JP2002270871A5 - - Google Patents

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Publication number
JP2002270871A5
JP2002270871A5 JP2001069355A JP2001069355A JP2002270871A5 JP 2002270871 A5 JP2002270871 A5 JP 2002270871A5 JP 2001069355 A JP2001069355 A JP 2001069355A JP 2001069355 A JP2001069355 A JP 2001069355A JP 2002270871 A5 JP2002270871 A5 JP 2002270871A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2001069355A
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Japanese (ja)
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JP2002270871A (ja
JP4827303B2 (ja
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Publication date
Application filed filed Critical
Priority claimed from JP2001069355A external-priority patent/JP4827303B2/ja
Priority to JP2001069355A priority Critical patent/JP4827303B2/ja
Priority to US10/092,617 priority patent/US6858308B2/en
Priority to EP10162681.0A priority patent/EP2230685A3/en
Priority to EP02005536A priority patent/EP1241711A3/en
Priority to CN02121842A priority patent/CN1384552A/zh
Publication of JP2002270871A publication Critical patent/JP2002270871A/ja
Publication of JP2002270871A5 publication Critical patent/JP2002270871A5/ja
Publication of JP4827303B2 publication Critical patent/JP4827303B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2001069355A 2001-03-12 2001-03-12 光起電力素子、ＴＦＴ、及びｉ型半導体層の形成方法 Expired - Fee Related JP4827303B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2001069355A JP4827303B2 (ja) 2001-03-12 2001-03-12 光起電力素子、ＴＦＴ、及びｉ型半導体層の形成方法
US10/092,617 US6858308B2 (en) 2001-03-12 2002-03-08 Semiconductor element, and method of forming silicon-based film
EP10162681.0A EP2230685A3 (en) 2001-03-12 2002-03-11 Semiconductor element, and method of forming silicon-based film
EP02005536A EP1241711A3 (en) 2001-03-12 2002-03-11 Semiconductor element, and method of forming silicon-based film
CN02121842A CN1384552A (zh) 2001-03-12 2002-03-12 半导体器件和硅基膜的形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001069355A JP4827303B2 (ja) 2001-03-12 2001-03-12 光起電力素子、ＴＦＴ、及びｉ型半導体層の形成方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011153716A Division JP2011258962A (ja) 2011-07-12 2011-07-12 光起電力素子、ＴＦＴ、及びｉ型半導体層の形成方法

Publications (3)

Publication Number Publication Date
JP2002270871A JP2002270871A (ja) 2002-09-20
JP2002270871A5 true JP2002270871A5 (enExample) 2009-12-17
JP4827303B2 JP4827303B2 (ja) 2011-11-30

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Family Applications (1)

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JP2001069355A Expired - Fee Related JP4827303B2 (ja) 2001-03-12 2001-03-12 光起電力素子、ＴＦＴ、及びｉ型半導体層の形成方法

Country Status (1)

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JP (1) JP4827303B2 (enExample)

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US9105776B2 (en) 2006-05-15 2015-08-11 Stion Corporation Method and structure for thin film photovoltaic materials using semiconductor materials
US8017860B2 (en) 2006-05-15 2011-09-13 Stion Corporation Method and structure for thin film photovoltaic materials using bulk semiconductor materials
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US8003432B2 (en) 2008-06-25 2011-08-23 Stion Corporation Consumable adhesive layer for thin film photovoltaic material
US9087943B2 (en) 2008-06-25 2015-07-21 Stion Corporation High efficiency photovoltaic cell and manufacturing method free of metal disulfide barrier material
US8207008B1 (en) 2008-08-01 2012-06-26 Stion Corporation Affixing method and solar decal device using a thin film photovoltaic
US7855089B2 (en) 2008-09-10 2010-12-21 Stion Corporation Application specific solar cell and method for manufacture using thin film photovoltaic materials
US8008112B1 (en) 2008-09-29 2011-08-30 Stion Corporation Bulk chloride species treatment of thin film photovoltaic cell and manufacturing method
US8476104B1 (en) 2008-09-29 2013-07-02 Stion Corporation Sodium species surface treatment of thin film photovoltaic cell and manufacturing method
US8394662B1 (en) 2008-09-29 2013-03-12 Stion Corporation Chloride species surface treatment of thin film photovoltaic cell and manufacturing method
US8501521B1 (en) 2008-09-29 2013-08-06 Stion Corporation Copper species surface treatment of thin film photovoltaic cell and manufacturing method
US8008110B1 (en) 2008-09-29 2011-08-30 Stion Corporation Bulk sodium species treatment of thin film photovoltaic cell and manufacturing method
US8026122B1 (en) 2008-09-29 2011-09-27 Stion Corporation Metal species surface treatment of thin film photovoltaic cell and manufacturing method
US8236597B1 (en) 2008-09-29 2012-08-07 Stion Corporation Bulk metal species treatment of thin film photovoltaic cell and manufacturing method
US8383450B2 (en) 2008-09-30 2013-02-26 Stion Corporation Large scale chemical bath system and method for cadmium sulfide processing of thin film photovoltaic materials
US8425739B1 (en) 2008-09-30 2013-04-23 Stion Corporation In chamber sodium doping process and system for large scale cigs based thin film photovoltaic materials
US7863074B2 (en) 2008-09-30 2011-01-04 Stion Corporation Patterning electrode materials free from berm structures for thin film photovoltaic cells
US7910399B1 (en) 2008-09-30 2011-03-22 Stion Corporation Thermal management and method for large scale processing of CIS and/or CIGS based thin films overlying glass substrates
US7947524B2 (en) 2008-09-30 2011-05-24 Stion Corporation Humidity control and method for thin film photovoltaic materials
US8741689B2 (en) 2008-10-01 2014-06-03 Stion Corporation Thermal pre-treatment process for soda lime glass substrate for thin film photovoltaic materials
US20110018103A1 (en) 2008-10-02 2011-01-27 Stion Corporation System and method for transferring substrates in large scale processing of cigs and/or cis devices
US8003430B1 (en) 2008-10-06 2011-08-23 Stion Corporation Sulfide species treatment of thin film photovoltaic cell and manufacturing method
US8435826B1 (en) 2008-10-06 2013-05-07 Stion Corporation Bulk sulfide species treatment of thin film photovoltaic cell and manufacturing method
US8168463B2 (en) 2008-10-17 2012-05-01 Stion Corporation Zinc oxide film method and structure for CIGS cell
US8344243B2 (en) 2008-11-20 2013-01-01 Stion Corporation Method and structure for thin film photovoltaic cell using similar material junction
US8507786B1 (en) 2009-06-27 2013-08-13 Stion Corporation Manufacturing method for patterning CIGS/CIS solar cells
US8398772B1 (en) 2009-08-18 2013-03-19 Stion Corporation Method and structure for processing thin film PV cells with improved temperature uniformity
US8809096B1 (en) 2009-10-22 2014-08-19 Stion Corporation Bell jar extraction tool method and apparatus for thin film photovoltaic materials
US8859880B2 (en) 2010-01-22 2014-10-14 Stion Corporation Method and structure for tiling industrial thin-film solar devices
US8263494B2 (en) 2010-01-25 2012-09-11 Stion Corporation Method for improved patterning accuracy for thin film photovoltaic panels
US9096930B2 (en) 2010-03-29 2015-08-04 Stion Corporation Apparatus for manufacturing thin film photovoltaic devices
US8461061B2 (en) 2010-07-23 2013-06-11 Stion Corporation Quartz boat method and apparatus for thin film thermal treatment
US8628997B2 (en) 2010-10-01 2014-01-14 Stion Corporation Method and device for cadmium-free solar cells
US8728200B1 (en) 2011-01-14 2014-05-20 Stion Corporation Method and system for recycling processing gas for selenization of thin film photovoltaic materials
US8436445B2 (en) 2011-08-15 2013-05-07 Stion Corporation Method of manufacture of sodium doped CIGS/CIGSS absorber layers for high efficiency photovoltaic devices

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07315826A (ja) * 1994-05-24 1995-12-05 Canon Inc 多結晶シリコン薄膜及びその製造方法
JP2000077694A (ja) * 1998-06-16 2000-03-14 Canon Inc 光起電力素子および太陽電池モジュ―ル

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