JP4857517B2 - アニールウエーハ及びアニールウエーハの製造方法 - Google Patents

アニールウエーハ及びアニールウエーハの製造方法 Download PDF

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Publication number
JP4857517B2
JP4857517B2 JP2003395986A JP2003395986A JP4857517B2 JP 4857517 B2 JP4857517 B2 JP 4857517B2 JP 2003395986 A JP2003395986 A JP 2003395986A JP 2003395986 A JP2003395986 A JP 2003395986A JP 4857517 B2 JP4857517 B2 JP 4857517B2
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Japan
Prior art keywords
wafer
temperature
silicon
grown
region
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Expired - Fee Related
Application number
JP2003395986A
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English (en)
Japanese (ja)
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JP2005159028A (ja
Inventor
亮二 星
博 竹野
泉 布施川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
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Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to JP2003395986A priority Critical patent/JP4857517B2/ja
Priority to PCT/JP2004/016394 priority patent/WO2005053010A1/fr
Publication of JP2005159028A publication Critical patent/JP2005159028A/ja
Application granted granted Critical
Publication of JP4857517B2 publication Critical patent/JP4857517B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2003395986A 2003-11-26 2003-11-26 アニールウエーハ及びアニールウエーハの製造方法 Expired - Fee Related JP4857517B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2003395986A JP4857517B2 (ja) 2003-11-26 2003-11-26 アニールウエーハ及びアニールウエーハの製造方法
PCT/JP2004/016394 WO2005053010A1 (fr) 2003-11-26 2004-11-05 Plaquette recuite et methode de fabrication de cette plaquette recuite

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003395986A JP4857517B2 (ja) 2003-11-26 2003-11-26 アニールウエーハ及びアニールウエーハの製造方法

Publications (2)

Publication Number Publication Date
JP2005159028A JP2005159028A (ja) 2005-06-16
JP4857517B2 true JP4857517B2 (ja) 2012-01-18

Family

ID=34631499

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003395986A Expired - Fee Related JP4857517B2 (ja) 2003-11-26 2003-11-26 アニールウエーハ及びアニールウエーハの製造方法

Country Status (2)

Country Link
JP (1) JP4857517B2 (fr)
WO (1) WO2005053010A1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4853027B2 (ja) * 2006-01-17 2012-01-11 信越半導体株式会社 シリコン単結晶ウエーハの製造方法
JP4380689B2 (ja) 2006-11-21 2009-12-09 信越半導体株式会社 縦型熱処理用ボートおよびそれを用いた半導体ウエーハの熱処理方法
JP5119677B2 (ja) * 2007-02-16 2013-01-16 株式会社Ｓｕｍｃｏ シリコンウェーハ及びその製造方法
JP5061663B2 (ja) 2007-03-12 2012-10-31 信越半導体株式会社 縦型熱処理用ボートおよび半導体ウエーハの熱処理方法
JP5227586B2 (ja) * 2007-12-28 2013-07-03 ジルトロニック アクチエンゲゼルシャフト アニールシリコンウエハの製造方法
JP5163459B2 (ja) * 2008-12-05 2013-03-13 株式会社Ｓｕｍｃｏ シリコン単結晶の育成方法及びシリコンウェーハの検査方法
JP5537802B2 (ja) * 2008-12-26 2014-07-02 ジルトロニック アクチエンゲゼルシャフト シリコンウエハの製造方法
JP5597378B2 (ja) * 2009-03-27 2014-10-01 グローバルウェーハズ・ジャパン株式会社 シリコンウェーハの熱処理方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3085146B2 (ja) * 1995-05-31 2000-09-04 住友金属工業株式会社 シリコン単結晶ウェーハおよびその製造方法
JP3692812B2 (ja) * 1998-06-04 2005-09-07 信越半導体株式会社 窒素ドープした低欠陥シリコン単結晶ウエーハおよびその製造方法
US6632280B2 (en) * 2000-01-31 2003-10-14 Shin-Etsu Handotai Co., Ltd. Apparatus for growing single crystal, method for producing single crystal utilizing the apparatus and single crystal
JP2001278692A (ja) * 2000-03-29 2001-10-10 Shin Etsu Handotai Co Ltd シリコンウエーハおよびシリコン単結晶の製造方法
US6893499B2 (en) * 2000-06-30 2005-05-17 Shin-Etsu Handotai Co., Ltd. Silicon single crystal wafer and method for manufacturing the same
JP2002226296A (ja) * 2001-01-31 2002-08-14 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法

Also Published As

Publication number Publication date
WO2005053010A1 (fr) 2005-06-09
JP2005159028A (ja) 2005-06-16

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