학협력단 | 분광 타원해석기 |
US10451412B2 (en) | 2016-04-22 | 2019-10-22 | Kla-Tencor Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
GB201613988D0 (en) | 2016-08-16 | 2016-09-28 | Micromass Uk Ltd And Leco Corp | Mass analyser having extended flight path |
RU2638092C1 (ru) * | 2016-08-23 | 2017-12-11 | Общество с ограниченной ответственностью "Поларлайт" | Эллипсометр |
JP6716489B2 (ja) * | 2017-04-03 | 2020-07-01 | 三菱重工業株式会社 | 核種変換反応に用いる構造体の評価方法、評価装置、それを備えた構造体の製造装置および核種変換システム |
GB2567794B (en) | 2017-05-05 | 2023-03-08 | Micromass Ltd | Multi-reflecting time-of-flight mass spectrometers |
GB2563571B (en) | 2017-05-26 | 2023-05-24 | Micromass Ltd | Time of flight mass analyser with spatial focussing |
US11817303B2 (en) | 2017-08-06 | 2023-11-14 | Micromass Uk Limited | Accelerator for multi-pass mass spectrometers |
WO2019030473A1 (en) | 2017-08-06 | 2019-02-14 | Anatoly Verenchikov | FIELDS FOR SMART REFLECTIVE TOF SM |
WO2019030475A1 (en) | 2017-08-06 | 2019-02-14 | Anatoly Verenchikov | MASS SPECTROMETER WITH MULTIPASSAGE |
WO2019030471A1 (en) | 2017-08-06 | 2019-02-14 | Anatoly Verenchikov | ION GUIDE INSIDE PULSED CONVERTERS |
US11205568B2 (en) | 2017-08-06 | 2021-12-21 | Micromass Uk Limited | Ion injection into multi-pass mass spectrometers |
US11295944B2 (en) | 2017-08-06 | 2022-04-05 | Micromass Uk Limited | Printed circuit ion mirror with compensation |
WO2019030472A1 (en) | 2017-08-06 | 2019-02-14 | Anatoly Verenchikov | IONIC MIRROR FOR MULTI-REFLECTION MASS SPECTROMETERS |
US10816649B1 (en) | 2017-09-14 | 2020-10-27 | The United States Of America As Represented By The Secretary Of The Air Force | Temporally multiplexed LADAR polarimeter |
GB201806507D0 (en) | 2018-04-20 | 2018-06-06 | Verenchikov Anatoly | Gridless ion mirrors with smooth fields |
GB201807605D0 (en) | 2018-05-10 | 2018-06-27 | Micromass Ltd | Multi-reflecting time of flight mass analyser |
GB201807626D0 (en) | 2018-05-10 | 2018-06-27 | Micromass Ltd | Multi-reflecting time of flight mass analyser |
GB201808530D0 (en) | 2018-05-24 | 2018-07-11 | Verenchikov Anatoly | TOF MS detection system with improved dynamic range |
GB201810573D0 (en) | 2018-06-28 | 2018-08-15 | Verenchikov Anatoly | Multi-pass mass spectrometer with improved duty cycle |
GB201901411D0 (en) | 2019-02-01 | 2019-03-20 | Micromass Ltd | Electrode assembly for mass spectrometer |
JP7203998B2 (ja) * | 2019-03-02 | 2023-01-13 | スペック-イメージング アー・ベー | 多色の角形の光シートを使用した濁った試料の分光光度測定のためのアセンブリ |
US11112231B2 (en) * | 2019-11-01 | 2021-09-07 | Applied Materials, Inc. | Integrated reflectometer or ellipsometer |
WO2022251159A1 (en) * | 2021-05-24 | 2022-12-01 | Arizona Board Of Regents On Behalf Of The University Of Arizona | Devices and methods for determining polarization characteristics from partial polarimetry |
Family Cites Families (60)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4053232A (en) | 1973-06-25 | 1977-10-11 | International Business Machines Corporation | Rotating-compensator ellipsometer |
US3880524A (en) | 1973-06-25 | 1975-04-29 | Ibm | Automatic ellipsometer |
US3904293A (en) | 1973-12-06 | 1975-09-09 | Sherman Gee | Optical method for surface texture measurement |
US4039370A (en) | 1975-06-23 | 1977-08-02 | Rca Corporation | Optically monitoring the undercutting of a layer being etched |
US3985447A (en) | 1975-08-29 | 1976-10-12 | Bell Telephone Laboratories, Incorporated | Measurement of thin films by polarized light |
