JP4805569B2 - 半導体素子製造装備の洗浄方法 - Google Patents

半導体素子製造装備の洗浄方法 Download PDF

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Publication number
JP4805569B2
JP4805569B2 JP2004356844A JP2004356844A JP4805569B2 JP 4805569 B2 JP4805569 B2 JP 4805569B2 JP 2004356844 A JP2004356844 A JP 2004356844A JP 2004356844 A JP2004356844 A JP 2004356844A JP 4805569 B2 JP4805569 B2 JP 4805569B2
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JP
Japan
Prior art keywords
device manufacturing
semiconductor device
manufacturing equipment
film quality
semiconductor substrate
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Expired - Fee Related
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JP2004356844A
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English (en)
Japanese (ja)
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JP2005171386A (ja
Inventor
仁守 河
倫本 具
▲玄▼錫 林
千洙 韓
勝哲 崔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2005171386A publication Critical patent/JP2005171386A/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/905—Cleaning of reaction chamber

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2004356844A 2003-12-11 2004-12-09 半導体素子製造装備の洗浄方法 Expired - Fee Related JP4805569B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR2003-090202 2003-12-11
KR1020030090202A KR100568256B1 (ko) 2003-12-11 2003-12-11 반도체 소자 제조 장비의 세정 방법

Publications (2)

Publication Number Publication Date
JP2005171386A JP2005171386A (ja) 2005-06-30
JP4805569B2 true JP4805569B2 (ja) 2011-11-02

Family

ID=34651377

Family Applications (1)

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JP2004356844A Expired - Fee Related JP4805569B2 (ja) 2003-12-11 2004-12-09 半導体素子製造装備の洗浄方法

Country Status (4)

Country Link
US (2) US7141512B2 (ko)
JP (1) JP4805569B2 (ko)
KR (1) KR100568256B1 (ko)
DE (1) DE102004059616B4 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100568256B1 (ko) * 2003-12-11 2006-04-07 삼성전자주식회사 반도체 소자 제조 장비의 세정 방법
KR101234690B1 (ko) * 2006-07-31 2013-02-19 삼성전자주식회사 유전막을 갖는 반도체 소자 및 그 형성방법
KR101603737B1 (ko) * 2010-05-11 2016-03-16 삼성전자주식회사 기상 세정을 이용한 금속 잔류물 제거 방법, 도전막 패턴의 형성 방법, 반도체 소자의 제조 방법 및 관련 설비
US20120171797A1 (en) * 2010-12-08 2012-07-05 Applied Materials, Inc. Seasoning of deposition chamber for dopant profile control in led film stacks
CN105551954A (zh) * 2016-01-27 2016-05-04 武汉新芯集成电路制造有限公司 一种沉积氮化钛薄膜的方法
JP6600588B2 (ja) * 2016-03-17 2019-10-30 東京エレクトロン株式会社 基板搬送機構の洗浄方法及び基板処理システム

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB788353A (en) 1954-07-26 1958-01-02 Plessey Co Ltd Improvements in and relating to storage devices
IT1115156B (it) * 1979-04-06 1986-02-03 Getters Spa Leghe zr-fe per l'assorbimento di idrogeno a basse temperature
US5685963A (en) * 1994-10-31 1997-11-11 Saes Pure Gas, Inc. In situ getter pump system and method
US6699530B2 (en) * 1995-07-06 2004-03-02 Applied Materials, Inc. Method for constructing a film on a semiconductor wafer
US5610106A (en) * 1995-03-10 1997-03-11 Sony Corporation Plasma enhanced chemical vapor deposition of titanium nitride using ammonia
US6419986B1 (en) * 1997-01-10 2002-07-16 Chevron Phillips Chemical Company Ip Method for removing reactive metal from a reactor system
JP3624628B2 (ja) * 1997-05-20 2005-03-02 東京エレクトロン株式会社 成膜方法及び成膜装置
JPH1116858A (ja) * 1997-06-21 1999-01-22 Tokyo Electron Ltd 成膜装置のクリーニング方法及び処理方法
IT1297013B1 (it) * 1997-12-23 1999-08-03 Getters Spa Sistema getter per la purificazione dell'atmosfera di lavoro nei processi di deposizione fisica da vapore
TW514996B (en) * 1999-12-10 2002-12-21 Tokyo Electron Ltd Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film
US6395100B1 (en) * 2000-01-03 2002-05-28 Advanced Micro Devices, Inc. Method of improving vacuum quality in semiconductor processing chambers
JP3863391B2 (ja) * 2001-06-13 2006-12-27 Ｎｅｃエレクトロニクス株式会社 半導体装置
JP3806868B2 (ja) 2002-01-07 2006-08-09 株式会社日立製作所 Ｃｖｄ装置のクリーニング方法
JP2003221671A (ja) * 2002-01-30 2003-08-08 Tokyo Electron Ltd ガス処理方法
US6617209B1 (en) * 2002-02-22 2003-09-09 Intel Corporation Method for making a semiconductor device having a high-k gate dielectric
KR100574150B1 (ko) 2002-02-28 2006-04-25 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조방법
US20050169766A1 (en) * 2002-09-13 2005-08-04 Saes Getters S.P.A. Getter compositions reactivatable at low temperature after exposure to reactive gases at higher temperature
KR100568256B1 (ko) * 2003-12-11 2006-04-07 삼성전자주식회사 반도체 소자 제조 장비의 세정 방법

Also Published As

Publication number Publication date
US20070037407A1 (en) 2007-02-15
DE102004059616B4 (de) 2007-08-16
KR100568256B1 (ko) 2006-04-07
DE102004059616A1 (de) 2005-07-14
KR20050057967A (ko) 2005-06-16
JP2005171386A (ja) 2005-06-30
US7141512B2 (en) 2006-11-28
US20050126586A1 (en) 2005-06-16
US7538046B2 (en) 2009-05-26

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