JP2001094116A5 - - Google Patents

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Publication number
JP2001094116A5
JP2001094116A5 JP2000221427A JP2000221427A JP2001094116A5 JP 2001094116 A5 JP2001094116 A5 JP 2001094116A5 JP 2000221427 A JP2000221427 A JP 2000221427A JP 2000221427 A JP2000221427 A JP 2000221427A JP 2001094116 A5 JP2001094116 A5 JP 2001094116A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2000221427A
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Japanese (ja)
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JP2001094116A (ja
JP4869472B2 (ja
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Priority to JP2000221427A priority Critical patent/JP4869472B2/ja
Priority claimed from JP2000221427A external-priority patent/JP4869472B2/ja
Publication of JP2001094116A publication Critical patent/JP2001094116A/ja
Publication of JP2001094116A5 publication Critical patent/JP2001094116A5/ja
Application granted granted Critical
Publication of JP4869472B2 publication Critical patent/JP4869472B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2000221427A 1999-07-22 2000-07-21 半導体装置 Expired - Fee Related JP4869472B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000221427A JP4869472B2 (ja) 1999-07-22 2000-07-21 半導体装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP1999206942 1999-07-22
JP20694299 1999-07-22
JP11-206942 1999-07-22
JP2000221427A JP4869472B2 (ja) 1999-07-22 2000-07-21 半導体装置

Publications (3)

Publication Number Publication Date
JP2001094116A JP2001094116A (ja) 2001-04-06
JP2001094116A5 true JP2001094116A5 (enrdf_load_stackoverflow) 2009-01-08
JP4869472B2 JP4869472B2 (ja) 2012-02-08

Family

ID=26515972

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000221427A Expired - Fee Related JP4869472B2 (ja) 1999-07-22 2000-07-21 半導体装置

Country Status (1)

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JP (1) JP4869472B2 (enrdf_load_stackoverflow)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW480576B (en) 2000-05-12 2002-03-21 Semiconductor Energy Lab Semiconductor device and method for manufacturing same
JP5046452B2 (ja) 2000-10-26 2012-10-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4954366B2 (ja) 2000-11-28 2012-06-13 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4869509B2 (ja) * 2001-07-17 2012-02-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7859606B2 (en) 2004-09-15 2010-12-28 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device
JP5352046B2 (ja) * 2005-06-22 2013-11-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6310816B2 (ja) * 2014-08-26 2018-04-11 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP6824829B2 (ja) * 2017-06-15 2021-02-03 株式会社サイオクス 窒化物半導体積層物の製造方法、窒化物半導体自立基板の製造方法および半導体装置の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0955508A (ja) * 1995-08-10 1997-02-25 Sanyo Electric Co Ltd 薄膜トランジスタ及びその製造方法

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