US4200396A (en) | 1977-12-19 | 1980-04-29 | Rca Corporation | Optically testing the lateral dimensions of a pattern |
US4141780A (en) | 1977-12-19 | 1979-02-27 | Rca Corporation | Optically monitoring the thickness of a depositing layer |
US4303341A (en) | 1977-12-19 | 1981-12-01 | Rca Corporation | Optically testing the lateral dimensions of a pattern |
US4306809A (en) | 1979-03-26 | 1981-12-22 | The Board Of Regents Of The University Of Nebraska | Polarimeter |
US4330213A (en) | 1980-02-14 | 1982-05-18 | Rca Corporation | Optical line width measuring apparatus and method |
US4408884A (en) | 1981-06-29 | 1983-10-11 | Rca Corporation | Optical measurements of fine line parameters in integrated circuit processes |
US4672196A (en) | 1984-02-02 | 1987-06-09 | Canino Lawrence S | Method and apparatus for measuring properties of thin materials using polarized light |
US4710642A (en) | 1985-08-20 | 1987-12-01 | Mcneil John R | Optical scatterometer having improved sensitivity and bandwidth |
US4668860A (en) | 1985-10-09 | 1987-05-26 | Optical Coating Laboratory, Inc. | Scattermeter using polarized light to distinguish between bulk and surface scatter |
US5329357A (en) | 1986-03-06 | 1994-07-12 | Sopra-Societe De Production Et De Recherches Appliquees | Spectroscopic ellipsometry apparatus including an optical fiber |
US4893932A (en) | 1986-05-02 | 1990-01-16 | Particle Measuring Systems, Inc. | Surface analysis system and method |
FR2605100B1 (fr) | 1986-10-10 | 1988-12-09 | Labo Electronique Physique | Dispositif optique d'eclairement d'un echantillon pour un ellipsometre spectroscopique a haute resolution laterale |
US4905170A (en) | 1987-11-12 | 1990-02-27 | Forouhi Abdul R | Method and apparatus of determining optical constants of amorphous semiconductors and dielectrics |
FR2628211B1 (fr) | 1988-03-04 | 1993-05-14 | Vareille Aime | Analyseur par ellipsometrie, procede d'analyse ellipsometrique d'un echantillon et application a la mesure de variation d'epaisseur des couches minces |
US5042951A (en) | 1989-09-19 | 1991-08-27 | Therma-Wave, Inc. | High resolution ellipsometric apparatus |
US5166752A (en) | 1990-01-11 | 1992-11-24 | Rudolph Research Corporation | Simultaneous multiple angle/multiple wavelength ellipsometer and method |
US5241369A (en) | 1990-10-01 | 1993-08-31 | Mcneil John R | Two-dimensional optical scatterometer apparatus and process |
IL96483A (en) | 1990-11-27 | 1995-07-31 | Orbotech Ltd | Optical inspection method and apparatus |
US5164790A (en) | 1991-02-27 | 1992-11-17 | Mcneil John R | Simple CD measurement of periodic structures on photomasks |
US5181080A (en) | 1991-12-23 | 1993-01-19 | Therma-Wave, Inc. | Method and apparatus for evaluating the thickness of thin films |
DE4306050A1 (en) | 1992-02-29 | 1993-09-02 | Kanzaki Paper Mfg Co Ltd | Measuring double refraction to measure foil thickness - by applying phase plate to sample, measuring intensity of light momentarily passing through, etc. |
US5486701A (en) | 1992-06-16 | 1996-01-23 | Prometrix Corporation | Method and apparatus for measuring reflectance in two wavelength bands to enable determination of thin film thickness |
US5747813A (en) | 1992-06-16 | 1998-05-05 | Kla-Tencop. Corporation | Broadband microspectro-reflectometer |
US5872630A (en) | 1995-09-20 | 1999-02-16 | Johs; Blaine D. | Regression calibrated spectroscopic rotating compensator ellipsometer system with photo array detector |
