JP4850616B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4850616B2
JP4850616B2 JP2006216423A JP2006216423A JP4850616B2 JP 4850616 B2 JP4850616 B2 JP 4850616B2 JP 2006216423 A JP2006216423 A JP 2006216423A JP 2006216423 A JP2006216423 A JP 2006216423A JP 4850616 B2 JP4850616 B2 JP 4850616B2
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film
region
conductive
layer
conductive layer
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Japanese (ja)
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JP2007072451A5 (enrdf_load_stackoverflow
JP2007072451A (ja
Inventor
英人 大沼
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2006216423A priority Critical patent/JP4850616B2/ja
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Publication of JP2007072451A5 publication Critical patent/JP2007072451A5/ja
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  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2006216423A 2005-08-12 2006-08-09 半導体装置の作製方法 Expired - Fee Related JP4850616B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006216423A JP4850616B2 (ja) 2005-08-12 2006-08-09 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005234906 2005-08-12
JP2005234906 2005-08-12
JP2006216423A JP4850616B2 (ja) 2005-08-12 2006-08-09 半導体装置の作製方法

Publications (3)

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JP2007072451A JP2007072451A (ja) 2007-03-22
JP2007072451A5 JP2007072451A5 (enrdf_load_stackoverflow) 2009-09-10
JP4850616B2 true JP4850616B2 (ja) 2012-01-11

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JP2006216423A Expired - Fee Related JP4850616B2 (ja) 2005-08-12 2006-08-09 半導体装置の作製方法

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JP (1) JP4850616B2 (enrdf_load_stackoverflow)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080107242A (ko) * 2006-03-06 2008-12-10 파나소닉 주식회사 포토마스크, 그 작성방법, 그 포토마스크를 이용한패턴형성방법 및 마스크데이터 작성방법
TWI422961B (zh) * 2007-07-19 2014-01-11 Hoya Corp 光罩及其製造方法、圖案轉印方法、以及顯示裝置之製造方法
JP5239591B2 (ja) * 2007-07-30 2013-07-17 大日本印刷株式会社 階調マスクおよびその製造方法
JP5292591B2 (ja) 2007-10-19 2013-09-18 株式会社ジャパンディスプレイ Tft基板の製造方法
JP2010087333A (ja) * 2008-10-01 2010-04-15 Seiko Epson Corp フォトマスク、半導体装置の製造方法、及び半導体装置
CN102375329B (zh) * 2010-08-20 2013-04-10 上海微电子装备有限公司 一种测试掩模和利用该掩模进行曝光系统参数测量的方法
JP6139826B2 (ja) * 2012-05-02 2017-05-31 Hoya株式会社 フォトマスク、パターン転写方法、及びフラットパネルディスプレイの製造方法
JP6557638B2 (ja) * 2016-07-06 2019-08-07 株式会社エスケーエレクトロニクス ハーフトーンマスクおよびハーフトーンマスクブランクス
JP2017072842A (ja) * 2016-11-09 2017-04-13 Hoya株式会社 フォトマスクの製造方法、フォトマスク、パターン転写方法、及びフラットパネルディスプレイの製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0815851A (ja) * 1994-06-24 1996-01-19 Sony Corp ハーフトーン方式位相シフトマスク及びレジスト露光方法
JP3449857B2 (ja) * 1996-06-03 2003-09-22 株式会社リコー ハーフトーン位相シフトマスクとその製造方法
JP2000181048A (ja) * 1998-12-16 2000-06-30 Sharp Corp フォトマスクおよびその製造方法、並びにそれを用いた露光方法
JP4954401B2 (ja) * 2000-08-11 2012-06-13 株式会社半導体エネルギー研究所 半導体装置の製造方法

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JP2007072451A (ja) 2007-03-22

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