JP4827303B2 - 光起電力素子、ＴＦＴ、及びｉ型半導体層の形成方法 - Google Patents

光起電力素子、ＴＦＴ、及びｉ型半導体層の形成方法 Download PDF

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JP4827303B2
JP4827303B2 JP2001069355A JP2001069355A JP4827303B2 JP 4827303 B2 JP4827303 B2 JP 4827303B2 JP 2001069355 A JP2001069355 A JP 2001069355A JP 2001069355 A JP2001069355 A JP 2001069355A JP 4827303 B2 JP4827303 B2 JP 4827303B2
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semiconductor layer
type semiconductor
layer
silicon
atoms
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JP2002270871A5 (enExample
JP2002270871A (ja
Inventor
隆治 近藤
政史 佐野
享 林
明 酒井
正太郎 岡部
秀一郎 杉山
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Canon Inc
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Canon Inc
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Priority to JP2001069355A priority Critical patent/JP4827303B2/ja
Priority to US10/092,617 priority patent/US6858308B2/en
Priority to EP10162681.0A priority patent/EP2230685A3/en
Priority to EP02005536A priority patent/EP1241711A3/en
Priority to CN02121842A priority patent/CN1384552A/zh
Publication of JP2002270871A publication Critical patent/JP2002270871A/ja
Publication of JP2002270871A5 publication Critical patent/JP2002270871A5/ja
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Photovoltaic Devices (AREA)
  • Recrystallisation Techniques (AREA)
JP2001069355A 2001-03-12 2001-03-12 光起電力素子、ＴＦＴ、及びｉ型半導体層の形成方法 Expired - Fee Related JP4827303B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2001069355A JP4827303B2 (ja) 2001-03-12 2001-03-12 光起電力素子、ＴＦＴ、及びｉ型半導体層の形成方法
US10/092,617 US6858308B2 (en) 2001-03-12 2002-03-08 Semiconductor element, and method of forming silicon-based film
EP10162681.0A EP2230685A3 (en) 2001-03-12 2002-03-11 Semiconductor element, and method of forming silicon-based film
EP02005536A EP1241711A3 (en) 2001-03-12 2002-03-11 Semiconductor element, and method of forming silicon-based film
CN02121842A CN1384552A (zh) 2001-03-12 2002-03-12 半导体器件和硅基膜的形成方法

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JP2001069355A JP4827303B2 (ja) 2001-03-12 2001-03-12 光起電力素子、ＴＦＴ、及びｉ型半導体層の形成方法

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JP2011153716A Division JP2011258962A (ja) 2011-07-12 2011-07-12 光起電力素子、ＴＦＴ、及びｉ型半導体層の形成方法

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JP2002270871A5 JP2002270871A5 (enExample) 2009-12-17
JP4827303B2 true JP4827303B2 (ja) 2011-11-30

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Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07315826A (ja) * 1994-05-24 1995-12-05 Canon Inc 多結晶シリコン薄膜及びその製造方法
JP2000077694A (ja) * 1998-06-16 2000-03-14 Canon Inc 光起電力素子および太陽電池モジュ―ル

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