DE4242232C2 (de) * | 1992-12-15 | 1998-12-10 | Burkhard Kuhls | Vorrichtung und Verfahren zur nicht-invasiven Konzentrationsbestimmung polarisierender Stoffe im menschlichen Körper |
US5416588A (en) | 1992-12-21 | 1995-05-16 | The Board Of Regents Of The University Of Nebraska | Small modulation ellipsometry |
US5381233A (en) | 1993-03-03 | 1995-01-10 | National Tsing Hua University | Polarized-light scatterometer for measuring the thickness of a film coated on the partial of a substrate |
US5412473A (en) | 1993-07-16 | 1995-05-02 | Therma-Wave, Inc. | Multiple angle spectroscopic analyzer utilizing interferometric and ellipsometric devices |
US5416594A (en) | 1993-07-20 | 1995-05-16 | Tencor Instruments | Surface scanner with thin film gauge |
US5608526A (en) | 1995-01-19 | 1997-03-04 | Tencor Instruments | Focused beam spectroscopic ellipsometry method and system |
US5607800A (en) | 1995-02-15 | 1997-03-04 | Lucent Technologies Inc. | Method and arrangement for characterizing micro-size patterns |
US6118525A (en) | 1995-03-06 | 2000-09-12 | Ade Optical Systems Corporation | Wafer inspection system for distinguishing pits and particles |
US5581350A (en) * | 1995-06-06 | 1996-12-03 | Tencor Instruments | Method and system for calibrating an ellipsometer |
FR2737572B1 (fr) | 1995-08-03 | 1997-10-24 | Centre Nat Rech Scient | Ellipsometre multi-detecteurs et procede de mesure ellipsometrique multi-detecteurs |
US5739909A (en) | 1995-10-10 | 1998-04-14 | Lucent Technologies Inc. | Measurement and control of linewidths in periodic structures using spectroscopic ellipsometry |
US5835221A (en) | 1995-10-16 | 1998-11-10 | Lucent Technologies Inc. | Process for fabricating a device using polarized light to determine film thickness |
US5877859A (en) | 1996-07-24 | 1999-03-02 | Therma-Wave, Inc. | Broadband spectroscopic rotating compensator ellipsometer |
US5923423A (en) | 1996-09-12 | 1999-07-13 | Sentec Corporation | Heterodyne scatterometer for detecting and analyzing wafer surface defects |
US5956148A (en) * | 1996-12-20 | 1999-09-21 | Texas Instruments Incorporated | Semiconductor surface measurement system and method |
EP1038165B1 (en) | 1997-03-03 | 2002-08-07 | J.A. Woollam Co. Inc. | Regression calibrated spectroscopic rotating compensator ellipsometer system with photo array detector |
US5867276A (en) | 1997-03-07 | 1999-02-02 | Bio-Rad Laboratories, Inc. | Method for broad wavelength scatterometry |
US5859424A (en) | 1997-04-08 | 1999-01-12 | Kla-Tencor Corporation | Apodizing filter system useful for reducing spot size in optical measurements and other applications |
US5798837A (en) | 1997-07-11 | 1998-08-25 | Therma-Wave, Inc. | Thin film optical measurement system and method with calibrating ellipsometer |
JP4231902B2 (ja) | 1997-07-11 | 2009-03-04 | ケイエルエイ−テンコー コーポレーション | 半導体上の多層薄膜積層を解析する装置 |
US6031615A (en) | 1997-09-22 | 2000-02-29 | Candela Instruments | System and method for simultaneously measuring lubricant thickness and degradation, thin film thickness and wear, and surface roughness |
US5963329A (en) | 1997-10-31 | 1999-10-05 | International Business Machines Corporation | Method and apparatus for measuring the profile of small repeating lines |
US6483580B1 (en) | 1998-03-06 | 2002-11-19 | Kla-Tencor Technologies Corporation | Spectroscopic scatterometer system |
US5917594A (en) * | 1998-04-08 | 1999-06-29 | Kla-Tencor Corporation | Spectroscopic measurement system using an off-axis spherical mirror and refractive elements |
