JP4831873B2 - 自発光装置及びその作製方法 - Google Patents
自発光装置及びその作製方法 Download PDFInfo
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- JP4831873B2 JP4831873B2 JP2001047201A JP2001047201A JP4831873B2 JP 4831873 B2 JP4831873 B2 JP 4831873B2 JP 2001047201 A JP2001047201 A JP 2001047201A JP 2001047201 A JP2001047201 A JP 2001047201A JP 4831873 B2 JP4831873 B2 JP 4831873B2
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- Transforming Electric Information Into Light Information (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2001047201A JP4831873B2 (ja) | 2000-02-22 | 2001-02-22 | 自発光装置及びその作製方法 |
Applications Claiming Priority (4)
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JP2000045256 | 2000-02-22 | ||
JP2000-45256 | 2000-02-22 | ||
JP2000045256 | 2000-02-22 | ||
JP2001047201A JP4831873B2 (ja) | 2000-02-22 | 2001-02-22 | 自発光装置及びその作製方法 |
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JP2011101384A Division JP4987140B2 (ja) | 2000-02-22 | 2011-04-28 | 自発光装置の作製方法 |
Publications (3)
Publication Number | Publication Date |
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JP2001312223A JP2001312223A (ja) | 2001-11-09 |
JP2001312223A5 JP2001312223A5 (es) | 2008-03-27 |
JP4831873B2 true JP4831873B2 (ja) | 2011-12-07 |
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Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW525305B (en) * | 2000-02-22 | 2003-03-21 | Semiconductor Energy Lab | Self-light-emitting device and method of manufacturing the same |
US6580475B2 (en) * | 2000-04-27 | 2003-06-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
CN100485928C (zh) * | 2000-09-29 | 2009-05-06 | 三洋电机株式会社 | 半导体器件以及显示装置 |
JP5303818B2 (ja) * | 2001-09-18 | 2013-10-02 | パナソニック株式会社 | 有機エレクトロルミネセンスディスプレイパネルおよびその製造方法 |
KR100940342B1 (ko) * | 2001-11-13 | 2010-02-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 및 그 구동방법 |
US7098069B2 (en) | 2002-01-24 | 2006-08-29 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device, method of preparing the same and device for fabricating the same |
KR100462861B1 (ko) * | 2002-04-15 | 2004-12-17 | 삼성에스디아이 주식회사 | 블랙매트릭스를 구비한 평판표시장치 및 그의 제조방법 |
TWI269248B (en) | 2002-05-13 | 2006-12-21 | Semiconductor Energy Lab | Display device |
KR100850879B1 (ko) * | 2002-05-15 | 2008-08-07 | 엘지이노텍 주식회사 | 저온 소성 세라믹을 이용한 안테나 스위치 |
TWI288443B (en) | 2002-05-17 | 2007-10-11 | Semiconductor Energy Lab | SiN film, semiconductor device, and the manufacturing method thereof |
JP4817627B2 (ja) * | 2003-08-29 | 2011-11-16 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
US7291967B2 (en) | 2003-08-29 | 2007-11-06 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element including a barrier layer and a manufacturing method thereof |
CN1875663B (zh) | 2003-08-29 | 2011-03-23 | 株式会社半导体能源研究所 | 显示设备以及制造该显示设备的方法 |
KR100552975B1 (ko) | 2003-11-22 | 2006-02-15 | 삼성에스디아이 주식회사 | 능동 매트릭스 유기전계발광표시장치 및 그의 제조방법 |
JP4704004B2 (ja) * | 2003-10-20 | 2011-06-15 | 株式会社半導体エネルギー研究所 | 発光装置及び電子機器 |
US7205716B2 (en) | 2003-10-20 | 2007-04-17 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
US7902747B2 (en) * | 2003-10-21 | 2011-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device having a thin insulating film made of nitrogen and silicon and an electrode made of conductive transparent oxide and silicon dioxide |
JP4656906B2 (ja) * | 2003-10-21 | 2011-03-23 | 株式会社半導体エネルギー研究所 | 発光装置 |
KR100611147B1 (ko) * | 2003-11-25 | 2006-08-09 | 삼성에스디아이 주식회사 | 유기전계발광표시장치 |
KR100741962B1 (ko) | 2003-11-26 | 2007-07-23 | 삼성에스디아이 주식회사 | 평판표시장치 |
US7619258B2 (en) * | 2004-03-16 | 2009-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
JP2005340802A (ja) * | 2004-04-28 | 2005-12-08 | Semiconductor Energy Lab Co Ltd | 半導体装置及び表示装置の作製方法 |
US8350466B2 (en) | 2004-09-17 | 2013-01-08 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
KR100590253B1 (ko) | 2004-11-10 | 2006-06-19 | 삼성에스디아이 주식회사 | 유기 전계 발광 소자 및 그 제조 방법 |
GB2438772B (en) * | 2005-03-02 | 2011-01-19 | Konica Minolta Holdings Inc | Organic electroluminescence element, display device and lighting device |
JP4706401B2 (ja) * | 2005-03-23 | 2011-06-22 | 三菱電機株式会社 | El素子及びその製造方法 |
JP2010257694A (ja) * | 2009-04-23 | 2010-11-11 | Kyocera Corp | 画像表示装置 |
US8890187B2 (en) * | 2010-04-16 | 2014-11-18 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device with an insulating partition |
KR101643011B1 (ko) * | 2010-05-07 | 2016-07-27 | 가부시키가이샤 제이올레드 | 유기 el 표시 패널 및 그 제조 방법 |
JP6104099B2 (ja) | 2013-08-21 | 2017-03-29 | 株式会社ジャパンディスプレイ | 有機el表示装置 |
KR102175405B1 (ko) * | 2014-02-28 | 2020-11-06 | 엘지디스플레이 주식회사 | 쉬프트 레지스터 |
JP6560530B2 (ja) | 2015-04-30 | 2019-08-14 | 株式会社ジャパンディスプレイ | 表示装置 |
WO2019186807A1 (ja) * | 2018-03-28 | 2019-10-03 | 堺ディスプレイプロダクト株式会社 | 有機el表示装置及びその製造方法 |
WO2019186805A1 (ja) | 2018-03-28 | 2019-10-03 | 堺ディスプレイプロダクト株式会社 | 有機el表示装置及びその製造方法 |
JPWO2022167894A1 (es) * | 2021-02-05 | 2022-08-11 | ||
WO2023100014A1 (ja) * | 2021-11-30 | 2023-06-08 | 株式会社半導体エネルギー研究所 | 表示装置 |
WO2023144656A1 (ja) * | 2022-01-31 | 2023-08-03 | 株式会社半導体エネルギー研究所 | 表示装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69735023T2 (de) * | 1996-09-19 | 2006-08-17 | Seiko Epson Corp. | Verfahren zur Herstellung einer Matrixanzeigevorrichtung |
JP3457819B2 (ja) * | 1996-11-28 | 2003-10-20 | カシオ計算機株式会社 | 表示装置 |
JP3463971B2 (ja) * | 1996-12-26 | 2003-11-05 | 出光興産株式会社 | 有機アクティブel発光装置 |
JP3830238B2 (ja) * | 1997-08-29 | 2006-10-04 | セイコーエプソン株式会社 | アクティブマトリクス型装置 |
JP3429440B2 (ja) * | 1997-10-24 | 2003-07-22 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP2001160486A (ja) * | 1999-12-03 | 2001-06-12 | Sony Corp | 有機elディスプレイの製造方法及び有機elディスプレイ |
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