JP4805448B2 - フォトレジストのｕｖ支援による化学的修飾 - Google Patents

フォトレジストのｕｖ支援による化学的修飾 Download PDF

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Publication number
JP4805448B2
JP4805448B2 JP2000368421A JP2000368421A JP4805448B2 JP 4805448 B2 JP4805448 B2 JP 4805448B2 JP 2000368421 A JP2000368421 A JP 2000368421A JP 2000368421 A JP2000368421 A JP 2000368421A JP 4805448 B2 JP4805448 B2 JP 4805448B2
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Japan
Prior art keywords
photoresist
compound
feature
reaction
features
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Expired - Fee Related
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JP2000368421A
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English (en)
Japanese (ja)
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JP2001176795A (ja
JP2001176795A5 (https=
Inventor
ダグラス モホンドロ ロバート
スコット ハロック ジョーン
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Axcelis Technologies Inc
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Axcelis Technologies Inc
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Publication of JP2001176795A5 publication Critical patent/JP2001176795A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2000368421A 1999-12-02 2000-12-04 フォトレジストのｕｖ支援による化学的修飾 Expired - Fee Related JP4805448B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/452878 1999-12-02
US09/452,878 US6503693B1 (en) 1999-12-02 1999-12-02 UV assisted chemical modification of photoresist

Publications (3)

Publication Number Publication Date
JP2001176795A JP2001176795A (ja) 2001-06-29
JP2001176795A5 JP2001176795A5 (https=) 2008-01-24
JP4805448B2 true JP4805448B2 (ja) 2011-11-02

Family

ID=23798317

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000368421A Expired - Fee Related JP4805448B2 (ja) 1999-12-02 2000-12-04 フォトレジストのｕｖ支援による化学的修飾

Country Status (5)

Country Link
US (1) US6503693B1 (https=)
EP (1) EP1117008A3 (https=)
JP (1) JP4805448B2 (https=)
KR (1) KR100563242B1 (https=)
TW (1) TWI261735B (https=)

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US6582891B1 (en) * 1999-12-02 2003-06-24 Axcelis Technologies, Inc. Process for reducing edge roughness in patterned photoresist
US20030008968A1 (en) 2001-07-05 2003-01-09 Yoshiki Sugeta Method for reducing pattern dimension in photoresist layer
DE10154966A1 (de) * 2001-10-31 2003-05-22 Infineon Technologies Ag Verfahren zur Herstellung einer Halbleitervorrichtung
US7060617B2 (en) * 2002-06-28 2006-06-13 Intel Corporation Method of protecting a seed layer for electroplating
US8564780B2 (en) * 2003-01-16 2013-10-22 Jordan Valley Semiconductors Ltd. Method and system for using reflectometry below deep ultra-violet (DUV) wavelengths for measuring properties of diffracting or scattering structures on substrate work pieces
US6730458B1 (en) * 2003-03-03 2004-05-04 Samsung Electronics Co., Ltd. Method for forming fine patterns through effective glass transition temperature reduction
JP4150660B2 (ja) * 2003-12-16 2008-09-17 松下電器産業株式会社 パターン形成方法
US7258965B2 (en) * 2003-12-30 2007-08-21 Intel Corporation Pre-exposure of patterned photoresist films to achieve critical dimension reduction during temperature reflow
US20050250346A1 (en) * 2004-05-06 2005-11-10 Applied Materials, Inc. Process and apparatus for post deposition treatment of low k dielectric materials
US20050279453A1 (en) * 2004-06-17 2005-12-22 Uvtech Systems, Inc. System and methods for surface cleaning
US20060096081A1 (en) * 2004-06-30 2006-05-11 Hitachi Global Storage Technologies Methods of making magnetic write heads with use of a resist channel shrinking solution having corrosion inhibitors
US7343666B2 (en) 2004-06-30 2008-03-18 Hitachi Global Storage Technologies Netherlands B.V. Methods of making magnetic write heads with use of linewidth shrinkage techniques
US7395595B2 (en) * 2005-04-19 2008-07-08 Hitachi Global Storage Technologies Netherlands B.V. Method for manufacturing P3 layer of a perpendicular magnetic write head
US20060251827A1 (en) * 2005-05-09 2006-11-09 Applied Materials, Inc. Tandem uv chamber for curing dielectric materials
US20060249175A1 (en) * 2005-05-09 2006-11-09 Applied Materials, Inc. High efficiency UV curing system
JP4530980B2 (ja) * 2005-08-26 2010-08-25 東京応化工業株式会社 膜形成用材料およびパターン形成方法
US7396482B2 (en) * 2005-10-28 2008-07-08 Infineon Technologies Ag Post exposure resist bake
US20080296258A1 (en) * 2007-02-08 2008-12-04 Elliott David J Plenum reactor system
JP5260094B2 (ja) 2007-03-12 2013-08-14 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． フェノール系ポリマー及びこれを含有するフォトレジスト
JP5448536B2 (ja) * 2009-04-08 2014-03-19 東京エレクトロン株式会社 レジスト塗布現像装置およびレジスト塗布現像方法、並びにレジスト膜処理装置およびレジスト膜処理方法
JP5193121B2 (ja) * 2009-04-17 2013-05-08 東京エレクトロン株式会社 レジスト塗布現像方法
JP5704093B2 (ja) * 2011-03-01 2015-04-22 東京エレクトロン株式会社 基板処理装置及び基板処理方法並びに記憶媒体
KR20130120586A (ko) * 2012-04-26 2013-11-05 삼성전자주식회사 패턴 형성 방법
US9875916B2 (en) * 2012-07-09 2018-01-23 Tokyo Electron Limited Method of stripping photoresist on a single substrate system
US9966280B2 (en) 2012-10-05 2018-05-08 Tokyo Electron Limited Process gas generation for cleaning of substrates
US10249509B2 (en) 2012-11-09 2019-04-02 Tokyo Electron Limited Substrate cleaning method and system using atmospheric pressure atomic oxygen
US9735026B2 (en) * 2012-11-27 2017-08-15 Tokyo Electron Limited Controlling cleaning of a layer on a substrate using nozzles
JP6145065B2 (ja) * 2014-03-19 2017-06-07 東京エレクトロン株式会社 基板処理方法、基板処理装置及び記録媒体
KR101989707B1 (ko) * 2014-07-08 2019-06-14 도쿄엘렉트론가부시키가이샤 네거티브톤 현상제 겸용 포토레지스트 조성물 및 이용 방법
US9520270B2 (en) * 2014-07-25 2016-12-13 Tokyo Eelctron Limited Direct current superposition curing for resist reflow temperature enhancement
JP6239466B2 (ja) * 2014-08-15 2017-11-29 東京エレクトロン株式会社 半導体装置の製造方法
JP7039865B2 (ja) * 2017-05-26 2022-03-23 大日本印刷株式会社 パターン形成方法、凹凸構造体の製造方法、レプリカモールドの製造方法、レジストパターン改質装置及びパターン形成システム
US20230130753A1 (en) * 2021-10-27 2023-04-27 Meta Platforms Technologies, Llc Gray-tone resists and processes

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Also Published As

Publication number Publication date
KR100563242B1 (ko) 2006-03-27
EP1117008A2 (en) 2001-07-18
KR20010062094A (ko) 2001-07-07
JP2001176795A (ja) 2001-06-29
TWI261735B (en) 2006-09-11
US6503693B1 (en) 2003-01-07
EP1117008A3 (en) 2006-03-29

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