US6184984B1 (en) * | 1999-02-09 | 2001-02-06 | Kla-Tencor Corporation | System for measuring polarimetric spectrum and other properties of a sample |
US8757434B2 (en) | 2010-07-01 | 2014-06-24 | The Coca-Cola Company | Merchandiser |
GB2515757A (en) | 2013-07-02 | 2015-01-07 | Ibm | Managing virtual machine policy compliance |
JP6398171B2 (ja) | 2013-10-11 | 2018-10-03 | 株式会社村田製作所 | リチウムイオン二次電池、電池パック、電動車両、電力貯蔵システム、電動工具および電子機器 |
US9639495B2 (en) | 2014-06-27 | 2017-05-02 | Advanced Micro Devices, Inc. | Integrated controller for training memory physical layer interface |
JP2016088048A (ja) | 2014-11-11 | 2016-05-23 | コニカミノルタ株式会社 | 光書込み装置および画像形成装置 |
JP2017050503A (ja) | 2015-09-04 | 2017-03-09 | 株式会社東芝 | 半導体装置とその製造方法 |
-
1999
- 1999-02-09 US US09/246,922 patent/US6184984B1/en not_active Expired - Lifetime
- 1999-04-22 US US09/298,007 patent/US6734968B1/en not_active Expired - Lifetime
-
2000
- 2000-02-09 WO PCT/US2000/003290 patent/WO2000047961A1/en active Application Filing
- 2000-02-09 JP JP2000598823A patent/JP4880122B2/ja not_active Expired - Fee Related
-
2001
- 2001-02-06 US US09/778,245 patent/US6611330B2/en not_active Expired - Lifetime
-
2011
- 2011-03-14 JP JP2011055357A patent/JP4880791B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP4880122B2 (ja) | 2012-02-22 |
JP2011141288A (ja) | 2011-07-21 |
US6184984B1 (en) | 2001-02-06 |
JP2002536657A (ja) | 2002-10-29 |
WO2000047961A9 (en) | 2001-10-25 |
WO2000047961A1 (en) | 2000-08-17 |
US6611330B2 (en) | 2003-08-26 |
US20020008874A1 (en) | 2002-01-24 |
US6734968B1 (en) | 2004-05-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4880791B2 (ja) | 試料の偏光計スペクトルおよび他の特性を測定するシステム | |
US6734967B1 (en) | Focused beam spectroscopic ellipsometry method and system | |
US5910842A (en) | Focused beam spectroscopic ellipsometry method and system | |
US5581350A (en) | Method and system for calibrating an ellipsometer | |
JP5368507B2 (ja) | 自己較正機能を備える表面特性解析用システム | |
US6804003B1 (en) | System for analyzing surface characteristics with self-calibrating capability | |
US6753961B1 (en) | Spectroscopic ellipsometer without rotating components | |
JP4140737B2 (ja) | 広帯域分光回転補償器楕円偏光計 | |
KR100917912B1 (ko) | 단일 편광자 초점 타원계측기 | |
KR100831806B1 (ko) | 박막 및 cd 측정들을 위한 빔 프로파일 복합 반사율시스템 및 방법 | |
US7206070B2 (en) | Beam profile ellipsometer with rotating compensator | |
JP2009520959A (ja) | 広帯域偏光解析器/偏光計システム | |
JPH10507833A (ja) | 分光偏光解析装置 | |
US20070258092A1 (en) | Optical measurement device and method | |
JP4774186B2 (ja) | 偏光を削減する小スポット分光測定器具 | |
EP0396409B1 (en) | High resolution ellipsometric apparatus | |
JP2005515465A (ja) | 偏光を減らした分光計及びそのための多数素子偏光解消装置 | |
JP3360822B2 (ja) | 同時多数角度/多数波長の楕円偏光器および方法 | |
US7050162B2 (en) | Optical metrology tool having improved contrast | |
US7184145B2 (en) | Achromatic spectroscopic ellipsometer with high spatial resolution | |
JP2002005823A (ja) | 薄膜測定装置 | |
US20170045397A1 (en) | Device for analysing a specimen and corresponding method | |
KR20050024343A (ko) | 고 공간해상도를 가지는 아크로메틱 분광 타원분석기 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110314 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110902 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20111108 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20111201 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4880791 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20141209 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |