JP4865240B2 - 構造体の製造方法、磁気記録媒体の製造方法、成型体の製造方法 - Google Patents

構造体の製造方法、磁気記録媒体の製造方法、成型体の製造方法 Download PDF

Info

Publication number
JP4865240B2
JP4865240B2 JP2005053447A JP2005053447A JP4865240B2 JP 4865240 B2 JP4865240 B2 JP 4865240B2 JP 2005053447 A JP2005053447 A JP 2005053447A JP 2005053447 A JP2005053447 A JP 2005053447A JP 4865240 B2 JP4865240 B2 JP 4865240B2
Authority
JP
Japan
Prior art keywords
manufacturing
film
porous layer
porous
aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005053447A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005307340A5 (enExample
JP2005307340A (ja
Inventor
彩 今田
透 田
達也 斉藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2005053447A priority Critical patent/JP4865240B2/ja
Priority to US11/086,423 priority patent/US7288203B2/en
Publication of JP2005307340A publication Critical patent/JP2005307340A/ja
Publication of JP2005307340A5 publication Critical patent/JP2005307340A5/ja
Application granted granted Critical
Publication of JP4865240B2 publication Critical patent/JP4865240B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00—Electroforming
    • C25D1/10—Moulds; Masks; Masterforms
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C23C14/5853—Oxidation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5873—Removal of material
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/04—Anodisation of aluminium or alloys based thereon
    • C25D11/045—Anodisation of aluminium or alloys based thereon for forming AAO templates
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/04—Anodisation of aluminium or alloys based thereon
    • C25D11/18—After-treatment, e.g. pore-sealing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/855—Coating only part of a support with a magnetic layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Mechanical Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
JP2005053447A 2004-03-23 2005-02-28 構造体の製造方法、磁気記録媒体の製造方法、成型体の製造方法 Expired - Fee Related JP4865240B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2005053447A JP4865240B2 (ja) 2004-03-23 2005-02-28 構造体の製造方法、磁気記録媒体の製造方法、成型体の製造方法
US11/086,423 US7288203B2 (en) 2004-03-23 2005-03-23 Process for producing structure, process for producing magnetic recording medium, and process for producing molded product

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004085014 2004-03-23
JP2004085014 2004-03-23
JP2005053447A JP4865240B2 (ja) 2004-03-23 2005-02-28 構造体の製造方法、磁気記録媒体の製造方法、成型体の製造方法

Publications (3)

Publication Number Publication Date
JP2005307340A JP2005307340A (ja) 2005-11-04
JP2005307340A5 JP2005307340A5 (enExample) 2008-04-10
JP4865240B2 true JP4865240B2 (ja) 2012-02-01

Family

ID=34988532

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005053447A Expired - Fee Related JP4865240B2 (ja) 2004-03-23 2005-02-28 構造体の製造方法、磁気記録媒体の製造方法、成型体の製造方法

Country Status (2)

Country Link
US (1) US7288203B2 (enExample)
JP (1) JP4865240B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4566667B2 (ja) * 2004-01-16 2010-10-20 キヤノン株式会社 めっき液、めっき液を用いた構造体の製造方法、めっき液を用いた装置
JP5094208B2 (ja) * 2006-08-24 2012-12-12 キヤノン株式会社 構造体の製造方法
DE102010019914A1 (de) * 2009-05-08 2010-11-18 Grohe Ag Sanitärgegenstände
EP2474650B1 (en) * 2009-09-04 2017-10-04 Sharp Kabushiki Kaisha Method for forming anodized layer, method for producing mold, method for producing antireflective film, and mold and antireflective film
JP5686429B2 (ja) * 2010-08-24 2015-03-18 株式会社船井電機新応用技術研究所 陽極酸化アルミナ−酵素複合体の製造方法
CN106702329B (zh) * 2015-11-12 2020-04-17 中国科学院金属研究所 一种钛合金表面基于多弧离子镀铝的微弧氧化陶瓷涂层及其制备方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6082694A (ja) * 1983-10-07 1985-05-10 Nippon Light Metal Co Ltd 磁気記録用アルミニウム材の製造法
JPH04319412A (ja) * 1991-04-18 1992-11-10 Furukawa Electric Co Ltd:The 電力ケーブル接続部絶縁体成形用金型
US6107213A (en) * 1996-02-01 2000-08-22 Sony Corporation Method for making thin film semiconductor
JPH11195775A (ja) * 1997-12-26 1999-07-21 Sony Corp 半導体基板および薄膜半導体素子およびそれらの製造方法ならびに陽極化成装置
JP4536866B2 (ja) * 1999-04-27 2010-09-01 キヤノン株式会社 ナノ構造体及びその製造方法
JP3729449B2 (ja) * 2001-05-11 2005-12-21 キヤノン株式会社 細孔を有する構造体及びデバイス
JP3878439B2 (ja) * 2001-06-27 2007-02-07 シャープ株式会社 多孔質層及びデバイス、並びにその製造方法
JP3598373B2 (ja) * 2001-09-03 2004-12-08 独立行政法人物質・材料研究機構 基体上に接合して規則化配列したナノ構造体およびその製造方法
JP4136730B2 (ja) * 2002-03-15 2008-08-20 キヤノン株式会社 細孔を有する構造体及びその製造方法

Also Published As

Publication number Publication date
US7288203B2 (en) 2007-10-30
JP2005307340A (ja) 2005-11-04
US20050211663A1 (en) 2005-09-29

Similar Documents

Publication Publication Date Title
JP4398873B2 (ja) 白熱光源用ナノ構造エミッターを作製するためのプロセス
JP2002285382A (ja) 陽極酸化ポーラスアルミナ及びその製造方法
JP2003129288A (ja) 細孔構造体及びその製造方法
JP4681938B2 (ja) ナノ構造体の製造方法
JP5365903B2 (ja) アルミニウム合金形成基板及びその製造方法
JP3729449B2 (ja) 細孔を有する構造体及びデバイス
JP2002332578A (ja) ナノ構造体の製造方法
JP4865240B2 (ja) 構造体の製造方法、磁気記録媒体の製造方法、成型体の製造方法
US6986838B2 (en) Nanomachined and micromachined electrodes for electrochemical devices
JP4681939B2 (ja) ナノ構造体の製造方法
JP4423077B2 (ja) 陽極酸化ポーラスアルミナおよびその製造方法
JP4136723B2 (ja) 構造体及び構造体の製造方法
EP2630078B1 (en) Nano-scale structures
US9447513B2 (en) Nano-scale structures
JP4603834B2 (ja) 構造体、その製造方法及び多孔質体
JP4641442B2 (ja) 多孔質体の製造方法
US8961799B2 (en) Nano-structured surface
JP4230861B2 (ja) ホールアレーの製造方法
JP4560356B2 (ja) 多孔質体および構造体の製造方法
JP2004238712A (ja) 構造体、スタンパ、磁気記録媒体及びそれらの製造方法
JPH06117845A (ja) Ｓｐｍ用探針評価用標準試料及びその製造方法
JP2005272990A (ja) 突起を有する構造体の製造方法
JP2007083356A (ja) 構造体およびインプリント用原盤の製造方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080226

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080226

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20100201

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100630

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20100630

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100817

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101015

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110823

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111017

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20111108

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20111110

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20141118

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20141118

Year of fee payment: 3

LAPS Cancellation because of no payment of annual fees