JP4872051B2 - 有機薄膜太陽電池 - Google Patents
有機薄膜太陽電池 Download PDFInfo
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- JP4872051B2 JP4872051B2 JP2006077160A JP2006077160A JP4872051B2 JP 4872051 B2 JP4872051 B2 JP 4872051B2 JP 2006077160 A JP2006077160 A JP 2006077160A JP 2006077160 A JP2006077160 A JP 2006077160A JP 4872051 B2 JP4872051 B2 JP 4872051B2
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- fullerene
- layer
- photoelectric conversion
- solar cell
- conversion layer
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- 239000010409 thin film Substances 0.000 title claims description 51
- 229910003472 fullerene Inorganic materials 0.000 claims description 105
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical group C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims description 96
- 238000006243 chemical reaction Methods 0.000 claims description 87
- 239000004065 semiconductor Substances 0.000 claims description 56
- -1 fullerene compound Chemical class 0.000 claims description 13
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical group C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 claims description 11
- 238000002156 mixing Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 119
- 239000010408 film Substances 0.000 description 17
- 239000000463 material Substances 0.000 description 14
- 230000005525 hole transport Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 10
- 239000000203 mixture Substances 0.000 description 8
- 230000031700 light absorption Effects 0.000 description 7
- 239000000969 carrier Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical compound C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229920000144 PEDOT:PSS Polymers 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 238000010549 co-Evaporation Methods 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- GKWLILHTTGWKLQ-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dioxine Chemical compound O1CCOC2=CSC=C21 GKWLILHTTGWKLQ-UHFFFAOYSA-N 0.000 description 1
- 108091006149 Electron carriers Proteins 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000001782 photodegradation Methods 0.000 description 1
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000012916 structural analysis Methods 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Photovoltaic Devices (AREA)
Description
J.Xue,S.Uchida,B.P.Land,S.R.Forrest,Appl.Phys.Lett.,85, p.5757(2004)
電極4としてITO電極が150nmの膜厚で形成されたガラス基板14の上に、正孔輸送層10として、PEDOT:PSS層(poly[3,4-(ethylenedioxy) thiophene]:poly(styrene sulfonate))を30nmの膜厚で形成した。
太陽電池特性の測定結果を、図3(a)〜(d)に示す。
フラーレンの体積比が85%になるようにして光電変換層3を形成するようにした他は、実施例1と同様にして図1の層構成の有機薄膜太陽電池を作製した。この有機薄膜太陽電池はi型である。
2 n型有機半導体
3 光電変換層
4 電極
5 電極
6 フラーレン層
Claims (3)
- p型有機半導体とn型有機半導体がブレンドされた光電変換層を、少なくとも一方が光透過性である二つの電極の間に設けて形成される有機薄膜太陽電池において、p型有機半導体がオリゴチオフェン、n型有機半導体がフラーレン又はフラーレン化合物からなり、光電変換層中のフラーレン又はフラーレン化合物の合計体積比率が60%以上であり、前記オリゴチオフェンは、チオフェン環が2〜20個の範囲で連結したものであることを特徴とする有機薄膜太陽電池。
- 光電変換層中のフラーレン又はフラーレン化合物の合計体積比率が75〜95%であることを特徴とする請求項1に記載の有機薄膜太陽電池。
- 光電変換層と一方の電極との間にフラーレン又はフラーレン化合物の層を設けたことを特徴とする請求項1又は2に記載の有機薄膜太陽電池。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2006077160A JP4872051B2 (ja) | 2006-03-20 | 2006-03-20 | 有機薄膜太陽電池 |
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JP2006077160A JP4872051B2 (ja) | 2006-03-20 | 2006-03-20 | 有機薄膜太陽電池 |
Publications (2)
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JP2007258235A JP2007258235A (ja) | 2007-10-04 |
JP4872051B2 true JP4872051B2 (ja) | 2012-02-08 |
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Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101183041B1 (ko) | 2007-12-27 | 2012-09-20 | 파이오니아 가부시키가이샤 | 유기 반도체 소자, 유기 태양 전지 및 표시 패널 |
JP2010010246A (ja) * | 2008-06-25 | 2010-01-14 | Sumitomo Chemical Co Ltd | 有機光電変換素子 |
US7932124B2 (en) * | 2008-07-16 | 2011-04-26 | Konarka Technologies, Inc. | Methods of preparing photovoltaic modules |
JP5161699B2 (ja) * | 2008-08-19 | 2013-03-13 | パナソニック株式会社 | 有機発電素子の製造方法 |
KR101087903B1 (ko) | 2009-07-30 | 2011-11-30 | 한양대학교 산학협력단 | 양면 수광 유기태양전지 |
KR101564330B1 (ko) | 2009-10-15 | 2015-10-29 | 삼성전자주식회사 | 유기 나노와이어를 포함하는 태양전지 |
JP5270642B2 (ja) | 2010-03-24 | 2013-08-21 | 富士フイルム株式会社 | 光電変換素子及び撮像素子 |
JP5854401B2 (ja) * | 2012-02-17 | 2016-02-09 | 国立研究開発法人産業技術総合研究所 | 有機薄膜光電変換素子及びこれを用いた有機薄膜太陽電池 |
KR101772305B1 (ko) | 2013-03-28 | 2017-08-28 | 후지필름 가부시키가이샤 | 광전 변환 소자, 촬상 소자, 광 센서, 광전 변환 소자의 사용 방법 |
CN103904219A (zh) * | 2014-03-28 | 2014-07-02 | 电子科技大学 | 极性溶剂修饰的反型有机薄膜太阳能电池及其制备方法 |
WO2016039063A1 (ja) * | 2014-09-11 | 2016-03-17 | 東洋紡株式会社 | 光電変換素子、およびこれに用いられる有機半導体化合物 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2001516150A (ja) * | 1997-08-15 | 2001-09-25 | ユニアックス コーポレイション | 切り換え可能な感光性を有する有機ダイオード |
EP1447860A1 (en) * | 2003-02-17 | 2004-08-18 | Rijksuniversiteit Groningen | Organic material photodiode |
US8586967B2 (en) * | 2004-04-13 | 2013-11-19 | The Trustees Of Princeton University | High efficiency organic photovoltaic cells employing hybridized mixed-planar heterojunctions |
DE102005010978A1 (de) * | 2005-03-04 | 2006-09-07 | Technische Universität Dresden | Photoaktives Bauelement mit organischen Schichten |
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