JP4831873B2 - 自発光装置及びその作製方法 - Google Patents

自発光装置及びその作製方法 Download PDF

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Publication number
JP4831873B2
JP4831873B2 JP2001047201A JP2001047201A JP4831873B2 JP 4831873 B2 JP4831873 B2 JP 4831873B2 JP 2001047201 A JP2001047201 A JP 2001047201A JP 2001047201 A JP2001047201 A JP 2001047201A JP 4831873 B2 JP4831873 B2 JP 4831873B2
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film
electrode
layer
insulator
gate
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JP2001312223A (ja
JP2001312223A5 (enExample
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利光 小沼
純矢 丸山
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
JP2001047201A 2000-02-22 2001-02-22 自発光装置及びその作製方法 Expired - Lifetime JP4831873B2 (ja)

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JP2001047201A JP4831873B2 (ja) 2000-02-22 2001-02-22 自発光装置及びその作製方法

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JP2000045256 2000-02-22
JP2000-45256 2000-02-22
JP2000045256 2000-02-22
JP2001047201A JP4831873B2 (ja) 2000-02-22 2001-02-22 自発光装置及びその作製方法

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JP2011101384A Division JP4987140B2 (ja) 2000-02-22 2011-04-28 自発光装置の作製方法

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JP2001312223A JP2001312223A (ja) 2001-11-09
JP2001312223A5 JP2001312223A5 (enExample) 2008-03-27
JP4831873B2 true JP4831873B2 (ja) 2011-12-07

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Families Citing this family (38)

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TW525305B (en) * 2000-02-22 2003-03-21 Semiconductor Energy Lab Self-light-emitting device and method of manufacturing the same
US6580475B2 (en) * 2000-04-27 2003-06-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
CN100485928C (zh) * 2000-09-29 2009-05-06 三洋电机株式会社 半导体器件以及显示装置
TWI264244B (en) 2001-06-18 2006-10-11 Semiconductor Energy Lab Light emitting device and method of fabricating the same
JP5303818B2 (ja) * 2001-09-18 2013-10-02 パナソニック株式会社 有機エレクトロルミネセンスディスプレイパネルおよびその製造方法
KR100940342B1 (ko) 2001-11-13 2010-02-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 및 그 구동방법
US7098069B2 (en) 2002-01-24 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, method of preparing the same and device for fabricating the same
KR100462861B1 (ko) * 2002-04-15 2004-12-17 삼성에스디아이 주식회사 블랙매트릭스를 구비한 평판표시장치 및 그의 제조방법
TWI269248B (en) * 2002-05-13 2006-12-21 Semiconductor Energy Lab Display device
KR100850879B1 (ko) * 2002-05-15 2008-08-07 엘지이노텍 주식회사 저온 소성 세라믹을 이용한 안테나 스위치
TWI288443B (en) * 2002-05-17 2007-10-11 Semiconductor Energy Lab SiN film, semiconductor device, and the manufacturing method thereof
CN1875663B (zh) 2003-08-29 2011-03-23 株式会社半导体能源研究所 显示设备以及制造该显示设备的方法
US7291967B2 (en) 2003-08-29 2007-11-06 Semiconductor Energy Laboratory Co., Ltd. Light emitting element including a barrier layer and a manufacturing method thereof
JP4817627B2 (ja) * 2003-08-29 2011-11-16 株式会社半導体エネルギー研究所 表示装置の作製方法
KR100552975B1 (ko) 2003-11-22 2006-02-15 삼성에스디아이 주식회사 능동 매트릭스 유기전계발광표시장치 및 그의 제조방법
US7205716B2 (en) 2003-10-20 2007-04-17 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
JP4704004B2 (ja) * 2003-10-20 2011-06-15 株式会社半導体エネルギー研究所 発光装置及び電子機器
US7902747B2 (en) * 2003-10-21 2011-03-08 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device having a thin insulating film made of nitrogen and silicon and an electrode made of conductive transparent oxide and silicon dioxide
JP4656906B2 (ja) * 2003-10-21 2011-03-23 株式会社半導体エネルギー研究所 発光装置
KR100611147B1 (ko) 2003-11-25 2006-08-09 삼성에스디아이 주식회사 유기전계발광표시장치
KR100741962B1 (ko) * 2003-11-26 2007-07-23 삼성에스디아이 주식회사 평판표시장치
US7619258B2 (en) * 2004-03-16 2009-11-17 Semiconductor Energy Laboratory Co., Ltd. Display device
JP2005340802A (ja) * 2004-04-28 2005-12-08 Semiconductor Energy Lab Co Ltd 半導体装置及び表示装置の作製方法
US8350466B2 (en) * 2004-09-17 2013-01-08 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
KR100590253B1 (ko) 2004-11-10 2006-06-19 삼성에스디아이 주식회사 유기 전계 발광 소자 및 그 제조 방법
WO2006092943A1 (ja) * 2005-03-02 2006-09-08 Konica Minolta Holdings, Inc. 有機エレクトロルミネッセンス素子、表示装置及び照明装置
JP4706401B2 (ja) * 2005-03-23 2011-06-22 三菱電機株式会社 Ｅｌ素子及びその製造方法
JP2010257694A (ja) * 2009-04-23 2010-11-11 Kyocera Corp 画像表示装置
US8890187B2 (en) * 2010-04-16 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device with an insulating partition
CN102405539B (zh) * 2010-05-07 2015-08-12 株式会社日本有机雷特显示器 有机电致发光显示面板及其制造方法
JP6104099B2 (ja) * 2013-08-21 2017-03-29 株式会社ジャパンディスプレイ 有機ｅｌ表示装置
KR102175405B1 (ko) * 2014-02-28 2020-11-06 엘지디스플레이 주식회사 쉬프트 레지스터
JP6560530B2 (ja) 2015-04-30 2019-08-14 株式会社ジャパンディスプレイ 表示装置
JP6603826B1 (ja) * 2018-03-28 2019-11-06 堺ディスプレイプロダクト株式会社 有機ｅｌ表示装置及びその製造方法
CN118574462A (zh) * 2018-03-28 2024-08-30 堺显示器制品株式会社 El显示装置及其制造方法
JPWO2022167894A1 (enExample) * 2021-02-05 2022-08-11
JPWO2023100014A1 (enExample) * 2021-11-30 2023-06-08
WO2023144656A1 (ja) * 2022-01-31 2023-08-03 株式会社半導体エネルギー研究所 表示装置

Family Cites Families (6)

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Publication number Priority date Publication date Assignee Title
EP0862156B1 (en) * 1996-09-19 2005-04-20 Seiko Epson Corporation Method of production of a matrix type display device
JP3457819B2 (ja) * 1996-11-28 2003-10-20 カシオ計算機株式会社 表示装置
JP3463971B2 (ja) * 1996-12-26 2003-11-05 出光興産株式会社 有機アクティブｅｌ発光装置
JP3830238B2 (ja) * 1997-08-29 2006-10-04 セイコーエプソン株式会社 アクティブマトリクス型装置
JP3429440B2 (ja) * 1997-10-24 2003-07-22 シャープ株式会社 半導体装置およびその製造方法
JP2001160486A (ja) * 1999-12-03 2001-06-12 Sony Corp 有機ｅｌディスプレイの製造方法及び有機ｅｌディスプレイ

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