JP4869472B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP4869472B2 JP4869472B2 JP2000221427A JP2000221427A JP4869472B2 JP 4869472 B2 JP4869472 B2 JP 4869472B2 JP 2000221427 A JP2000221427 A JP 2000221427A JP 2000221427 A JP2000221427 A JP 2000221427A JP 4869472 B2 JP4869472 B2 JP 4869472B2
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Images
Landscapes
- Liquid Crystal (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
- Electrodes Of Semiconductors (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000221427A JP4869472B2 (ja) | 1999-07-22 | 2000-07-21 | 半導体装置 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1999206942 | 1999-07-22 | ||
| JP20694299 | 1999-07-22 | ||
| JP11-206942 | 1999-07-22 | ||
| JP2000221427A JP4869472B2 (ja) | 1999-07-22 | 2000-07-21 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001094116A JP2001094116A (ja) | 2001-04-06 |
| JP2001094116A5 JP2001094116A5 (enrdf_load_stackoverflow) | 2009-01-08 |
| JP4869472B2 true JP4869472B2 (ja) | 2012-02-08 |
Family
ID=26515972
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000221427A Expired - Fee Related JP4869472B2 (ja) | 1999-07-22 | 2000-07-21 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4869472B2 (enrdf_load_stackoverflow) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW480576B (en) | 2000-05-12 | 2002-03-21 | Semiconductor Energy Lab | Semiconductor device and method for manufacturing same |
| JP5046452B2 (ja) | 2000-10-26 | 2012-10-10 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4954366B2 (ja) | 2000-11-28 | 2012-06-13 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4869509B2 (ja) * | 2001-07-17 | 2012-02-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7859606B2 (en) | 2004-09-15 | 2010-12-28 | Semiconductor Energy Laboratory Co. Ltd. | Semiconductor device |
| JP5352046B2 (ja) * | 2005-06-22 | 2013-11-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP6310816B2 (ja) * | 2014-08-26 | 2018-04-11 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP6824829B2 (ja) * | 2017-06-15 | 2021-02-03 | 株式会社サイオクス | 窒化物半導体積層物の製造方法、窒化物半導体自立基板の製造方法および半導体装置の製造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0955508A (ja) * | 1995-08-10 | 1997-02-25 | Sanyo Electric Co Ltd | 薄膜トランジスタ及びその製造方法 |
-
2000
- 2000-07-21 JP JP2000221427A patent/JP4869472B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2001094116A (ja) | 2001-04-06 |
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