JP4858019B2 - シリコン単結晶の製造方法 - Google Patents
シリコン単結晶の製造方法 Download PDFInfo
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- JP4858019B2 JP4858019B2 JP2006240458A JP2006240458A JP4858019B2 JP 4858019 B2 JP4858019 B2 JP 4858019B2 JP 2006240458 A JP2006240458 A JP 2006240458A JP 2006240458 A JP2006240458 A JP 2006240458A JP 4858019 B2 JP4858019 B2 JP 4858019B2
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- melt
- crystal
- seed crystal
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
(1)CZ法により、坩堝内の結晶原料を融解させ、種結晶を坩堝内に保持される溶融液に浸漬させた後、種結晶を引上げてネック部を形成するネック工程に次いで、単結晶のショルダー部およびボディー部を形成する単結晶製造方法において、前記種結晶を前記溶融液に浸漬させる際に、溶融液温度を種結晶が溶融液表面に接触するのに最適な温度とした後、前記溶融液温度を低下させるとともに、前記種結晶の引上げ速度を速めながら引上げ、引上げ径が目標のネック径に到達した時点で引上げ速度を一定の速度としてネック部を形成することを特徴とするシリコン単結晶の製造方法である。
(2)上記(1)のシリコン単結晶の製造方法は、前記種結晶の少なくとも溶融液表面と接触する結晶下端部の直径が8mm以下であり、形成されるネック部の直径が4〜6mmであるのが望ましい。さらに、結晶方位が<110>である前記種結晶を用い、結晶方位<110>のシリコン単結晶を引上げるのに最適な方法である。
3:メニスカス、 4:ネック部
4a:絞り部、 5:ショルダー部
Claims (3)
- チョクラルスキー法により、坩堝内の結晶原料を融解させ、種結晶を坩堝内に保持される溶融液に浸漬させた後、種結晶を引上げてネック部を形成するネック工程に次いで、単結晶のショルダー部およびボディー部を形成する単結晶製造方法において、
前記種結晶を前記溶融液に浸漬させる際に、溶融液温度を種結晶が溶融液表面に接触するのに最適な温度とした後、前記溶融液温度を4〜5℃の範囲で低下させるとともに、前記種結晶の引上げ速度を0mm/minから5mm/minに徐々に速めながら引上げ、引上げ径が目標のネック径に到達した時点で引上げ速度を一定の速度としてネック部を形成することを特徴とするシリコン単結晶の製造方法。 - 前記溶融液表面と接触する前記種結晶の下端部の直径が8mm以下であり、形成されるネック部の直径が4〜6mmであることを特徴とする請求項1に記載のシリコン単結晶の製造方法。
- 結晶方位が<110>である前記種結晶を用い、結晶方位<110>のシリコン単結晶を引上げることを特徴とする請求項1または2に記載のシリコン単結晶の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006240458A JP4858019B2 (ja) | 2006-09-05 | 2006-09-05 | シリコン単結晶の製造方法 |
US11/896,564 US20080053370A1 (en) | 2006-09-05 | 2007-09-04 | Method for producing silicon single crystal |
Applications Claiming Priority (1)
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---|---|---|---|
JP2006240458A JP4858019B2 (ja) | 2006-09-05 | 2006-09-05 | シリコン単結晶の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008063165A JP2008063165A (ja) | 2008-03-21 |
JP4858019B2 true JP4858019B2 (ja) | 2012-01-18 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006240458A Active JP4858019B2 (ja) | 2006-09-05 | 2006-09-05 | シリコン単結晶の製造方法 |
Country Status (2)
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US (1) | US20080053370A1 (ja) |
JP (1) | JP4858019B2 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009263142A (ja) * | 2008-04-21 | 2009-11-12 | Sumco Corp | シリコン単結晶の育成方法 |
JP5182234B2 (ja) * | 2009-06-22 | 2013-04-17 | 株式会社Sumco | シリコン単結晶の製造方法 |
US20100319612A1 (en) * | 2009-06-22 | 2010-12-23 | Sumco Corporation | Method of producing silicon single crystal |
JP5819185B2 (ja) * | 2011-12-29 | 2015-11-18 | グローバルウェーハズ・ジャパン株式会社 | シリコン単結晶の製造方法 |
US20150044467A1 (en) * | 2012-04-23 | 2015-02-12 | Hwajin Jo | Method of growing ingot and ingot |
WO2013172227A1 (ja) * | 2012-05-16 | 2013-11-21 | 並木精密宝石株式会社 | 酸化ガリウム単結晶、及び、酸化ガリウム単結晶基板 |
CN113337883B (zh) * | 2021-06-09 | 2022-09-09 | 深圳市凯乐新联文化科技有限公司 | 一种陶瓷生产工艺 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09118585A (ja) * | 1995-10-26 | 1997-05-06 | Kokusai Electric Co Ltd | 単結晶引上装置および単結晶の引上方法 |
JP2716023B2 (ja) * | 1995-11-22 | 1998-02-18 | 日本電気株式会社 | シリコン単結晶育成装置 |
US5935321A (en) * | 1997-08-01 | 1999-08-10 | Motorola, Inc. | Single crystal ingot and method for growing the same |
WO2003016598A1 (en) * | 2001-08-15 | 2003-02-27 | Memc Electronic Materials, Inc. | Controlled crown growth process for czochralski single crystal silicon |
JP4091762B2 (ja) * | 2001-12-07 | 2008-05-28 | Dowaホールディングス株式会社 | 単結晶製造方法 |
-
2006
- 2006-09-05 JP JP2006240458A patent/JP4858019B2/ja active Active
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2007
- 2007-09-04 US US11/896,564 patent/US20080053370A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
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JP2008063165A (ja) | 2008-03-21 |
US20080053370A1 (en) | 2008-03-06 |
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